Abstract: The present invention is to provide an industrial robot, which is placed in vacuum for use, capable of efficiently cooling down hand- or arm-driving motors which are arranged inside the arm in air. The industrial robot is provided with a motor for rotating a second arm unit with respect to a first arm unit, a motor for rotating a hand with respect to the second arm unit, a reduction gear for reducing the rotation of the motor and transmitting it to the second arm unit, and a reduction gear for reducing the rotation of the motor and transmitting it to the hand; the hand and the arm are placed in vacuum. The reduction gears and are coaxially arranged so that the center of rotation of the second arm unit with respect to the first arm unit coincides with the axial centers of the reduction gears. The interior space of the hollow first arm unit is kept at atmospheric pressure in which the motors and the reduction gears are arranged.

Abstract: The present invention is to provide an industrial robot, which is placed in vacuum for use, capable of efficiently cooling down hand- or arm-driving motors which are arranged inside the arm in air. The industrial robot is provided with a motor for rotating a second arm unit with respect to a first arm unit, a motor for rotating a hand with respect to the second arm unit, a reduction gear for reducing the rotation of the motor and transmitting it to the second arm unit, and a reduction gear for reducing the rotation of the motor and transmitting it to the hand; the hand and the arm are placed in vacuum. The reduction gears and are coaxially arranged so that the center of rotation of the second arm unit with respect to the first arm unit coincides with the axial centers of the reduction gears. The interior space of the hollow first arm unit is kept at atmospheric pressure in which the motors and the reduction gears are arranged.

Abstract: The purpose of the present invention is to form both LTPS TFT and Ply-Si TFT on a same substrate. The feature of the display device to realize the above purpose is that: a display device comprising: a substrate including a first TFT having an oxide semiconductor layer and a second TFT having a Poly-Si layer, an undercoat is formed on the substrate, the oxide semiconductor layer is formed on or above the undercoat, a first interlayer insulating film is formed on or above the oxide semiconductor layer, the Poly-Si layer is formed on or above the first interlayer insulating film.

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

Abstract: The purpose of the invention is to form a flexible display device where the substrate is made of resin, wherein the TFT can be annealed in high temperature; consequently, a reliability of the TFT is improved. The concrete measure is as follows. A display device having a pixel electrode and a TFT including a semiconductor layer on a substrate comprising: a source region of the semiconductor layer connects with a source electrode, a drain region of the semiconductor layer connects with a drain electrode; the pixel electrode connects with the source electrode; the drain electrode connects with a video signal line; a distance between the drain electrode and the substrate is smaller than a distance between the semiconductor and the substrate, the semiconductor layer is formed between the pixel electrode and the substrate.

Abstract: According to one embodiment, a semiconductor device includes a first insulating film, a first semiconductor layer formed of polycrystalline silicon, a second semiconductor layer formed of an oxide semiconductor, a second insulating film, a first gate electrode, a second gate electrode, a third insulating film formed of silicon nitride, and a protection layer. The protection layer is located between the second insulating film and the third insulating film, is opposed to the second semiconductor layer, and is formed of either an aluminum oxide or fluorinated silicon nitride.

Abstract: A motor control device may include a position command output means, a first subtraction means that calculates and outputs a position deviation, a position control means, a second subtraction means that calculates and outputs a position deviation, a speed control means that outputs a torque command, a limiter limits the level of the torque command, a motor drive means, and a voltage fluctuation detection means. When the voltage fluctuation detection means detects that the voltage of said power source has dropped below a predetermined reference level, either the position command output means varies the position command so as to reduce the rotational speed of the motor and/or said position control means limits said speed command to be output.

Abstract: The purpose of the invention is to improve reliability of the TFT of the oxide semiconductor. The invention is characterized as follows. A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor; a first gate insulating film is formed on the first oxide semiconductor, a gate electrode is formed on the first gate insulating film, an interlayer insulating film is formed over the gate electrode; the gate insulating film includes a first silicon oxide film, the gate electrode includes a first gate layer made of a second oxide semiconductor and a second gate layer made of metal or alloy; the interlayer insulating film has a first interlayer insulating film including a second silicon oxide film, and a second interlayer insulating film including a first aluminum oxide film on the first interlayer insulating film.

Abstract: According to one embodiment, a semiconductor device includes a first insulating film, a first semiconductor layer formed of polycrystalline silicon, a second semiconductor layer formed of an oxide semiconductor, a second insulating film, a first gate electrode, a second gate electrode, a third insulating film formed of silicon nitride, and a protection layer. The protection layer is located between the second insulating film and the third insulating film, is opposed to the second semiconductor layer, and is formed of either an aluminum oxide or fluorinated silicon nitride.

Abstract: A server for a digital signage control system communicates with a plurality of display devices, a first terminal, and a second terminal. The server further stores, for each display device, an identifier, attribute data, and owner data, and a plurality of content items. The server receives from the first terminal, a display request to display a content item on a display device having attributes that match display criteria included in the display request, transmits an approval request to the second terminal identified based on the display device owner data, and upon receiving from the second terminal approval to display the content item on the display device, store the content item in association with the identifier corresponding to the display device, and control the display device to display the content item in accordance with the display request.

Abstract: According to one embodiment, a sales management device includes an acquisition unit, a generation unit, and an output unit. The acquisition unit acquires result data representing a past sales result for each item about the commodity being handled for sale. The generation unit generates candidate data representing candidates for which handling is to be terminated based on the result data acquired by the acquisition unit in an identifiable manner. The output unit outputs the candidate data generated by the generation unit.

