Patents by Inventor Hideyuki Sugiyama
Hideyuki Sugiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180268888Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.Type: ApplicationFiled: September 14, 2017Publication date: September 20, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Yuichi OHSAWA, Hiroaki Yoda, Altansargai Buyandalai, Satoshi Shirotori, Mariko Shimizu, Hideyuki Sugiyama, Yushi Kato
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Publication number: 20180190336Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.Type: ApplicationFiled: February 28, 2018Publication date: July 5, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Satoshi SHIROTORI, Hiroaki YODA, Yuichi OHSAWA, Hideyuki SUGIYAMA, Mariko SHIMIZU, Altansargai BUYANDALAI, Naoharu SHIMOMURA
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Publication number: 20180159024Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, first to fourth magnetic layers, first and second intermediate layers, and a controller. The conductive layer includes first, to fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first intermediate layer is provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the fourth portion and the third magnetic layer. The second intermediate layer is provided between the third and fourth magnetic layers. The controller is electrically connected to the first and second portions. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.Type: ApplicationFiled: September 14, 2017Publication date: June 7, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Altansargai Buyandalai, Satoshi Shirotori, Yuichi Ohsawa, Hideyuki Sugiyama, Mariko Shimizu, Hiroaki Yoda, Tomoaki Inokuchi
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Patent number: 9966122Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.Type: GrantFiled: March 3, 2017Date of Patent: May 8, 2018Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Shirotori, Hiroaki Yoda, Yuichi Ohsawa, Hideyuki Sugiyama, Mariko Shimizu, Altansargai Buyandalai, Naoharu Shimomura
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Publication number: 20180090737Abstract: A sealed battery of the present invention includes a power generation element including an electrode sheet and a separator; a laminate film disposed in such a way as to enclose the power generation element therein; an electrode connection terminal connected to the electrode sheet; and an electrolyte. The laminate film is shaped to form a housing section for power generation element, the housing section being hermetically sealed at a fusion bonding section where parts of the laminate film are overlapped and fusion-bonded and at a first sealing section where the electrode connection terminal is sandwiched between and fusion-bonded with parts of the laminate film. The power generation element and the electrolyte are housed in the housing section for power generation element. The electrode connection terminal comprises an external connection section for connecting with external and a conductive section disposed between the external connection section and the first sealing section.Type: ApplicationFiled: March 30, 2015Publication date: March 29, 2018Inventors: Keisuke SAWANISHI, Hideyuki SUGIYAMA
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Publication number: 20180079756Abstract: The present invention provides a compound having an MAGL inhibitory action, which is expected to be useful as an agent for the prophylaxis or treatment of neurodegenerative diseases (e.g., Alzheimer's disease, Parkinson's disease, Huntington's disease, amyotrophic lateral sclerosis, traumatic brain injury, glaucoma, multiple sclerosis etc.), anxiety disorder, pains (e.g., inflammatory pain, cancerous pain, neurogenic pain etc.), epilepsy, depression and the like. The present invention relates a compound represented by the formula (I): wherein each symbol is as described in the specification, or a salt thereof.Type: ApplicationFiled: March 29, 2016Publication date: March 22, 2018Inventors: Shuhei IKEDA, Tatsuki KOIKE, Jumpei AIDA, Makoto FUSHIMI, Tomokazu KUSUMOTO, Hideyuki SUGIYAMA, Masako MIYAZAKI, Hidekazu TOKUHARA, Yasushi HATTORI, Makoto KAMATA
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Publication number: 20180040812Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third magnetic layer, a fourth magnetic layer, a second intermediate layer, and a controller. The metal-containing layer includes first, second, third, fourth, and fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the first magnetic layer and a portion of the third portion. The first intermediate layer includes a portion provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the third magnetic layer and a portion of the fourth portion. The second intermediate layer includes a portion provided between the third and fourth magnetic layers. The controller is electrically connected with the first portion and the second portion.Type: ApplicationFiled: March 3, 2017Publication date: February 8, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Mariko SHIMIZU, Yuichi OHSAWA, Hiroaki YODA, Hideyuki SUGIYAMA, Satoshi SHIROTORI, Altansargai BUYANDALAI
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Publication number: 20180040357Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.Type: ApplicationFiled: March 3, 2017Publication date: February 8, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Satoshi SHIROTORI, Hiroaki YODA, Yuichi OHSAWA, Hideyuki SUGIYAMA, Mariko SHIMIZU, Altansargai BUYANDALAI, Naoharu SHIMOMURA
