Abstract: This free-cutting copper alloy comprises 76.0-78.7% Cu, 3.1-3.6% Si, 0.40-0.85% Sn, 0.05-0.14% P, and at least 0.005% to less than 0.020% Pb, with the remainder comprising Zn and inevitable impurities. The composition satisfies the following relations: 75.0?f1=Cu+0.8×Si?7.5×Sn+0.5×Pb?78.2; 60.0?f2=Cu?4.8×Si—0.8×Sn?P+0.5×Pb?61.5; and 0.09?f3=P/Sn?0.30. The area percentage (%) of respective constituent phases satisfies the following relations: 30???65; 0???2.0; 0???0.3; 0???2.0; 96.5?f4=?+?; 99.4?f5=?+?+?+?; 0?f6=?+??3.0; and 35?f7=1.05×?+6×?1/2+0.5×??70. ? phase is present in ? phase, the long side of the ? phase is at most 50 ?m, and the long side of the ? phase is at most 25 ?m.

Abstract: This high-strength free-cutting copper alloy comprises 75.4-78.0% Cu, 3.05-3.55% Si, 0.05-0.13% P and 0.005-0.070% Pb, with the remainder comprising Zn and inevitable impurities, wherein the amount of Sn existing as inevitable impurities is at most 0.05%, the amount of Al is at most 0.05%, and the total amount of Sn and Al is at most 0.06%. The composition satisfies the following relations: 78.0?f1=Cu+0.8×Si+P+Pb?80.8; and 60.2?f2=Cu?4.7×Si?P+0.5×Pb?61.5. The area percentage (%) of respective constituent phases satisfies the following relations: 29???60; 0???0.3; ?=0; 0???1.0; 98.6?f3=?+?; 99.7?f4=?+?+?+?; 0?f5=?+??1.2; and 30?f6=?+6×?1/2+0.5×??62. The long side of the ? phase is at most 25 ?m, the long side of the ? phase is at most 20 ?m, and the ? phase is present within the ? phase.

Abstract: According to the present invention, there is provided a group III nitride semiconductor substrate (free-standing substrate 30) that is formed of group III nitride semiconductor crystals. Both exposed first and second main surfaces in a relationship of top and bottom are semipolar planes. A variation coefficient of an emission wavelength of each of the first and second main surfaces, which is calculated by dividing a standard deviation of an emission wavelength by an average value of the emission wavelength, is 0.05% or less in photoluminescence (PL) measurement in which mapping is performed in units of an area of 1 mm2 by emitting helium-cadmium (He—Cd) laser, which has a wavelength of 325 nm and an output of 10 mW or more and 40 mW or less, at room temperature. In a case where devices are manufactured over the free-standing substrate 30, variations in quality among the devices are suppressed.

Abstract: A terminal base includes a straight, strip plate-shaped bus bar having a first end and a second end, the first end having a bolt insertion hole, a bolt configured to be inserted into the bolt insertion hole for electrical connection, the bolt having a head, a housing into which the bus bar is inserted from the second end of the bus bar such that the second end extends out of the housing, an O-ring configured to be mounted on the bus bar at a middle of the bus bar to seal a gap between the bus bar and the housing and a holder configured to regulate a movement of the O-ring. The holder is provided on the bus bar. The holder includes a bolt holding portion configured to hold an outer periphery of the head of the bolt over an entire circumference of the outer periphery of the head.

Abstract: A mold includes: a first molding surface configured to form a lens surface of a scanning lens being elongated in a main-scanning direction; and a first coolant passage, which is disposed within the mold and through which a coolant to control the temperature of the first molding surface flows, wherein the first coolant passage includes: a first passage portion corresponding to a first lens portion which is a portion protruding most in an optical axis direction in the lens surface; and a second passage portion corresponding to a second lens portion which is a portion retreated most in the optical axis direction in the lens surface, and the second passage portion is located to be closer to the second lens portion than a virtual plane, which passes through the first passage portion and is orthogonal to the optical axis direction.

