Abstract: A electric storage device that includes a device body having a first end face that has a first portion and a second portion, and second end face that has a third portion and a fourth portion. The second portion is inclined relative to the first portion, and the fourth portion is inclined relative to the third portion. A first electrode film extends from the first portion to the second portion, and a second electrode film extends from the third portion to the fourth portion.

Abstract: A electric storage device that includes a device body having a first end face that has a first portion and a second portion, and second end face that has a third portion and a fourth portion. The second portion is inclined relative to the first portion, and the fourth portion is inclined relative to the third portion. A first electrode film extends from the first portion to the second portion, and a second electrode film extends from the third portion to the fourth portion.

Abstract: A highly-reliable electrical storage device element and electrical storage device, in each of which on predetermined regions of predetermined end surfaces of a laminate forming an electrical storage component, sprayed end surface electrodes each having a high bond strength to the laminate are provided.

Abstract: A power storage device that includes an electrolyte retaining layer between a first internal electrode and a second internal electrode. The electrolyte retaining layer retains an electrolyte. The first internal electrode has a first current collector and a first active material layer. The first active material layer is on a surface of the first current collector, which is closer to the second internal electrode. The second internal electrode has a second current collector and a second active material layer. The second active material layer is on a surface of the second current collector, which is closer to the first internal electrode. At least one of the electrolyte retaining layer, first active material layer, and second active material layer is exposed at the first and second end surfaces of the power storage device.

Abstract: A power storage device that includes an electrolyte retaining layer between a first internal electrode and a second internal electrode. The electrolyte retaining layer retains an electrolyte. The first internal electrode has a first current collector and a first active material layer. The first active material layer is on a surface of the first current collector, which is closer to the second internal electrode. The second internal electrode has a second current collector and a second active material layer. The second active material layer is on a surface of the second current collector, which is closer to the first internal electrode. At least one of the electrolyte retaining layer, first active material layer, and second active material layer is exposed at the first and second end surfaces of the power storage device.

Abstract: An electronic component device having a first sealing frame formed on a main substrate and a second sealing frame formed on a cover substrate, the first and second sealing frames being composed of a Ni film. A bonding section constituted by a Ni—Bi alloy is formed between the first and second sealing frames. For example, a Bi layer is formed on the first sealing frame, and then the first sealing frame and the second sealing frame are heated at a temperature of 300° C. for at least 10 seconds while applying pressure in the direction in which the first sealing frame and the second sealing frame are in close contact with each other, and thus the bonding section, which bonds the first sealing frame to the second sealing frame, is formed.

Abstract: In a method for producing an electronic component device, a heat bonding step is performed in a state in which low melting point metal layers including low melting point metals including, for example, Sn as the main component, are arranged to sandwich, in the thickness direction, a high melting point metal layer including a high melting point metal including, for example, Cu as the main component, which is the same or substantially the same as high melting point metals defining first and second conductor films to be bonded. In order to generate an intermetallic compound of the high melting point metal and the low melting point metal, the distance in which the high melting point metal is to be diffused in each of the low melting point metal layers is reduced. Thus, the time required for the diffusion is reduced, and the time required for the bonding is reduced.

Abstract: A highly-reliable electrical storage device element and electrical storage device, in each of which on predetermined regions of predetermined end surfaces of a laminate forming an electrical storage component, sprayed end surface electrodes each having a high bond strength to the laminate are provided.

Abstract: An electronic component device having a first sealing frame formed on a main substrate and a second sealing frame formed on a cover substrate, both of which are composed of a Ni film. A bonding section bonds the first sealing frame to the second sealing frame. For example, a Bi layer is formed on the first sealing frame and an Au layer is formed on the second sealing frame, and then the first sealing frame and the second sealing frame are heated at a temperature of 300° C. for 10 seconds while applying pressure in the direction in which the first sealing frame and the second sealing frame are close contact with each other to form the bonding section. The bonding section is constituted by a mixed layer predominantly composed of a mixed alloy of a Ni—Bi—Au ternary alloy and Au2Bi.

Abstract: An electronic component device having a first sealing frame formed on a main substrate and a second sealing frame formed on a cover substrate, the first and second sealing frames being composed of a Ni film. A bonding section constituted by a Ni—Bi alloy is formed between the first and second sealing frames. For example, a Bi layer is formed on the first sealing frame, and then the first sealing frame and the second sealing frame are heated at a temperature of 300° C. for at least 10 seconds while applying pressure in the direction in which the first sealing frame and the second sealing frame are in close contact with each other, and thus the bonding section, which bonds the first sealing frame to the second sealing frame, is formed.

Abstract: An electronic component device having a first sealing frame formed on a main substrate and a second sealing frame formed on a cover substrate, the first and second sealing frames being composed of a Ni film. A bonding section constituted by a Ni—Bi alloy is formed between the first and second sealing frames. For example, a Bi layer is formed on the first sealing frame, and then the first sealing frame and the second sealing frame are heated at a temperature of 300° C. for at least 10 seconds while applying pressure in the direction in which the first sealing frame and the second sealing frame are in close contact with each other, and thus the bonding section, which bonds the first sealing frame to the second sealing frame, is formed.

