Abstract: A field-effect transistor comprises, on a substrate, a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; wires individually electrically connected to the source electrode and the drain electrode; and a gate insulating layer that insulates the semiconductor layer from the gate electrode, wherein a connecting portion between the source electrode and the wire forms a continuous phase, and a connecting portion between the drain electrode and the wire forms a continuous phase, the portions constituting the continuous phases contain at least an electrically conductive component and an organic component, and integrated values of optical reflectance at a region of a wavelength of 600 nm or more and 900 nm or less on the wires are higher than integrated values of optical reflectance at a region of a wavelength of 600 nm or more and 900 nm or less on the source electrode and the drain electrode.

Abstract: An integrated circuit includes a memory array that stores data, a rectifying circuit that rectifies an alternating current and generates a direct-current voltage, and a logic circuit that reads data stored in a memory. The memory array includes a first semiconductor memory element having a first semiconductor layer. The rectifying circuit includes a second semiconductor rectifying element having a second semiconductor layer. The logic circuit includes a third semiconductor logic element having a third semiconductor layer. The second semiconductor layer is a functional layer exhibiting a rectifying action and the third semiconductor layer is a channel layer of a logic element. All the first, second and third semiconductor layers, the functional layer exhibiting a rectifying action and the channel layer are formed of the same material including at least one selected from an organic semiconductor, a carbon nanotube, graphene, or fullerene.

Abstract: A wireless communication device includes: an antenna for transmitting and receiving a radio wave, a rectifying circuit that is connected to the antenna and rectifies the radio wave received by the antenna to generate voltage, an internal circuit that operates by the voltage generated by the rectifying circuit, and a switch circuit that is disposed contactlessly with respect to the antenna and operates on the basis of an output signal of the internal circuit, wherein the switch circuit includes a coupling wiring and a switch element, and the operation of the switch element varies the impedance of the antenna so that communication can be carried out.

Abstract: A field-effect transistor comprises, on a substrate, a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; wires individually electrically connected to the source electrode and the drain electrode; and a gate insulating layer that insulates the semiconductor layer from the gate electrode, wherein a connecting portion between the source electrode and the wire forms a continuous phase, and a connecting portion between the drain electrode and the wire forms a continuous phase, the portions constituting the continuous phases contain at least an electrically conductive component and an organic component, and integrated values of optical reflectance at a region of a wavelength of 600 nm or more and 900 nm or less on the wires are higher than integrated values of optical reflectance at a region of a wavelength of 600 nm or more and 900 nm or less on the source electrode and the drain electrode.

Abstract: An object of the present invention is to provide a method for accurately forming an antenna substrate as well as an antenna substrate with wiring line and electrode by a coating method. One aspect of the present invention provides a method for producing an antenna substrate with wiring line and electrode including the steps of: (1) forming a coating film using a photosensitive paste containing a conductive material and a photosensitive organic component on an insulating substrate; (2-A) processing the coating film into a pattern corresponding to an antenna by photolithography; (2-B) processing the coating film into a pattern corresponding to a wiring line; (2-C) processing the coating film into a pattern corresponding to an electrode; (3-A) curing the pattern corresponding to an antenna into an antenna; (3-B) curing the pattern corresponding to a wiring line into a wiring line; and (3-C) curing the pattern corresponding to an electrode into an electrode.

Abstract: A memory array includes: a plurality of first wires; at least one second wire crossing the first wires; and a plurality of memory elements provided in correspondence with respective intersections of the first wires and the at least one second wire and each having a first electrode and a second electrode arranged spaced apart from each other, a third electrode connected to one of the at least one second wire, and an insulating layer that electrically insulates the first electrode and the second electrode and the third electrode from each other, the first wires, the at least one second wire, and the first wires, the at least one second wire, and the memory elements being formed on a substrate.

Abstract: Provided is a method for manufacturing a field-effect transistor, the method including the steps of: forming a gate electrode on the surface of a substrate; forming a gate insulating layer on the gate electrode; forming a conductive film containing a conductor and a photosensitive organic component by a coating method on the gate insulating layer; exposing the conductive film from the rear surface side of the substrate with the gate electrode as a mask; developing the exposed conductive film to form a source electrode and a drain electrode; and forming a semiconductor layer by a coating method between the source electrode and the drain electrode. This method makes it possible to provide an FET, a semiconductor device, and an RFID which can be prepared by a simple process, and which have a high mobility, and have a gate electrode and source/drain electrodes aligned with a high degree of accuracy.

Abstract: The present invention is to provide a semiconductor element achieving a high-level detection sensitivity when utilized as a sensor. The present invention relates to a semiconductor element including an organic film, a first electrode, a second electrode, and a semiconductor layer, in which the first electrode, the second electrode and the semiconductor layer are formed on the organic film, the semiconductor layer is arranged between the first electrode and the second electrode, the semiconductor layer contains a carbon nanotube, and the organic film has a water contact angle of 5° or more and 50° or less.

