Abstract: A method of producing organic-inorganic hybrid infrared absorbing particles includes a dispersion liquid preparing step of preparing a dispersion liquid containing infrared absorbing particles, a dispersant, and a dispersion medium; a dispersion medium removing step of removing the dispersion medium from the dispersion liquid by an evaporation; a raw material mixture liquid preparing step of preparing a raw material mixture liquid containing the infrared absorbing particles collected after the dispersion medium removing step, a coating resin material, an organic solvent, an emulsifying agent, water, and a polymerization initiator; a stirring step of stirring the raw material mixture liquid while cooling; and a polymerizing step of polymerizing the coating resin material after deoxygenation treatment which reduces an amount of oxygen in the raw material mixture liquid.

Abstract: A method for manufacturing a light-emitting element includes: providing a structure body including: a semiconductor structure body having a first surface, a second surface located on a side opposite to the first surface, and a lateral surface that connects the first surface and the second surface, a first insulating film covering the lateral surface of the semiconductor structure body, a second insulation film covering the first surface of the semiconductor structure body and an upper surface of the first insulating film on a first surface side, and a substrate facing the second surface of the semiconductor structure body; forming a mask on a part of the second insulating film located above the first surface of the semiconductor structure body; and removing a part of the second insulating film located around the mask in a top view and exposed from the mask.

Abstract: A light emitting element includes: a Si substrate including: a first semiconductor layer, a plurality of light emitting layers arranged in a matrix on part of an upper surface of the first semiconductor layer, and a plurality of second semiconductor layers respectively disposed on upper surfaces of the light emitting layers; a first external connection part disposed on the Si substrate at a first end of the Si substrate in a longitudinal direction; a second external connection part disposed on the Si substrate at a second end of the Si substrate opposite to the first end in the longitudinal direction; and a plurality of wiring electrodes disposed on the Si substrate, the plurality of wiring electrodes including a first wiring electrode electrically connected to the first external connection part, and a second wiring electrode electrically connected to the second external connection part.

Abstract: A semiconductor device has a position estimation part calculating an estimated position of a mobile at a scheduled time to project a message image, based on movement information of the mobile, a reference image signal output part deciding a reference area being an area to project a reference image, based on a relative positional relation between the mobile at the estimated position and the projection area, and outputting a reference image signal being a signal of the reference image, a test image signal acquisition part acquiring a test image signal being a signal of an image obtained by imaging the reference area with the reference image projected thereon, and an image adjustment part adjusting the message image signal, based on the reference image signal and the test image signal.

Abstract: An electric heating device includes a control portion adapted to control electric energy supplied to a heater, based on a before-heating temperature, which is a temperature of at least one of an object, the heater and a heat dissipation portion before the heater generates heat, the control portion is adapted to calculate the temperature of the object, based on the before-heating temperature and the electric energy supplied to the heater.

Abstract: A semiconductor device includes an image acquisition circuit which acquires a plurality of captured image data obtained by capturing a plurality of images, an estimation source image generation circuit which cancels effects of initial color adjustment processing on each captured image data to generate image data of a plurality of estimation source images, a readjustment circuit which divides each estimation source image into a plurality of processing regions to perform color balance readjustment processing for each processing region, and an image synthesis circuit which synthesizes the image data of the plurality of estimation source images so that overlapping regions included in the estimation source images overlap each other to generate image data of a synthesized image.

Abstract: A semiconductor device includes an image data acquisition circuit which acquires a plurality of first captured image data and a plurality of second captured image data at a first time and a second time, an adjustment region determination circuit which detects a target object from the plurality of first captured image data, and determines an adjustment region by estimating a position of the target object at the second time, a color adjustment circuit configured to determine a color adjustment gain based on the adjustment region, and perform color balance adjustment processing on the plurality of second captured image data based on the color adjustment gain, and an image synthesis circuit configured to synthesize the plurality of second captured image data so that overlapping regions included in a plurality of images of the plurality of second captured image data overlap each other.

Abstract: A light-emitting device includes: a semiconductor stacked body including: an n-type semiconductor layer having an n-side contact surface, a light-emitting layer located on a region of the n-type semiconductor layer surrounding the n-side contact surface in a top-view, and a p-type semiconductor layer provided on the light-emitting layer; an n-side electrode contacting the n-side contact surface; a p-side electrode located on and contacting the p-type semiconductor layer; and an insulating film opposing a side surface of the light-emitting layer; wherein a first gap portion is located between the insulating film and the side surface of the light-emitting layer such that the side surface of the light-emitting layer is exposed at the first gap portion.

Abstract: A manufacturing method of a flip-chip nitride semiconductor light emitting element includes a step of providing a nitride semiconductor light emitting element structure; a protective layer forming step; a first resist pattern forming step; a protective layer etching step; a first metal layer forming step; a first resist pattern removing step; a third metal layer forming step; a second resist pattern forming step; a second metal layer forming step; a second resist pattern removing step; and a third metal layer removing step.

Abstract: To provide a semiconductor device which suppresses a message image projected by a mobile from varying from a desired position. A semiconductor device has a first area decision part which decides a first area onto which a message image is projected, based on movement information of a mobile. The semiconductor device has a delay period calculation part which calculates a delay period being a period from a first time for projecting the message image onto the first area to a second time when the message image is projectable. Also, the semiconductor device has a second area decision part which adjusts the first area, based on the delay period to decide a second area. Further, the semiconductor device has an image signal conversion part which converts a message image signal according to the second area.

