Patents by Inventor Hieu Pham
Hieu Pham has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9006026Abstract: Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack which contains at least one hard metal oxide film (e.g., metal is completely oxidized or substantially oxidized) and at least one soft metal oxide film (e.g., metal is less oxidized than hard metal oxide). The soft metal oxide film is less electrically resistive than the hard metal oxide film since the soft metal oxide film is less oxidized or more metallic than the hard metal oxide film. In one example, the hard metal oxide film is formed by an ALD process utilizing ozone as the oxidizing agent while the soft metal oxide film is formed by another ALD process utilizing water vapor as the oxidizing agent.Type: GrantFiled: August 22, 2014Date of Patent: April 14, 2015Assignees: Intermolecular, Inc., Kabushiki Kaisha Toshiba, SanDisk 3D LLCInventors: Zhendong Hong, Vidyut Gopal, Imran Hashim, Randall J. Higuchi, Tim Minvielle, Hieu Pham, Takeshi Yamaguchi
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Patent number: 8987697Abstract: Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 ? and about 100 ?, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.Type: GrantFiled: April 14, 2014Date of Patent: March 24, 2015Assignees: Intermolecular, Inc., Kabushiki Kaisha Toshiba, SanDisk 3D LLCInventors: Hieu Pham, Vidyut Gopal, Imran Hashim, Tim Minvielle, Yun Wang, Takeshi Yamaguchi, Hong Sheng Yang
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Publication number: 20140374240Abstract: A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10? cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.Type: ApplicationFiled: September 8, 2014Publication date: December 25, 2014Inventors: Hieu Pham, Vidyut Gopal, Imran Hashim, Tim Minvielle, Dipankar Pramanik, Yun Wang, Takeshi Yamaguchi, Hong Sheng Yang
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Publication number: 20140363920Abstract: Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack which contains at least one hard metal oxide film (e.g., metal is completely oxidized or substantially oxidized) and at least one soft metal oxide film (e.g., metal is less oxidized than hard metal oxide). The soft metal oxide film is less electrically resistive than the hard metal oxide film since the soft metal oxide film is less oxidized or more metallic than the hard metal oxide film. In one example, the hard metal oxide film is formed by an ALD process utilizing ozone as the oxidizing agent while the soft metal oxide film is formed by another ALD process utilizing water vapor as the oxidizing agent.Type: ApplicationFiled: August 22, 2014Publication date: December 11, 2014Inventors: Zhendong Hong, Vidyut Gopal, Imran Hashim, Randall J. Higuchi, Tim Minvielle, Hieu Pham, Takeshi Yamaguchi
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Patent number: 8906736Abstract: A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 ?cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.Type: GrantFiled: September 8, 2014Date of Patent: December 9, 2014Assignees: Intermolecular, Inc., Kabushiki Kaisha Toshiba, SanDisk 3D LLCInventors: Hieu Pham, Vidyut Gopal, Imran Hashim, Tim Minvielle, Dipankar Pramanik, Yun Wang, Takeshi Yamaguchi, Hong Sheng Yang
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Patent number: 8859328Abstract: A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 ?cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.Type: GrantFiled: April 16, 2014Date of Patent: October 14, 2014Assignees: Intermolecular, Inc., Kabushiki Kaisha Toshiba, SanDisk 3D LLCInventors: Hieu Pham, Vidyut Gopal, Imran Hashim, Tim Minvielle, Dipankar Pramanik, Yun Wang, Takeshi Yamaguchi, Hong Sheng Yang
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Patent number: 8846443Abstract: Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack which contains at least one hard metal oxide film (e.g., metal is completely oxidized or substantially oxidized) and at least one soft metal oxide film (e.g., metal is less oxidized than hard metal oxide). The soft metal oxide film is less electrically resistive than the hard metal oxide film since the soft metal oxide film is less oxidized or more metallic than the hard metal oxide film. In one example, the hard metal oxide film is formed by an ALD process utilizing ozone as the oxidizing agent while the soft metal oxide film is formed by another ALD process utilizing water vapor as the oxidizing agent.Type: GrantFiled: August 5, 2011Date of Patent: September 30, 2014Assignees: Intermolecular, Inc., Kabushiki Kaisha Toshiba, SanDisk 3D LLCInventors: Zhendong Hong, Hieu Pham, Randall Higuchi, Vidyut Gopal, Imran Hashim, Tim Minvielle, Takeshi Yamaguchi
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Publication number: 20140224645Abstract: A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 ?cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.Type: ApplicationFiled: April 16, 2014Publication date: August 14, 2014Applicants: Intermolecular Inc., Kabushiki Kaisha Toshiba, SanDisk 3D LLCInventors: Hieu Pham, Vidyut Gopal, Imran Hashim, Tim Minvielle, Dipankar Pramanik, Yun Wang, Takeshi Yamaguchi, Hong Sheng Yang
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Publication number: 20140217348Abstract: Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 ? and about 100 ?, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.Type: ApplicationFiled: April 14, 2014Publication date: August 7, 2014Applicants: Intermolecular Inc., Kabushiki Kaisha Toshiba, SanDisk 3D LLCInventors: Hieu Pham, Vidyut Gopal, Imran Hashim, Tim Minvielle, Yun Wang, Takeshi Yamaguchi, Hong Sheng Yang
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Patent number: 8779407Abstract: A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 ?cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.Type: GrantFiled: February 7, 2012Date of Patent: July 15, 2014Assignees: Intermolecular, Inc., Kabushiki Kaisha Toshiba, SanDisk 3D LLCInventors: Hieu Pham, Vidyut Gopal, Imran Hashim, Dipankar Pramanik, Yun Wang, Hong Sheng Yang
