Abstract: To provide a hydrodynamic bearing device with high reliability, with which reductions in size, weight, and thickness can be achieved, as well as a motor and a disk driving apparatus that make use of this hydrodynamic bearing device. The hydrodynamic bearing device pertaining to the present invention comprises a shaft 10, a thrust flange 16, a sleeve 11, a seal plate 21, and a retaining plate 20. A radial dynamic pressure bearing is formed in the radial direction gap between the shaft 10 and the sleeve 11, and a thrust dynamic pressure bearing is formed in the thrust dynamic bearing gap between the sleeve 11 and the thrust flange 16. A communicating hole 11d is formed for communicating between the gap between the sleeve 11 and the seal plate 21 and the thrust direction gap between the sleeve 11 and the thrust flange 116.

Abstract: A first electrode layer, which comes into contact with a source region, and a second electrode layer, which comes into contact with a body (back gate) region, are provided. The first and second electrode layers are insulated from each other and are extended in a direction different from an extending direction of a trench. It is possible to individually apply potentials to the first and second electrode layers, and to perform control for preventing a reverse current caused by a parasitic diode. Therefore, a bidirectional switching element can be realized by use of one MOSFET.

Abstract: In a hydrodynamic bearing device in which a radial bearing face having a dynamic pressure generating groove on a shaft or an inner periphery of a sleeve is provided and a clearance between the shaft and the sleeve is filled with lubricant, an annular depression is provided on one end face of the sleeve adjacent to a rotor hub and a cover plate for covering the depression is attached to the sleeve so as to define a reservoir for the lubricant or air for the purpose of preventing such a risk that absence of an oil film occurs in clearances of a bearing of the hydrodynamic bearing device due to outflow of oil upon forcing of the oil by air received into the bearing. A step portion is provided on the other end face of the sleeve such that the step portion and the reservoir are communicated with each other by a communication hole. During operation of the hydrodynamic bearing device, air in the hydrodynamic bearing device reaches the reservoir via the communication hole so as to be discharged from the reservoir.

Abstract: A set of radial dynamic pressure generating grooves constitute a radial bearing, and an entire width (L) of the radial dynamic pressure generating groove is reduced. A set of thrust dynamic pressure generating grooves constituting a thrust bearing are formed so that an area where a maximal thrust dynamic pressure is generated (diameter) is increased, and a bearing angle stiffness of the thrust bearing is increased. The thrust bearing having the high bearing angle stiffness shares a moment load applied to a shaft to thereby compensate for a bearing angle stiffness of the radial bearing whose bearing stiffness is small because an entire width of the radial bearing is small. Thus, a thin-shaped hydrodynamic bearing capable of withstanding a large moment load is obtained.

Abstract: A sleeve 1 is fixed on a base. Radial dynamic-pressure generating grooves 1A and 1B are provided on an inner surface of the sleeve 1. A thrust plate 4 hermetically seals a lower opening end of the sleeve 1. A shaft 2 is inserted inside the sleeve 1, being allowed to revolve. A flange 3 is fixed at the bottom end of the shaft 2, and its lower surface is placed close to an upper surface of the thrust plate 4. Thrust dynamic-pressure generating grooves 3A and 3B are provided on the surfaces of the flange 3. Gaps A–H among the sleeve 1, the shaft 2, the flange 3, and the thrust plate 4 are filled with a lubricant 5. Hollows 1C–1F are provided on the inner surface of the sleeve 1. The gaps A and C over the thrust dynamic-pressure generating grooves 3A and 3B and their vicinities are narrower than the surrounding gaps B and D (A<B, A<D, C<B, and C<D), and the surrounding gaps B and D are narrower than the gap H in the upper opening end of the sleeve 1 and its vicinity (B<H and D<H).

Abstract: The present invention relates to a composition for external application, a humectant and a skin barrier function reinforcing agent, each containing a diamide derivative represented by the following formula (1): (wherein, R1a and R1b are the same or different and each represents a C1-23 hydrocarbon group, R2a and R2b are the same or different and each represents a divalent C1-6 hydrocarbon group, R3s are the same or different and each represents a divalent C2-6 hydrocarbon group and n stands for 1 to 100). The composition for external application, humectant and skin barrier function reinforcing agent basically improve the water retaining ability and barrier functions of the horny layer, are excellent in miscibility and mixing stability and can be prepared efficiently at a low cost.

