Patents by Inventor Hirohiko Yamamoto

Hirohiko Yamamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6482835
    Abstract: Processes for producing a 7-isoindoline-quinolonecarboxylic acid derivative represented by the general formula [1] which is useful as an antibacterial agent, and an intermediate thereof: comprising reacting, in the presence of metallic palladium, an isoindoline-5-boronic acid, or of a 5-halogenoisoindoline, in the presence of a palladium catalyst, with a dialkoxyborane or an alkoxydiborane.
    Type: Grant
    Filed: September 25, 2001
    Date of Patent: November 19, 2002
    Assignee: Toyama Chemical Co., Ltd.
    Inventors: Minoru Yamada, Shoichi Hamamoto, Kazuya Hayashi, Kazuko Takaoka, Hiroko Matsukura, Minako Yotsuji, Kenji Yonezawa, Katsuji Ojima, Tamotsu Takamatsu, Kyoko Taya, Hirohiko Yamamoto, Taro Kiyoto, Hironori Kotsubo
  • Patent number: 6444405
    Abstract: Conductive layers are formed in the trenches made in an insulating film in the following manner. First, an amorphous silicon film 26A is deposited in the trenches 25 made in a silicon oxide film 24. A photoresist film 30 is then formed on the amorphous silicon film 26A by means of spin coating. Then, exposure light is applied to the entire surface of the photoresist film 30, thereby exposing to light those parts of the photoresist film 30 which lie outside the trenches 25. The other parts of the photoresist film 30, which lie in the trenches 25 are not exposed to light because the light reaching them is inadequate. Further, the photoresist film 30 is developed thereby removing those parts of the film 30 which lie outside the trenches 25 and which have been exposed to light. Thereafter, those parts of the amorphous silicon film 26A, which lie outside the trenches 25, are removed by means of dry etching using, as a mask, the unexposed parts of the photoresist film 30 which remain in the trenches 25.
    Type: Grant
    Filed: June 30, 2000
    Date of Patent: September 3, 2002
    Assignees: Hitachi, Ltd., Hitachi Ulsi Systems Co., LTD
    Inventors: Ryouichi Furukawa, Kazuyuki Suko, Masayuki Hiranuma, Koichi Saitoh, Hirohiko Yamamoto, Tadanori Yoshida, Masayuki Ishizaka, Maki Shimoda
  • Publication number: 20020098678
    Abstract: Conductive layers are formed in the trenches made in an insulating film in the following manner. First, an amorphous silicon film 26A is deposited in the trenches 25 made in a silicon oxide film 24. A photoresist film 30 is then formed on the amorphous silicon film 26A by means of spin coating. Then, exposure light is applied to the entire surface of the photoresist film 30, thereby exposing to light those parts of the photoresist film 30 which lie outside the trenches 25. The other parts of the photoresist film 30, which lie in the trenches 25 are not exposed to light because the light reaching them is inadequate. Further, the photoresist film 30 is developed thereby removing those parts of the film 30 which lie outside the trenches 25 and which have been exposed to light. Thereafter, those parts of the amorphous silicon film 26A, which lie outside the trenches 25, are removed by means of dry etching using, as a mask, the unexposed parts of the photoresist film 30 which remain in the trenches 25.
    Type: Application
    Filed: April 2, 2002
    Publication date: July 25, 2002
    Applicant: Hitachi, Ltd.
    Inventors: Ryouichi Furukawa, Kazuyuki Suko, Masayuki Hiranuma, Koichi Saitoh, Hirohiko Yamamoto, Tadanori Yoshida, Masayuki Ishizaka, Maki Shimoda
  • Publication number: 20020061608
    Abstract: There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in increase of time required for manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary BL between the element forming region DA and dummy region FA by placing the first dummy pattern DP1 of relatively wider area and the second dummy pattern DP2 of relatively small area in the dummy region FA. Thereby, the flatness of the surface of the silicon oxide film embedded within the isolation groove can be improved in the entire part of the dummy region FA. Moreover, increase of mask data can be controlled when the first dummy patterns DP1 occupy the relatively wide region among the dummy region FA.
