Patents by Inventor Hiraku Kozuka
Hiraku Kozuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8487237Abstract: Provided is a rotary encoder, including: a rotary scale, which has a predetermined pattern including continuous patterns and a rotational angle original point formed thereon with reference to a pattern center, has a polygonal outer shape, and has the rotational angle original point defined with reference to at least one side of sides of the polygonal outer shape; a hub, which includes projections for abutting the sides of the polygonal outer shape of the rotary scale and positioning the rotary scale; a rotating shaft, which is press-fitted into the hub and rotates coaxially with the pattern center of the rotary scale; and detecting units for irradiating the rotary scale with light and detecting the light reflected by the rotary scale.Type: GrantFiled: March 17, 2011Date of Patent: July 16, 2013Assignees: Canon Kabushiki Kaisha, Canon Precision Inc.Inventors: Ikuo Watanabe, Masahiko Igaki, Chihiro Nagura, Hiraku Kozuka, Satoru Hamasaki, Makoto Ogura, Tsutomu Nagao, Yasuji Yokoyama
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Publication number: 20120049051Abstract: Provided is a rotary encoder, including: a rotary scale, which has a predetermined pattern including continuous patterns and a rotational angle original point formed thereon with reference to a pattern center, has a polygonal outer shape, and has the rotational angle original point defined with reference to at least one side of sides of the polygonal outer shape; a hub, which includes projections for abutting the sides of the polygonal outer shape of the rotary scale and positioning the rotary scale; a rotating shaft, which is press-fitted into the hub and rotates coaxially with the pattern center of the rotary scale; and detecting units for irradiating the rotary scale with light and detecting the light reflected by the rotary scale.Type: ApplicationFiled: March 17, 2011Publication date: March 1, 2012Applicants: CANON PRECISION INC., CANON KABUSHIKI KAISHAInventors: Ikuo WATANABE, Masahiko Igaki, Chihiro Nagura, Hiraku Kozuka, Satoru Hamasaki, Makoto Ogura, Tsutomu Nagao, Yasuji Yokoyama
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Patent number: 7889254Abstract: To prevent such a situation that a signal from a pixel in a dark state is output at a level shifted from an originally set level to deteriorate an image quality, and to improve the image quality.Type: GrantFiled: July 18, 2008Date of Patent: February 15, 2011Assignee: Canon Kabushiki KaishaInventors: Tetsunobu Kochi, Kazuo Yamazaki, Hiraku Kozuka
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Publication number: 20080278611Abstract: To prevent such a situation that a signal from a pixel in a dark state is output at a level shifted from an originally set level to deteriorate an image quality, and to improve the image quality.Type: ApplicationFiled: July 18, 2008Publication date: November 13, 2008Applicant: CANON KABUSHIKI KAISHAInventors: Tetsunobu Kochi, Kazuo Yamazaki, Hiraku Kozuka
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Patent number: 7423790Abstract: To prevent such a situation that a signal from a pixel in a dark state is output at a level shifted from an originally set level to deteriorate an image quality, and to improve the image quality.Type: GrantFiled: March 11, 2005Date of Patent: September 9, 2008Assignee: Canon Kabushiki KaishaInventors: Tetsunobu Kochi, Kazuo Yamazaki, Hiraku Kozuka
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Patent number: 7235831Abstract: In order to reduce the capacitance of a light-receiving element, the present invention provides a light-receiving element which includes a first semiconductor region of the first conductivity type, a second semiconductor region of the second conductivity type, provided on the first semiconductor region, a third semiconductor region of the first conductivity type, provided between the second semiconductor region and an insulating film and an electrode region of the second conductivity type, provided in the second semiconductor region where the third semiconductor region is absent on and above the second semiconductor region, and connected to an anode or cathode electrode consisting of a conductor.Type: GrantFiled: August 11, 2003Date of Patent: June 26, 2007Assignee: Canon Kabushiki KaishaInventors: Hiraku Kozuka, Toru Koizumi, Koji Sawada
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Patent number: 7151305Abstract: In a photoelectric conversion device including a first-conductivity type first semiconductor region located in a pixel region, a second-conductivity type second semiconductor region provided in the first semiconductor region, and a wiring for electrically connecting the second semiconductor region to a circuit element located outside the pixel region, a shield is provided on the light-incident side of the wiring, via an insulator in such a way that it covers at least part of the wiring and also the shield includes a conductor whose potential stands fixed. This photoelectric conversion device may hardly be affected with low-frequency radiated noises as typified by power-source noise.Type: GrantFiled: March 25, 2005Date of Patent: December 19, 2006Assignee: Canon Kabushiki KaishaInventors: Hiraku Kozuka, Takahiro Kaihotsu
