Abstract: There is provided a near-infrared sensor cover to be applied to a near-infrared sensor including a transmitting unit that transmits near-infrared radiation and a receiving unit that receives near-infrared radiation reflected by an object. The near-infrared sensor cover includes a cover main body portion disposed with a thickness direction thereof to be coincide with a transmission and reception direction of the near-infrared radiation and covering the transmitting unit and the receiving unit, and a heater wire disposed on the cover main body portion to generate heat when energized. The heater wire includes plural straight line portions that extend in parallel to each other and plural connection portions that connect end portions of adjacent straight line portions. An interval between adjacent straight line portions ranges from 3 mm to 10 mm, and a diameter of the heater wire ranges from 0.01 mm to 0.2 mm.

Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with a second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate.

Abstract: A silver mirror film includes a plurality of silver particles arranged in a film surface direction, a plurality of interparticle silicon particles between the silver particles, and a plurality of surface silicon particles on surfaces of the silver particles so as to at least partially cover the surfaces. The interparticle silicon particles and the surface silicon particles are present as (SixO2y)n{x?1, y?1, and n?1}.

Abstract: An ink jet recording method includes ejecting an ultraviolet-ray curable ink of which a viscosity at 28° C. is 8 mPa·s or more from a head to a recording medium, and curing the ultraviolet-ray curable ink attached to the recording medium, wherein, in the ejecting of the ultraviolet-ray curable ink, the ultraviolet-ray curable ink is heated such that a temperature of the ejected ultraviolet-ray curable ink becomes 28° C. to 40° C., and a viscosity of the ultraviolet-ray curable ink at the temperature is 15 mPa·s or less.

Abstract: A medical safety needle is comprised of a needle body having a needlepoint, a covering body having a detent portion slidable on the needle body to catch the needlepoint so as to cover the needlepoint, and a resilient cantilever supporting the detent portion, a sleeve following the covering body to cover a side face of the needle body, a collar portion slidably fitting on the covering body, which is configured to get in contact with the cantilever to press the cantilever radially inwardly, and a housing being formed in a unitary body with the collar portion or having an end face on which the collar portion is capable of being seated, the housing being configured to carry the covering body from a first position to have the needlepoint exposed to a second position to have the needlepoint covered by the covering body.

Abstract: A method of making a semiconductor device includes forming a first source/drain trench and a second source/drain trench over a first and second source/drain region, respectively; forming a first silicon dioxide layer in the first source/drain trench and a second silicon dioxide layer in the second source/drain trench; forming a first source/drain contact over the first source/drain region, the first source/drain contact including a first tri-layer contact disposed between the first silicon dioxide layer and a first conductive material; and forming a second source/drain contact over the second source/drain region, the second source/drain contact including a second tri-layer contact disposed between the second silicon dioxide layer and a second conductive material; wherein the first tri-layer contact includes a first metal oxide layer in contact with the first silicon dioxide layer, and the second tri-layer contact includes a second metal oxide layer in contact with the second silicon dioxide layer.

Abstract: By a QTL analysis and so forth using 4-HPPD inhibitor-susceptible rice and 4-HPPD inhibitor-resistant rice, a hypothetical gene (HIS1 gene) of an iron/ascorbate-dependent oxidoreductase gene located on a short arm of chromosome 2 of rice has been identified as a 4-HPPD inhibitor-resistance gene. Further, it has also been revealed that a homologous gene (HSL1 gene) of the HIS1 gene is located on chromosome 6 of rice. Furthermore, it has been found out that utilizations of these genes make it possible to efficiently produce a plant having increased resistance or susceptibility to a 4-HPPD inhibitor and to efficiently determine whether a plant has resistance or susceptibility to a 4-HPPD inhibitor.

Abstract: Provided is a particulate alkaline earth metal ion adsorbent having a large adsorption capacity. The particulate alkaline earth metal ion adsorbent comprising: a potassium hydrogen dititanate hydrate represented by a chemical formula K2-xHxO.2TiO2.nH2O, wherein x is 0.5 or more and 1.3 or less, and n is greater than 0; and no binder, wherein the particulate alkaline earth metal ion adsorbent has a particle size range of 150 ?m or more and 1000 ?m or less.

Abstract: A method of making a semiconductor device includes forming a first source/drain trench and a second source/drain trench over a first and second source/drain region, respectively; forming a first silicon dioxide layer in the first source/drain trench and a second silicon dioxide layer in the second source/drain trench; forming a first source/drain contact over the first source/drain region, the first source/drain contact including a first tri-layer contact disposed between the first silicon dioxide layer and a first conductive material; and forming a second source/drain contact over the second source/drain region, the second source/drain contact including a second tri-layer contact disposed between the second silicon dioxide layer and a second conductive material; wherein the first tri-layer contact includes a first metal oxide layer in contact with the first silicon dioxide layer, and the second tri-layer contact includes a second metal oxide layer in contact with the second silicon dioxide layer.

