Abstract: A semiconductor device adjusting an impedance level of an output buffer, includes a replica buffer circuit including a circuit configuration substantially identical to the output buffer, a counter circuit changing an impedance code to vary an impedance level of the replica buffer, a latch circuit temporarily holding the impedance code in response to a control signal, and an end-determining circuit producing the control signal in response to a lapse of a predetermined period from issuance of a calibration command, irrespective of a fact that the replica buffer has not yet reached a desirable impedance level.

Abstract: A method for diagnosing or testing for fibromyalgia with a specific peptide in the blood as an indicator, as well as a method for effectively evaluating or assessing a fibromyalgia drug with the peptide as an indicator. A method for diagnosing or testing for fibromyalgia or for evaluating or assessing a fibromyalgia drug, by subjecting a patient's serum to peptide analysis using as an indicator (biomarker) a peptide that demonstrates a specific expression amount in the blood of a fibromyalgia patient.

Abstract: A method for studying, determining or evaluating a pharmacological action of a test substance, the method including subjecting the brain tissue of an SART stressed animal administered with the test substance to an expression proteome analysis, where expression changes of NSF (N-ethylmaleimide sensitive fusion protein), which is or is not modified after translation, in the SART stressed animal administered with the test substance as compared with an SART stressed animal to which a test substance is not administered is used as an index.

Abstract: A calibration operation can be performed automatically at a semiconductor device without issuing a calibration command from a controller. Because a calibration operation is performed in response to a fact that the auto refresh command has been issued for a predetermined number of times, a periodical calibration operation can be secured and a read operation or a write operation is not requested from a controller during a calibration operation.

Abstract: To include a plurality of pad groups each including a first data I/O pad, a first power supply pad, a second data I/O pad, and a second power supply pad arranged in order in an X direction. The first data I/O pad is connected to a first data I/O buffer, and the second data I/O pad is connected to a second data I/O buffer. The first power supply pad supplies a first power supply potential to the first and second data I/O buffers, and the second power supply pad supplies a second power supply potential to the first and second data I/O buffers. The first data I/O pad included in each of the pad groups is adjacent to the second power supply pad included in other pad group or any one of a plurality of power supply pads not included in any one of the pad groups.

Abstract: To include an output terminal, unit buffers, and plural output-wiring paths that respectively connect the unit buffers and the output terminal. The output wiring paths have individual output wiring sections individually allocated to corresponding unit buffers. Unit buffers corresponding to these output wiring paths are common output wiring sections shared by the output wiring paths, and are connected to the output terminal without via a common output wiring section having a higher resistance value than those of the individual output wiring sections. Accordingly, an deviation of impedance due to a parasitic resistance between the output terminal and the unit buffers is suppressed.

Abstract: To include an AL counter that outputs a second ODT signal after counting a clock signal by an additive latency after receiving a first ODT signal, and a counter control circuit that controls the AL counter such that the second ODT signal having the same logic value as a logic value of the first ODT signal at a time of shifting from an asynchronous mode to a synchronous mode is output during a period until when at least the clock signal is input by an additive latency after the shifting. With this configuration, an interruption of an CDT operation can be prevented without separately providing a CKE counter. Therefore, the circuit scale can be reduced and the power consumption can be also reduced.

Abstract: To include a first memory cell array area and a second memory cell array area, a peripheral circuit area arranged between these memory cell array areas, a first pad row arranged between the first memory cell array area and the peripheral circuit area, and a second pad row arranged between the second memory cell array area and the peripheral circuit area. No peripheral circuit is arranged substantially between the first memory cell array area and the first pad row as well as between the second memory cell array area and the second pad row. With this arrangement, a memory cell array area and a predetermined pad can be connected within a shorter distance by using a wiring formed in an upper layer that has a lower electrical resistance, and a power potential can be stably supplied to the memory cell array area.

Abstract: A bit memory circuit of an antifuse element set includes two antifuse elements of which logical states are changed from an insulation state to a conductive state when a program voltage is applied. 1-bit data is represented by the logical states of the two antifuse elements. The two antifuse elements are collectively controlled by one decoder circuit. When writing data, the decoder circuit simultaneously performs insulation-breakdown on the two antifuse elements by simultaneously connecting the two antifuse elements to program voltage lines, respectively.

Abstract: A latency counter includes an input selecting circuit that selects one of a plurality of signal paths and supplies an internal command to the selected signal path, a shift circuit that switches a correspondence relation between the signal paths and a latch circuit, and an output selecting circuit that causes the internal command taken in the latch circuit to be output. The input selection circuit includes a timing control circuit allocated to each of the signal paths. The timing control circuit includes an SR latch circuit that is set by the internal command and is reset in response to deactivation of a corresponding count value. Therefore, it becomes possible to suppress shortening of an active period of the internal command that is output from the input selecting circuit.

Abstract: A latency counter includes an input selecting circuit that selects one of a plurality of signal paths and supplies an internal command to the selected signal path, a shift circuit that switches a correspondence relation between the signal paths and a latch circuit, and an output selecting circuit that causes the internal command taken in the latch circuit to be output. The input selection circuit includes a timing control circuit allocated to each of the signal paths. The timing control circuit includes an SR latch circuit that is set by the internal command and is reset in response to deactivation of a corresponding count value. Therefore, it becomes possible to suppress shortening of an active period of the internal command that is output from the input selecting circuit.