Abstract: This high-strength free-cutting copper alloy comprises 75.4-78.0% Cu, 3.05-3.55% Si, 0.05-0.13% P and 0.005-0.070% Pb, with the remainder comprising Zn and inevitable impurities, wherein the amount of Sn existing as inevitable impurities is at most 0.05%, the amount of Al is at most 0.05%, and the total amount of Sn and Al is at most 0.06%. The composition satisfies the following relations: 78.0?f1=Cu+0.8×Si+P+Pb?80.8; and 60.2?f2=Cu?4.7×Si?P+0.5×Pb?61.5. The area percentage (%) of respective constituent phases satisfies the following relations: 29???60; 0???0.3; ?=0; 0???1.0; 98.6?f3=?+?; 99.7?f4=?+?+?+?; 0?f5=?+??1.2; and 30?f6=?+6×?1/2+0.5×??62. The long side of the ? phase is at most 25 ?m, the long side of the ? phase is at most 20 ?m, and the ? phase is present within the ? phase.

Abstract: There is provided a group III nitride semiconductor substrate (free-standing substrate (30)) that is formed of a group III nitride semiconductor crystal and has a thickness of 300 ?m or more and 1000 ?m or less. Both exposed first and second main surfaces in a relationship of top and bottom are semipolar planes. A difference in a half width of an X-ray rocking curve (XRC) measured by making X-rays incident on each of the first and second main surfaces in parallel to an m axis of the group III nitride semiconductor crystal is 500 arcsec or less.

Abstract: There is provided a method of manufacturing a group III nitride semiconductor substrate including: a fixing step S10 of fixing a base substrate, which includes a group III nitride semiconductor layer having a semipolar plane as a main surface, to a susceptor; a first growth step S11 of forming a first growth layer by growing a group III nitride semiconductor over the main surface of the group III nitride semiconductor layer in a state in which the base substrate is fixed to the susceptor using an HVPE method; a cooling step S12 of cooling a laminate including the susceptor, the base substrate, and the first growth layer; and a second growth step S13 of forming a second growth layer by growing a group III nitride semiconductor over the first growth layer in a state in which the base substrate is fixed to the susceptor using the HVPE method.

Abstract: A ground terminal and a wire harness include a conductor connecting portion to which a linear conductor is connected, a plurality of fastening portions each of which is connected to the conductor connecting portion, is formed into a planar shape, and is capable of being fastened to a grounding surface through a fastening member in a state of facing the grounding surface, and a deformation portion that connects the fastening portions and is deformed more easily than the fastening portions. As a result, the ground terminal and the wire harness provide an effect of being properly fastened to the grounding surface.

Abstract: A method for manufacturing a group III nitride semiconductor substrate includes a preparation step S10 for preparing a group III nitride semiconductor substrate having a sapphire substrate having a semipolar plane as a main surface, and a group III nitride semiconductor layer positioned over the main surface, in which a <0002> direction of the sapphire substrate and a <10-10> direction of the group III nitride semiconductor layer do not intersect at right angles in a plan view in a direction perpendicular to the main surface, and a growth step S20 for epitaxially growing a group III nitride semiconductor over the group III nitride semiconductor layer.

Abstract: A touch sensor substrate including a base material having a first surface, and electrodes each having a bottom surface positioned on the first surface, a top surface opposite to the bottom surface, and side surfaces connecting the bottom and top surfaces, each of the electrodes having a blackened layer formed on the side surfaces and at least one of the bottom and top surfaces. The blackened layer has a surface resistivity of less than 1 ?/square.

