Abstract: A light emitting element of a face-up type using a group III nitride semiconductor emits light with wavelengths of 210 to 300 nm. The light emitting element has an n-type layer, an active layer provided on the n-type layer, a p-type layer provided on the active layer, an n-side electrode provided on the n-type layer and having a comb shape, a p-side contact electrode provided on and in contact with the p-type layer and transmitting light of the wavelength, and a p-side electrode provided on the p-side contact electrode and having a comb shape. The p-side electrode has p-side extending portions extending in a direction. The n-side electrode has n-side extending portions extending in the direction, each n-side extending portion being disposed between the p-side extending portions adjacent to the n-side extending portion. A distance between the p-side extending portion and the n-side extending portion is 140 ?m or less.

Abstract: A light emitting element with improved light output and lifetime. The light emitting element using a group III nitride semiconductor containing Al and having an emission wavelength of 200 to 280 nm includes a substrate, a semiconductor layer formed of an n n-type layer, a light emitting layer, and a p-type layer deposited in this order on the substrate, a hole formed in a predetermined region on the surface of the p-type layer and having a depth reaching the n-type layer, a p-electrode formed on and in contact with the p-type layer and having a reflectance of 50% or more for ultraviolet light with an emission wavelength, and an n-electrode formed on or above the n-type layer exposed at the bottom of the hole. The hole and the n-electrode have a pattern with a plurality of dots arranged two-dimensionally, and the area of the p-electrode is 0.75 mm2 or more.

Abstract: The present disclosure provides a face-up type ultraviolet light emitting device capable of improving the light extraction efficiency. The face-up type ultraviolet light emitting device includes an n-type layer made of n-type group III nitride semiconductor, an active layer formed on the n-type layer and made of group III nitride semiconductor, a p-type layer formed on the active layer 22 and made of p-type group III nitride semiconductor, a p-side electrode formed on one part on the p-type layer, an insulating anti-reflective layer formed on other part on the p-type layer, made of a material having insulating properties, and preventing reflection of ultraviolet light with an emission wavelength.

Abstract: A light emitting device includes: a light emitting element containing a group III nitride and configured to emit ultraviolet light; and a bonding wire electrically connected to the light emitting element, and the bonding wire contains at least one selected from the group consisting of: an alloy containing Al as a main component and containing Cu; an alloy containing Mg as a main component and containing Cu; Mg; and an alloy containing Mg, or includes a first layer containing Cu or an alloy containing Cu, and a second layer containing one selected from the group consisting of: Al; an alloy containing Al; Mg; and an alloy containing Mg.

Abstract: The present disclosure provides a light emitting device in which the ultraviolet reflectance can be improved while the p-side electrode can form ohmic contact with the p-type layer. A flip-chip type ultraviolet light emitting device includes an n-type layer, an active layer, a p-type layer, a p-side electrode formed on the p-type layer, including a layer in contact with the p-type layer and made of Ru, Rh, or an alloy containing those metals as a main component, and having a thickness that transmits ultraviolet light with an emission wavelength, an insulating DBR layer formed on and in contact with a part of the p-side electrode, and reflecting ultraviolet light with an emission wavelength, a second p-side electrode being electrically connected with the p-side electrode through a hole formed in a region on the p-side electrode of the DBR layer.

Abstract: According to one embodiment, a stator includes a stator core with slots, and multi-phase segment coils each including coil segments each including a first linear part and a second linear part arranged in different slots and a bridge part, the coil segment formed of a rectangular conductor. An innermost coil segment in the slot is structured with divided segments adhered together. Each divided segment includes a first linear part and a second linear part, and a bridge part, and is formed of a rectangular conductor cross-sectional area of which is smaller than the rectangular conductor of other coil segments. The bridge parts of the divided segments are arranged to cross each other in the radial direction.

Abstract: A flip-chip type light emitting element of ultraviolet light emission includes: a p-type layer containing a p-type group III nitride semiconductor, and a p-side electrode serving as a reflective electrode provided over the p-type layer, and the p-side electrode contains Mg or an alloy containing Mg as a main component and is in contact with the p-type layer.

Abstract: In an air conditioning apparatus, heat exchange is conducted between refrigerant passing through a first high-temperature-side flow path and refrigerant passing through a first low-temperature-side flow path of a cooler, and between refrigerant passing through a second high-temperature-side flow path and refrigerant passing through a second low-temperature-side flow path of the cooler. A switching device switches between first/second refrigerant circuits. In the first circuit, an inlet of the first high-temperature-side flow path is formed downstream of the first low-temperature-side flow path with respect to an outlet of the first high-temperature-side flow path, and in the second refrigerant circuit, an inlet of the second high-temperature-side flow path is formed downstream of the second low-temperature-side flow path with respect to an outlet of the second high-temperature-side flow path.

Abstract: An automated guided vehicle includes a roll holder to hold a roll, a detector to acquire information on a roll holder passage region, including positions through which the roll holder passes when the automated guided vehicle travels, an illuminator to emit illumination light towards the roll holder passage region, and a traveler to travel and support the roll holder, the detector, and the illuminator.

Abstract: A winding core holder includes a holder main body, a lifter to raise and lower the holder main body, and a roller movably held relative to the holder main body, enabling the winding core to be placed and moved in the winding core axial direction. The roller includes a high-release surface with a higher release property than a surface of the holder main body.

