Patents by Inventor Hiroaki Ishiwata

Hiroaki Ishiwata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200295067
    Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
    Type: Application
    Filed: June 2, 2020
    Publication date: September 17, 2020
    Applicant: Sony Semiconductor Solutions Corporation
    Inventors: Hiroaki Ishiwata, Sanghoon Ha
  • Patent number: 10770495
    Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
    Type: Grant
    Filed: June 2, 2020
    Date of Patent: September 8, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Hiroaki Ishiwata, Sanghoon Ha
  • Patent number: 10720458
    Abstract: A solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels includes: a plurality of photoelectric conversion portions; a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates, wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: July 21, 2020
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Hiroaki Ishiwata
  • Patent number: 10692909
    Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: June 23, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Hiroaki Ishiwata, Sanghoon Ha
  • Publication number: 20200185442
    Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
    Type: Application
    Filed: February 14, 2020
    Publication date: June 11, 2020
    Applicant: Sony Semiconductor Solutions Corporation
    Inventors: Hiroaki Ishiwata, Sanghoon Ha
  • Publication number: 20200168647
    Abstract: A solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels includes: a plurality of photoelectric conversion portions; a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates, wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.
    Type: Application
    Filed: January 31, 2020
    Publication date: May 28, 2020
    Applicant: Sony Semiconductor Solutions Corporation
    Inventor: Hiroaki Ishiwata
  • Publication number: 20200161347
    Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with a second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate.
    Type: Application
    Filed: November 19, 2019
    Publication date: May 21, 2020
    Applicant: SONY CORPORATION
    Inventors: Hiroaki ISHIWATA, Harumi TANAKA, Atsuhiro ANDO
  • Patent number: 10659708
    Abstract: A solid-state imaging device includes a pixel array unit in which a plurality of imaging pixels configured to generate an image, and a plurality of phase difference detection pixels configured to perform phase difference detection are arranged, each of the plurality of phase difference detection pixels including a plurality of photoelectric conversion units, a plurality of floating diffusions configured to convert charges stored in the plurality of photoelectric conversion units into voltage, and a plurality of amplification transistors configured to amplify the converted voltage in the plurality of floating diffusions.
    Type: Grant
    Filed: January 24, 2018
    Date of Patent: May 19, 2020
    Assignee: Sony Corporation
    Inventors: Hiroaki Ishiwata, Hideo Kido, Norihiro Kubo, Tetsuya Uchida
  • Publication number: 20200068159
    Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus that realize a high frame rate image capture without deteriorating an image quality. A floating diffusion holds a charge accumulated on one or more photoelectric conversion units. A plurality of amplification transistors read out a signal corresponding to the charge held by the floating diffusion. The signal read out by the amplification transistor is output to a vertical signal line. The plurality of amplification transistors are connected in parallel. The present technology is applicable to a CMOS image sensor, for example.
    Type: Application
    Filed: November 1, 2019
    Publication date: February 27, 2020
    Inventor: HIROAKI ISHIWATA
  • Patent number: 10529752
    Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with a second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: January 7, 2020
    Assignee: Sony Corporation
    Inventors: Hiroaki Ishiwata, Harumi Tanaka, Atsuhiro Ando
  • Patent number: 10491848
    Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus that realize a high frame rate image capture without deteriorating an image quality. A floating diffusion holds a charge accumulated on one or more photoelectric conversion units. A plurality of amplification transistors read out a signal corresponding to the charge held by the floating diffusion. The signal read out by the amplification transistor is output to a vertical signal line. The plurality of amplification transistors are connected in parallel. The present technology is applicable to a CMOS image sensor, for example.
    Type: Grant
    Filed: December 4, 2018
    Date of Patent: November 26, 2019
    Assignee: SONY CORPORATION
    Inventor: Hiroaki Ishiwata
  • Patent number: 10355037
    Abstract: A solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels includes: a plurality of photoelectric conversion portions; a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates, wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: July 16, 2019
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Hiroaki Ishiwata
  • Patent number: 10325954
    Abstract: A solid-state imaging device includes pixels each of which has a photoelectric conversion portion that senses light and converts the sensed light into a charge; and an amplifying portion which is shared by a predetermined number of the pixels, amplifies the generated charge in the photoelectric conversion portion, and outputs a level of signal corresponding to the charge, wherein the a predetermined number of the pixels which share the amplifying portion are arranged in a first direction extending along a signal line via which the amplifying portion outputs the signal, and wherein a length of an area where the amplifying portion is formed along a second direction substantially intersecting the first direction is set to be equal to or more than a length of one pixel and to be less than a length of two pixels in the second direction.
    Type: Grant
    Filed: February 8, 2016
    Date of Patent: June 18, 2019
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Hiroaki Ishiwata
  • Publication number: 20190110014
    Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus that realize a high frame rate image capture without deteriorating an image quality. A floating diffusion holds a charge accumulated on one or more photoelectric conversion units. A plurality of amplification transistors read out a signal corresponding to the charge held by the floating diffusion. The signal read out by the amplification transistor is output to a vertical signal line. The plurality of amplification transistors are connected in parallel. The present technology is applicable to a CMOS image sensor, for example.
    Type: Application
    Filed: December 4, 2018
    Publication date: April 11, 2019
    Inventor: HIROAKI ISHIWATA
  • Patent number: 10249663
    Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: April 2, 2019
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Hiroaki Ishiwata, Sanghoon Ha
  • Publication number: 20190096936
    Abstract: A solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels includes: a plurality of photoelectric conversion portions; a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates, wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.
    Type: Application
    Filed: November 29, 2018
    Publication date: March 28, 2019
    Applicant: Sony Semiconductor Solutions Corporation
    Inventor: Hiroaki Ishiwata
  • Publication number: 20190096935
    Abstract: A solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels includes: a plurality of photoelectric conversion portions; a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates, wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.
    Type: Application
    Filed: November 29, 2018
    Publication date: March 28, 2019
    Applicant: Sony Semiconductor Solutions Corporation
    Inventor: Hiroaki Ishiwata
  • Publication number: 20190096940
    Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
    Type: Application
    Filed: November 29, 2018
    Publication date: March 28, 2019
    Applicant: Sony Semiconductor Solutions Corporation
    Inventors: Hiroaki Ishiwata, Sanghoon Ha
  • Publication number: 20190057989
    Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with a second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate.
    Type: Application
    Filed: March 10, 2017
    Publication date: February 21, 2019
    Applicant: SONY CORPORATION
    Inventors: Hiroaki ISHIWATA, Harumi TANAKA, Atsuhiro ANDO
  • Patent number: 10212376
    Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus that realize a high frame rate image capture without deteriorating an image quality. A floating diffusion holds a charge accumulated on one or more photoelectric conversion units. A plurality of amplification transistors read out a signal corresponding to the charge held by the floating diffusion. The signal read out by the amplification transistor is output to a vertical signal line. The plurality of amplification transistors are connected in parallel. The present technology is applicable to a CMOS image sensor, for example.
    Type: Grant
    Filed: May 7, 2018
    Date of Patent: February 19, 2019
    Assignee: SONY CORPORATION
    Inventor: Hiroaki Ishiwata