Abstract: A polymer powder includes a polyamide, wherein a melting point determined in differential scanning calorimetry is 190° C. or higher, a difference between the melting point and a melting onset temperature, which is defined in differential scanning calorimetry as a lowest temperature among temperatures at each of which a first temperature differential value of Heat Flow (W/g) observed between a peak top temperature of an endothermic peak, observed when 10 mg of powder is heated at a rate of 20° C./min from 30° C. in a nitrogen atmosphere, and a temperature point of ?50° C. from the peak top, becomes ?0.2 (W/g.° C.), is less than 30° C., and a D50 particle size is 1 ?m or more and 100 ?m or less.

Abstract: According to one embodiment, an image processing device capable of removing a horizontal streak that may show when a document is scanned and made into a file is provided. An image processing device according to one embodiment includes: an image processing unit configured to generate smoothing image data obtained by applying smoothing to image data, and save, as an image file, non-smoothing image data in which smoothing is not applied to the image data when a difference between the non-smoothing image data and the smoothing image data is equal to or greater than a threshold value, and the smoothing image data when the difference is smaller than the threshold value; and a storage unit configured to save the image file.

Abstract: According to the present invention, an additively manufactured ceramic core having both strength and collapsibility, and meltability and moreover having surface roughness improved is provided. The additively manufactured ceramic core disclosed herein is an additively manufactured ceramic core to be used as a core when manufacturing a metal casting and includes a central part corresponding to an additively manufactured fired body of a predetermined ceramic powder, a first layer covering at least a part of the central part, and a second layer formed on a surface layer of the first layer.

Abstract: According to one embodiment, an image processing device capable of removing a horizontal streak that may show when a document is scanned and made into a file is provided. An image processing device according to one embodiment includes: an image processing unit configured to generate smoothing image data obtained by applying smoothing to image data, and save, as an image file, non-smoothing image data in which smoothing is not applied to the image data when a difference between the non-smoothing image data and the smoothing image data is equal to or greater than a threshold value, and the smoothing image data when the difference is smaller than the threshold value; and a storage unit configured to save the image file.

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

Abstract: An inspection program causes a server to implement an image acquisition function to acquire an image, a determination function to determine whether or not the initial object is a genuine object based on at least a portion of a first object included in the image or at least a portion of a second object pertaining to the first object, and a certificate issuance function to issue an NFT certificate corresponding to the first object if the first object is determined to be a genuine object.

Abstract: According to one embodiment, an image processing device capable of removing a horizontal streak that may show when a document is scanned and made into a file is provided. An image processing device according to one embodiment includes: an image processing unit configured to generate smoothing image data obtained by applying smoothing to image data, and save, as an image file, non-smoothing image data in which smoothing is not applied to the image data when a difference between the non-smoothing image data and the smoothing image data is equal to or greater than a threshold value, and the smoothing image data when the difference is smaller than the threshold value; and a storage unit configured to save the image file.

Abstract: In a method of obtaining an angle of each joint of a 6-axis vertical articulated robot when a position and a posture of an end effector attached on a sixth axis are given, a predetermined amount of offset exists between a sixth axis and a fourth axis, and the method includes sequentially determining a point of interest, which is a point on a circumference of a circle having the predetermined amount as a radius, around a first intersection point, on a plane which includes the first intersection point which is an intersection point of the sixth axis and the fifth axis and the plane which is orthogonal to the sixth axis, calculating a second intersection point, which is an intersection point of the fourth axis and the third axis, when it is assumed that the point of interest is an intersection point of the fifth axis and the fourth axis, calculating an inner product value of a first vector directed from the calculated second intersection point to the point of interest and a second vector directed from the point

Abstract: The purpose of the present invention is to realize the display device having thin film transistors of the oxide semiconductor of stable characteristics. An example of the concrete structure is that: A display device having a substrate including a display area, plural pixels formed in the display area, the pixel includes a first thin film transistor having an oxide semiconductor film, a first insulating film made of a first silicon oxide on a first side of the oxide semiconductor film, a second insulating film made of a second silicon oxide on a second side of the oxide semiconductor film, wherein oxygen desorption amount per unit area from the first insulating film is larger than that from the second insulating film, when measured by TDS (Thermal Desorption Spectrometry) provided M/z=32 and a measuring range in temperature is from 100 centigrade to 500 centigrade.