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Patent number: 6962405Abstract: In a case where first wirings (wirings for a driving power supply (VH)) commonly connected to a plurality of electro-thermal converting elements and adapted to supply an electric power to the plurality of electro-thermal converting elements and second wirings (high voltage grounding wirings (GNDH)) for connecting source areas of respective switching elements to grounding potential are provided, resistance of the second wiring is selected to be smaller than resistance of the first wiring.Type: GrantFiled: August 8, 2003Date of Patent: November 8, 2005Assignee: Canon Kabushiki KaishaInventors: Yoshiyuki Imanaka, Kei Fujita, Hiraku Kozuka, Mineo Shimotsusa, Yukihiro Hayakawa, Takuya Hatsui, Muga Mochizuki, Souta Takeuchi, Takashi Morii, Takaaki Yamaguchi, Kousuke Kubo
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Patent number: 6950132Abstract: There is provided a method of driving an image sensor which can remove FPN resulting from inter-chip variations without requiring any dark correction. A semiconductor photosensor chip has a plurality of sensor modules mounted on a mounting substrate, and a semiconductor device in which at least an N signal input buffer circuit for receiving N signals, an S signal input buffer circuit for receiving S signals, a differential circuit for calculating any difference between the outputs from the N and S signal input buffer circuits, and a voltage clamping circuit for clamping the output from the differential circuit are formed on a single semiconductor substrate, and the voltage clamping circuit clamps the reset state of S and N signal common output line.Type: GrantFiled: September 28, 1998Date of Patent: September 27, 2005Assignee: Canon Kabushiki KaishaInventor: Hiraku Kozuka
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Publication number: 20050206763Abstract: To prevent such a situation that a signal from a pixel in a dark state is output at a level shifted from an originally set level to deteriorate an image quality, and to improve the image quality.Type: ApplicationFiled: March 11, 2005Publication date: September 22, 2005Applicant: CANON KABUSHIKI KAISHAInventors: Tetsunobu Kochi, Kazuo Yamazaki, Hiraku Kozuka
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Publication number: 20050167710Abstract: In a photoelectric conversion device comprising a first-conductivity type first semiconductor region located in a pixel region, a second-conductivity type second semiconductor region provided in the first semiconductor region, and a wiring for electrically connecting the second semiconductor region to a circuit element located outside the pixel region, a shield is provided on the light-incident side of the wiring, via an insulator in such a way that it covers at least part of the wiring and also the shield comprises a conductor whose potential stands fixed. This photoelectric conversion device may hardly be affected with low-frequency radiated noises as typified by power-source noise.Type: ApplicationFiled: March 25, 2005Publication date: August 4, 2005Inventors: Hiraku Kozuka, Takahiro Kaihotsu
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Patent number: 6878977Abstract: In a photoelectric conversion device comprising a first-conductivity type first semiconductor region located in a pixel region, a second-conductivity type second semiconductor region provided in the first semiconductor region, and a wiring for electrically connecting the second semiconductor region to a circuit element located outside the pixel region, a shield is provided on the light-incident side of the wiring, via an insulator in such a way that it covers at least part of the wiring and also the shield comprises a conductor whose potential stands fixed. This photoelectric conversion device may hardly be affected with low-frequency radiated noises as typified by power-source noise.Type: GrantFiled: February 23, 2000Date of Patent: April 12, 2005Assignee: Canon Kabushiki KaishaInventors: Hiraku Kozuka, Takahiro Kaihotsu
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Publication number: 20050068432Abstract: There is provided a method of driving an image sensor which can remove FPN resulting from inter-chip variations without requiring any dark correction. A semiconductor photosensor chip has a plurality of sensor modules mounted on a mounting substrate, and a semiconductor device in which at least an N signal input buffer circuit for receiving N signals, an S signal input buffer circuit for receiving S signals, a differential circuit for calculating any difference between the outputs from the N and S signal input buffer circuits, and a voltage clamping circuit for clamping the output from the differential circuit are formed on a single semiconductor substrate, and the voltage clamping circuit clamps the reset state of S and N signal common output line.Type: ApplicationFiled: October 19, 2004Publication date: March 31, 2005Applicant: CANON KABUSHIKI KAISHAInventor: Hiraku Kozuka
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Patent number: 6822289Abstract: A semiconductor device having a high source breakdown voltage and high performance and high reliability and a liquid jet apparatus are provided. In a semiconductor device having a switching element for flowing current through a load and a circuit for driving the switching element, respectively formed on the same substrate, the circuit has a source follower transistor for generating a drive voltage to be applied to a control electrode of the switching element, and the source region of the source follower transistor has a first doped region connected to the source electrode and a second doped region having an impurity concentration lower than that of the first doped region, the second doped region forming a pn junction with a semiconductor region forming a channel.Type: GrantFiled: February 20, 2003Date of Patent: November 23, 2004Assignee: Canon Kabushiki KaishaInventors: Hiraku Kozuka, Osamu Iketa, Mineo Shimotsusa, Takashi Morii