    Type: Application
    Filed: November 2, 2001
    Publication date: May 23, 2002
    Inventors: Kenichi Kuroda, Kozo Watanabe, Hirohiko Yamamoto
  • Publication number: 20020049328
    Abstract: Processes for producing a 7-isoindoline-quinolonecarboxylic acid derivative represented by the general formula [1] which is useful as an antibacterial agent, and an intermediate thereof: 1
    Type: Application
    Filed: September 25, 2001
    Publication date: April 25, 2002
    Applicant: TOYAMA CHEMICAL CO., LTD.
    Inventors: Minoru Yamada, Shoichi Hamamoto, Kazuya Hayashi, Kazuko Takaoka, Hiroko Matsukura, Minako Yotsuji, Kenji Yonezawa, Katsuji Ojima, Tamotsu Takamatsu, Kyoko Taya, Hirohiko Yamamoto, Taro Kiyoto, Hironori Kotsubo
  • Patent number: 6343094
    Abstract: An improved filter for use in a CDMA receiver having an RF front end for splitting a received signal into I and Q components, A/D converters for converting the I and Q components into I and Q digital components, a control processor for controlling the receiver, a system clock and a power supply, the improved filter including a matched filtering mechanism, wherein each filter includes: a separation mechanism to separate a digital I signal and a digital Q signal into MSB and LSB signal components; a MSB sub-portion having multiple MSB delay elements, a multiplier associated with each delay element, and a MSB adder for processing said MSB signal components; a LSB sub-portion having multiple LSB delay elements, a multiplier associated with each delay element, and a LSB adder for processing said LSB signal components, wherein said LSB sub-portion has fewer delay elements than said MSB sub-portion; a third adder for adding said processed MSB and LSB signal components to provide a filter output; and a half clock gen
    Type: Grant
    Filed: January 22, 1999
    Date of Patent: January 29, 2002
    Assignee: Sharp Laboratories of America, Inc.
    Inventor: Hirohiko Yamamoto
  • Patent number: 6337399
    Abstract: This invention relates to processes for producing a 7-isoindoline-quinolonecarboxylic acid derivative represented by the general formula [1] which is useful as an antibacterial agent, and an intermediate thereof: wherein R1 represents a hydrogen atom or a carboxyl-protecting group; R2 represents a substituted or unsubstituted alkyl, alkenyl, cycloalkyl, aryl or heterocyclic group; R3 represents at least one group selected from hydrogen atom, halogen atoms, substituted or unsubstituted alkyl, alkenyl, cycloalkyl, aryl, alkoxy or alkylthio groups, nitro group, cyano group, acyl groups, protected or unprotected hydroxyl groups and protected or unprotected or substituted or unsubstituted amino groups; R4 represents at least one group selected from hydrogen atom, halogen atoms, substituted or unsubstituted alkyl, alkenyl, cycloalkyl, aralkyl, aryl, alkoxy or alkylthio groups, protected or unprotected hydroxyl or imino groups, protected or unprotected or substituted or unsubstituted amin
    Type: Grant
    Filed: April 26, 2000
    Date of Patent: January 8, 2002
    Assignee: Toyama Chemical Co., Ltd.
    Inventors: Minoru Yamada, Shoichi Hamamoto, Kazuya Hayashi, Kazuko Takaoka, Hiroko Matsukura, Minako Yotsuji, Kenji Yonezawa, Katsuji Ojima, Tamotsu Takamatsu, Kyoko Taya, Hirohiko Yamamoto, Taro Kiyoto, Hironori Kotsubo
  • Publication number: 20010026996
    Abstract: A semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step, there is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.
    Type: Application
    Filed: May 1, 2001
    Publication date: October 4, 2001
    Inventors: Norio Ishitsuka, Hideo Miura, Shuji Ikeda, Norio Suzuki, Yasushi Matsuda, Yasuko Yoshida, Hirohiko Yamamoto, Masamichi Kobayashi, Akira Takamatsu, Hirofumi Shimizu, Kazushi Fukuda, Shinichi Horibe, Toshio Nozoe
  • Patent number: 6289061
    Abstract: A wideband receiver automatic frequency control (AFC) system which combines multipath or diverse antenna signals, before the carrier frequency error is determined, is provided herein. Rather than independently calculating the frequency error of each transmission path, frequency error is calculated after the multipath signals are summed together. Thus, only a single frequency detector circuit is required. The resulting automatic frequency control system has the accuracy of a system which combines the independently calculated frequency errors, with fewer steps of computation required. A method for combining multipath signals to calculate an average AFC frequency error is also provided.