Abstract: A Schottky barrier diode in which a p+-type semiconductor layer is provided in an n?-type epitaxial layer can realize lowering the forward voltage VF without considering leak current IR. However, when compared with a normal Schottky barrier diode, the forward voltage VF is generally high. When a Schottky metal layer is suitably selected, although the forward voltage VF can be reduced, there is a limit in further reduction. On the other hand, when the resistivity of the n?-type semiconductor layer is reduced, although the forward voltage VF can be realized, there is a problem that breakdown voltage is deteriorated. In a semiconductor device of the invention, a second n?-type semiconductor layer having a low resistivity is laminated on a first n?-type semiconductor layer capable of securing a specified breakdown voltage. P+-type semiconductor regions are made to have depths equal to or slightly deeper than the second n?-type semiconductor layer.

Abstract: A capacity layer is formed of non-doped polysilicon. Unlike capacity layers formed of an oxide film, generation of seams and the like can be suppressed and thereby a stable capacity layer can be formed. Moreover, polysilicon used as a capacity layer may be doped polysilicon, and an oxide film formed on the surface of the polysilicon also serves as a capacity film. Thus, provision of an insulated gate device featuring low capacity is made possible.

Abstract: A fluid dynamic bearing device including a shaft having an interior pressure regulating hole by which a center portion of a thrust surface confronting a thrust plate and a lubricant pool portion of an inner circumferential surface of a sleeve are communicated with each other. Thus, the device is capable of obtaining stable thrust floating characteristics and preventing leaks of the lubricant as well as exhaustion of the lubricant.

Abstract: An object of the present invention is to provide a hydrodynamic bearing device having a high reliability which can achieve miniaturization and reduction of weight and thickness, and a motor and a disc driving apparatus using the same. In the hydrodynamic bearing device according to the present invention, a sleeve through which a shaft penetrates has a first opposing surface substantially orthogonal to a central axis of the shaft at one end and has a second opposing surface at the other end. A thrust plate having a disc shape which is fixed near one end of the shaft or which is integrally formed with the shaft is positioned so as to oppose the first opposing surface of the sleeve. A seal plate positioned near the other end of the shaft is positioned with a gap to the second opposing surface of the sleeve.

Abstract: A hard disk drive device is provided, which is designed small, thin, and at low-cost. The hard disk drive device includes a case with an upright shaft, and a cylindrical hub coupled to the shaft. One end of the hub is closed by a thrust plate so that the hub has a bottomed cylindrical shape, and a hard disk is fixedly mounted on an outer peripheral part of the hub. An oil is filled in a clearance between an inner surface of the hub and an outer surface of the shaft, whereby a hydrodynamic radial bearing is formed between the inner periphery of the hub and the outer periphery of the shaft, and a hydrodynamic thrust bearing is formed between the top face of the shaft and the thrust plate. Between an outer peripheral part at the base end of the shaft and an inner peripheral part at the open end of the hub is formed a seal part in which a larger clearance is formed between the shaft and the hub than a clearance in the hydrodynamic radial bearing and in which the oil surface is positioned.

Abstract: A power MOSFET comprises: a semiconductor substrate 21 of a first conduction type; a drain layer 22 of the first conduction type and formed on a surface layer of the substrate; a gate insulating film 25 formed in a partial region on the drain layer 22; a gate electrode 26 formed on the gate insulating film 25; an insulating film 27 formed on the gate electrode; a side wall insulator 28 formed on side walls of the gate insulating film 25, the gate electrode 26, and the insulating film 27; a recess formed on the drain layer 22 and in a region other than a region where the gate electrode 25 and the side wall insulator 28 are formed; a channel layer 23 of a second conduction type opposite to the first conduction type and formed in a range from the region where the recess is formed to a vicinity of the region where the gate electrode 26 is formed; a source region layer 24 of the one conduction type and formed on the channel layer 23 outside the recess; and a wiring layer 29 formed to cover the channel layer 23 whi

Abstract: A power MOSFET comprises: a semiconductor substrate 21 of a first conduction type; a drain layer 22 of the first conduction type and formed on a surface layer of the substrate; a gate insulating film 25 formed in a partial region on the drain layer 22; a gate electrode 26 formed on the gate insulating film 25; an insulating film 27 formed on the gate electrode; a side wall insulator 28 formed on side walls of the gate insulating film 25, the gate electrode 26, and the insulating film 27; a recess formed on the drain layer 22 and in a region other than a region where the gate electrode 25 and the side wall insulator 28 are formed; a channel layer 23 of a second conduction type opposite to the first conduction type and formed in a range from the region where the recess is formed to a vicinity of the region where the gate electrode 26 is formed; a source region layer 24 of the one conduction type and formed on the channel layer 23 outside the recess; and a wiring layer 29 formed to cover the channel layer 23 whi

Abstract: Conventionally, VF and IR characteristics of a Schottky barrier diode are in a tradeoff relation and there is a problem in that an increase in a leak current is unavoidable in order to realize a reduction in VF. To solve the problem, p type semiconductor regions of a pillar shape reaching an n+ type semiconductor substrate are provided in an n? type semiconductor layer. When a reverse voltage is applied, a depletion layer expanding in a substrate horizontal direction from the p type semiconductor regions fills the n? type semiconductor layer. Thus, it is possible to prevent the leak current generated on a Schottky junction interface from leaking to a cathode side.

