Abstract: A solid-state image pickup apparatus according to a first aspect of the present technology includes a photoelectric conversion section that generates and holds a charge in response to incident light, a transfer section that includes a V-NW transistor (Vertical Nano Wire transistor) and transfers the charge held in the photoelectric conversion section, and an accumulation section that includes a wiring layer connected to a drain of the transfer section including the V-NW transistor and accumulates the charge transferred by the transfer section. The present technology is applicable to a CMOS image sensor, for example.

Abstract: Light detection with reduced noise is disclosed. In one example, a comparator compares a signal with a reference signal and outputs a comparison result. The comparator includes a differential circuit that outputs a differential voltage between the signal and the reference signal, and an active load circuit electrically connected to the differential circuit, in which the active load circuit includes first and second transistors provided on a surface of a substrate, and the first and second transistors have channel regions extending in a direction substantially perpendicular to the surface of the substrate.

Abstract: A semiconductor device having high operation reliability that includes a semiconductor substrate, a light receiving section, a multiplier, a first electrode, a second electrode, and a resistor. The semiconductor substrate includes a pixel array section in which a plurality of pixels is disposed in an array. The light receiving section is inside the semiconductor substrate for each of the pixels, and generates carriers according to quantities of received light. The multiplier on a first surface of the semiconductor substrate for each of the pixels has a laminated structure of first and second conductivity type regions, and avalanche-multiplies the carriers generated in the light receiving section. The first electrode is electrically coupled to the multiplier. The second electrode is electrically coupled to the light receiving section. The resistor includes a polycrystalline semiconductor material and is in contact with the first electrode, while facing the first surface.

Abstract: A solid-state imaging device according to an embodiment of the present disclosure includes a mode-switching switch section that, in a first mode, electrically couples a first signal path to a photoelectric conversion section and electrically decouples a second signal path from the photoelectric conversion section, and that, in a second mode, electrically couples both of the first signal path and the second signal path to the photoelectric conversion section. At least the photoelectric conversion section is formed in a first substrate, and at least a second amplification transistor is formed in a second substrate, among the first substrate and the second substrate stacked on each other.

Abstract: A solid-state image pickup apparatus according to a first aspect of the present technology includes a photoelectric conversion section that generates and holds a charge in response to incident light, a transfer section that includes a V-NW transistor (Vertical Nano Wire transistor) and transfers the charge held in the photoelectric conversion section, and an accumulation section that includes a wiring layer connected to a drain of the transfer section including the V-NW transistor and accumulates the charge transferred by the transfer section. The present technology is applicable to a CMOS image sensor, for example.

Abstract: A solid-state image pickup apparatus according to a first aspect of the present technology includes a photoelectric conversion section that generates and holds a charge in response to incident light, a transfer section that includes a V-NW transistor (Vertical Nano Wire transistor) and transfers the charge held in the photoelectric conversion section, and an accumulation section that includes a wiring layer connected to a drain of the transfer section including the V-NW transistor and accumulates the charge transferred by the transfer section. The present technology is applicable to a CMOS image sensor, for example.

Abstract: To provide a semiconductor device with which it is possible to reduce parasitic capacitance between electrodes for a resistance element, and a method for manufacturing the semiconductor device. A semiconductor device according to the present disclosure includes: a substrate; a first resistance layer provided on the substrate; a first electrode in contact with a lower surface of the first resistance layer; and a second electrode in contact with an upper surface of the first resistance layer.

Abstract: A solid-state imaging device according to an embodiment of the present disclosure includes a mode-switching switch section that, in a first mode, electrically couples a first signal path to a photoelectric conversion section and electrically decouples a second signal path from the photoelectric conversion section, and that, in a second mode, electrically couples both of the first signal path and the second signal path to the photoelectric conversion section. At least the photoelectric conversion section is formed in a first substrate, and at least a second amplification transistor is formed in a second substrate, among the first substrate and the second substrate stacked on each other.

Abstract: An imaging device includes a first substrate including at least one sensor portion that converts light into electric charge, and a second substrate including a first portion of a readout circuit having at least one first transistor. The readout circuit outputs a pixel signal based on the electric charge. The imaging device includes a third substrate including a logic circuit that performs processing on the pixel signal. The first substrate, the second substrate, and the third substrate are stacked in that order.

Abstract: A solid-state image pickup apparatus according to a first aspect of the present technology includes a photoelectric conversion section that generates and holds a charge in response to incident light, a transfer section that includes a V-NW transistor (Vertical Nano Wire transistor) and transfers the charge held in the photoelectric conversion section, and an accumulation section that includes a wiring layer connected to a drain of the transfer section including the V-NW transistor and accumulates the charge transferred by the transfer section. The present technology is applicable to a CMOS image sensor, for example.