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Publication number: 20040160485Abstract: In a case where first wirings (wirings for a driving power supply (VH)) commonly connected to a plurality of electro-thermal converting elements and adapted to supply an electric power to the plurality of electro-thermal converting elements and second wirings (high voltage grounding wirings (GNDH)) for connecting source areas of respective switching elements to grounding potential are provided, resistance of the second wiring is selected to be smaller than resistance of the first wiring.Type: ApplicationFiled: August 8, 2003Publication date: August 19, 2004Applicant: CANON KABUSHIKI KAISHAInventors: Yoshiyuki Imanaka, Kei Fujita, Hiraku Kozuka, Mineo Shimotsusa, Yukihiro Hayakawa, Takuya Hatsui, Muga Mochizuki, Souta Takeuchi, Takashi Morii, Takaaki Yamaguchi, Kousuke Kubo
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Publication number: 20040046194Abstract: In order to reduce the capacitance of a light-receiving element, the present invention provides a light-receiving element comprises a first semiconductor region of the first conductivity type, a second semiconductor region of the second conductivity type, provided on the first semiconductor region, a third semiconductor region of the first conductivity type, provided between the second semiconductor region and an insulating film and an electrode region of the second conductivity type, provided in the second semiconductor region where the third semiconductor region is absent on and above the second semiconductor region, and connected to an anode or cathode electrode consisting of a conductor.Type: ApplicationFiled: August 11, 2003Publication date: March 11, 2004Applicant: CANON KABUSHIKI KAISHAInventors: Hiraku Kozuka, Toru Koizumi, Koji Sawada
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Patent number: 6649951Abstract: In order to reduce the capacitance of a light-receiving element, the present invention provides a light-receiving element comprises a first semiconductor region of the first conductivity type, a second semiconductor region of the second conductivity type, provided on the first semiconductor region, a third semiconductor region of the first conductivity type, provided between the second semiconductor region and an insulating film and an electrode region of the second conductivity type, provided in the second semiconductor region where the third semiconductor region is absent on and above the second semiconductor region, and connected to an anode or cathode electrode consisting of a conductor.Type: GrantFiled: October 31, 2002Date of Patent: November 18, 2003Assignee: Canon Kabushiki KaishaInventors: Hiraku Kozuka, Toru Koizumi, Koji Sawada
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Publication number: 20030155585Abstract: A semiconductor device having a high source breakdown voltage and high performance and high reliability and a liquid jet apparatus are provided. In a semiconductor device having a switching element for flowing current through a load and a circuit for driving the switching element, respectively formed on the same substrate, the circuit has a source follower transistor for generating a drive voltage to be applied to a control electrode of the switching element, and the source region of the source follower transistor has a first doped region connected to the source electrode and a second doped region having an impurity concentration lower than that of the first doped region, the second doped region forming a pn junction with a semiconductor region forming a channel.Type: ApplicationFiled: February 20, 2003Publication date: August 21, 2003Applicant: CANON KABUSHIKI KAISHAInventors: Hiraku Kozuka, Osamu Iketa, Mineo Shimotsusa, Takashi Morii
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Patent number: 6608299Abstract: A photoelectric conversion apparatus is comprised of a light-receiving element having a first semiconductor region of a first conduction type, and a second semiconductor region of a second conduction type for storing a charge generated by photoelectric conversion adjacent to the first semiconductor region, a readout electrode for reading a signal based on the charge stored in the second semiconductor region; and at least a pair of electrode portions spaced from each other along a photoreceptive surface so as to place a photoreceptive portion of the second semiconductor region in between, and connected to the first semiconductor region. Applied to the pair of electrode portions is a voltage that completely depletes the photoreceptive portion of the second semiconductor region and that can create a potential gradient for moving the charge stored in the second semiconductor region, to the readout electrode side.Type: GrantFiled: November 21, 2001Date of Patent: August 19, 2003Assignee: Canon Kabushiki KaishaInventor: Hiraku Kozuka
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Patent number: 6590242Abstract: In order to reduce the capacitance of a light-receiving element, the present invention provides a light-receiving element comprises a first semiconductor region of the first conductivity type, a second semiconductor region of the second conductivity type, provided on the first semiconductor region, a third semiconductor region of the first conductivity type, provided between the second semiconductor region and an insulating film and an electrode region of the second conductivity type, provided in the second semiconductor region where the third semiconductor region is absent on and above the second semiconductor region, and connected to an anode or cathode electrode consisting of a conductor.Type: GrantFiled: February 24, 2000Date of Patent: July 8, 2003Assignee: Canon Kabushiki KaishaInventors: Hiraku Kozuka, Toru Koizumi, Koji Sawada