Abstract: A semiconductor device includes a molded body and an interconnection layer. The molded body includes a semiconductor chip, at least one terminal body disposed around the semiconductor chip and a resin member provided between the semiconductor chip and the terminal body. The molded body has a first surface, a second surface opposite to the first surface and a side surface connected to the first and second surfaces. The interconnection layer is provided on the first surface of the molded body. The interconnection layer includes an interconnect electrically connecting the semiconductor chip and the terminal body. The terminal body has first and second contact surfaces. The first contact surface is exposed at the first or second surface of the molded body. The second contact surface is connected to the first contact surface and exposed at the side surface of the molded body.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor chip, a heat dissipation member provided on one surface of the first semiconductor chip and connected to the first semiconductor chip, and a sealing resin sealing the first semiconductor chip and the heat dissipation member. The heat dissipation member includes mutually interlaced metal fibers and a thermosetting resin.

Abstract: A method for manufacturing a die attach film includes forming a plurality of posts on a support sheet. The method includes forming an adhesive layer between the posts. A thermal conductivity of the adhesive layer is lower than a thermal conductivity of the posts. The method includes removing the support sheet.

Abstract: A semiconductor device includes a molded body and an interconnection layer. The molded body includes a semiconductor chip, at least one terminal body disposed around the semiconductor chip and a resin member provided between the semiconductor chip and the terminal body. The molded body has a first surface, a second surface opposite to the first surface and a side surface connected to the first and second surfaces. The interconnection layer is provided on the first surface of the molded body. The interconnection layer includes an interconnect electrically connecting the semiconductor chip and the terminal body. The terminal body has first and second contact surfaces. The first contact surface is exposed at the first or second surface of the molded body. The second contact surface is connected to the first contact surface and exposed at the side surface of the molded body.

Abstract: A semiconductor device that includes a first die pad, an adhesive, and a second die pad fixed to the top surface of the first die pad via the adhesive. The second die pad includes a body portion and a protrusion portion provided on a side surface of the body portion. A semiconductor chip is fixed to a top surface of the second die pad, and a lead is electrically connected to the semiconductor chip. The semiconductor device further includes a package material that covers the first die pad, the second die pad, the semiconductor chip, and the lead. The first die pad is substantially as thick as the lead.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor chip, a heat dissipation member provided on one surface of the first semiconductor chip and connected to the first semiconductor chip, and a sealing resin sealing the first semiconductor chip and the heat dissipation member. The heat dissipation member includes mutually interlaced metal fibers and a thermosetting resin.

Abstract: A semiconductor package comprises a resin material, a semiconductor chip in the resin material, and a metal member in the resin material. The metal member has a first surface that faces the semiconductor chip and a second surface that is opposed to the first surface. The first surface of the metal member has a plurality of first recess portions formed thereon. The first recess portions extend into the metal member and have an opening width that is less than a bottom width.

Abstract: According to one embodiment, a semiconductor module includes a first semiconductor element, a second semiconductor element, a first light emitting element and a second light emitting element. The first semiconductor element is provided with a first light receiving circuit and a first output circuit. The second semiconductor element is provided with a second light receiving circuit and a second output circuit. The first light emitting element is electrically connected to the second output circuit and mounted on the first semiconductor element such that first light emitted from the first light emitting element is received by the first light receiving circuit. The second light emitting element is electrically connected to the first output circuit and mounted on the second semiconductor element such that second light emitted from the second light emitting element is received by the second light receiving circuit.

Abstract: A semiconductor device that includes a first die pad, an adhesive, and a second die pad fixed to the top surface of the first die pad via the adhesive. The second die pad includes a body portion and a protrusion portion provided on a side surface of the body portion. A semiconductor chip is fixed to a top surface of the second die pad, and a lead is electrically connected to the semiconductor chip. The semiconductor device further includes a package material that covers the first die pad, the second die pad, the semiconductor chip, and the lead. The first die pad is substantially as thick as the lead.

Abstract: A semiconductor device that includes a first die pad, an adhesive, and a second die pad fixed to the top surface of the first die pad via the adhesive. The second die pad includes a body portion and a protrusion portion provided on a side surface of the body portion. A semiconductor chip is fixed to a top surface of the second die pad, and a lead is electrically connected to the semiconductor chip. The semiconductor device further includes a package material that covers the first die pad, the second die pad, the semiconductor chip, and the lead. The first die pad is substantially as thick as the lead.

Abstract: Provided is a laser beam welding apparatus capable of correctly detecting the beginning and the end of one welding point even in remote laser beam welding. The laser beam welding apparatus includes a head which irradiates a workpiece with a laser beam, an optical receiver which receives a reflected light of the laser beam from the workpiece, and a controller. The optical receiver receives only a laser beam and a plasma of the reflected light. The controller determines that one welding point begins when a time during which intensity of the reflected light is larger than or equal to a second set-intensity is longer than or equal to a first set-time, and determines that the one welding point ends when a time during which the intensity of the reflected light is smaller than or equal to a first set-intensity is longer than or equal to a second set-time.