    Type: Grant
    Filed: September 24, 1998
    Date of Patent: September 11, 2001
    Assignee: Sharp Laboratories of America, Inc.
    Inventors: Srinivas Kandala, V. Srinivasa Somayazulu, John M. Kowalski, Hirohiko Yamamoto
  • Patent number: 6242323
    Abstract: A semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step, there is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.
    Type: Grant
    Filed: August 16, 1999
    Date of Patent: June 5, 2001
    Assignees: Hitachi, Ltd., Hitachi ULSI Systems Co., Ltd.
    Inventors: Norio Ishitsuka, Hideo Miura, Shuji Ikeda, Norio Suzuki, Yasushi Matsuda, Yasuko Yoshida, Hirohiko Yamamoto, Masamichi Kobayashi, Akira Takamatsu, Hirofumi Shimizu, Kazushi Fukuda, Shinichi Horibe, Toshio Nozoe
  • Patent number: 6153613
    Abstract: The present invention relates to a 2,3-diketopiperazine derivative or a salt thereof, which has inhibitory effect on platelet aggregation because of glycoprotein IIb/IIIa receptor antagonism and hence is useful as a prophylactic and therapeutic agent for diseases associated with platelet aggregation.General formula ##STR1## wherein R.sup.1 represents a protected or unprotected amidino group; R.sup.2 represents a hydrogen atom or a carboxyl-protecting group; A represents a substituted or unsubstituted lower alkylene group; B represents --O--, --CONH--, --NHCO-- or --SO.sub.2 NH--; Y represents a substituted or unsubstituted lower alkylene group; and the broken line represents a single bond or a double bond.
    Type: Grant
    Filed: October 29, 1998
    Date of Patent: November 28, 2000
    Assignee: Toyoma Chemical Co., Ltd.
    Inventors: Satoshi Ono, Tetsuo Yamafuji, Hirohiko Yamamoto, Hiroyuki Egawa, Yousuke Furuta, Hidetoshi Kaga
  • Patent number: 6057241
    Abstract: A silicon oxide film 2 which is exposed from a side wall of a groove 4a is etched to displace the silicon oxide film 2 backward toward an active region. The displacement amount is set to be equal to or more than a film thickness (Tr) of a silicon oxide film 5 to be formed on an inner wall of the groove 4a in a later thermal oxidation step and equal to or less than twice the film thickness (Tr) thereof. A shoulder portion of the groove 4a can be rounded by a low-temperature heat treatment at 1000.degree. C. or less, by controlling a heat treatment period such that the film thickness (Tr) of the silicon oxide film 5 is more than the film thickness (Tp) of the silicon oxide film 2 and equal to or less than three times the film thickness (Tr) thereof (Tp<Tr.ltoreq.
    Type: Grant
    Filed: April 27, 1998
    Date of Patent: May 2, 2000
    Assignees: Hitachi, Ltd., Hitachi ULSI Systems Co., Ltd.
    Inventors: Yasushi Matsuda, Hideo Miura, Hirohiko Yamamoto, Masamichi Kobayashi, Shuji Ikeda, Akira Takamatsu, Norio Suzuki, Hirofumi Shimizu, Yasuko Yoshida, Kazushi Fukuda, Shinichi Horibe, Toshio Nozoe
  • Patent number: 5877174
    Abstract: The present invention relates to a 2,3-diketopiperazine derivative or a salt thereof, which has inhibitory effect on platelet aggregation because of glycoprotein IIb/IIIa receptor antagonism and hence is useful as a prophylactic and therapeutic agent for diseases associated with platelet aggregation. General formula: ##STR1## wherein R.sup.1 represents a protected or unprotected amidino group; R.sup.2 represents a hydrogen atom or a carboxyl-protecting group; A represents a substituted or unsubstituted lower alkylene group; B represents --O--, --CONH--, --NHCO--or --SO.sub.2 NH--; Y represents a substituted or unsubstituted lower alkylene group; and the broken line represents a single bond or a double bond.