Abstract: A triaxial acceleration sensor which has a structure including a cover joined to a substrate including a mechanically operable functional unit to be sealed, is adapted in such a way that the joined state can be reliably obtained so as to not interfere with a displacement of the functional unit. A sealing frame is made of a heated polyimide on a periphery of an upper main surface of a substrate provided with a functional unit, and a sealing layer made of a polyimide is formed over an entire lower main surface of a cover. For integrating the substrate and the cover so as to seal the functional unit, the sealing frame and the sealing layer are joined to each other by heating and pressurizing the sealing frame and the sealing layer at a temperature that is about 50° C. to about 150° C. higher than a glass transition temperature of the polyimide while bringing the sealing frame and the sealing layer into contact with each other.

Abstract: In a method for producing an electronic component device, a heat bonding step is performed in a state in which low melting point metal layers including low melting point metals including, for example, Sn as the main component, are arranged to sandwich, in the thickness direction, a high melting point metal layer including a high melting point metal including, for example, Cu as the main component, which is the same or substantially the same as high melting point metals defining first and second conductor films to be bonded. In order to generate an intermetallic compound of the high melting point metal and the low melting point metal, the distance in which the high melting point metal is to be diffused in each of the low melting point metal layers is reduced. Thus, the time required for the diffusion is reduced, and the time required for the bonding is reduced.

Abstract: A triaxial acceleration sensor which has a structure including a cover joined to a substrate including a mechanically operable functional unit to be sealed, is adapted in such a way that the joined state can be reliably obtained so as to not interfere with a displacement of the functional unit. A sealing frame is made of a heated polyimide on a periphery of an upper main surface of a substrate provided with a functional unit, and a sealing layer made of a polyimide is formed over an entire lower main surface of a cover. For integrating the substrate and the cover so as to seal the functional unit, the sealing frame and the sealing layer are joined to each other by heating and pressurizing the sealing frame and the sealing layer at a temperature that is about 50° C. to about 150° C. higher than a glass transition temperature of the polyimide while bringing the sealing frame and the sealing layer into contact with each other.

Abstract: A triaxial acceleration sensor which has a structure including a cover joined to a substrate including a mechanically operable functional unit to be sealed, is adapted in such a way that the joined state can be reliably obtained so as to not interfere with a displacement of the functional unit. A sealing frame is made of a heated polyimide on a periphery of an upper main surface of a substrate provided with a functional unit, and a sealing layer made of a polyimide is formed over an entire lower main surface of a cover. For integrating the substrate and the cover so as to seal the functional unit, the sealing frame and the sealing layer are joined to each other by heating and pressurizing the sealing frame and the sealing layer at a temperature that is about 50° C. to about 150° C. higher than a glass transition temperature of the polyimide while bringing the sealing frame and the sealing layer into contact with each other.

Abstract: An electronic component device having a first sealing frame formed on a main substrate and a second sealing frame formed on a cover substrate, both of which are composed of a Ni film. A bonding section bonds the first sealing frame to the second sealing frame. For example, a Bi layer is formed on the first sealing frame and an Au layer is formed on the second sealing frame, and then the first sealing frame and the second sealing frame are heated at a temperature of 300° C. for 10 seconds while applying pressure in the direction in which the first sealing frame and the second sealing frame are close contact with each other to form the bonding section. The bonding section is constituted by a mixed layer predominantly composed of a mixed alloy of a Ni—Bi—Au ternary alloy and Au2Bi.

Abstract: An electronic component device having a first sealing frame formed on a main substrate and a second sealing frame formed on a cover substrate, the first and second sealing frames being composed of a Ni film. A bonding section constituted by a Ni—Bi alloy is formed between the first and second sealing frames. For example, a Bi layer is formed on the first sealing frame, and then the first sealing frame and the second sealing frame are heated at a temperature of 300° C. for at least 10 seconds while applying pressure in the direction in which the first sealing frame and the second sealing frame are in close contact with each other, and thus the bonding section, which bonds the first sealing frame to the second sealing frame, is formed.

Abstract: A triaxial acceleration sensor which has a structure including a cover joined to a substrate including a mechanically operable functional unit to be sealed, is adapted in such a way that the joined state can be reliably obtained so as to not interfere with a displacement of the functional unit. A sealing frame is made of a heated polyimide on a periphery of an upper main surface of a substrate provided with a functional unit, and a sealing layer made of a polyimide is formed over an entire lower main surface of a cover. For integrating the substrate and the cover so as to seal the functional unit, the sealing frame and the sealing layer are joined to each other by heating and pressurizing the sealing frame and the sealing layer at a temperature that is about 50° C. to about 150° C. higher than a glass transition temperature of the polyimide while bringing the sealing frame and the sealing layer into contact with each other.

Abstract: In a method for producing an electronic component device, a heat bonding step is performed in a state in which low melting point metal layers including low melting point metals including, for example, Sn as the main component, are arranged to sandwich, in the thickness direction, a high melting point metal layer including a high melting point metal including, for example, Cu as the main component, which is the same or substantially the same as high melting point metals defining first and second conductor films to be bonded. In order to generate an intermetallic compound of the high melting point metal and the low melting point metal, the distance in which the high melting point metal is to be diffused in each of the low melting point metal layers is reduced. Thus, the time required for the diffusion is reduced, and the time required for the bonding is reduced.

Abstract: The game device of the present invention comprises a first image processing means for generating an image captured from the view of a virtual camera which moves together with a virtual player on landforms in a game world and displaying it as a main screen, a second image processing means for generating an image on which a destination for the virtual player can be designated and displaying it as a map image, a destination designation means for designating a destination for the virtual player, route determination means for detecting the position of a destination for the virtual player designated on the map screen, determining the shortest route connecting the detection position of the destination and the present position of the virtual player, and determining a movement route for the virtual player, and a movement control means for allowing the virtual player to move to the destination along the movement route.