Abstract: A solid-state imaging device includes a pixel array unit in which a plurality of imaging pixels configured to generate an image, and a plurality of phase difference detection pixels configured to perform phase difference detection are arranged, each of the plurality of phase difference detection pixels including a plurality of photoelectric conversion units, a plurality of floating diffusions configured to convert charges stored in the plurality of photoelectric conversion units into voltage, and a plurality of amplification transistors configured to amplify the converted voltage in the plurality of floating diffusions.

Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus that realize a high frame rate image capture without deteriorating an image quality. A floating diffusion holds a charge accumulated on one or more photoelectric conversion units. A plurality of amplification transistors read out a signal corresponding to the charge held by the floating diffusion. The signal read out by the amplification transistor is output to a vertical signal line. The plurality of amplification transistors are connected in parallel. The present technology is applicable to a CMOS image sensor, for example.

Abstract: A solid-state imaging element, a driving method therefor, and an electronic apparatus, by which the characteristics of phase-difference pixels can be made constant irrespective of a chip position are provided. In a pixel array section, a normal pixel including a photodiode (PD) that receives and photoelectrically converts incident light such that a color component signal is obtained, and a phase-difference pixel including a pair of a photodiode (PD1) and a photodiode (PD2) including light-receiving surfaces having a size depending on an image height such that a phase difference detection signal is obtained are arranged in a matrix form. The pair of the photodiode (PD1) and the photodiode (PD2) each include a first region serving as a charge accumulation main part and a second region that performs photoelectric conversion and contributes to charge transfer to the main part. The present technology is applicable to a CMOS image sensor, for example.

Abstract: A solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels includes: a plurality of photoelectric conversion portions; a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates, wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.

Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

Abstract: A solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels includes: a plurality of photoelectric conversion portions; a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates, wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.

Abstract: A solid-state imaging device includes a pixel array unit in which a plurality of imaging pixels configured to generate an image, and a plurality of phase difference detection pixels configured to perform phase difference detection are arranged, each of the plurality of phase difference detection pixels including a plurality of photoelectric conversion units, a plurality of floating diffusions configured to convert charges stored in the plurality of photoelectric conversion units into voltage, and a plurality of amplification transistors configured to amplify the converted voltage in the plurality of floating diffusions.

Abstract: A solid-state image pickup unit includes substrate; a red pixel including a red charge storage section; a blue pixel including a blue charge storage section; and a green pixel including a plurality of green charge storage sections, the red charge storage section and the blue charge storage section being provided in the substrate. Then, the plurality of green charge storage sections are arranged in the substrate along a thickness direction of the substrate.

Abstract: There is provided a solid-state imaging device which includes a focus detection pixel that has a light shielding film, which is formed on a light receiving surface of a photoelectric conversion portion and shields light in a part of the light receiving surface, performs pupil division and photoelectric conversion of a received light flux and acquires a phase difference detection signal, where the light shielding film is formed avoiding a gate electrode of a reading gate portion to read a signal charge from the photoelectric conversion portion.

Abstract: A solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels includes: a plurality of photoelectric conversion portions; a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates, wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.

Abstract: Provided is a solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels includes: a plurality of photoelectric conversion portions; a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates, wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.

Abstract: A solid-state imaging element, a driving method therefor, and an electronic apparatus, by which the characteristics of phase-difference pixels can be made constant irrespective of a chip position are provided. In a pixel array section, a normal pixel including a photodiode (PD) that receives and photoelectrically converts incident light such that a color component signal is obtained, and a phase-difference pixel including a pair of a photodiode (PD1) and a photodiode (PD2) including light-receiving surfaces having a size depending on an image height such that a phase difference detection signal is obtained are arranged in a matrix form. The pair of the photodiode (PD1) and the photodiode (PD2) each include a first region serving as a charge accumulation main part and a second region that performs photoelectric conversion and contributes to charge transfer to the main part. The present technology is applicable to a CMOS image sensor, for example.

Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

Abstract: A solid-state imaging device includes pixels each of which has a photoelectric conversion portion that senses light and converts the sensed light into a charge; and an amplifying portion which is shared by a predetermined number of the pixels, amplifies the generated charge in the photoelectric conversion portion, and outputs a level of signal corresponding to the charge, wherein the a predetermined number of the pixels which share the amplifying portion are arranged in a first direction extending along a signal line via which the amplifying portion outputs the signal, and wherein a length of an area where the amplifying portion is formed along a second direction substantially intersecting the first direction is set to be equal to or more than a length of one pixel and to be less than a length of two pixels in the second direction.

Abstract: A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.

Abstract: A solid-state image pickup unit includes substrate; a red pixel including a red charge storage section; a blue pixel including a blue charge storage section; and a green pixel including a plurality of green charge storage sections, the red charge storage section and the blue charge storage section being provided in the substrate. Then, the plurality of green charge storage sections are arranged in the substrate along a thickness direction of the substrate.

Abstract: A solid-state imaging device includes pixels each of which has a photoelectric conversion portion that senses light and converts the sensed light into a charge; and an amplifying portion which is shared by a predetermined number of the pixels, amplifies the generated charge in the photoelectric conversion portion, and outputs a level of signal corresponding to the charge, wherein the a predetermined number of the pixels which share the amplifying portion are arranged in a first direction extending along a signal line via which the amplifying portion outputs the signal, and wherein a length of an area where the amplifying portion is formed along a second direction substantially intersecting the first direction is set to be equal to or more than a length of one pixel and to be less than a length of two pixels in the second direction.

Abstract: There is provided a solid-state imaging device which includes a focus detection pixel that has a light shielding film, which is formed on a light receiving surface of a photoelectric conversion portion and shields light in a part of the light receiving surface, performs pupil division and photoelectric conversion of a received light flux and acquires a phase difference detection signal, where the light shielding film is formed avoiding a gate electrode of a reading gate portion to read a signal charge from the photoelectric conversion portion.

Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.