Abstract: A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a drain source electrode of the first TFT connects with the silicon (Si) via a first through hole, a drain source electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an ALO layer is formed on the metal films and the oxide semiconductor, the second source drain electrode and the metal films are connected via the second through hole formed in the AlO layer.

Abstract: The purpose of the present invention is to form both LTPS TFT and Ply-Si TFT on a same substrate. The feature of the display device to realize the above purpose is that: a display device comprising: a substrate including a first TFT having an oxide semiconductor layer and a second TFT having a Poly-Si layer, an undercoat is formed on the substrate, the oxide semiconductor layer is formed on or above the undercoat, a first interlayer insulating film is formed on or above the oxide semiconductor layer, the Poly-Si layer is formed on or above the first interlayer insulating film.

Abstract: According to one embodiment, a semiconductor device includes a first insulating film, a first semiconductor layer formed of polycrystalline silicon, a second semiconductor layer formed of an oxide semiconductor, a second insulating film, a first gate electrode, a second gate electrode, a third insulating film formed of silicon nitride, and a protection layer. The protection layer is located between the second insulating film and the third insulating film, is opposed to the second semiconductor layer, and is formed of either an aluminum oxide or fluorinated silicon nitride.

Abstract: The present invention is to provide an industrial robot, which is placed in vacuum for use, capable of efficiently cooling down hand- or arm-driving motors which are arranged inside the arm in air. The industrial robot is provided with a motor for rotating a second arm unit with respect to a first arm unit, a motor for rotating a hand with respect to the second arm unit, a reduction gear for reducing the rotation of the motor and transmitting it to the second arm unit, and a reduction gear for reducing the rotation of the motor and transmitting it to the hand; the hand and the arm are placed in vacuum. The reduction gears and are coaxially arranged so that the center of rotation of the second arm unit with respect to the first arm unit coincides with the axial centers of the reduction gears. The interior space of the hollow first arm unit is kept at atmospheric pressure in which the motors and the reduction gears are arranged.

Abstract: An inventory management system includes an image capturing device, a data storage, and a processing device. The processing device is configured to process image data of one or more images of an inventory space for items of a same type captured by the image capturing device, and to extract, from the captured images, an identification code that is unique to the items and placed behind the inventory space when viewed from the image capturing device. When the processing device is able to extract the entire identification code, the processing device causes an update of an inventory record stored in the data storage to indicate that the items are out of stock if the inventory record for the items are present.

Abstract: The present invention is to provide an industrial robot, which is placed in vacuum for use, capable of efficiently cooling down hand- or arm-driving motors which are arranged inside the arm in air. The industrial robot is provided with a motor for rotating a second arm unit with respect to a first arm unit, a motor for rotating a hand with respect to the second arm unit, a reduction gear for reducing the rotation of the motor and transmitting it to the second arm unit, and a reduction gear for reducing the rotation of the motor and transmitting it to the hand; the hand and the arm are placed in vacuum. The reduction gears and are coaxially arranged so that the center of rotation of the second arm unit with respect to the first arm unit coincides with the axial centers of the reduction gears. The interior space of the hollow first arm unit is kept at atmospheric pressure in which the motors and the reduction gears are arranged.

Abstract: The present invention is to provide an industrial robot, which is placed in vacuum for use, capable of efficiently cooling down hand- or arm-driving motors which are arranged inside the arm in air. The industrial robot is provided with a motor for rotating a second arm unit with respect to a first arm unit, a motor for rotating a hand with respect to the second arm unit, a reduction gear for reducing the rotation of the motor and transmitting it to the second arm unit, and a reduction gear for reducing the rotation of the motor and transmitting it to the hand; the hand and the arm are placed in vacuum. The reduction gears and are coaxially arranged so that the center of rotation of the second arm unit with respect to the first arm unit coincides with the axial centers of the reduction gears. The interior space of the hollow first arm unit is kept at atmospheric pressure in which the motors and the reduction gears are arranged.

Abstract: The present invention is to provide an industrial robot, which is placed in vacuum for use, capable of efficiently cooling down hand- or arm-driving motors which are arranged inside the arm in air. The industrial robot is provided with a motor for rotating a second arm unit with respect to a first arm unit, a motor for rotating a hand with respect to the second arm unit, a reduction gear for reducing the rotation of the motor and transmitting it to the second arm unit, and a reduction gear for reducing the rotation of the motor and transmitting it to the hand; the hand and the arm are placed in vacuum. The reduction gears and are coaxially arranged so that the center of rotation of the second arm unit with respect to the first arm unit coincides with the axial centers of the reduction gears. The interior space of the hollow first arm unit is kept at atmospheric pressure in which the motors and the reduction gears are arranged.

Abstract: To provide a highly reliable semiconductor device. The semiconductor device includes a first oxide layer over an insulating film; an oxide semiconductor layer over the first oxide layer; a gate insulating film over the oxide semiconductor layer; and a gate electrode over the gate insulating film. The first oxide layer contains indium. The oxide semiconductor layer contains indium and includes a channel formation region. The distance from the interface to the channel formation region is 20 nm or more, preferably 30 nm or more, further preferably 40 nm or more, still further preferably 60 nm or more.