Abstract: A photoelectric conversion device includes a plurality of photoelectric conversion units and a signal output unit. The signal output unit has at least one storage device for storing electrical signals generated by the photoelectric conversion device. A scanning device scans the electrical signals generated by the electric conversion units, and a reading device reads out electrical signals generated by the photoelectric conversion units. Each of the photoelectric conversion units includes a light absorption layer and a multiplication layer. The multiplication layer includes at least one step-back structure which multiplies carriers produced by absorption of light, and in which a forbidden band width changes continuously from a minimum to a maximum width.

Abstract: A photoelectric conversion apparatus has an element separation structure that is adequate as to crosstalk between pixels and excellent in FPN characteristics. The photoelectric conversion apparatus comprises a semiconductor substrate of a first conduction type, a plurality of first semiconductor regions formed in a surface of the semiconductor substrate and having the opposite conduction type to that of the substrate, a second semiconductor region having the same conduction type as the first semiconductor regions and disposed between the plurality of first semiconductor regions thus formed, and a third semiconductor region disposed between the first and second semiconductor regions having the first conduction type, and having an impurity concentration higher than that of the semiconductor substrate.

Abstract: Compatibility of high sensitivity with low remaining images, and low crosstalk can be achieved by a laminated solid-state image pickup device, which includes accumulating portions for accumulating electric signals, reading units for reading the electric signals, connecting members formed in contact with the accumulating portions, and a photoconductive film, and by a method for manufacturing the device. The photoconductive film is made of a non-crystalline semiconductor, and is configured by laminating a carrier multiplication layer, a light absorbing layer, a charge injection inhibiting layer of a second conduction type. Each of the connecting members is made of a semiconductor layer of a first conduction type, intrinsic or having a low impurity density, surrounded by a semiconductor layer of the second conduction type or a conductive material.

Abstract: In order to reduce the dark current due to an interfacial defect and effect higher sensitivity, there is disclosed a manufacturing method for a photoelectric conversion device having a light absorbing layer and a carrier multiplying layer at least having a non-single crystalline semiconductor, the carrier multiplying layer being composed of a plurality of graded layers of which the forbidden band width continuously changes from the minimum forbidden band width Eg1 to the maximum forbidden band width Eg2, wherein there is an energy step sufficient to avalanche multiply the carriers between a region of the maximum forbidden band width Eg2 and a region of the minimum forbidden band width Eg1 adjacent thereto, when an electric field is applied, characterized in that after the deposition of any one of the region of the minimum forbidden band width Eg1 and the region of the maximum forbidden band width Eg2, the plasma treatment is performed with a gas at least containing oxygen or nitrogen, and further the other re

Abstract: A solid-state image sensing apparatus including: a substrate having a charge storage portion capable of storing charges and an output circuit for outputting a signal in accordance with the charges stored in the storage portion; an insulating film formed on the surface of the substrate and having an opening formed above the charge storage portion; and a photosensitive layer formed on the insulating film and electrically connected to the charge storage portion via the opening, wherein an embedded region is formed within the opening and the surface of the insulating film and that of the embedded region are substantially flattened.

Abstract: Compatibility of high sensitivity with low remaining images, and low crosstalk can be achieved by a laminated solid-state image pickup device, which includes accumulating portions for accumulating electric signals, reading units for reading the electric signals, connecting members formed in contact with the accumulating portions, and a photoconductive film, and by a method for manufacturing the device. The photoconductive film is made of a non-crystalline semiconductor, and is configured by laminating a carrier multiplication layer, a light absorbing layer, a charge injection inhibiting layer of a second conduction type. Each of the connecting members is made of a semiconductor layer of a first conduction type, intrinsic or having a low impurity density, surrounded by a semiconductor layer of the second conduction type or a conductive material.

Abstract: A photoelectric conversion device includes a plurality of photoelectric conversion units and a signal output unit. The signal output unit has at least one storage device for storing electrical signals generated by the photoelectric conversion device. A scanning device scans the electrical signals generated by the electric conversion units, and a reading device reads out electrical signals generated by the photoelectric conversion units. Each of the photoelectric conversion units includes a light absorption layer and a multiplication layer. The multiplication layer includes at least one step-back structure which multiplies carriers produced by absorption of light, and in which a forbidden band width changes continuously from a minimum to a maximum width.

Abstract: A method for producing a non-monocrystalline semiconductor device, such as amorphous silicon TFT, by forming at least two non-monocrystalline semiconductor films in successive manner on a substrate by plasma CVD, in which the film-growing surface and the interfaces of the formed films are constantly maintained in a plasma atmosphere until the end of film formation. In this manner the interface regions are protected from damage caused by the initial stage of plasma and eventual deposition of impurities in such regions. This is achieved, for example, by spreading the plasma area during the transfer of the substrate between the film-forming chambers.

Abstract: A photoelectric converting device has non-monocrystalline semiconductor layers of PIN structure laminated on mutually isolated plural pixel electrodes. P- or N-doped layer on the pixel electrode contains at least a microcrystalline structure. N- or P-doped layer on the area other than the pixel electrode is amorphous.