Patents by Inventor Hiroaki YUTO

Hiroaki YUTO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SUBMOUNT AND MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20160118767
    Abstract: The method includes the steps of: preparing a single crystal SiC including an upper surface 10a and a lower surface 10b and provided with a micropipe 11 penetrating from the upper surface 10a to the lower surface 10b; forming a first seed layer 21 made of a metal material on the upper surface 10a of the single crystal SiC; and forming a first plated layer 31 on the first seed layer 21 so as to close an upper end of the micropipe 11, using an electroplating method.
    Type: Application
    Filed: October 22, 2015
    Publication date: April 28, 2016
    Inventors: Akinori YONEDA, Shinya SONOBE, Hiroaki YUTO
  • Semiconductor laser device and manufacturing method thereof, and submount manufacturing method
    Patent number: 9318871
    Abstract: A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.
    Type: Grant
    Filed: April 25, 2014
    Date of Patent: April 19, 2016
    Assignee: NICHIA CORPORATION
    Inventors: Hiroki Sakata, Hiroaki Yuto, Eiichiro Okahisa, Kazuma Kozuru
  • SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF, AND SUBMOUNT MANUFACTURING METHOD
    Publication number: 20140321491
    Abstract: A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.
    Type: Application
    Filed: April 25, 2014
    Publication date: October 30, 2014
    Applicant: NICHIA CORPORATION
    Inventors: Hiroki SAKATA, Hiroaki YUTO, Eiichiro OKAHISA, Kazuma KOZURU