Abstract: Methods and apparatus for etching a substrate in a plasma etch chamber are provided. In one example, the method includes exposing a substrate disposed on a substrate supporting surface of a substrate support to a plasma within a processing chamber, and applying a voltage waveform to an electrode disposed in the substrate support while the substrate is exposed to the plasma during a plurality of macro etch cycles. Each macro etch cycle includes a first macro etch period and a second macro etch period. The macro etch period includes a plurality of micro etch cycles. Each micro etch cycle has a bias power on (BPON) period and a bias power off (BPOFF) period, wherein a duration of the BPON period being less than a duration of the BPOFF period. Bias power is predominantly not applied to the electrode during the second macro etch period.

Abstract: A production method for stage 5 neurons with mature dendrites includes culturing stage 3 neurons with immature dendrites in a culture medium containing B-27 Plus.

Abstract: A recording apparatus having a support portion that supports a roll having a wound sheet, a drive portion, a conveying passage, a conveyer, and a recording portion. The drive portion rotates the supported roll in a first direction to feed the sheet from the roll, and rotates the roll in a second direction to rewind the sheet onto the roll. The conveying passage guides the sheet fed from the roll in a feeding direction and has first and second positions upstream of the conveyer in the feeding direction. The drive portion performs, before the sheet reaches the conveyer, a reciprocating operation in which the drive portion rotates the roll in the second direction in response to a leading end of the sheet reaching the first position and rotates the roll in the first direction in response to the leading end which reached the first position reaching the second position.

Abstract: A maintenance apparatus that prevents a reduction in image quality of an image recorded by a liquid discharge head is provided. A maintenance apparatus includes an application unit configured to come into contact with a discharge surface included in a recording head and apply a cleaning liquid to the discharge surface, wherein discharge ports configured to discharge a liquid are formed on the discharge surface, a suction unit configured to suction the discharge surface, a movement unit configured to move the suction unit relative to the recording head, and a control unit configured to execute a first cleaning mode where, after the application unit applies the cleaning liquid, the suction unit suctions the discharge surface.

Abstract: There is provided a production method for microglia, including a step of introducing, into pluripotent stem cells, a nucleic acid including an open reading frame of a transcription factor that increases expression of a Complement C3 (C3) gene. In the production method, the transcription factor is selected from the group consisting of SPI1, CEBPA, PTAFR, FLI1, MEF2C, EGR2, RUNX1, TNF, CEBPB, IKZF1, KLF6, NFIC, ELF4, PAX8, PRDM1, MEF2A, and NR4A3.

Abstract: A recording apparatus includes a recording portion that records an image on a sheet, a first conveyance path in which a cut sheet serving as the sheet is conveyed toward the recording unit, a second conveyance path in which a continuous sheet serving as the sheet is conveyed toward the recording portion, a common conveyance path in which the sheet is conveyed in a conveying direction from a junction point at which the first conveyance path and the second conveyance path join together to the recording portion, and a control portion that controls the conveyance of the sheet. When the sheet is not detected in the second conveyance path after a sheet conveyance abnormality is detected, while the sheet is detected in the common conveyance path, the control portion performs a discharge operation of conveying the cut sheet from the first conveyance path toward the recording portion.

Abstract: An array antenna device includes: a ground plate that is a flat-plate shaped conductor; an element antenna array in which a plurality of tapered slot antennas are linearly arranged on the ground plate along an electric field direction; and a metal plate provided at both ends or one end of an antenna aperture formed in the element antenna array arranged on the ground plate along the electric field direction, the metal plate having a height from the ground plate higher than a height of the tapered slot antenna.

Abstract: A sheet feeding apparatus includes a support portion, a guide portion, and a contact unit. The support portion rotatably supports a roll having a sheet wound to the roll. In loading the roll, the guide portion guides the roll in a guide direction from above the support portion to the support portion. The contact unit contacts an outer periphery of the roll supported by the support portion. The contact unit contacts the roll from upstream in the guide direction, and, in feeding the sheet, the sheet is fed from the roll supported by the support portion.

Abstract: A display mounting device includes a supporting pillar and a supporting pillar fixture. A display is mounted on the supporting pillar. The supporting pillar fixture is installed on a floor surface and coupled with the supporting pillar. In an extending direction of the supporting pillar, the display is detachably attached to a first end of the supporting pillar, and the supporting pillar fixture is coupled with a second end of the supporting pillar opposite to the first end in a rotatable manner. The supporting pillar fixture includes a rotation support that supports the supporting pillar in a rotatable manner. The rotation support allows for rotation of the supporting pillar within a range of angles between a first state where the extending direction of the supporting pillar is parallel to the floor surface and a second state where the extending direction of the supporting pillar is perpendicular to the floor surface.

Abstract: Waveguide slot array antennas each having slots, that transmit or receive electromagnetic waves and that are formed in a front surface of a waveguide and waveguide slot array antennas each having slots that transmit or receive electromagnetic waves and that are formed in a front surface of a waveguide, and the waveguide slot array antennas and the waveguide slot array antennas are alternately arranged, the waveguide is a ridge waveguide having a ridge formed inside the waveguide, and the waveguide is a ridge waveguide having ridges, formed inside the waveguide.

Abstract: A plasma treatment chamber comprises one or more sidewalls and a support surface within the sidewalls holds a workpiece. An array of individual gas injectors is distributed about the sidewalls. Pump ports are along the sidewalls to eject gas from the chamber. Aa etch rate uniformity of a material on the workpiece is controlled by: using the array gas injectors to inject one or more gas flows in across the workpiece; injecting a first gas flow from a first set of adjacent individual gas injectors to etch the materials on the workpiece; and simultaneously injecting a second gas flow from remaining gas injectors. The second gas flow either dilutes the first gas flow to reduce an area on the workpiece having a faster etch rate, or acts as an additional etchant to increase the etch rate in the area of the workpiece having the faster etch rate.