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Publication number: 20140154859Abstract: Provided are methods for processing different materials on the same substrate for high throughput screening of multiple ReRAM materials. A substrate may be divided into multiple site isolated regions, each region including one or more base structures operable as bottom electrodes of ReRAM cells. Different test samples may be formed over these base structures in a combinatorial manner. Specifically, each site isolated region may receive a test sample that has a different characteristic than at least one other sample provided in another region. The test samples may have different compositions and/or thicknesses or be deposited using different techniques. These different samples are then etched in the same operation to form portions of the samples. Each portion is substantially larger than the corresponding base structure and fully covers this base structure to protect the interface between the base structure and the portion during etching.Type: ApplicationFiled: December 5, 2012Publication date: June 5, 2014Applicant: INTERMOLECULAR INC.Inventors: Vidyut Gopal, Tony P. Chiang, Imran Hashim, Randall J. Higuchi, Robert A. Huertas, Hieu Pham, Yun Wang
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Patent number: 8735217Abstract: A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 ?cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.Type: GrantFiled: September 4, 2013Date of Patent: May 27, 2014Assignees: Intermolecular, Inc., Kabushiki Kaisha Toshiba, SanDisk 3D LLCInventors: Hieu Pham, Vidyut Gopal, Imran Hashim, Tim Minvielle, Dipankar Pramanik, Yun Wang, Takeshi Yamaguchi, Hong Sheng Yang
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Patent number: 8704203Abstract: Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 ? and about 100 ?, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.Type: GrantFiled: August 20, 2013Date of Patent: April 22, 2014Assignees: Intermolecular, Inc., Kabushiki Kaisha Toshiba, Sandisk 3D LLCInventors: Hieu Pham, Vidyut Gopal, Imran Hashim, Tim Minvielle, Yun Wang, Takeshi Yamaguchi, Hong Sheng Yang
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Patent number: 8669544Abstract: Amongst the candidates for very high efficiency solid state light sources and full solar spectrum solar cells are devices based upon InGaN nanowires. Additionally these nanowires typically require heterostructures, quantum dots, etc which all place requirements for these structures to be grown with relatively few defects and in a controllable reproducible manner. Additionally flexibility according to the device design requires that the nanowire at the substrate may be either InN or GaN. According to the invention a method of growing relatively defect free nanowires and associated structures for group IIIA-nitrides is presented without the requirement for foreign metal catalysts and overcoming the non-uniform growth of prior art non-catalyst growth techniques. According to other embodiments of the invention self-organizing dot-within-a-dot nanowire and dot-within-a-dot-within-a-well nanowire structures are presented.Type: GrantFiled: February 10, 2012Date of Patent: March 11, 2014Assignee: The Royal Institution for the Advancement of Learning/McGill UniversityInventors: Zetian Mi, Kai Cui, Hieu Pham Trung Nguyen
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Publication number: 20140038380Abstract: A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 ?cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.Type: ApplicationFiled: September 4, 2013Publication date: February 6, 2014Applicants: Kabushiki Kaisha Toshiba, Intermolecular Inc.Inventors: Hieu Pham, Vidyut Gopal, Imran Hashim, Tim Minvielle, Dipankar Pramanik, Yun Wang, Takeshi Yamaguchi, Hong Sheng Yang
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Publication number: 20130334490Abstract: Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 ? and about 100 ?, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.Type: ApplicationFiled: August 20, 2013Publication date: December 19, 2013Applicants: Intermolecular Inc., SanDisk 3D LLC, Kabushiki Kaisha ToshibaInventors: Hieu Pham, Vidyut Gopal, Imran Hashim, Tim Minvielle, Yun Wang, Takeshi Yamaguchi, Hong Sheng Yang
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Patent number: 8569104Abstract: Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 ? and about 100 ?, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.Type: GrantFiled: February 7, 2012Date of Patent: October 29, 2013Assignees: Intermolecular, Inc., Kabushiki Kaisha Toshiba, SanDisk 3D LLCInventors: Hieu Pham, Vidyut Gopal, Imran Hashim, Tim Minvielle, Yun Wang, Takeshi Yamaguchi, Hong Sheng Yang
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Publication number: 20130200324Abstract: Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 ? and about 100 ?, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.Type: ApplicationFiled: February 7, 2012Publication date: August 8, 2013Applicant: Intermolecular, Inc.Inventors: Hieu Pham, Vidyut Gopal, Imran Hashim, Yun Wang, Hong Sheng Yang
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Publication number: 20130200323Abstract: A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 ? cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.Type: ApplicationFiled: February 7, 2012Publication date: August 8, 2013Applicant: Intermolecular, Inc.Inventors: Hieu Pham, Vidyut Gopal, Imran Hashim, Dipankar Pramanik, Yun Wang, Hong Sheng Yang
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Patent number: 8415256Abstract: During semiconductor fabrication homogeneous gap-filling is achieved by depositing a thin dielectric layer into the gap, post deposition curing, and then repeating deposition and post deposition curing until gap-filling is completed. Embodiments include depositing a layer of low deposition temperature gap-fill dielectric into a high aspect ratio opening, such as a shallow trench or a gap between closely spaced apart gate electrode structures, as at a thickness of about 10 ? to about 500 ?, curing after deposition, as by UV radiation or by heating at a temperature of about 400° C. to about 1000° C., depositing another layer of low deposition temperature gap-filled dielectric, and curing after deposition. Embodiments include separately depositing and separately curing multiple layers.Type: GrantFiled: December 30, 2010Date of Patent: April 9, 2013Inventors: Alexander Nickel, Lu You, Hirokazu Tokuno, Minh Tran, Minh Van Ngo, Hieu Pham, Erik Wilson, Robert Huertas