Abstract: An anomalous threshold voltage dependence on channel width measured on 0.25 .mu.m ground rule generation trench-isolated buried-channel p-MOSFETs is used to enhance circuit performance. As the channel width is reduced, the magnitude of the threshold voltage first decreases before the onset of the expected sharp rise in V.sub.t for widths narrower than 0.4 .mu.m. Modeling shows that a "boron puddle" is created near the trench bounded edge as a result of transient enhanced diffusion (TED) during the gate oxidation step, which imposes a penalty on the off-current of narrow devices. TED is governed by interstitials produced by a deep phosphorus implant, used for latchup suppression, diffusing towards the trench sidewall and top surface of the device.

Abstract: A method for forming a capacitor on a substrate having a contact below a top layer including the steps of:Spinning on a layer of photoresist material. Exposing the photoresist to light to establish a standing wave pattern to fix prominences of photoresist separated by separation areas. Each prominence extends a prominence height from the top layer to a top. Developing the photoresist to fix an erose face on each prominence, each face extending from the top layer to the top. Depositing a first oxide intermediate prominences to effect accumulation of the first oxide to an oxide height at least equal to the prominence height. Etching the first oxide to expose each top. Dissolving the photoresist to uncover oxide mandrels. Each mandrel extends a mandrel height from the top layer to a mandrel top; each mandrel has an erose mandrel face intermediate the top layer and the mandrel top. Etching the top layer to expose the contact.

Abstract: A semiconductor structure to prevent gate wrap-around and corner parasitic leakage comprising a semiconductor substrate having a planar surface. A trench is located in the substrate, the trench having a sidewall. An intersection of the trench and the surface forms a corner. A dielectric lines the sidewall of the trench. And, a corner dielectric co-aligned with the corner extends a subminimum dimension distance over the substrate from the corner.

Abstract: The present invention is a bus arrangement for a wide I/O Random Access Memory (RAM). The bus arrangement includes a global address bus which drives row/column predecoders and redundancy comparators placed at each edge of the memory array. Two banks of sixteen data I/O (DQs), one bank for each half chip, are placed at either end of the chip providing up to a .times.32 I/O organization. The main Read/Write Data lines (RWD) are more densely populated near the chip edge than the chip center to provide .times.4 and .times.8 options, as well. A local address bus is in the open space between the RWDs to redrive the global address lines at their quarter points.

Abstract: A hybrid open/folded bit line sense amplifier arrangement and accompanying circuitry primarily for use on a ULSI DRAM memory chip to reduce the area needed for a memory cell and eliminate noise between bit lines. The circuitry includes two memory arrays containing a plurality of memory cells interconnected by a plurality of bit lines and word lines. In the preferred embodiment, the memory cells are accessible on every two out of three bit lines encountered by a word line. A set of open bit line sense amplifiers each with two connectors, one multiplexed to a number of bit lines in the first array and the other multiplexed to a number of bit lines in the second array is provided. Each memory array has a set of folded bit line sense amplifiers with two connectors each connector multiplexed to a number of bit lines in the array. The control circuitry with multiplexing ensures that the connectors of the sense amplifiers access only one bit lines at a time.

Abstract: Nucleic acid sequences encoding the bacterial cellulose synthase operon derived from Acetobacter are disclosed. Methods for isolating the genes, vectors containing the genes, and transformed hosts useful for the expression of recombinant bacterial cellulose synthase or production of cellulose are also described.