Abstract: A film forming method of forming a silicon carbide film on a substrate to be processed includes: forming the silicon carbide film on the substrate to be processed by loading a holder that holds the substrate to be processed into a processing container of a film forming apparatus to place the holder on a stage, and supplying a raw material gas into the processing container; and removing a reaction product, which has been adhered to a part other than the substrate to be processed during the forming the silicon carbide film, by loading a plate-shaped member having at least a surface formed by pyrolytic carbon into the processing container to place the plate-shaped member on the stage, and supplying a fluorine-containing gas into the processing container.

Abstract: A film forming apparatus for forming a silicon carbide film on a target substrate includes a substrate support on which the target substrate is placed, a gas supply mechanism configured to form a flow of a raw material gas along a direction perpendicular to a central axis of the substrate support from outside of the substrate support, and an induction coil configured to heat the target substrate. The gas supply mechanism supplies, in addition to a first Si-containing gas containing silicon without containing carbon and a first C-containing gas containing carbon without containing silicon, at least one of a second Si-containing gas having a thermal decomposition temperature higher than that of the first Si-containing gas and containing silicon without containing carbon and a second C-containing gas having a thermal decomposition temperature lower than that of the first C-containing gas and containing carbon without containing silicon, as the raw material gas.

Abstract: A film forming apparatus includes a rotation shaft which is connected to a rotation stage. The rotation stage is accommodated in an inner space of a susceptor, holds a plurality of workpieces, and rotates the workpieces around the central axis. A gas flow along a direction orthogonal to the central axis from an outside of the rotation stage is formed in the susceptor. A wall portion of the susceptor facing a lower surface of the rotation stage includes an intermediate area defined by a first circle larger than a minimum distance between the central axis and the plurality of placing areas and a second circle smaller than a maximum distance between the central axis and the plurality of placing areas. One or more of through holes are formed in the intermediate area.

Abstract: A film forming apparatus includes a rotation shaft which is connected to a rotation stage. The rotation stage is accommodated in an inner space of a susceptor, holds a plurality of workpieces, and rotates the workpieces around the central axis. A gas flow along a direction orthogonal to the central axis from an outside of the rotation stage is formed in the susceptor. A wall portion of the susceptor facing a lower surface of the rotation stage includes an intermediate area defined by a first circle larger than a minimum distance between the central axis and the plurality of placing areas and a second circle smaller than a maximum distance between the central axis and the plurality of placing areas. One or more of through holes are formed in the intermediate area.

Abstract: A disclosed film deposition apparatus includes a process chamber inside which a reduced pressure space is maintained; a gas supplying portion that supplies a film deposition gas to the process chamber; a substrate holding portion that is made of a material including carbon as a primary constituent and holds a substrate in the process chamber; a coil that is arranged outside the process chamber and inductively heats the substrate holding portion; and a thermal insulation member that covers the substrate holding portion and is arranged to be separated from the process chamber, wherein the reduced pressure space is separated into a film deposition gas supplying space to which the film deposition gas is supplied and a thermal insulation space defined between the substrate holding portion and the process chamber, and wherein a cooling medium is supplied to the thermal insulation space.

Abstract: A film deposition apparatus which comprises: a processing chamber having a space inside which serves as a vacuum space to which a film deposition gas is supplied; a substrate supporting unit which is disposed in the vacuum space and supports a substrate; a coil which inductively heats the substrate supporting unit to thereby form a film from the film deposition gas on the substrate and which has been divided into regions; and a coil control unit which controls the coil region by region.

Abstract: A film forming apparatus includes a processing chamber inside which a vacuum space is maintained and to which a film forming gas is supplied, a substrate supporting unit which is disposed inside the processing chamber and supports a substrate, and a heater which is made of a compound material comprising a high-melting point metal and carbon, is disposed inside the processing chamber, and heats the substrate.

Abstract: Disclosed is a film forming method using a film forming gas composed of a metal alkoxide wherein clean film formation suppressed in contamination of a target substrate to be processed is achieved by restraining aluminum or an aluminum alloy in the processing chamber from dissolving. Specifically disclosed is method for forming a thin film on a target substrate to be processed which is held in a processing chamber, and this method comprises a step for heating the target substrate and a step for supplying a film forming gas into the processing chamber. This method is characterized in that the film forming gas is composed of a metal alkoxide, the processing chamber is made of aluminum or an aluminum alloy, and a protective film composed of a nonporous anodic oxide film is formed on the inner wall surface of the processing chamber.

Abstract: A disclosed film deposition apparatus includes a process chamber inside which a reduced pressure space is maintained; a gas supplying portion that supplies a film deposition gas to the process chamber; a substrate holding portion that is made of a material including carbon as a primary constituent and holds a substrate in the process chamber; a coil that is arranged outside the process chamber and inductively heats the substrate holding portion; and a thermal insulation member that covers the substrate holding portion and is arranged to be separated from the process chamber, wherein the reduced pressure space is separated into a film deposition gas supplying space to which the film deposition gas is supplied and a thermal insulation space defined between the substrate holding portion and the process chamber, and wherein a cooling medium is supplied to the thermal insulation space.

Abstract: A film forming apparatus includes a processing chamber inside which a vacuum space is maintained and to which a film forming gas is supplied, a substrate supporting unit which is disposed inside the processing chamber and supports a substrate, and a heater which is made of a compound material comprising a high-melting point metal and carbon, is disposed inside the processing chamber, and heats the substrate.