    Type: Grant
    Filed: May 30, 1997
    Date of Patent: March 2, 1999
    Assignee: Toyama Chemical Co., Ltd.
    Inventors: Satoshi Ono, Tetsuo Yamafuji, Hirohiko Yamamoto, Hiroyuki Egawa, Yousuke Furuta, Hidetoshi Kaga
  • Patent number: 5346300
    Abstract: A first radiation member 165 includes radiation conductors 166 and 167, an arm 168 and a lower connection piece 169 all integrally formed by blanking. A stub 170 is likewise integrally formed on radiation conductor 166. A second radiation member 171 includes radiation conductors 172 and 173, an arm 174 and a lower connection piece 175 all integrally formed by blanking. A stub 176 is likewise integrally formed on radiation conductor 173. A first loop comprised of radiation conductors 167 and 172, arms 168 and 174 and lower connection pieces 169 and 175 exhibits capacitive impedance at a wavelength for use. The overall length of a second loop comprised of radiation conductors 166 and 173, arms 168 and 174 and lower connection pieces 169 and 175 is set equal to that of the first loop. The second loop, however, exhibits inductive impedance at the wavelength for use by adjustment of the length of stubs 170 and 176. Adjusting stubs 170 and 176 enable control of a phase of a current flowing through the second loop.
    Type: Grant
    Filed: July 1, 1992
    Date of Patent: September 13, 1994
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Hirohiko Yamamoto, Keijirou Higashi, Hiroyuki Takebe, Hiroshi Nakano, Tomozo Ohta
  • Patent number: 5021790
    Abstract: A microwave data transmission apparatus adapted to transmit and receive information by microwaves, in which an identification tag is made smaller in size and lighter in weight to considerably improve the convenience in a setting operation for use in many applications. The apparatus can be applied for production control within a factory or can be used to recognize whether a person wearing an identification tag has entered or left a room.
    Type: Grant
    Filed: May 14, 1990
    Date of Patent: June 4, 1991
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tomozo Ohta, Hiroshi Nakano, Kazutada Higashi, Hirohiko Yamamoto
  • Patent number: 4951111
    Abstract: An integrated circuit device includes insulated-gate field effect transistors employing a semiconductor gate electrode used as a logic element. Part of the input interconnection layer serves as the semiconductor gate electrode and orthogonally intersects with a conductive layer. The logic circuits are interconnected to constitute a random gate logic circuit that can be operated at high speeds and formed with a high density.
    Type: Grant
    Filed: January 3, 1985
    Date of Patent: August 21, 1990
    Assignee: Nippon Electric Co., Ltd.
    Inventor: Hirohiko Yamamoto
  • Patent number: 4926182
    Abstract: A microwave data transmission apparatus adapted to transmit and receive information by microwaves, which the identification tag is made smaller in size and lighter in weight to considerably improve the convenience in setting operation for use in many applications, can be applied for the production control within the factory or the control for entering and leaving the room by a person having an identification tag.
    Type: Grant
    Filed: May 29, 1987
    Date of Patent: May 15, 1990
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tomozo Ohta, Hiroshi Nakano, Kazutada Higashi, Hirohiko Yamamoto
  • Patent number: 4712111
    Abstract: An antenna system includes a reflector which is a part of a paraboloid of revolution or parabolic cylinder, a primary radiator for clockwise circularly polarized wave, and a primary radiator for counterclockwise circularly polarized wave. The reflector is of geometrically asymmetrical shape to effect different reflection properties for clockwise and counterclockwise circular polarizations. The primary radiators are fixed at two different positions in the vicinity of the focus of the paraboloid reflector.
    Type: Grant
    Filed: December 26, 1985
    Date of Patent: December 8, 1987
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tomozo Ohta, Kazutada Higashi, Hirohiko Yamamoto