Abstract: Disclosed is a semiconductor memory having a hierarchical bit line and/or word line architecture. In one embodiment, a memory having a hierarchical bit line architecture, particularly suitable for cells smaller than 8F.sup.2, includes a master bit line pair in each column, including first and second master bit lines with portions vertically spaced from one another. The first and second master bit lines twist with respect to one another in the vertical direction such that the first master bit line alternately overlies and underlies the second master bit line. A plurality of local bit line pairs in each column are coupled to memory cells, with at least one of the local bit lines coupled to a master bit line. In other embodiments, hierarchical word line configurations are disclosed including master word lines, sub-master word lines, and local word lines, electrically interconnected to one another via either switches, electrical contacts, or electrical circuits.

Abstract: A method and apparatus for repairing a semiconductor memory device. A row redundancy replacement arrangement is provided to repair the memory device consisting of a first plurality of redundant true word lines and a second plurality of redundant complement word lines to simultaneously replace the same first number of first normal word lines and the same second number of the normal complement word lines. An address reordering scheme, preferably implemented as a word line selector circuit and controlled by redundancy control logic and address inputs, allows the redundant true (complement) word lines to replace the normal true (complement) word lines when making the repair. The redundancy replacement arrangement ensures that consistency of the bit map is maintained at all times, irrespective whether the memory device operates in a normal or in a redundancy mode. This approach introduces an added flexibility of incorporating the redundancy replacement without affecting the column access speed.

Abstract: A modular, threaded container for growing plants and subsequently increasing size of the container. Modules are arranged to be stacked on one another to increase overall height of the modular assembly. Individual modules include a top module having bottom threading only, intermediate modules open at the top and bottom and having top and bottom threading, and a bottom module having a floor and threading at the top only. The container may optionally include frustoconical modules, a first frustoconical bottom module configured to replace an open intermediate module with a module closed at the bottom, and a second frustoconical module closed at the bottom of dimensions and configuration different from those of the first bottom module. The plant is grown in a container having relatively few modules. After growth has occurred, the bottom module is removed and an intermediate module open at both ends is filled with growing medium and is inserted in series prior to replacing the bottom module.

Abstract: A circuit and method of using a test mode to control the timing of an internal signal using an external control in an integrated circuit. The test mode is designed such that the timing of the internal signal is derived from the external control which can be arbitrarily controlled by a tester. The external signal can be applied to an existing pin for chip control, provided that there is no conflict between the test mode and the operation of the integrated circuit.

Abstract: A method for generating a floating bitline test mode using digitally controllable bitline equalizers is provided. The method utilizes digitally controlled dummy timing cycles to detect a leaky bitline during the floating bitline test mode. A negative pulsed TEST signal is generated to cause the bitline equalizers to go low and cause the floating bitline state. The implementation of dummy timing cycles eliminates the need for additional external control of internal timings during a bitline test mode. Upon the termination of the dummy timing cycle, the normal read operation continues without interruption.

Abstract: A semiconductor structure having electrical conductors positioned over each other, but electrically isolated from each other, is disclosed. The lower conductor has a recess in its upper surface, and the recess is at least partially filled with an oxide-type material, thereby isolating the lower conductor from the upper conductor. These conductors would normally contact each other because of the somewhat imprecise patterning and etching steps used to fabricate a multitude of conductive elements, e.g., in a very dense semiconductor structure. Stacked capacitor cells incorporating this structure are also disclosed.

Abstract: Improved gas exhaust apparatus of a semiconductor plant for substantially reducing the accumulation of solid substance on the surface of a gas exhaust system is disclosed. The apparatus includes a heating section for providing a thermal chamber, thereby transforming incoming gas and oxygen into solid substance. A barrier section is secured to an inner surface of the heating section for preventing the solid substance from accumulating on the inner surface of the heating section. A scrubbing section attached to the heating section is used to expel the solid substance out of the gas exhaust apparatus.