Abstract: A welded portion inspection method accurately identifies emitted light from a molten portion during inspection laser light irradiation, enabling reliable inspection. When transitioning from welding laser light irradiation to inspection laser light irradiation, the welding laser light irradiation is interrupted and then the welding laser light is switched to the inspection laser light. In inspecting a welded portion, two points in time at which the emitted light intensity is equal to or less than a certain threshold value are extracted from an intensity waveform of the emitted light as an inspection start point in time and an inspection end point in time. The interval between the inspection start and end points is estimated as being a irradiation period of the inspection laser light. The welded state is inspected based on the intensity waveform of the emitted light in the irradiation period.

Abstract: A semiconductor package comprises a resin material, a semiconductor chip in the resin material, and a metal member in the resin material. The metal member has a first surface that faces the semiconductor chip and a second surface that is opposed to the first surface. The first surface of the metal member has a plurality of first recess portions formed thereon. The first recess portions extend into the metal member and have an opening width that is less than a bottom width.

Abstract: A laser welding method is capable of easily restraining poor welding when spatters adhere to a protective glass of an optical system. The laser welding method includes a step of calculating a decrease-amount of the laser power before laser welding is performed by irradiating a welding portion of a workpiece with the laser beam having a predetermined power. The step of calculating the decrease-amount includes irradiating the welding portion with an inspecting laser beam having a power smaller than the predetermined power, receiving a return beam of the inspecting laser beam, measuring an intensity of the return beam, and comparing the intensity of the return beam with a standard intensity to calculate an amount of decrease in power of the inspecting laser beam at the welding portion.

Abstract: A semiconductor device that includes a first die pad, an adhesive, and a second die pad fixed to the top surface of the first die pad via the adhesive. The second die pad includes a body portion and a protrusion portion provided on a side surface of the body portion. A semiconductor chip is fixed to a top surface of the second die pad, and a lead is electrically connected to the semiconductor chip. The semiconductor device further includes a package material that covers the first die pad, the second die pad, the semiconductor chip, and the lead. The first die pad is substantially as thick as the lead.

Abstract: According to one embodiment, a semiconductor module includes a first semiconductor element, a second semiconductor element, a first light emitting element and a second light emitting element. The first semiconductor element is provided with a first light receiving circuit and a first output circuit. The second semiconductor element is provided with a second light receiving circuit and a second output circuit. The first light emitting element is electrically connected to the second output circuit and mounted on the first semiconductor element such that first light emitted from the first light emitting element is received by the first light receiving circuit. The second light emitting element is electrically connected to the first output circuit and mounted on the second semiconductor element such that second light emitted from the second light emitting element is received by the second light receiving circuit.

Abstract: According to one embodiment, a semiconductor module includes a first semiconductor element, a second semiconductor element, a first light emitting element and a second light emitting element. The first semiconductor element is provided with a first light receiving circuit and a first output circuit. The second semiconductor element is provided with a second light receiving circuit and a second output circuit. The first light emitting element is electrically connected to the second output circuit and mounted on the first semiconductor element such that first light emitted from the first light emitting element is received by the first light receiving circuit. The second light emitting element is electrically connected to the first output circuit and mounted on the second semiconductor element such that second light emitted from the second light emitting element is received by the second light receiving circuit.

Abstract: Provided is a laser welding inspection apparatus capable of improving the accuracy for determining the welding defect. The laser welding inspection apparatus includes a head which irradiates a welded portion of a workpiece with a laser beam for inspection, an optical receiver which receives a return light of the laser beam for inspection from the welded portion, an optical system which adjusts at least a focal diameter of the laser beam for inspection applied to the welded portion and a region where the return light from the welded portion is recognized, and a controller which controls the optical system and determines, based on intensity of the return light, whether a welding defect exists in the welded portion. The controller controls the optical system so that a diameter of the region is not more than 1.5 times as large as the focal diameter.

Abstract: A welding laser beam (L1) is radiated along welding loci (C11, C12) set in workpieces (W1, W2), or an inspection laser beam (L5) is radiated along scanning loci (C51, C52) set in a molten pool (Y1) of the workpieces that are molten by radiation of the welding laser beam, a returned light beam (L2) including reflection light from the molten pool, vapor light caused due to melting and evaporation of the workpieces, and thermal radiation light emitted from the molten pool is received, and a welding state of a welded portion of the workpieces is inspected based on an intensity of a returned light beam received in a first region inside the molten pool which is relatively close to a given point and an intensity of a returned light beam received in a second region inside the molten pool which is relatively spaced from the given point.

Abstract: A semiconductor device package which decrease deterioration on characteristics of the chip is provided. The semiconductor device package includes a chip having a plurality of electrodes and a circuit, each of the electrodes provided on a first surface of the chip, the circuit being connected to the electrodes, a resin member provided on the first surface of the chip, and an encapsulating member encapsulating the chip and the resin member. Elastic modulus of the resin member is set in a prescribed range such that drift of an output voltage of the circuit is in a range within not less than 0.0 mV and not more than 1.5 mV.