Patents by Inventor Hie Chul Kim

Hie Chul Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10358721
    Abstract: Provided is a semiconductor manufacturing system having an increased process window for stably and flexibly performing a deposition process. The semiconductor manufacturing system includes a gas supply device functioning as a first electrode and including a plurality of injection holes, a reactor wall connected to the gas supply device, and a substrate accommodating device functioning as a second electrode, the substrate accommodating device and the reactor wall being configured to be sealed together via face sealing. A reaction gas supplied from the gas supply device toward the substrate accommodating device is discharged to the outside through a gas discharge path between the gas supply device and the reactor wall. The first electrode includes a protruded electrode adjacent to an edge of the gas supply device.
    Type: Grant
    Filed: March 31, 2016
    Date of Patent: July 23, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Dae Youn Kim, Hie Chul Kim, Hyun Soo Jang
  • Publication number: 20190035647
    Abstract: Provided is a substrate-processing device capable of preventing a top lid from sagging downward by the own weight of the substrate-processing device and/or a vacuum suction force generated by a vacuum pump and/or thermal shock at high temperature process, in a chamber including a plurality of reactors. Also, provided is a rotating shaft for transferring a substrate between the plurality of reactors.
    Type: Application
    Filed: July 19, 2018
    Publication date: January 31, 2019
    Inventors: Ju Il Lee, Hie Chul Kim, Dae Youn Kim
  • Publication number: 20170114460
    Abstract: Provided is a semiconductor manufacturing system having an increased process window for stably and flexibly performing a deposition process. The semiconductor manufacturing system includes a gas supply device functioning as a first electrode and including a plurality of injection holes, a reactor wall connected to the gas supply device, and a substrate accommodating device functioning as a second electrode, the substrate accommodating device and the reactor wall being configured to be sealed together via face sealing. A reaction gas supplied from the gas supply device toward the substrate accommodating device is discharged to the outside through a gas discharge path between the gas supply device and the reactor wall. The first electrode includes a protruded electrode adjacent to an edge of the gas supply device.
    Type: Application
    Filed: March 31, 2016
    Publication date: April 27, 2017
    Inventors: Dae Youn Kim, Hie Chul Kim, Hyun Soo Jang
  • Patent number: D787458
    Type: Grant
    Filed: February 19, 2016
    Date of Patent: May 23, 2017
    Assignee: ASM IP Holding B.V.
    Inventors: Dae Youn Kim, Hie Chul Kim, Hyun Soo Jang