Abstract: A flash translation layer method, system, and computer program product, include sending a request with a type of feature and a flash characteristic of a translation table for a Solid-State disk, receiving, via a meta-flash translation layer (meta-FTL), the request and checking for a number of free blocks in a NAND chip, and instantiating a range in the NAND chip including the number of free blocks using the meta-FTL to create a compatible range of blocks for the type of feature and the flash characteristic of the translation table if the checking returns a confirmation that the number of free blocks is available.

Abstract: An aspect includes determining a configuration change to at least one memory device of a memory system. A band switch enable command is sent from a memory controller to the at least one memory device indicating the configuration change. One or more internal circuits of the at least one memory device are set into a quiescent mode based on receiving the band enable command. One or more of a voltage and a frequency of the at least one memory device are adjusted to implement the configuration change. A band switch disable command is sent from the memory controller to the at least one memory device based on completing the adjusting. The one or more internal circuits are enabled to operate using the adjustment based on receiving the band switch disable command from the memory controller.

Abstract: Error checking and correcting (ECC) may be performed in an on-chip memory where an error is corrected by a controller and not the on-chip memory. The controller may be flagged to show that an error has occurred and where it has occurred in the memory. The controller may access ECC bits associated with the error and may fix incorrect data. The error checking may be done in parallel with read operations of the memory so as to lower latency.

Abstract: Examples of techniques for an integrated wafer-level processing system are disclosed. In one example implementation according to aspects of the present disclosure, an integrated wafer-level processing system includes a memory wafer and a processing element connected to the memory wafer via a data connection.

Abstract: Keys are generated at a memory device with a period of time elapsing between generation of each key. A request is received from a memory controller for the most recently generated key. The memory device communicates the first key to the memory controller. Access to nonvolatile memory on the memory device is locked. An unlock command with a second key is received from the memory controller. The memory device determines that the second key matches the first key and unlocks access to the nonvolatile memory in response.

Abstract: A method for operating a memory system comprises receiving a write request associate with data, decoding an address of the write request, receiving thermal data indicating a temperature at the address of the write request, determining whether the temperature is above a threshold temperature, and writing the data to the address responsive to determining that the temperature is not above the threshold temperature.

Abstract: Embodiments of the present disclosure provide an approach for monitoring the health and predicting the failure of dynamic random-access memory (DRAM) devices with embedded error-correcting code (ECC). Additional registers are embedded on the DRAM device to store information about the DRAM, such as the number and location of soft errors detected by the device. When the DRAM device detects a soft error, it will update the information stored in the additional registers. A controller compares the information stored in the additional registers to associated thresholds. In some embodiments, after comparing the information to the associated thresholds, the controller may determine whether to schedule a repair action. In other embodiments, the controller may determine whether to alert the memory controller that the DRAM may be failing.

Abstract: A processor and a method implemented by the processor to obtain computation results are described. The processor includes a unified reuse table embedded in a processor pipeline, the unified reuse table including a plurality of entries, each entry of the plurality of entries corresponding with a computation instruction or a set of computation instructions. The processor also includes a functional unit to perform a computation based on a corresponding instruction.

Abstract: A processor and a method implemented by the processor to obtain computation results are described. The processor includes a unified reuse table embedded in a processor pipeline, the unified reuse table including a plurality of entries, each entry of the plurality of entries corresponding with a computation instruction or a set of computation instructions. The processor also includes a functional unit to perform a computation based on a corresponding instruction.

Abstract: Embodiments of the present disclosure provide an approach for monitoring the health and predicting the failure of dynamic random-access memory (DRAM) devices with embedded error-correcting code (ECC). Additional registers are embedded on the DRAM device to store information about the DRAM, such as the number and location of soft errors detected by the device. When the DRAM device detects a soft error, it will update the information stored in the additional registers. A controller compares the information stored in the additional registers to associated thresholds. In some embodiments, after comparing the information to the associated thresholds, the controller may determine whether to schedule a repair action. In other embodiments, the controller may determine whether to alert the memory controller that the DRAM may be failing.