Abstract: A vehicle sensor unit includes a millimeter wave radar device, an infrared sensor that is arranged at a position adjacent to the millimeter wave radar device, and a cover having a first cover portion and a second cover portion. The first cover portion is located in front of the millimeter wave radar device in a transmission direction of the millimeter waves to conceal the millimeter wave radar device and has millimeter wave transparency. The second cover portion is located in front of the infrared sensor in a transmission direction of the infrared light to conceal the infrared sensor and has infrared light transparency. The millimeter wave radar device and the infrared sensor are attached to the cover so that the whole vehicle sensor unit is configured as a single unit.

Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with a second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate.

Abstract: The present invention relates to a sheen product including a base material and a metal film provided on the base material, in which the metal film includes: a first layer formed of a compound represented by a general formula SiXMYOZ (M represents a metal element, X>0, Y>0, Z?0, and X+Y+Z=100); a second layer formed of In: and a third layer formed of a compound represented by a general formula SiX?M?Y?OZ? (M? represents a metal element, X?>0, Y?>0, Z??0, and X?+Y?+Z?=100), and the metal film are obtained by sputtering the first layer, the second layer and the third layer in this order.

Abstract: There is provided a near-infrared sensor cover to be applied to a near-infrared sensor including a transmitting unit that transmits near-infrared radiation to outside of a vehicle and a receiving unit that receives near-infrared radiation reaching and reflected by an object outside the vehicle, and to cover the transmitting unit and the receiving unit. The near-infrared sensor cover includes a luster layer formed by dispersing a filler in a coating film, the filler including a core and a shell that covers the core with a material having a refractive index different from that of the core. Light transmittance of near-infrared radiation in the near-infrared sensor cover is 60% or more.

Abstract: There is provided a near-infrared sensor cover to be applied to a near-infrared sensor including a transmitting unit that transmits near-infrared radiation and a receiving unit that receives near-infrared radiation reflected by an object. The near-infrared sensor cover includes a cover main body portion disposed with a thickness direction thereof to be coincide with a transmission and reception direction of the near-infrared radiation and covering the transmitting unit and the receiving unit, and a heater wire disposed on the cover main body portion to generate heat when energized. The heater wire includes plural straight line portions that extend in parallel to each other and plural connection portions that connect end portions of adjacent straight line portions. An interval between adjacent straight line portions ranges from 3 mm to 10 mm, and a diameter of the heater wire ranges from 0.01 mm to 0.2 mm.

Abstract: A pointer includes: a pointer tip having a tip configured to point a position; a transmitter configured to emit a signal from the pointer tip; and a main body connected to the pointer tip. The main body includes: an exterior housing forming an exterior; a detector configured to detect displacement of the exterior housing and output a detection signal; and a controller configured to change an operation state of the pointer in accordance with the detection signal. The detector includes: a detection device provided on an inner surface of the exterior housing and configured to detect the displacement; and a signal outputter configured to output the detection signal in the case where the detection device detects the displacement.

Abstract: A device for detecting a holding state of an object. The device includes a housing for the object that has a shape that can be held by an operator and a piezoelectric sensor attached to the housing. Moreover, a detecting unit can detects a holding state of the housing by using a fluctuation amount of an output voltage of the piezoelectric sensor. The housing has a shape having a hollow space and the piezoelectric sensor has a flat film shape and is disposed in contact with an inner wall surface of the housing. The piezoelectric film produces charges when stretched and contracted in response to a displacement of the housing that are outputted as a voltage to the detecting unit. When detecting that the output voltage significantly fluctuates, the detecting unit identifies that the object is being held.

Abstract: An electronic device for a vehicle includes a substrate and a semiconductor package. The substrate is arranged to extend along a flowing path of wind produced by a fan unit. The semiconductor package is disposed on the substrate to be cooled by the wind. When an inflow port from which the wind is drawn by the fan unit is defined to include a flowing path having a first cross-section area, the semiconductor package is disposed in a space including a flowing path having a cross-section area that is larger than the first cross-section area.

Abstract: An electronic device for a vehicle includes a substrate and a semiconductor package. The substrate is arranged to extend along a flowing path of wind produced by a fan unit. The semiconductor package is disposed on the substrate to be cooled by the wind. When an inflow port from which the wind is drawn by the fan unit is defined to include a flowing path having a first cross-section area, the semiconductor package is disposed in a space including a flowing path having a cross-section area that is larger than the first cross-section area.

Abstract: A vehicular electronic device has a semiconductor package and a multilayer wiring board. An electrode pad of the multilayer wiring board, to which a signal terminal of the semiconductor package is soldered, has a wiring pattern in an inner layer of the multilayer wiring board. A solder resist is applied and spaced from a periphery of the electrode pad to the exterior. The signal terminal is soldered to the electrode pad to cover an upper surface and an upper end of a side surface of the electrode pad. As a result, a crack is less likely to occur in solder connected to the signal terminal. Therefore, the signal terminal can be electrically connected with high reliability even when the signal terminal is provided in the semiconductor package with a small number.

Abstract: A photovoltaic device and a method of making a photovoltaic device that includes a stack of layers, including a substrate and an electrode layer. The photovoltaic device includes a semiconductor light absorption layer that is formed on the stack by a coating liquid that includes a plurality of semiconducting particles. The coating liquid may also include a solvent and a plurality of additive molecules. The photovoltaic device also includes a transparent conducting layer disposed on the semiconductor light absorption layer and a grid electrode disposed on the transparent conducting layer.