Abstract: A photoelectric conversion device includes a first electrode, a second electrode facing the first electrode, and a photoelectric conversion layer located between the first electrode and the second electrode and including a bulk heterojunction layer containing a donor organic compound and an acceptor organic compound. The donor organic compound includes a first substituent. The acceptor organic compound includes an aromatic portion and a second substituent binding to the aromatic portion and having dipole-dipole interaction with the first substituent.

Abstract: An imaging device includes a photoelectric conversion element that includes a first electrode, a second electrode facing the first electrode, and a photoelectric conversion layer located between the first electrode and the second electrode; and a charge detection circuit that reads a charge generated in the photoelectric conversion element. The photoelectric conversion layer is a bulk heterojunction layer that contains a phthalocyanine derivative or a naphthalocyanine derivative and a fullerene polymer. In the fullerene polymer, a fullerene or a fullerene derivative is crosslinked by a crosslinking structure represented by general formula (1) below. In general formula (1), X is a bifunctional functional group.

Abstract: A camera system includes a light source having a peak emission wavelength at room temperature in a near-infrared region, and an imaging device including a photoelectric conversion element that converts near-infrared light into an electric charge. An external quantum efficiency of the photoelectric conversion element has a first peak at a first wavelength longer than the peak emission wavelength, and the external quantum efficiency at the first wavelength is higher than the external quantum efficiency at the peak emission wavelength.

Abstract: A photocurrent multiplication device having an external quantum efficiency of 100% or more includes at least one first electrode, at least one second electrode facing the at least one first electrode, and a photoelectric conversion film that is located between the at least one first electrode and the at least one second electrode and that includes a donor material and an acceptor material. The photoelectric conversion film at least partially has a sea-island structure in which the donor material is interspersed in the photoelectric conversion film.

Abstract: A camera system includes a light source having a peak emission wavelength at room temperature in a near-infrared region, and an imaging device including a photoelectric conversion element that converts near-infrared light into an electric charge. An external quantum efficiency of the photoelectric conversion element has a first peak at a first wavelength longer than the peak emission wavelength, and the external quantum efficiency at the first wavelength is higher than the external quantum efficiency at the peak emission wavelength.

Abstract: An imaging device includes a plurality of pixels and a voltage supply circuit. Each of the plurality of pixels includes: a pixel electrode; a counter electrode; a photoelectric conversion layer located between the pixel electrode and the counter electrode; and a charge blocking layer located between the pixel electrode and the photoelectric conversion layer. The charge blocking layer contains an impurity and has a first surface facing the photoelectric conversion layer and a second surface facing the pixel electrode. The concentration of the impurity on the first surface is higher than the concentration of the impurity on the second surface. The voltage supply circuit supplies a first voltage between the counter electrode and the pixel electrode in a first period and supplies a second voltage different from the first voltage between the counter electrode and the pixel electrode in a second period.

Abstract: An imaging apparatus includes a first electrode, a second electrode, and a photoelectric conversion layer located between the first electrode and the second electrode. The photoelectric conversion layer contains a first material, a second material, and a third material. The first material is a fullerene or a fullerene derivative. The second material is a donor-like organic semiconductor material. The average absorption coefficient in the visible light wavelength range of the third material is less than the average absorption coefficient in the visible light wavelength range of the first material.

Abstract: A semiconductor integrated circuit includes: a first circuit, a second circuit, a third circuit, and a first switch circuit. The first circuit is configured to output a first signal. The second circuit is configured to output a second signal different from the first signal. The third circuit is configured to output a third signal corresponding to either the first signal or the second signal. The first switch circuit is configured to output the third signal to the first circuit in a case that the first circuit outputs the first signal. The first switch circuit is configured to output the third signal to the second circuit in a case that the second circuit outputs the second signal.

Abstract: A photoelectric conversion element includes a first electrode, a second electrode, a photoelectric conversion layer positioned between the first electrode and the second electrode and including a donor semiconductor material and an acceptor semiconductor material, and a first charge blocking layer positioned between the first electrode and the photoelectric conversion layer. The first charge blocking layer includes a first material and a second material having an energy band gap narrower than that of the first material. The electron affinity of the first material is lower than that of the second material, and the ionization potential of the first material is higher than that of the second material.

Abstract: An imaging device includes pixels. Each of the pixels includes a first electrode, a second electrode, a photoelectric conversion layer that is located between the first electrode and the second electrode, that contains a donor semiconductor material and an acceptor semiconductor material, and that generates a pair of an electron and a hole, a first charge blocking layer located between the first electrode and the photoelectric conversion layer, a second charge blocking layer located between the second electrode and the photoelectric conversion layer, and a charge storage region that is electrically connected to the second electrode and that stores the hole. The difference between the electron affinity of the acceptor semiconductor material and the electron affinity of the first charge blocking layer is larger than the difference between the ionization potential of the donor semiconductor material and the ionization potential of the second charge blocking layer.

