Patents by Inventor Hin-Hsun HSIEH

Hin-Hsun HSIEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120007135
    Abstract: An exemplary semiconductor device is provided. The semiconductor device includes a semiconductor stacked layer and a conductive structure. The conductive structure is located on the semiconductor stacked layer. The conductive structure includes a bottom portion and a top portion on opposite sides thereof. The bottom portion is in contact with the semiconductor stacked layer. A ratio of a top width of the top portion to a bottom width of the bottom portion is less than 0.7. The conductive structure can be a conductive dot structure or a conductive line structure.
    Type: Application
    Filed: September 19, 2011
    Publication date: January 12, 2012
    Inventors: Chiu-Lin YAO, Hin-Hsun HSIEH, Tzer-Perng CHEN