Abstract: An object of the present invention is to provide a method for accurately forming an antenna substrate as well as an antenna substrate with wiring line and electrode by a coating method. One aspect of the present invention provides a method for producing an antenna substrate with wiring line and electrode including the steps of: (1) forming a coating film using a photosensitive paste containing a conductive material and a photosensitive organic component on an insulating substrate; (2-A) processing the coating film into a pattern corresponding to an antenna by photolithography; (2-B) processing the coating film into a pattern corresponding to a wiring line; (2-C) processing the coating film into a pattern corresponding to an electrode; (3-A) curing the pattern corresponding to an antenna into an antenna; (3-B) curing the pattern corresponding to a wiring line into a wiring line; and (3-C) curing the pattern corresponding to an electrode into an electrode.

Abstract: There is provided a rectifying element which is provided with an insulating base, (a) a pair of electrodes composed of a first electrode and a second electrode and (b) a semiconductor layer arranged between the pair of electrodes, wherein the components (a) and (b) are provided on a first surface of the insulating base. The rectifying element is configured such that the semiconductor layer (b) contains carbon nanotube composites each of which comprises a carbon nanotube and a conjugated polymer adhered onto at least a part of the surface of the carbon nanotube. The present invention provides a rectifying element having excellent rectifying properties by a simple process.

Abstract: Provided is a CNT composite capable of achieving both high detection sensitivity and specific detection when used as a sensor. The carbon nanotube composite includes an aggregation inhibitor (A) and a blocking agent (B) attached to at least a portion of a surface.

Abstract: A carbon nanotube composite has an organic substance attached to at least a part of a surface thereof. At least one functional group selected from a hydroxyl group, a carboxy group, an amino group, a mercapto group, a sulfo group, a phosphonic acid group, an organic or inorganic salt thereof, a formyl group, a maleimide group and a succinimide group is contained in at least a part of the carbon nanotube composite.

Abstract: An impurity-diffusing composition including (A) a polysiloxane represented by Formula (1) and (B) an impurity diffusion component. In the formula, R1 represents an aryl group having 6 to 15 carbon atoms, and a plurality of R1 may be the same or different. R2 represents any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an acyl group having 2 to 6 carbon atoms, and an aryl group having 6 to 15 carbon atoms, and a plurality of R2 may be the same or different. R3 and R4 each represent any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, and an acyl group having 2 to 6 carbon atoms, and a plurality of R3 and a plurality of R4 each may be the same or different. The ratio of n:m is 95:5 to 25:75.

Abstract: An impurity-diffusing composition including (A) a polysiloxane represented by Formula (1) and (B) an impurity diffusion component. In the formula, R1 represents an aryl group having 6 to 15 carbon atoms, and a plurality of R1 may be the same or different. R2 represents any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an acyl group having 2 to 6 carbon atoms, and an aryl group having 6 to 15 carbon atoms, and a plurality of R2 may be the same or different. R3 and R4 each represent any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, and an acyl group having 2 to 6 carbon atoms, and a plurality of R3 and a plurality of R4 each may be the same or different. The ratio of n:m is 95:5 to 25:75.

Abstract: A carbon nanotube composite has an organic substance attached to at least a part of a surface thereof. At least one functional group selected from a hydroxyl group, a carboxy group, an amino group, a mercapto group, a sulfo group, a phosphonic acid group, an organic or inorganic salt thereof, a formyl group, a maleimide group and a succinimide group is contained in at least a part of the carbon nanotube composite.

Abstract: There is provided a field effect transistor which comprises a gate insulating layer, a gate electrode, a semiconductor layer, a source electrode and a drain electrode. The gate insulating layer contains an organic compound that contains a silicon-carbon bond and a metal compound that contains a bond between a metal atom and an oxygen atom; and the metal atoms are contained in the gate insulating layer in an amount of 10 to 180 parts by weight with respect to 100 parts by weight of the total of carbon atoms and silicon atoms. This field effect transistor (FET) has high mobility and a low voltage of the threshold value, while being suppressed in leak current.

Abstract: A semiconductor device includes: a first MIS transistor of a first conductivity type having a first active region as a region of a semiconductor substrate surrounded by an element isolation region formed in an upper portion of the semiconductor substrate, a first gate insulating film having a first high dielectric film formed on the first active region, and a first gate electrode formed on the first gate insulating film; and a resistance element having a second high dielectric film formed on the element isolation region and a resistance layer made of silicon formed on the second high dielectric film. The first high dielectric film and the second high dielectric film include the same high dielectric material, and the first high dielectric film includes a first adjustment metal, but the second high dielectric film does not include the first adjustment metal.

Abstract: A semiconductor device includes: a first MIS transistor of a first conductivity type having a first active region as a region of a semiconductor substrate surrounded by an element isolation region formed in an upper portion of the semiconductor substrate, a first gate insulating film having a first high dielectric film formed on the first active region, and a first gate electrode formed on the first gate insulating film; and a resistance element having a second high dielectric film formed on the element isolation region and a resistance layer made of silicon formed on the second high dielectric film. The first high dielectric film and the second high dielectric film include the same high dielectric material, and the first high dielectric film includes a first adjustment metal, but the second high dielectric film does not include the first adjustment metal.