Abstract: A camera system includes a light source having a peak emission wavelength at room temperature in a near-infrared region, and an imaging device including a photoelectric conversion element that converts near-infrared light into an electric charge. An external quantum efficiency of the photoelectric conversion element has a first peak at a first wavelength longer than the peak emission wavelength, and the external quantum efficiency at the first wavelength is higher than the external quantum efficiency at the peak emission wavelength.

Abstract: A composition contains a phthalocyanine derivative represented by the following formula: where R1 to R8 are independently an alkyl group, M is Si, each of R9 and R10 is any one of substituents represented by the following formulas, R11 to R13 are independently an alkyl group, and R14 to R18 are independently an alkyl group or an aryl group:

Abstract: A semiconductor integrated circuit includes: a first circuit, a second circuit, a third circuit, and a first switch circuit. The first circuit is configured to output a first signal. The second circuit is configured to output a second signal different from the first signal. The third circuit is configured to output a third signal corresponding to either the first signal or the second signal. The first switch circuit is configured to output the third signal to the first circuit in a case that the first circuit outputs the first signal. The first switch circuit is configured to output the third signal to the second circuit in a case that the second circuit outputs the second signal.

Abstract: An optical sensor includes a substrate, a photoelectric conversion layer, a first electrode, and a second electrode. The photoelectric conversion layer has a first surface facing the substrate, a second surface located opposite the first surface, and at least one side surface connecting the first surface with the second surface. The photoelectric conversion layer is supported by the substrate. The first electrode includes a first portion and a second portion separated from the first portion. The second portion is closer to the second surface than the first portion is. The first electrode is provided on the at least one side surface. The second electrode is provided on the at least one side surface.

Abstract: According to one embodiment, a semiconductor integrated circuit includes a first circuit, a second circuit, a third circuit, and a switch circuit. The second circuit is different from the first circuit. The third circuit is configured to adjust a timing of an edge of a signal. The switch circuit is configured to connect the third circuit to the first circuit in a case where a first signal is output from the first circuit to an outside of the semiconductor integrated circuit, and configured to connect the third circuit to the second circuit in a case where a second signal is output from the second circuit to the outside, the second signal being different from the first signal.

Abstract: A composition contains a naphthalocyanine derivative represented by the following formula: where R1 to R8 are each independently an alkyl group, and R9 and R10 are each independently an aryl group.

Abstract: An imaging device includes a semiconductor substrate, a first pixel, and second pixels adjacent to the first pixel. Each of the first pixel and the second pixels includes a first photoelectric conversion layer, a first pixel electrode, a first plug that electrically connects the semiconductor substrate and the first pixel electrode, a second photoelectric conversion layer, a second pixel electrode, and a second plug that electrically connects the semiconductor substrate and the second pixel electrode. When the imaging device is viewed in a normal direction of the semiconductor substrate, a smallest distance of distances between the first plug in the first pixel and the first plugs in the respective second pixels is smaller than a smallest distance of distances between the first plug in the first pixel and the second plugs in the first pixel and the respective second pixels.

Abstract: An imaging apparatus includes a semiconductor substrate; a first electrode; a second electrode; a photoelectric conversion layer disposed between the first electrode and the second electrode, and including a donor organic semiconductor material and an acceptor organic semiconductor material; a charge accumulation node positioned within the semiconductor substrate and electrically connected to the second electrode; and a first blocking layer disposed between the first electrode and the photoelectric conversion layer. The photoelectric conversion layer has an ionization potential of lower than or equal to 5.3 eV. The first blocking layer has an electron affinity lower than an electron affinity of the acceptor organic semiconductor material included in the photoelectric conversion layer. The imaging apparatus has spectral sensitivity in a near-infrared light region having wavelengths of greater than or equal to 650 nm and less than or equal to 3000 nm.

Abstract: An imaging apparatus includes a first electrode, a second electrode, and a photoelectric conversion layer located between the first electrode and the second electrode. The photoelectric conversion layer contains a first material, a second material, and a third material. The first material is a fullerene or a fullerene derivative. The second material is a donor-like organic semiconductor material. The average absorption coefficient in the visible light wavelength range of the third material is less than the average absorption coefficient in the visible light wavelength range of the first material.

Abstract: According to one embodiment, a semiconductor integrated circuit includes a first circuit, a second circuit, a third circuit, and a switch circuit. The second circuit is different from the first circuit. The third circuit is configured to adjust a timing of an edge of a signal. The switch circuit is configured to connect the third circuit to the first circuit in a case where a first signal is output from the first circuit to an outside of the semiconductor integrated circuit, and configured to connect the third circuit to the second circuit in a case where a second signal is output from the second circuit to the outside, the second signal being different from the first signal.