Abstract: A latency counter includes a counter circuit and a point-shift FIFO circuit. Latch circuits included in the point-shift FIFO circuit are divided into n groups having wired-OR outputs, and an output of a latch circuit that belongs to a group different from a current group is selected each time a count value is updated. Therefore, an output load is reduced compared to a case where outputs of all the latch circuits are bundled in a wired-OR connection. Further, because there is no need to provide a reset circuit corresponding to each wired-OR wire, it is possible to achieve a reduction in the circuit scale. Furthermore, because a waveform of a signal flowing in the wired-OR wire does not change in a state where internal commands are continuously created in n clock cycles, it is possible to achieve a reduction in the power consumption.

Abstract: A calibration circuit includes: a replica buffer that drives a calibration terminal; a pre-emphasis circuit connected in parallel to the replica buffer; and an up-down counter that changes impedances of the replica buffer and the pre-emphasis circuit. A replica control circuit causes the replica buffer to conduct based on an impedance code, and a pre-emphasis control circuit causes the pre-emphasis circuit to conduct in an initial stage of a conducting period of the replica buffer. Thereby, even when an external resistor is shared among a plurality of semiconductor devices, for example, a voltage appearing in the calibration terminal can be stabilized at a higher speed.

Abstract: To provide a latency counter capable of increasing the signal quality of outputted internal commands. There is provided a point-shift FIFO circuit controlled by count values of a counter circuit. The point-shift FIFO circuit includes: a first wired-OR circuit that combines outputs of first latch circuits; a second wired-OR circuit that combines outputs of second latch circuits; a gate circuit that combines outputs of the first and second wired-OR circuits; and reset circuits that reset the first and second wired-OR circuits, respectively, based on the count value of the counter circuit. According to the present invention, as compared to a case that outputs of all the latch circuits are wired-OR connected, output loads are more reduced. Thus, a high signal quality can be obtained.

Abstract: A semiconductor device includes first, second and third terminals respectively receiving first, second and third input signals from outside, first, second and third input buffers respectively coupled to the first, second and third terminals, the first, second and third input buffers producing first, second and third buffered signals responsive to the first, second and third input signals, respectively, and first and second gate circuits respectively coupled to the first and second input buffers, the first and second gate circuits coupled to the third input buffer in common, the first and second gate circuits respectively driving output nodes thereof in response to the first and second buffered signals when the third buffered signal is activated, and each of the first and second gate circuits holding the output nodes thereof at a fixed level irrelatively to the first and second buffered signals when the third buffered signal is inactivated.

Abstract: In a calibration control circuit, a first clock gate circuit restricts passage of reference update clocks during a calibration period so as to stop a first one of the reference update clocks and supplies the restricted reference update clocks as first update clocks CLK1 to both a hit determination circuit and a second clock gate circuit. The second clock gate circuit 110 passes through the first update clocks CLK1 until reception of a hit signal from the hit determination circuit and delivers second update clocks CLK2 to an up/down counter 106. The up/down counter 106 is operated by the second update clocks CLK2. With this structure, the second update clocks used for adjustment steps can be increased in number during the calibration period.

Abstract: To include a first replica buffer that has substantially the same circuit configuration as a pull-up circuit which constitutes an output buffer and a second replica buffer that has substantially the same circuit configuration as a pull-down circuit which constitutes the output buffer. When a first calibration command ZQCS is issued, either a control signal ACT1 or ACT2 is activated, and a calibration operation is performed for either the first replica buffer or the second replica buffer. When a second calibration command ZQCL is issued, both of the control signals ACT1, ACT2 are activated and the calibration operation is performed for both the first replica buffer and the second replica buffer.

Abstract: To decrease the circuit scale necessary for the calibration of the output circuit and to decrease the time required for the calibration operation. The invention includes a first output buffer and a second output buffer that are connected to a data pin, and a calibration circuit that is connected to a calibration pin. The first output buffer and the second output buffer include plural unit buffers. The unit buffers have mutually the same circuit structures. With this arrangement, the impedances of the first output buffer and the second output buffer can be set in common, based on the calibration operation using the calibration circuit. Consequently, both the circuit scale necessary for the calibration operation and the time required for the calibration operation can be decreased.

Abstract: A semiconductor device includes a latency setting circuit setting the latency, an input command circuit outputting a normal-phase (reverse-phase) command signal obtained by capturing an input command signal using a normal-phase (reverse-phase) clock, first and second counter circuits each including latch circuits sequentially shifting the normal-phase (reverse-phase) command signal based on the normal-phase (reverse-phase) clock, a selector circuit controlling a signal path so that the normal-phase (reverse-phase) command signal is transmitted through the first (second) counter circuit when an even latency is set and the normal-phase (reverse-phase) command signal is transmitted so as to be shifted from the first (second) counter circuit to the second (first) counter circuit when an odd latency is set, and a control circuit controlling so that the latch circuits of the first (second) counter circuit are activated in response to the input command signal and stopped after an operation period is elapsed.

Abstract: A memory module includes a plurality of data connectors provided along a long side of a module substrate, a plurality of memory chips and a plurality of data register buffers mounted on the module substrate, a data line that connects the data connectors and the data register buffers, and data lines that connect the data register buffers and the memory chips. Each of the data register buffers and a plurality of data connectors and a plurality of memory chips corresponding to the data register buffer are arranged side by side in a direction of a short side of the module substrate. According to the present invention, because each line length of the data lines is considerably shortened, it is possible to realize a considerably high data transfer rate.