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Patent number: 9842635Abstract: A spin transistor memory according to an embodiment includes: a first semiconductor region, a second semiconductor region, and a third semiconductor region, each being of a first conductivity type and disposed in a semiconductor layer; a first gate disposed above the semiconductor layer between the first semiconductor region and the second semiconductor region; a second gate disposed above the semiconductor layer between the second semiconductor region and the third semiconductor region; and a first ferromagnetic layer, a second ferromagnetic layer, and a third ferromagnetic layer disposed on the first semiconductor region, the second semiconductor region, and the third semiconductor region respectively.Type: GrantFiled: March 8, 2016Date of Patent: December 12, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Hideyuki Sugiyama, Mizue Ishikawa, Tomoaki Inokuchi, Yoshiaki Saito
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Publication number: 20170283406Abstract: The present invention provides a compound having an MAGL inhibitory action, and useful as an agent for the prophylaxis or treatment of neurodegenerative diseases (e.g., Alzheimer's disease, Parkinson's disease, Huntington's disease, amyotrophic lateral sclerosis, traumatic brain injury, glaucoma, multiple sclerosis etc.), anxiety disorder, pains (e.g., inflammatory pain, cancerous pain, neurogenic pain etc.), epilepsy, depression and the like. The present invention relates to a compound represented by the formula (I): wherein each symbol is as defined in the specification, or a salt thereof.Type: ApplicationFiled: March 30, 2017Publication date: October 5, 2017Applicant: Takeda Pharmaceutical Company LimitedInventors: Shuhei Ikeda, Hideyuki SUGIYAMA, Jumpei AIDA, Hidekazu TOKUHARA, Tomohiro OKAWA, Yuya OGURO, Minoru NAKAMURA, Masataka MURAKAMI
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Publication number: 20170271574Abstract: A magnetic memory according to an embodiment includes: a magnetoresistive device including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer between the first magnetic layer and the second magnetic layer; a first wiring electrically connected to the first magnetic layer; a second wiring that is electrically connected to the second magnetic layer and contains an antiferromagnetic material; a third wiring crossing the second wiring; an insulating layer between the second wiring and the third wiring; a first write circuit for applying a voltage between the second wiring and the third wiring; and a read circuit electrically connected to the first wiring and the second wiring.Type: ApplicationFiled: September 15, 2016Publication date: September 21, 2017Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tomoaki INOKUCHI, Mizue ISHIKAWA, Hideyuki SUGIYAMA, Yoshiaki SAITO
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Patent number: 9624170Abstract: The present invention aims to provide a compound having an MAGL inhibitory action, and useful as a prophylactic or therapeutic agent for neurodegenerative diseases (e.g., Alzheimer's disease, Huntington's disease, Parkinson's disease, amyotrophic lateral sclerosis, traumatic brain injury, glaucoma, multiple sclerosis and the like), anxiety disorder, pain (e.g., inflammatory pain, carcinomatous pain, nervous pain and the like), epilepsy and the like. The present invention relates to a compound represented by the formula (I): wherein each symbol is as described in the DESCRIPTION, or a salt thereof.Type: GrantFiled: December 25, 2014Date of Patent: April 18, 2017Assignee: TAKEDA PHARMACEUTICAL COMPANY LIMITEDInventors: Tatsuki Koike, Makoto Fushimi, Jumpei Aida, Shuhei Ikeda, Tomokazu Kusumoto, Hideyuki Sugiyama, Hidekazu Tokuhara
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Patent number: 9570137Abstract: A magnetic memory includes a magnetoresistive device and a load resistance unit. The magnetoresistive device has a first resistance state and a second resistance state and includes a first ferromagnetic layer and a second ferromagnetic layer. The load resistance unit is electrically connected to the magnetoresistive device. The load resistance unit is in a first state and a second state. Differential resistance of the load resistance unit at the second state is lower than differential resistance of the load resistance unit at the first state.Type: GrantFiled: March 11, 2016Date of Patent: February 14, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Hideyuki Sugiyama, Tetsufumi Tanamoto, Mizue Ishikawa, Tomoaki Inokuchi, Yoshiaki Saito
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Patent number: 9536583Abstract: A magnetic memory according to an embodiment includes: a multilayer structure including a semiconductor layer and a first ferromagnetic layer; a first wiring line electrically connected to the semiconductor layer; a second wiring line electrically connected to the first ferromagnetic layer; and a voltage applying unit electrically connected between the first wiring line and the second wiring line to apply a first voltage between the semiconductor layer and the first ferromagnetic layer during a write operation, a magnetization direction of the first ferromagnetic layer being switchable by applying the first voltage.Type: GrantFiled: November 23, 2015Date of Patent: January 3, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Tetsufumi Tanamoto, Akira Takashima, Yoshiaki Saito
