Abstract: An object of the present invention is to provide a rotary system capable of maintaining a distance of separation between two rotary machines and inhibiting vibration in an intermediate shaft connecting rotary shafts of the two rotary machines to each other. The rotary system includes a first rotary machine having a first rotary shaft, a second rotary machine having a second rotary shaft, and an intermediate shaft device having an intermediate shaft main body having a first end portion connected to the first rotary shaft and a second end portion connected to the second rotary shaft and rotating about an axis and a plurality of bearing devices slidably supporting the intermediate shaft main body.

Abstract: To provide a thin film transistor having an indium oxide-based semiconductor film which allows only a thin metal film on the semiconductor film to be selectively etched. A thin film transistor having a crystalline indium oxide semiconductor film which is composed mainly of indium oxide and contains a positive trivalent metal oxide.

Abstract: A multi-valve-type steam valve provided with a plurality of control valves widening a flow path as valve bodies are gradually separated from valve seats by valve shafts being driven in one direction and allowing steam to flow in by allowing the plurality of control valves to reach an open state in order, the multi-valve-type steam valve being configured such that at least the control valve reaching the open state first among the plurality of control valves have a smaller steam inflow amount during the driving in the one direction from a closed state than the other control valves.

Abstract: An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.

Abstract: Disclosed is a sputtering target having a good appearance, which is free from white spots on the surface. The sputtering target is characterized by being composed of an oxide sintered body containing two or more kinds of homologous crystal structures.

Abstract: A thin film transistor including an active layer, and has a field-effect mobility of 25 cm2/Vs or more, the active layer being formed of an oxide that includes In, Ga, and Zn in an atomic ratio that falls within the following region 1, region 2, or region 3, the region 1 being defined by 0.58?In/(In+Ga+Zn)?0.68 and 0.15<Ga/(In+Ga+Zn)?0.29, the region 2 being defined by 0.45?In/(In+Ga+Zn)<0.58 and 0.09?Ga/(In+Ga+Zn)<0.20, and the region 3 being defined by 0.45?In/(In+Ga+Zn)<0.58 and 0.20?Ga/(In+Ga+Zn)?0.27.

Abstract: A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8 ??(1) In/(In+Ga)=0.59 to 0.99 ??(2) Zn/(Ga+Zn)=0.29 to 0.99 ??(3).

Abstract: A composite oxide sintered body includes In, Zn, and Sn, and has a relative density of 90% or more, an average crystal grain size of 10 ?m or less, and a bulk resistance of 30 m?cm or less, the number of tin oxide aggregate particles having a diameter of 10 ?m or more being 2.5 or less per mm2 of the composite oxide sintered body.

Abstract: Disclosed is a sputtering target for an oxide semiconductor, comprising In, Ga, and Zn. Also disclosed are a process for producing the sputtering target, a thin film of an oxide semiconductor using a sputtering target, and a method for thin-film transistor formation. The sputtering target comprises an oxide sintered compact containing a compound having a homologous crystal structure represented by InGaO3(ZnO) and exhibits such an X-ray diffraction pattern that the proportion of peaks at 2?=62 to 63 degrees to the maximum peak of InGaO3(ZnO) is not more than 3%.

Abstract: A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8??(1) In/(In+X)=0.29 to 0.99??(2) Zn/(X+Zn)=0.29 to 0.99??(3).

Abstract: An oxide including indium (In), gallium (Ga) and zinc (Zn), wherein diffraction peaks are observed at positions corresponding to incident angles (2?) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuK? rays), and one of diffraction peaks observed at positions corresponding to incident angles (2?) of 30.6° to 32.0° and 33.8° to 35.8° is a main peak and the other is a sub peak.

Abstract: An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.

Abstract: A composite oxide sintered body includes In, Zn, and Sn, and has a relative density of 90% or more, an average crystal grain size of 10 ?m or less, and a bulk resistance of 30 m?cm or less, the number of tin oxide aggregate particles having a diameter of 10 ?m or more being 2.5 or less per mm2 of the composite oxide sintered body.

Abstract: A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8??(1) In/(In+X)=0.29 to 0.99??(2) Zn/(X+Zn)=0.29 to 0.99??(3).

Abstract: A thin film transistor including an active layer, and has a field-effect mobility of 25 cm2/Vs or more, the active layer being formed of an oxide that includes In, Ga, and Zn in an atomic ratio that falls within the following region 1, region 2, or region 3, the region 1 being defined by 0.58?In/(In+Ga+Zn)?0.68 and 0.15<Ga/(In+Ga+Zn)?0.29, the region 2 being defined by 0.45?In/(In+Ga+Zn)<0.58 and 0.09?Ga/(In+Ga+Zn)<0.20, and the region 3 being defined by 0.45?In/(In+Ga+Zn)<0.58 and 0.20?Ga/(In+Ga+Zn)?0.27.

Abstract: A sintered body includes an indium oxide crystal, and an oxide solid-dissolved in the indium oxide crystal, the oxide being oxide of one or more metals selected from the group consisting of aluminum and scandium, the sintered body having an atomic ratio “(total of the one or more metals)/(total of the one or more metals and indium)×100)” of 0.001% or more and less than 45%.

Abstract: An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.

Abstract: A composite oxide sintered body includes In2Ga2ZnO7 having a homologous crystal structure, and has a relative density of 90% or more, and an average crystal grain size of 10 ?m or less.

Abstract: Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film. Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide. The composition amounts (atomic %) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula: In/(In+Ga+Zn)<0.75.

Abstract: Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film. Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide. The composition amounts (atomic %) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula: In/(In+Ga+Zn)<0.