Abstract: An evaluation system includes: an acquisition unit that acquires an image acquired by imaging an exterior of a vehicle; and an evaluation unit that derives and assigns an evaluation point for evaluating social credibility of a vehicle occupant of the vehicle on the basis of the image acquired by the acquisition unit.

Abstract: A non-combustion suction device includes: a mouthpiece having a suction port; a container configured to accommodate an aerosol source; and a heater including: a porous ceramic substrate that permits infiltration of the aerosol source; a glass layer at least in part on the porous ceramic substrate; a pair of electrode patterns; and a resistor pattern on the glass substrate, the resistor pattern connects the pair of electrode patterns to each other; and a power source connected to the pair of electrode patterns. The power source is configured to supply a power flow through the pair of electrode patterns to cause the resistor pattern to generate heat which atomize, into an aerosol, the aerosol source infiltrated in the porous ceramic substrate; and the porous ceramic substrate has a ratio of porosity to tortuosity of 21 or more.

Abstract: A non-combustion suction device includes: a mouthpiece having a suction port; a container configured to accommodate an aerosol source; and a heater including: a porous ceramic substrate that permits infiltration of the aerosol source; a glass layer at least in part on the porous ceramic substrate; a pair of electrode patterns; and a resistor pattern on the glass substrate, the resistor pattern connects the pair of electrode patterns to each other; and a power source connected to the pair of electrode patterns. The power source is configured to supply a power flow through the pair of electrode patterns to cause the resistor pattern to generate heat which atomize, into an aerosol, the aerosol source infiltrated in the porous ceramic substrate; and the porous ceramic substrate has a ratio of porosity to tortuosity of 21 or more.

Abstract: Provided is a robot equipped with two joint parts attached to an end of an arm in a coupled state. For example, in a joint part of a robot, a motor and a reduction gear are housed in a case, and an output-side member having a flange is fixed to the output shaft of the reduction gear. An opening that opens in the direction orthogonal to the axial direction of the output shaft of the reduction gear is formed in the case. A planar attachment face orthogonal to the opening direction of the opening is formed in the opening. The robot is provided with a plurality of biaxial joint units comprising two joint parts. In the robot, the attachment face of the case of one joint part constituting a biaxial joint unit is fixed to the flange of the other joint part either directly or via a coupling member.

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

Abstract: An internal combustion engine, includes: a cylinder block; a crankshaft rotatably supported in the cylinder block; an oil pan fastened to a lower end portion of the cylinder block; a chain case fastened to one end wall of the cylinder block in an axial direction of the crankshaft; a belt wound around a crank pulley provided on an end portion of the crankshaft protruding from the chain case and an accessory pulley provided on an engine accessory; and a tensioner contacting a back surface of the belt and applying a tension to the belt, wherein the tensioner includes multiple fastening portions, such that one of the fastening portions is fastened to at least one of the cylinder block and the chain case, and another one of the fastening portions is fastened to the oil pan.

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

Abstract: A base unit includes a support to support a motor, a bottom plate, and a wall. The bottom plate extends radially outward from the support. The wall extends upward from an outer periphery of the bottom plate, and includes a rectangular opening in planar view. Surfaces of the bottom plate and the wall include a cover surface covered with an electrodeposition coating film and an exposed surface in which a material of the base unit is exposed from the electrodeposition coating film. At least an upper end surface of the wall and a partial region of an inside wall surface of the wall continuous with the upper end surface are each the exposed surface.

Abstract: A transistor excellent in electrical characteristics and a method for manufacturing the transistor are provided. The transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel formation region over an insulating surface; a gate insulating film over the oxide semiconductor layer; a gate electrode overlapping with the channel formation region, over the gate insulating film; a source electrode in contact with the source region; and a drain electrode in contact with the drain region. The source region and the drain region include a portion having higher oxygen concentration than the channel formation region.

Abstract: The purpose of the present invention is to realize the display device having thin film transistors of the oxide semiconductor of stable characteristics. An example of the concrete structure is that: A display device having a substrate including a display area, plural pixels formed in the display area, the pixel includes a first thin film transistor having an oxide semiconductor film, a first insulating film made of a first silicon oxide on a first side of the oxide semiconductor film, a second insulating film made of a second silicon oxide on a second side of the oxide semiconductor film, wherein oxygen desorption amount per unit area from the first insulating film is larger than that from the second insulating film, when measured by TDS (Thermal Desorption Spectrometry) provided M/z=32 and a measuring range in temperature is from 100 centigrade to 500 centigrade.