Abstract: A wireless communication device includes: an antenna for transmitting and receiving a radio wave, a rectifying circuit that is connected to the antenna and rectifies the radio wave received by the antenna to generate voltage, an internal circuit that operates by the voltage generated by the rectifying circuit, and a switch circuit that is disposed contactlessly with respect to the antenna and operates on the basis of an output signal of the internal circuit, wherein the switch circuit includes a coupling wiring and a switch element, and the operation of the switch element varies the impedance of the antenna so that communication can be carried out.

Abstract: A memory array includes: a plurality of first wires; at least one second wire crossing the first wires; and a plurality of memory elements provided in correspondence with respective intersections of the first wires and the at least one second wire and each having a first electrode and a second electrode arranged spaced apart from each other, a third electrode connected to one of the at least one second wire, and an insulating layer that electrically insulates the first electrode and the second electrode and the third electrode from each other, the first wires, the at least one second wire, and the first wires, the at least one second wire, and the memory elements being formed on a substrate.

Abstract: An object of the present invention is to provide an excellent integrated circuit by a simple process.

Abstract: Provided is a capacitor that has good bonding between the dielectric layer and the conductive layer, has a characteristic of low ESR, and keeps leak current suppressed. The capacitor contains a dielectric layer and a conductive film and is characterized in that the dielectric layer contains an organic compound and a metal compound and that the conductive film contains a conductive material and an organic compound.

Abstract: An excellent complementary semiconductor device is provided using a simple process. An n-type drive semiconductor device including a substrate; and a source electrode, a drain electrode, a gate electrode, a gate insulating layer, and a semiconductor layer on the substrate; and including a second insulating layer on the opposite side of the semiconductor layer from the gate insulating layer; in which the second insulating layer contains an organic compound containing a bond between a carbon atom and a nitrogen atom; and in which the semiconductor layer contains a carbon nanotube composite having a conjugated polymer attached to at least a part of the surface thereof.

Abstract: An object of the present invention is to provide a ferroelectric memory element which has a low driving voltage and which can be formed by coating. The present invention provides a ferroelectric memory element including at least: a first conductive film; a second conductive film; and a ferroelectric layer provided between the first conductive film and the second conductive film; wherein the ferroelectric layer contains ferroelectric particles and an organic component, and wherein the ferroelectric particles have an average particle size of from 30 to 500 nm.

Abstract: There is provided a rectifying element which is provided with an insulating base, (a) a pair of electrodes composed of a first electrode and a second electrode and (b) a semiconductor layer arranged between the pair of electrodes, wherein the components (a) and (b) are provided on a first surface of the insulating base. The rectifying element is configured such that the semiconductor layer (b) contains carbon nanotube composites each of which comprises a carbon nanotube and a conjugated polymer adhered onto at least a part of the surface of the carbon nanotube. The present invention provides a rectifying element having excellent rectifying properties by a simple process.

Abstract: Provided is a method for manufacturing a field-effect transistor, the method including the steps of: forming a gate electrode on the surface of a substrate; forming a gate insulating layer on the gate electrode; forming a conductive film containing a conductor and a photosensitive organic component by a coating method on the gate insulating layer; exposing the conductive film from the rear surface side of the substrate with the gate electrode as a mask; developing the exposed conductive film to form a source electrode and a drain electrode; and forming a semiconductor layer by a coating method between the source electrode and the drain electrode. This method makes it possible to provide an FET, a semiconductor device, and an RFID which can be prepared by a simple process, and which have a high mobility, and have a gate electrode and source/drain electrodes aligned with a high degree of accuracy.

Abstract: An excellent complementary semiconductor device is provided using a simple process. An n-type drive semiconductor device including a substrate; and a source electrode, a drain electrode, a gate electrode, a gate insulating layer, and a semiconductor layer on the substrate; and including a second insulating layer on the opposite side of the semiconductor layer from the gate insulating layer; in which the second insulating layer contains an organic compound containing a bond between a carbon atom and a nitrogen atom; and in which the semiconductor layer contains a carbon nanotube composite having a conjugated polymer attached to at least a part of the surface thereof.

Abstract: An object of the present invention is to provide a ferroelectric memory element which has a low driving voltage and which can be formed by coating. The present invention provides a ferroelectric memory element including at least: a first conductive film; a second conductive film; and a ferroelectric layer provided between the first conductive film and the second conductive film; wherein the ferroelectric layer contains ferroelectric particles and an organic component, and wherein the ferroelectric particles have an average particle size of from 30 to 500 nm.

Abstract: Provided is a capacitor that has good bonding between the dielectric layer and the conductive layer, has a characteristic of low ESR, and keeps leak current suppressed. The capacitor contains a dielectric layer and a conductive film and is characterized in that the dielectric layer contains an organic compound and a metal compound and that the conductive film contains a conductive material and an organic compound.

Abstract: The present invention is to provide a semiconductor element achieving a high-level detection sensitivity when utilized as a sensor. The present invention relates to a semiconductor element including an organic film, a first electrode, a second electrode, and a semiconductor layer, in which the first electrode, the second electrode and the semiconductor layer are formed on the organic film, the semiconductor layer is arranged between the first electrode and the second electrode, the semiconductor layer contains a carbon nanotube, and the organic film has a water contact angle of 5° or more and 50° or less.