Abstract: According to one embodiment, a rotor includes a rotor core including magnetic poles arranged in a circumferential direction around a central axis, each magnetic pole including at least two magnet holding slots opposed to each other at intervals in the circumferential direction, a first core portion between the two magnet holding slots, a second core portion between the two magnet holding slots and the central axis, and a bridge connecting the first core portion and the second core portion, and permanent magnets each arranged in the magnet holding slot. The bridge includes first center bridges located between the two magnet holding slots and separated from each other in the circumferential direction, and a coupling element that connects the first center bridges to each other.

Abstract: A method for producing a light emitting element, includes: stacking an n layer, a light emitting layer, and a p layer in this order, on a substrate; forming a hole having a depth reaching the n layer at a predetermined region of a surface of the p layer; forming, over the p layer, a p electrode having a Ru layer in contact with the p layer; forming an n electrode as defined herein; and performing a heat treatment as defined herein to reduce a contact resistance of the p electrode and the n electrode and to activate a p-type impurity in the p layer, and a pattern of the hole and a pattern of the p electrode are set such that a proportion of an area of the p electrode to a total area of the hole and the p layer is 70% or more.

Abstract: In a refrigeration and air-conditioning apparatus, an inner diameter of an upward-flow pipe is defined as an inner pipe diameter, where a spherical droplet of refrigerating machine oil with a diameter equal to the inner pipe diameter is defined as a spherical refrigerating machine oil droplet, and where a force received by the spherical refrigerating machine oil droplet from refrigerant in liquid form flowing upward through the upward-flow pipe is defined as a fluid force, the refrigerant in liquid form flows upward through the upward-flow pipe at such a speed that the fluid force is greater than a gravitational force applied to the spherical refrigerating machine oil droplet.

Abstract: A light emitting element includes a group III nitride semiconductor with an emission wavelength of 200 nm or more and 280 nm or less, the light emitting element includes: a semiconductor layer in which an n layer, a light emitting layer, and a p layer are provided in this order; and a p-electrode provided on and in contact with the p layer, and the p-electrode includes a contact layer that is provided in contact with the p layer, has a thickness of 0.5 nm or more and 6 nm or less, and contains Ru or Ni/Au, and a reflection layer that is provided in contact with the contact layer, has a thickness of 50 nm or more, and contains Al or an alloy mainly containing Al.

Abstract: A light emitting element having an emission wavelength of 200 nm or more and 280 nm or less and including a group-III nitride semiconductor, which includes a substrate, an antireflection film provided on a backside of the substrate, a semiconductor layer including an n-type layer, a light emitting layer, and a p-type layer; a hole provided in a predetermined region of a surface of the p-type layer, a first p-electrode provided on the p-type layer, a first n-electrode provided on the n-type layer, a second p-electrode provided on the first p-electrode, a second n-electrode provided on the first n-electrode, and a protective film covering an entire upper surface of the element. The protective film includes: a first protective film made of an insulating material and a second protective film made of an insulating material having an internal stress other than that of the insulating material of the first protective film.

Abstract: A light emitting element having an emission wavelength of 200 to 280 nm and including a group-III nitride semiconductor containing Al. The element includes a p-electrode provided on the p-type layer in contact therewith, including a Ru layer, an n-electrode provided on the n-type layer exposed at a bottom of a hole, and a protective film covering an entire upper surface of the element and including a first protective film made of SiO2 and a second protective film made of SiN which are laminated in sequence.

Abstract: A heat exchanger includes a plurality of fins and a plurality of tubes that are inserted into the fins and that allow refrigerant to flow in the tubes. The tubes include first heat transfer tubes and second heat transfer tubes. Each of the first heat transfer tubes includes grooves formed in an inner surface of the first heat transfer tube, and has an inside diameter Da and a groove depth Ta. Each of the second heat transfer tubes has an inner surface smoothed, has an inside diameter Db, and is connected to an associated one of the first heat transfer tubes. Da?2×Ta?Db is satisfied.

Abstract: According to one embodiment, a first permanent magnet and a second permanent magnet are disposed in each magnetic pole of a rotor core. When angular coordinates of intersections of a flux line in a d-axial direction passing an outer end A1 of the first permanent magnet, a flux line in the d-axial direction passing through an inner end A2 of the first permanent magnet, a flux line in the d-axial direction passing an outer end B1 of the second permanent magnet, a flux line in the d-axial direction passing an inner end B2 of the second permanent magnet and a circumscribing circle of the rotor core are respectively defined as ?dA1, ?dA2, ?dB1 and ?dB2, the ?dA1, ?dA2, ?dB1 and ?dB2 satisfy a formula (?34/p<(?dB1-?dA1)<22/p, ?34/p<(?dB2??dA2)<22/p).

Abstract: A permanent magnet rotor includes: a rotor shaft; a rotor core having, in each magnetic pole, a first and second outer through holes to make a pair and a first and second inner through holes to make a pair; and a first and second outer magnets, a first and second inner magnets housed in these respectively. An outer opening angle ?a between the first outer through hole and the second outer through hole is larger than an inner opening angle ?b between the first inner through hole and the second inner through hole. An inter-inner through hole length between the first inner through hole and the second inner through hole is larger than that between the first outer through hole and the second outer through hole.

Abstract: According to one embodiment, a rotor includes a rotor core which includes magnetic poles, magnet holding slots for each of the magnetic poles, and permanent magnets arranged in the magnet holding slots, respectively. The magnet holding slot includes a magnet loading area, a magnetic cavity, and an opening which opens to the magnetic cavity and an outer circumference of the rotor core. The rotor core includes a protruding portion having an outer surface which extends to the opening continuously with the outer circumferential surface of the rotor core, an end surface which intersects the outer surface at angle 90±10° to face the opening, and an inner surface which intersects the end surface to form an edge of the magnetic cavity.