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Patent number: 9520171Abstract: A resistive change memory according to an embodiment includes: a memory cell including a resistive change element comprising a first and second terminals, and a semiconductor element, the semiconductor element including a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, and a third semiconductor layer of a second conductivity type that is different from the first conductivity type, the third semiconductor layer being disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer being connected to the second terminal of the resistive change element; and a read unit configured to perform a read operation by applying a first read voltage between the first terminal and the second semiconductor layer, and then applying a second read voltage that is lower than the first read voltage between the first terminal and the second semiconductor layer.Type: GrantFiled: August 21, 2015Date of Patent: December 13, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Yoshiaki Saito, Tetsufumi Tanamoto
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Publication number: 20160318864Abstract: The present invention aims to provide a compound having an MAGL inhibitory action, and useful as a prophylactic or therapeutic agent for neurodegenerative diseases (e.g., Alzheimer's disease, Huntington's disease, Parkinson's disease, amyotrophic lateral sclerosis, traumatic brain injury, glaucoma, multiple sclerosis and the like), anxiety disorder, pain (e.g., inflammatory pain, carcinomatous pain, nervous pain and the like), epilepsy and the like. The present invention relates to a compound represented by the formula (I): wherein each symbol is as described in the DESCRIPTION, or a salt thereof.Type: ApplicationFiled: December 25, 2014Publication date: November 3, 2016Inventors: Tatsuki KOIKE, Makoto FUSHIMI, Jumpei AIDA, Shuhei IKEDA, Tomokazu KUSUMOTO, Hideyuki SUGIYAMA, Hidekazu TOKUHARA
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Publication number: 20160276007Abstract: A spin transistor memory according to an embodiment includes: a first semiconductor region, a second semiconductor region, and a third semiconductor region, each being of a first conductivity type and disposed in a semiconductor layer; a first gate disposed above the semiconductor layer between the first semiconductor region and the second semiconductor region; a second gate disposed above the semiconductor layer between the second semiconductor region and the third semiconductor region; and a first ferromagnetic layer, a second ferromagnetic layer, and a third ferromagnetic layer disposed on the first semiconductor region, the second semiconductor region, and the third semiconductor region respectively.Type: ApplicationFiled: March 8, 2016Publication date: September 22, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Hideyuki SUGIYAMA, Mizue ISHIKAWA, Tomoaki INOKUCHI, Yoshiaki SAITO
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Publication number: 20160196861Abstract: A magnetic memory includes a magnetoresistive device and a load resistance unit. The magnetoresistive device has a first resistance state and a second resistance state and includes a first ferromagnetic layer and a second ferromagnetic layer. The load resistance unit is electrically connected to the magnetoresistive device. The load resistance unit is in a first state and a second state. Differential resistance of the load resistance unit at the second state is lower than differential resistance of the load resistance unit at the first state.Type: ApplicationFiled: March 11, 2016Publication date: July 7, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Hideyuki SUGIYAMA, Tetsufumi Tanamoto, Mizue Ishikawa, Tomoaki Inokuchi, Yoshiaki Saito
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Publication number: 20160078913Abstract: A magnetic memory according to an embodiment includes: a multilayer structure including a semiconductor layer and a first ferromagnetic layer; a first wiring line electrically connected to the semiconductor layer; a second wiring line electrically connected to the first ferromagnetic layer; and a voltage applying unit electrically connected between the first wiring line and the second wiring line to apply a first voltage between the semiconductor layer and the first ferromagnetic layer during a write operation, a magnetization direction of the first ferromagnetic layer being switchable by applying the first voltage.Type: ApplicationFiled: November 23, 2015Publication date: March 17, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Tomoaki INOKUCHI, Mizue ISHIKAWA, Hideyuki SUGIYAMA, Tetsufumi TANAMOTO, Akira TAKASHIMA, Yoshiaki SAITO
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Patent number: 9230625Abstract: A magnetic memory according to an embodiment includes: a multilayer structure including a semiconductor layer and a first ferromagnetic layer; a first wiring line electrically connected to the semiconductor layer; a second wiring line electrically connected to the first ferromagnetic layer; and a voltage applying unit electrically connected between the first wiring line and the second wiring line to apply a first voltage between the semiconductor layer and the first ferromagnetic layer during a write operation, a magnetization direction of the first ferromagnetic layer being switchable by applying the first voltage.Type: GrantFiled: March 11, 2014Date of Patent: January 5, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Tetsufumi Tanamoto, Akira Takashima, Yoshiaki Saito