Abstract: An optical transmission method wavelength-multiplexing and transmitting multiple channels including data. The data are composed of data areas independent between the channels and data areas non-independent between the channels. Data patterns of the data areas non-independent between the channels are variable. The data patterns of the data areas non-independent between the channels are set so that in time periods of the non-independent data areas on an optical transmission section, a time period during which polarization states of the multiple channels are correlated in the optical transmission section has a length such that an error rate is less than or equal to a threshold value, the error rate being determined from a temporal distribution of bit errors obtained from a result of error decision after demodulation in an optical receiver.

Abstract: An intermittent failure diagnostic system that, in addition to a failure detection of a conventional failure threshold, appropriately sets an intermittent diagnostic threshold at which a probability of false-positive detection of the intermittent failure is equal to a probability of false-positive detection of the conventional failure, more accurately detects the intermittent failure, suppresses an unprepared system down and improves the reliability, may be used with an electric power steering apparatus.

Abstract: A stent able to minimize occurrences of strain and stress concentration in a drug coat layer upon expansive deformation of the stent in a radial direction to avoid the possibility of the drug separating from the stent, includes a stent body and a drug coating layer coated on the outside surface of the stent body so that the thickness of the drug coating layer gradually decreases toward a bent portion of the stent.

Abstract: A ground terminal and a wire harness include a conductor connecting portion to which a linear conductor is connected, a plurality of fastening portions each of which is connected to the conductor connecting portion, is formed into a planar shape, and is capable of being fastened to a grounding surface through a fastening member in a state of facing the grounding surface, and a deformation portion that connects the fastening portions and is deformed more easily than the fastening portions. As a result, the ground terminal and the wire harness provide an effect of being properly fastened to the grounding surface.

Abstract: A touch sensor substrate including a base material having a first surface, and electrodes each having a bottom surface positioned on the first surface, a top surface opposite to the bottom surface, and side surfaces connecting the bottom and top surfaces, each of the electrodes having a blackened layer formed on the side surfaces and at least one of the bottom and top surfaces. The blackened layer has a surface resistivity of less than 1 ?/square.

Abstract: Provided is a vehicle travel control apparatus, mounted on a host vehicle, which performs travel control of the host vehicle on the basis of a positional relationship between the host vehicle and a preceding vehicle traveling ahead of the host vehicle, the vehicle travel control apparatus including a millimeter wave sensor that acquires target data of the preceding vehicle by receiving a reflected wave of an emitted electromagnetic wave; and an ECU that determines the presence or absence of a preceding vehicle traveling directly ahead of the host vehicle on the basis of the target data acquired by the millimeter wave sensor and that performs acceleration and deceleration control of the host vehicle on the basis of the presence or absence of the preceding vehicle.

Abstract: An optical transmission method wavelength-multiplexes and transmits multiple channels. Data transmitted on the wavelength-multiplexed channels are composed of data areas independent between the channels and data areas non-independent between the channels. Data patterns of the data areas non-independent between the channels are variable. This reduces the time period during which polarization states of the multiple channels are correlated, thereby reducing non-linear optical effects occurring between the channels and reducing deterioration in signal quality at a receiving end.

Abstract: A stent to be implanted in a living body is formed substantially as a tube having a form in which plural wavy annular members are arranged adjacent to each other in the axial direction of the stent, with the axially adjacent wavy annular members connected to each other. The stent possesses an outer diameter whose dimension is so set that the stent is insertable into a lumen inside a living body, and is expandable when a force spreading radially from the inside of the tube is applied. The wavy annular member has parallel straight-line portions extending parallel to the axis of the stent before and after the stent expands. The stent has connection portions each connecting ends of the parallel straight-line portions of the adjacent wavy annular members to each other.

Abstract: An intermittent failure diagnostic system that, in addition to a failure detection of a conventional failure threshold, sets an intermittent diagnostic threshold inside of the failure threshold or sets the intermittent diagnostic threshold in an arbitrary scope with a detection resolving-power unit, securely detects the intermittent failure in a wide region by using a statistics way, suppresses an unprepared system down and improves the reliability and to an electric power steering apparatus provided with the same.