Abstract: An interlayer dielectric film is completely buried in a trench, and failures caused by step coverage is prevented because a source electrode can be formed substantially uniformly on an upper portion of a gate electrode. Also, in the processes of forming a source region, a body region and an interlayer dielectric film, only one mask is necessary so that the device size is reduced to account for placement error of only one mask alignment.

Abstract: A Schottky barrier diode in which a p+-type semiconductor layer is provided in an n?-type epitaxial layer can realize lowering the forward voltage VF without considering leak current IR. However, when compared with a normal Schottky barrier diode, the forward voltage VF is generally high. When a Schottky metal layer is suitably selected, although the forward voltage VF can be reduced, there is a limit in further reduction. On the other hand, when the resistivity of the n?-type semiconductor layer is reduced, although the forward voltage VF can be realized, there is a problem that breakdown voltage is deteriorated. In a semiconductor device of the invention, a second n?-type semiconductor layer having a low resistivity is laminated on a first n?-type semiconductor layer capable of securing a specified breakdown voltage. P+-type semiconductor regions are made to have depths equal to or slightly deeper than the second n?-type semiconductor layer.

Abstract: In a conventional semiconductor device, there was a problem that, in a guard ring region, a shape of a depletion layer is distorted and stable withstand voltage characteristics cannot be obtained. In a semiconductor device of the present invention, a thermal oxide film in an actual operation region and a thermal oxide film in a guard ring region are formed in the same process. Thereafter, the thermal oxide film is once removed and is formed again. Thus, a film thickness of the thermal oxide film on the upper surface of the guard ring region is set to, for example, about 8000 to 10000 ?. Accordingly, a CVD oxide film including moving ions is formed in a position distant from a surface of an epitaxial layer. Consequently, distortion of a depletion layer, which is influenced by the moving ions, is suppressed and desired withstand voltage characteristics can be maintained.

Abstract: In conventional semiconductor devices, there observed a problem that cells on the devices may not function uniformly because of voltage drop in a main wiring layer due to a uniform and narrow width of the main wiring layer through which a main current flows. In a semiconductor device of the present invention, a width of one end of a main wire for carrying the main current is formed wider than a width of another end of the main wire. An overall width of the main wire is formed so as to be gradually narrowed from the one end to the another end. In this way, it is possible to reduce a difference in drive voltages between a cell located in the vicinity of an electrode pad for carrying the main current and a cell located in a remote position. Resultantly, it is possible to suppress a voltage drop in the main wire and to achieve uniform operations of cells in an element.

Abstract: The present invention relates to a composition for external application, a humectant and a skin barrier function reinforcing agent, each containing a diamide derivative represented by the following formula (1): (wherein, R1a and R1b are the same or different and each represents a C1-23 hydrocarbon group, R2a and R2b are the same or different and each represents a divalent C1-6 hydrocarbon group, R3s are the same or different and each represents a divalent C2-6 hydrocarbon group and n stands for 1 to 100). The composition for external application, humectant and skin barrier function reinforcing agent basically improve the water retaining ability and barrier functions of the horny layer, are excellent in miscibility and mixing stability and can be prepared efficiently at a low cost.

Abstract: A center core 1, a secondary coil 3 wound at a secondary bobbin 2 and a primary coil 5 wound at a primary bobbin 4 are placed concentrically inside a coil case 6 in sequence from the inside of the coil case. One end of the secondary coil 3 is connected to the primary coil side and becomes a low-voltage side, and the other side becomes a high-voltage side due to an induced voltage and used with connection to the individual ignition plugs of the internal combustion engine. The radial thickness of the bobbin at the low-voltage side 3a and the high-voltage side 3c of the secondary coil, each located at the both ends of the secondary coil, is made larger than the radial thickness of the bobbin at the center part 3b of the secondary coil. The radial thickness of an insulating layer 8 between the secondary coil 3 and the primary coil 5 at the low-voltage side 3a of the secondary coil is smaller and the radial thickness of the insulating layer at the high-voltage side 3b of the secondary coil is larger.