Patents by Inventor Hirokazu Kawashima

Hirokazu Kawashima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20100276688
    Abstract: A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8??(1) In/(In+X)=0.29 to 0.99??(2) Zn/(X+Zn)=0.29 to 0.99??(3).
    Type: Application
    Filed: December 19, 2008
    Publication date: November 4, 2010
    Applicant: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Hirokazu Kawashima, Kazuyoshi Inoue, Shigekazu Tomai, Masashi Kasami
  • THIN FILM TRANSISTOR HAVING CRYSTALLINE INDIUM OXIDE SEMICONDUCTOR FILM
    Publication number: 20100065835
    Abstract: To provide a thin film transistor having an indium oxide-based semiconductor film which allows only a thin metal film on the semiconductor film to be selectively etched. A thin film transistor having a crystalline indium oxide semiconductor film which is composed mainly of indium oxide and contains a positive trivalent metal oxide.
    Type: Application
    Filed: September 18, 2008
    Publication date: March 18, 2010
    Inventors: Kazuyoshi Inoue, Koki Yano, Shigekazu Tomai, Futoshi Utsuno, Masashi Kasami, Kenji Goto, Hirokazu Kawashima