Abstract: A semiconductor device includes an image acquisition circuit which acquires a plurality of captured image data obtained by capturing a plurality of images, an estimation source image generation circuit which cancels effects of initial color adjustment processing on each captured image data to generate image data of a plurality of estimation source images, a readjustment circuit which divides each estimation source image into a plurality of processing regions to perform color balance readjustment processing for each processing region, and an image synthesis circuit which synthesizes the image data of the plurality of estimation source images so that overlapping regions included in the estimation source images overlap each other to generate image data of a synthesized image.

Abstract: A semiconductor device includes an image data acquisition circuit which acquires a plurality of first captured image data and a plurality of second captured image data at a first time and a second time, an adjustment region determination circuit which detects a target object from the plurality of first captured image data, and determines an adjustment region by estimating a position of the target object at the second time, a color adjustment circuit configured to determine a color adjustment gain based on the adjustment region, and perform color balance adjustment processing on the plurality of second captured image data based on the color adjustment gain, and an image synthesis circuit configured to synthesize the plurality of second captured image data so that overlapping regions included in a plurality of images of the plurality of second captured image data overlap each other.

Abstract: A method of manufacturing a light emitting device includes: a first wafer preparation step including preparing, on a first substrate, m first wafers (where m?2), each of the first wafers comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a second wafer preparation step including bonding a second substrate with the second semiconductor layer of a first of the m first wafers and then removing the first substrate from the first wafer, so as to form a second wafer in which the first semiconductor layer is exposed; and a first bonding step including bonding the first semiconductor layer exposed at the surface of the second wafer and the second semiconductor layer of a second of the m first wafers together using a light-transmissive conductive layer, and then removing a first substrate of the second of the m first wafers.

Abstract: A light emitting element includes: a Si substrate including: a first semiconductor layer, a plurality of light emitting layers arranged in a matrix on part of an upper surface of the first semiconductor layer, and a plurality of second semiconductor layers respectively disposed on upper surfaces of the light emitting layers; a first external connection part disposed on the Si substrate at a first end of the Si substrate in a longitudinal direction; a second external connection part disposed on the Si substrate at a second end of the Si substrate opposite to the first end in the longitudinal direction; and a plurality of wiring electrodes disposed on the Si substrate, the plurality of wiring electrodes including a first wiring electrode electrically connected to the first external connection part, and a second wiring electrode electrically connected to the second external connection part.

Abstract: To provide a semiconductor device which suppresses a message image projected by a mobile from varying from a desired position. A semiconductor device has a first area decision part which decides a first area onto which a message image is projected, based on movement information of a mobile. The semiconductor device has a delay period calculation part which calculates a delay period being a period from a first time for projecting the message image onto the first area to a second time when the message image is projectable. Also, the semiconductor device has a second area decision part which adjusts the first area, based on the delay period to decide a second area. Further, the semiconductor device has an image signal conversion part which converts a message image signal according to the second area.

Abstract: A semiconductor device has a position estimation part calculating an estimated position of a mobile at a scheduled time to project a message image, based on movement information of the mobile, a reference image signal output part deciding a reference area being an area to project a reference image, based on a relative positional relation between the mobile at the estimated position and the projection area, and outputting a reference image signal being a signal of the reference image, a test image signal acquisition part acquiring a test image signal being a signal of an image obtained by imaging the reference area with the reference image projected thereon, and an image adjustment part adjusting the message image signal, based on the reference image signal and the test image signal.

Abstract: A light-emitting device includes: a semiconductor stacked body including: an n-type semiconductor layer having an n-side contact surface, a light-emitting layer located on a region of the n-type semiconductor layer surrounding the n-side contact surface in a top-view, and a p-type semiconductor layer provided on the light-emitting layer; an n-side electrode contacting the n-side contact surface; a p-side electrode located on and contacting the p-type semiconductor layer; and an insulating film opposing a side surface of the light-emitting layer; wherein a first gap portion is located between the insulating film and the side surface of the light-emitting layer such that the side surface of the light-emitting layer is exposed at the first gap portion.

Abstract: An image processing device includes a luminance modulator operable to receive a video input signal and operable to calculate a video output signal to be supplied to a display panel, a peak value detector operable to calculate a peak value as a maximum luminance in a prescribed region of the video input signal, a histogram detector operable to calculate frequency distribution about a luminance value of the video input signal in the prescribed region, a peak Automatic contrast level (ACL) control gain calculation unit operable to calculate a peak ACL control gain with which luminance of each pixel of the video input signal is amplified, based on the ratio of the peak value to a maximum possible value of the video output signal, and a pattern-adaptive gamma characteristic calculation unit operable to calculate a luminance modulation gain.

Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.

Abstract: A semiconductor device includes an imaging time decision circuit that decides an imaging estimated time for a camera, a subject decision circuit that obtains distance data containing information related to a relative position between the camera and an object at every preliminarily-set time, and decides a subject on the basis of the distance data in accordance, a moving vector calculation circuit that calculates the moving vector of the subject on the basis of a plurality of pieces of distance data obtained at a plurality of different times, and an imaging condition decision circuit that calculates subject position estimation data that is a relative position between the camera and the subject at the imaging estimated time, decides an imaging conditions at the imaging estimated time, and instructs the camera to image at the imaging estimated time in accordance with the decided imaging conditions.