Abstract: A film deposition apparatus which comprises: a processing chamber having a space inside which serves as a vacuum space to which a film deposition gas is supplied; a substrate supporting unit which is disposed in the vacuum space and supports a substrate; a coil which inductively heats the substrate supporting unit to thereby form a film from the film deposition gas on the substrate and which has been divided into regions; and a coil control unit which controls the coil region by region.

Abstract: Disclosed is a film forming method using a film forming gas composed of a metal alkoxide wherein clean film formation suppressed in contamination of a target substrate to be processed is achieved by restraining aluminum or an aluminum alloy in the processing chamber from dissolving. Specifically disclosed is method for forming a thin film on a target substrate to be processed which is held in a processing chamber, and this method comprises a step for heating the target substrate and a step for supplying a film forming gas into the processing chamber. This method is characterized in that the film forming gas is composed of a metal alkoxide, the processing chamber is made of aluminum or an aluminum alloy, and a protective film composed of a nonporous anodic oxide film is formed on the inner wall surface of the processing chamber.

Abstract: A device for loading a rivet and the like in a rivet holder belt which can continuously and securely load a large number of rivets and the like to the rivet holder belt includes: a hopper 11 for storing the rivets and the like at random; a chute 14 which is continuous from the hopper 11 to guide the rivets and the like that are contained in the hopper 11 to a delivery position of a rivet wheel 15; the rivet wheel 15 which rotates to receive the rivets and the like from the lower end of the chute 14 and store them one by one in each of plural grooves 29 that are formed in the rims of flange bodies; a pushing member 42 which is provided to face the circumference of the rivet wheel 15 to push the rivets and the like resting in the grooves 29 of the rivet wheel 15 into holding notches 37 of a rivet holder belt 36 that is guided along the rivet wheel 15; and a sprocket 35 which is provided in a trunk 27 of the rivet wheel 15 and feeds the rivet holder belt 36 while engaging with engagement holes 38 that are opened

Abstract: Process operations are performed for subjecting target substrates respectively to a semiconductor process, while a target substrate is placed on a worktable within a process chamber, and the worktable is heated by a temperature control member to heat the target substrate. The reflection coefficient within the process chamber is changed depending on deposition of a by-product, which is generated during the semiconductor process on the target substrate, within the process chamber. A parameter representing the reflection coefficient within the process chamber is measured, between the first and last ones of the process operations. The set temperature of the worktable used in the semiconductor process is adjusted, based on measured value of the parameter, during process operations performed after measuring the parameter. As a consequence, repeatability of the semiconductor process is improved.

Abstract: A device for loading a rivet and the like in a rivet holder belt which can continuously and securely load a large number of rivets and the like to the rivet holder belt includes: a hopper 11 for storing the rivets and the like at random; a chute 14 which is continuous from the hopper 11 to guide the rivets and the like that are contained in the hopper 11 to a delivery position of a rivet wheel 15; the rivet wheel 15 which rotates to receive the rivets and the like from the lower end of the chute 14 and store them one by one in each of plural grooves 29 that are formed in the rims of flange bodies; a pushing member 42 which is provided to face the circumference of the rivet wheel 15 to push the rivets and the like resting in the grooves 29 of the rivet wheel 15 into holding notches 37 of a rivet holder belt 36 that is guided along the rivet wheel 15; and a sprocket 35 which is provided in a trunk 27 of the rivet wheel 15 and feeds the rivet holder belt 36 while engaging with engagement holes 38 that are opened

Abstract: In a chip collecting apparatus for a tip dresser of the present invention, the outer periphery of a dressing body is covered with a chip pickup case for taking hold of chips generated while electrode tips are dressed. A chip discharge port provided at the bottom of the chip pickup case is normally closed with a lid. The chips generated during the dressing operation accumulate on the bottom of the chip pickup case. When collecting the chips, an operator carries a chip collection vessel, opens the lid of the chip pickup case, and collects the dropped chips into the chip collection vessel. Even when a plurality of chip dressers is mounted, the chips can be collected together into the one chip collection vessel.

Abstract: Process operations are performed for subjecting target substrates (W) respectively to a semiconductor process, while a target substrate (W) is placed on a worktable (24) within a process chamber (14), and the worktable (24) is heated by a temperature control member (50) to heat the target substrate (W). The reflection coefficient within the process chamber (14) is changed depending on deposition of a by-product, which is generated during the semiconductor process on the target substrate (W), within the process chamber (14). A parameter representing the reflection coefficient within the process chamber (14) is measured, between the first and last ones of the process operations. The set temperature of the worktable (24) used in the semiconductor process is adjusted, based on a measured value of the parameter, during process operations performed after measuring the parameter. As a consequence, repeatability of the semiconductor process is improved.

Abstract: In a chip collecting apparatus for a tip dresser of the present invention, the outer periphery of a dressing body is covered with a chip pickup case for taking hold of chips generated while electrode tips are dressed. A chip discharge port provided at the bottom of the chip pickup case is normally closed with a lid. The chips generated during the dressing operation accumulate on the bottom of the chip pickup case. When collecting the chips, an operator carries a chip collection vessel, opens the lid of the chip pickup case, and collects the dropped chips into the chip collection vessel. Even when a plurality of chip dressers is mounted, the chips can be collected together into the one chip collection vessel.