Abstract: A circuit and method of using a test mode to control the timing of an internal signal using an external control in an integrated circuit. The test mode is designed such that the timing of the internal signal is derived from the external control which can be arbitrarily controlled by a tester. The external signal can be applied to an existing pin for chip control, provided that there is no conflict between the test mode and the operation of the integrated circuit.

Abstract: A semiconductor structure to prevent gate wrap-around and corner parasitic leakage comprising a semiconductor substrate having a planar surface. A trench is located in the substrate, the trench having a sidewall. An intersection of the trench and the surface forms a corner. A dielectric lines the sidewall of the trench. And, a corner dielectric co-aligned with the corner extends a subminimum dimension distance over the substrate from the corner.

Abstract: Row redundancy control circuits which effectively reduce design space are arranged parallel to word direction and are arranged at the bottom of the redundancy block. This architecture change makes it possible to effectively lay out the redundancy control block by introducing (1) split-global-bus shared with local row redundancy wires, (2) half-length-one-way row redundancy-wordline-enable-signal wires which allows space saving, and (3) distributed wordline enable decoders designed to take advantage of the saved space. An illegal normal/redundancy access problem caused by the address versus timing skew has also been solved. The timing necessary for this detection is given locally by using its adjacent redundancy match detection. This allows the circuit to operate completely as an address driven circuit, resulting in fast and reliable redundancy match detection. In addition, a sample wordline enable signal (SWLE) is generated by using row redundancy match detection.

Abstract: A method of testing a RAM. The RAM array is arranged in rows and columns. The rows are grouped into word line groups. The method includes the steps of: a) asserting an array select signal; b) selecting a group of rows in the array; c) selecting at least one row of the selected group of rows; and, d) repeating steps b and c until all of the groups are selected. Array Sense Amps may be set when the first group is selected and remain set until the last group is selected. In one test, word lines in all of the selected rows are activated and remain activated until the final selected row is selected. In a second test, word lines in selected groups are toggled with RAS. If a group contains a known defective word line, that group is either not addressed or its selection is disabled. In each selected group, one row, alternating rows or, all of the rows may be selected.

Abstract: A latched row decoder for a Random Access Memory (RAM). The Decoder includes a set-reset latch that is set when addressed and remains set until reset by a PRE signal; address select logic; a reset device; and gated word line drives. The latch, when set, enables four word line drivers that are driven individually depending on two row address bits. During test, latched decoders may be selected sequentially and not reset, leaving drivers enabled until a test is complete. Thus some or all word lines may be driven simultaneously during test. A RAM including the latched decoder of the present invention has a normal random access mode and at least 4 test modes. The test modes are: Long t.sub.RAS word line disturb mode; toggled word line disturb mode; transfer gate stress mode; and a stress test mode.

Abstract: In the Preferred embodiment of the present invention, a bit line pair is coupled through a pair of high-resistance pass gates to a sense amp. During sense, the high-resistance pass gates act in conjunction with the charge stored on the bit line pair as, effectively, a high-resistance passive load for the sense amp. A control circuit selectively switches on and off bit line equalization coincident with selectively passing either the equalization voltage or set voltages to the sense amp and an active sense amp load. Further, after it is set, the sense amp is selectively connected to LDLs through low-resistance column select pass gates. Therefore, the sense amp quickly discharges one of the connected LDL pair while the bit line voltage remains essentially unchanged. Thus, data is passed from the sense amp to a second sense amplifier and off chip. After data is passed to the LDLs, the control circuit enables the active sense amp load to pull the sense amp high side to a full up level.

Abstract: An improved method for isolating electrical conductors which are positioned over each other is disclosed. These conductors would normally contact each other because of the somewhat imprecise patterning and etching steps used to fabricate a multitude of conductive elements, e.g., in a very dense semiconductor structure. The method involves forming a recess in the upper surface of the lower conductor, and then at least partially filling the recess with an oxide-type material. This method is particularly valuable in the construction of stacked capacitor cells. Cells prepared using this technique also form part of this invention.