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching. In some embodiments, a method comprises flowing acetylene gas into a process chamber to produce a diamond like carbon deposition on a pattern mask or on at least one layer of oxide or nitride on the substrate, flowing a gas mixture of a first gas of a hydrofluorocarbon-based gas and a second gas of a fluorocarbon-based gas into the process chamber, forming a plasma from the gas mixture using an RF power source and at least one RF bias power source, performing an anisotropic etch of the at least one layer of oxide or nitride on the substrate using the pattern mask, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

Abstract: An apparatus which selectively etches a first region with respect to a second region made of a material different from that of the first region. The apparatus is controlled to perform a first step for generating, in a processing container housing a workpiece to be treated, a plasma of a treatment gas from a gas supply including a fluorocarbon gas, an oxygen-containing gas, and an inert gas, and forming a deposit including fluorocarbon on the object to be treated, and a second step for etching the first region with radicals of the fluorocarbon included in the deposit. The apparatus is also controlled to perform the first step and the second step repeatedly.

Abstract: A maintenance apparatus that prevents a reduction in image quality of an image recorded by a liquid discharge head is provided. A maintenance apparatus includes an application unit configured to come into contact with a discharge surface included in a recording head and apply a cleaning liquid to the discharge surface, wherein discharge ports configured to discharge a liquid are formed on the discharge surface, a suction unit configured to suction the discharge surface, a movement unit configured to move the suction unit relative to the recording head, and a control unit configured to execute a first cleaning mode where, after the application unit applies the cleaning liquid, the suction unit suctions the discharge surface.

Abstract: An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma processing on a target object including the first region and the second region. In the etch method, first, a plasma of a processing gas including a fluorocarbon gas is generated in a processing chamber where the target object is accommodated. Next, the plasma of the processing gas including the fluorocarbon gas is further generated in the processing chamber where the target object is accommodated. Next, the first region is etched by radicals of fluorocarbon contained in a deposit which is formed on the target object by the generation and the further generation of the plasma of the processing gas containing the fluorocarbon gas. A high frequency powers used for the plasma generation is smaller than a high frequency power used for plasma further generation.

Abstract: An etching method including: (a) providing a workpiece including a first region made of a first material and a second region made of a second material defining a recess, the first region filling the recess of the second region while covering the second region; (b) generating plasma of a first fluorocarbon gas to etch the first region until before exposing the second region; (c) generating plasma of a second fluorocarbon gas to form fluorocarbon deposits on the first region; (d) generating plasma of an inert gas to etch the first region by fluorocarbon radicals contained in the fluorocarbon deposits; and (e) repeating step (c) and step (d) one or more times until after exposing the second region. An etching rate of the first material of the first region is higher than that of the second material of the second region with respect to the second fluorocarbon gas.

Abstract: An etching method including: (a) providing a workpiece including a first region made of a first material and a second region made of a second material defining a recess, the first region filling the recess of the second region while covering the second region; (b) generating plasma of a first fluorocarbon gas to etch the first region until before exposing the second region; (c) generating plasma of a second fluorocarbon gas to form fluorocarbon deposits on the first region; (d) generating plasma of an inert gas to etch the first region by fluorocarbon radicals contained in the fluorocarbon deposits; and (e) repeating step (c) and step (d) one or more times until after exposing the second region. An etching rate of the first material of the first region is higher than that of the second material of the second region with respect to the second fluorocarbon gas.

Abstract: To reduce cost for the method for separating semiconducting carbon nanotube from a mixture of metallic and semiconducting carbon nanotubes. The separation method includes preparing a dispersion by mixing a first substance, a second substance, SDS, SC, and a mixture of metallic and semiconducting carbon nanotubes with a solvent, wherein the dispersion into two layers, which are a first layer mainly containing the first substance and a second layer mainly containing the second substance, whereby the semiconducting carbon nanotube is transferred into the first layer, and the metallic carbon nanotube is transferred into the second layer, wherein the first substance is an ?-glucan which is composed of glucose linked via ?-glucosidic linkage and which has a weight average molecular weight Mw of 4,000 to 7,000 and has a ratio in amount of ?-1, 6 linked glucose residues to the entire glucose residues of 40 to 70%.

Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching. In some embodiments, a method comprises flowing acetylene gas into a process chamber to produce a diamond like carbon deposition on a pattern mask or on at least one layer of oxide or nitride on the substrate, flowing a gas mixture of a first gas of a hydrofluorocarbon-based gas and a second gas of a fluorocarbon-based gas into the process chamber, forming a plasma from the gas mixture using an RF power source and at least one RF bias power source, performing an anisotropic etch of the at least one layer of oxide or nitride on the substrate using the pattern mask, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

Abstract: An etching method of etching a silicon nitride region with high selectivity is provided. In the etching method, a processing target object, having a silicon nitride region and a silicon-containing region having a composition different from the silicon nitride region, is accommodated in a processing vessel, and the silicon nitride region is selectively etched. In a first process, a deposit containing hydrofluorocarbon is formed on the silicon nitride region and the silicon-containing region by generating plasma of a processing gas containing a hydrofluorocarbon gas within the processing vessel. In a second process, the silicon nitride region is etched by radicals of the hydrofluorocarbon contained in the deposit. The first process and the second process are repeated alternately.