Abstract: A memory management system and method of managing output data resulting from a memory device storing raw data and error correction coding (ECC) bits are described. The system includes a controller to receive a read command and control a memory device based on the read command, the memory device to store raw data and error correction coding (ECC) bits and output the raw data and the ECC bits corresponding with memory addresses specified in the read command, and an ECC decoder to output an error vector associated with the memory addresses based on the raw data and the ECC bits corresponding with the memory addresses output by the memory device, the error vector associated with the memory addresses indicating errors in the raw data corresponding with the memory addresses. The system also includes a multiplexer (MUX) to output the error vector based on a selection indicated in the read command.

Abstract: A method for operating a memory system includes receiving thermal data indicating a temperature at addresses in a memory array, and a write request associate with data. An address of the write request is decoded. It is determined whether a temperature at the address of the write request is above a threshold temperature. The data is sent to a short latency write queue responsive to determining that the temperature is not above the threshold temperature.

Abstract: A memory management system and method of managing output data resulting from a memory device storing raw data and error correction coding (ECC) bits are described. The system includes a controller to receive a read command and control a memory device based on the read command, the memory device to store raw data and error correction coding (ECC) bits and output the raw data and the ECC bits corresponding with memory addresses specified in the read command, and an ECC decoder to output an error vector associated with the memory addresses based on the raw data and the ECC bits corresponding with the memory addresses output by the memory device, the error vector associated with the memory addresses indicating errors in the raw data corresponding with the memory addresses. The system also includes a multiplexer (MUX) to output the error vector based on a selection indicated in the read command.

Abstract: Keys are generated at a memory device with a period of time elapsing between generation of each key. A request is received from a memory controller for the most recently generated key. The memory device communicates the first key to the memory controller. Access to nonvolatile memory on the memory device is locked. An unlock command with a second key is received from the memory controller. The memory device determines that the second key matches the first key and unlocks access to the nonvolatile memory in response.

Abstract: An aspect includes determining a configuration change to at least one memory device of a memory system. A band switch enable command is sent from a memory controller to the at least one memory device indicating the configuration change. One or more internal circuits of the at least one memory device are set into a quiescent mode based on receiving the band enable command. One or more of a voltage and a frequency of the at least one memory device are adjusted to implement the configuration change. A band switch disable command is sent from the memory controller to the at least one memory device based on completing the adjusting. The one or more internal circuits are enabled to operate using the adjustment based on receiving the band switch disable command from the memory controller.

Abstract: Classifying memory errors may include accessing data from a location within a memory array of a memory device. The memory array may include at least one bit field to store memory error classification information. One or more memory errors in the data may be determined. One or more memory errors may further be classified. In response to the classifying, memory error classification information may be stored as one or more bit values within the bit field.

Abstract: A correctable memory error may be identified at a first address within a memory device. Based on at least the identifying, a first correctable memory error count may be updated from a first quantity to a second quantity. The second quantity may be determined to exceed or not exceed a threshold. In response to the determining, the first correctable memory error count of the second quantity may be: converted to a third quantity and reported to a host device accordingly, reported to a host device, or not reported to a host device.

Abstract: A method, system and memory controller for implementing memory hierarchy placement decisions in a memory system including direct routing of arriving data into a main memory system and selective injection of the data or computed results into a processor cache in a computer system. A memory controller, or a processing element in a memory system, selectively drives placement of data into other levels of the memory hierarchy. The decision to inject into the hierarchy can be triggered by the arrival of data from an input output (IO) device, from computation, or from a directive of an in-memory processing element.

Abstract: Embodiments of the present disclosure provide an approach for monitoring the health and predicting the failure of dynamic random-access memory (DRAM) devices with embedded error-correcting code (ECC). Additional registers are embedded on the DRAM device to store information about the DRAM, such as the number and location of soft errors detected by the device. When the DRAM device detects a soft error, it will update the information stored in the additional registers. A controller compares the information stored in the additional registers to associated thresholds. In some embodiments, after comparing the information to the associated thresholds, the controller may determine whether to schedule a repair action. In other embodiments, the controller may determine whether to alert the memory controller that the DRAM may be failing.

Abstract: Classifying memory errors may include accessing data from a location within a memory array of a memory device. The memory array may include at least one bit field to store memory error classification information. One or more memory errors in the data may be determined. One or more memory errors may further be classified. In response to the classifying, memory error classification information may be stored as one or more bit values within the bit field.