Abstract: A Dynamic Random Access Memory (DRAM) including an array of memory cells arranged in rows and columns, a word line in each row responsive to a row address and, a pair of complementary bit lines in each column. The DRAM also includes a sense amp in each column connected between a sense enable and the pair of complementary bit lines. The sense amp is a pair of cross coupled NFETs, with the sources of the NFETs connected to the sense amp enable. A bit line pre-charge is connected to each pair of complementary bit lines. The bit line pre-charge is connected between the complementary bit line pair and a reference voltage. A test control circuit selectively holds the sense amp disabled and the bit line pairs in a pre-charge state in response to a test control signal. An active sense amp load connected between the sense amp and a load enable latches data in the sense amp. The active sense amp load is a pair of cross coupled PFETs connected to the sense amp with the sources of the PFETs connected to the load enable.

Abstract: An anomalous threshold voltage dependence on channel width measured on 0.25 .mu.m ground rule generation trench-isolated buried-channel p-MOSFETs is used to enhance circuit performance. As the channel width is reduced, the magnitude of the threshold voltage first decreases before the onset of the expected sharp rise in V.sub.t for widths narrower than 0.4 .mu.m. Modeling shows that a "boron puddle" is created near the trench bounded edge as a result of transient enhanced diffusion (TED) during the gate oxidation step, which imposes a penalty on the off-current of narrow devices. TED is governed by interstitials produced by a deep phosphorus implant, used for latchup suppression, diffusing towards the trench sidewall and top surface of the device.

Abstract: A method for forming a capacitor on a substrate having a contact below a top layer including the steps of:Spinning on a layer of photoresist material. Exposing the photoresist to light to establish a standing wave pattern to fix prominences of photoresist separated by separation areas. Each prominence extends a prominence height from the top layer to a top. Developing the photoresist to fix an erose face on each prominence, each face extending from the top layer to the top. Depositing a first oxide intermediate prominences to effect accumulation of the first oxide to an oxide height at least equal to the prominence height. Etching the first oxide to expose each top. Dissolving the photoresist to uncover oxide mandrels. Each mandrel extends a mandrel height from the top layer to a mandrel top; each mandrel has an erose mandrel face intermediate the top layer and the mandrel top. Etching the top layer to expose the contact.

Abstract: A semiconductor structure to prevent gate wrap-around and corner parasitic leakage comprising a semiconductor substrate having a planar surface. A trench is located in the substrate, the trench having a sidewall. An intersection of the trench and the surface forms a corner. A dielectric lines the sidewall of the trench. And, a corner dielectric co-aligned with the corner extends a subminimum dimension distance over the substrate from the corner.

Abstract: The present invention is a bus arrangement for a wide I/O Random Access Memory (RAM). The bus arrangement includes a global address bus which drives row/column predecoders and redundancy comparators placed at each edge of the memory array. Two banks of sixteen data I/O (DQs), one bank for each half chip, are placed at either end of the chip providing up to a .times.32 I/O organization. The main Read/Write Data lines (RWD) are more densely populated near the chip edge than the chip center to provide .times.4 and .times.8 options, as well. A local address bus is in the open space between the RWDs to redrive the global address lines at their quarter points.

Abstract: A hybrid open/folded bit line sense amplifier arrangement and accompanying circuitry primarily for use on a ULSI DRAM memory chip to reduce the area needed for a memory cell and eliminate noise between bit lines. The circuitry includes two memory arrays containing a plurality of memory cells interconnected by a plurality of bit lines and word lines. In the preferred embodiment, the memory cells are accessible on every two out of three bit lines encountered by a word line. A set of open bit line sense amplifiers each with two connectors, one multiplexed to a number of bit lines in the first array and the other multiplexed to a number of bit lines in the second array is provided. Each memory array has a set of folded bit line sense amplifiers with two connectors each connector multiplexed to a number of bit lines in the array. The control circuitry with multiplexing ensures that the connectors of the sense amplifiers access only one bit lines at a time.