Abstract: An ICP (Inductively Coupled Plasma) system is used as a plasma generating means. A CVD process gas is introduced within a vacuum vessel from a gas inlet nozzle, and is then converted into plasma by a high frequency electric field induced within the vacuum vessel by an electromagnetic wave from an antenna. A sample can be located at a position not to be exposed to plasma, and a decomposed product material produced from the CVD process gas by the plasma is deposited on the surface of the sample mounted on a sample stage, thus forming a film. A dielectric viewing port, the antenna and the sample are disposed along the same axial direction such that the directions of the planes thereof correspond to each other, so that the film formation on the surface of the sample within the vacuum vessel can be observed through the transparent dielectric viewing port.

Abstract: A dielectric TEM resonator, whose resonant frequency is adjustable in both directions after being incorporated in a circuit, is disclosed. A first dielectric TEM resonator comprises a metal member disposed near an open end of a resonator body and coupled to an inner or outer conductor of the resonator body. The resonant frequency is adjusted by adjusting a distance between the open end and the metal member. A dielectric material of a second dielectric TEM resonator is partially exposed, and a dielectric board for mounting the resonator body is also exposed in a corresponding part to the exposed part of the dielectric material. The exposed part of the dielectric board is partially covered with a metal plate. The resonant frequency is adjusted by adjusting the covered area.

Abstract: A facing material spray apparatus including a first tank for housing a facing material and regulating its concentration, first agitating means for agitating the facing material in the first tank, a second tank, for receiving the facing material from the first tank, provided in the vicinity of the first tank with its bottom positioned below the bottom of the first tank, second agitating means for agitating the facing material in the second tank, a connecting pipe for connecting the first and second tanks to each other and causing the facing material in the first tank to naturally flow into the second tank, a valve attached to the connecting pipe for opening and closing a facing material supply passage, a facing pump removably attached to the second tank for sucking the facing material in the second tank, a nozzle attached to the facing pump through a hose for spraying the sucked facing material on a mold, and a facing material receiving base provided in the vicinity of the second tank for receiving the facing

Abstract: A method of manufacturing a semiconductor device, includes the steps of: forming a first insulating layer (3), having at a surface thereof a concave area to which a contact hole is to be formed and a convex area, on a semiconductor substrate (7); forming a high resistance portion (4) including polycrystalline silicon, on the convex area; and forming a protection layer (2) including SiN on the first insulating layer and the high resistance portion. The method also includes the steps of: removing a portion of the formed protection layer at the concave area such that the removed portion includes an area to form the contact hole and is larger than the area to form the contact hole; and forming a second insulating layer (5) including at least boron as an impurity on the protection layer and the first insulating layer.