Abstract: The present technology relates to a solid-state image pickup apparatus and electronic equipment that makes it possible to suppress read noise. A solid-state image pickup apparatus according to a first aspect of the present technology includes a photoelectric conversion section that generates and holds a charge in response to incident light, a transfer section that includes a V-NW transistor (Vertical Nano Wire transistor) and transfers the charge held in the photoelectric conversion section, and an accumulation section that includes a wiring layer connected to a drain of the transfer section including the V-NW transistor and accumulates the charge transferred by the transfer section. The present technology is applicable to a CMOS image sensor, for example.

Abstract: A semiconductor device, an electronic apparatus, and a method of manufacturing a semiconductor device with reduced RTN influence regardless of gate electrode shape are disclosed. In one example, a semiconductor device includes a substrate having an element region and an element separating region, the element region including a source region and a drain region, and a channel region between the source and drain regions. The element separating region is arranged on both sides in a direction orthogonal to the source, channel and drain region arrangement direction. A gate insulating film is provided on the element region of the substrate from one side to another side of the element separating region. A gate electrode is provided on the gate insulating film, and includes an impurity having a different concentration in a boundary region as compared to a central region.

Abstract: The present disclosure relates to an information processing device, an information processing method, and a program that enable generation of stable PUFs. The information processing device includes: a reading unit that reads output data from a predetermined element a plurality of times; an average value calculation unit that calculates average values of the output data read by the reading unit; a median calculation unit that calculates the median of the average values calculated by the average value calculation unit; and a PUF generation unit that generates a physical unclonable function (PUF) by comparing the median with the average values. The predetermined element is an image sensor, and the reading unit reads output data from the image sensor when the image sensor is shielded from light. The present technology can be applied to imaging devices, for example.

Abstract: The present disclosure relates to an information processing device, an information processing method, and a program that enable generation of stable PUFs. The information processing device includes: a reading unit that reads output data from a predetermined element a plurality of times; an average value calculation unit that calculates average values of the output data read by the reading unit; a median calculation unit that calculates the median of the average values calculated by the average value calculation unit; and a PUF generation unit that generates a physical unclonable function (PUF) by comparing the median with the average values. The predetermined element is an image sensor, and the reading unit reads output data from the image sensor when the image sensor is shielded from light. The present technology can be applied to imaging devices, for example.

Abstract: A semiconductor device, an electronic apparatus, and a method of manufacturing a semiconductor device with reduced RTN influence regardless of gate electrode shape are disclosed. In one example, a semiconductor device includes a substrate having an element region and an element separating region, the element region including a source region and a drain region, and a channel region between the source and drain regions. The element separating region is arranged on both sides in a direction orthogonal to the source, channel and drain region arrangement direction. A gate insulating film is provided on the element region of the substrate from one side to another side of the element separating region. A gate electrode is provided on the gate insulating film, and includes an impurity having a different concentration in a boundary region as compared to a central region.

Abstract: The present technology relates to a solid-state image pickup apparatus and electronic equipment that makes it possible to suppress read noise. A solid-state image pickup apparatus according to a first aspect of the present technology includes a photoelectric conversion section that generates and holds a charge in response to incident light, a transfer section that includes a V-NW transistor (Vertical Nano Wire transistor) and transfers the charge held in the photoelectric conversion section, and an accumulation section that includes a wiring layer connected to a drain of the transfer section including the V-NW transistor and accumulates the charge transferred by the transfer section. The present technology is applicable to a CMOS image sensor, for example.

Abstract: Disclosed is a semiconductor device including a first semiconductor substrate and a first atom diffusion prevention portion, the first atom diffusion prevention portion being arranged at a part on the first semiconductor substrate and configured to prevent diffusion of an atom having a dangling bond terminating effect.

Abstract: Disclosed is a semiconductor device including a first semiconductor substrate and a first atom diffusion prevention portion, the first atom diffusion prevention portion being arranged at a part on the first semiconductor substrate and configured to prevent diffusion of an atom having a dangling bond terminating effect.

Abstract: By stably separating a melting location of a fuse (3) from conductive layers (5A, 5B), reliable melting of the fuse (3) is enabled. A fuse (3) including a fuse body (3A) and two pads (3Ba, 3Bb) connected by this and two conductive layers (5A, 5B) individually connected to the two pads (3Ba, 3Bb) are formed in a multilayer structure on a semiconductor substrate (1). A length of the fuse body (3A) is defined so that the melting location of the fuse (3) becomes positioned in the fuse body (3A) away from the region overlapped on the conductive layer (5A or 5B) when an electrical stress is applied between two conductive layers (5A, 5B) and the fuse (3) is melted.

Abstract: By stably separating a melting location of a fuse (3) from conductive layers (5A, 5B), reliable melting of the fuse (3) is enabled. A fuse (3) including a fuse body (3A) and two pads (3Ba, 3Bb) connected by this and two conductive layers (5A, 5B) individually connected to the two pads (3Ba, 3Bb) are formed in a multilayer structure on a semiconductor substrate (1). A length of the fuse body (3A) is defined so that the melting location of the fuse (3) becomes positioned in the fuse body (3A) away from the region overlapped on the conductive layer (5A or 5B) when an electrical stress is applied between two conductive layers (5A, 5B) and the fuse (3) is melted.