Patents by Inventor Hiroki Inoue

Hiroki Inoue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11227543
    Abstract: An electronic device capable of efficiently recognizing a handwritten character is provided. The electronic device includes a first circuit, a display portion, and a touch sensor. The first circuit includes a neural network. The display portion includes a flexible display. The touch sensor has the function of outputting an input handwritten character as image information to the first circuit. The first circuit has the function of analyzing the image information and converting the image information into character information, and a function of displaying an image including the character information on the display portion. The analysis is performed by inference through the use of the neural network.
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: January 18, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shintaro Harada, Yoshiyuki Kurokawa, Takeshi Aoki, Yuki Okamoto, Hiroki Inoue, Koji Kusunoki, Yosuke Tsukamoto, Katsuki Yanagawa, Kei Takahashi, Shunpei Yamazaki
  • Publication number: 20220010835
    Abstract: A sliding component includes a dynamic pressure generation groove configured for generating dynamic pressure on a sliding surface, which groove includes an introduction port formed in one end side of the groove in a circumferential direction and which is open to a sealing target fluid H side, a throttle portion communicating with the introduction port and having a narrowed flow path, and a lead-out port formed on the other end side of the groove, which communicates with the throttle portion and which is open to the sealing target fluid side.
    Type: Application
    Filed: November 22, 2019
    Publication date: January 13, 2022
    Inventors: Hiroki INOUE, Yuta NEGISHI, Yuki MAETANI, Sayaka MIYAZAKI
  • Publication number: 20220006309
    Abstract: A semiconductor device with reduced power consumption is provided. The semiconductor device includes a node ND1, a node ND2, a resistor, a capacitor, and a comparison circuit. The resistor is electrically connected in series between one of a positive electrode and a negative electrode of a secondary battery and a first terminal. The resistor has a function of converting current flowing between the one of the positive electrode and the negative electrode of the secondary battery and the first terminal into a first voltage. The first voltage is added to a voltage of the node ND2 through the capacitor. The comparison circuit has a function of comparing a voltage of the node ND1 and the voltage of the node ND2. The comparison circuit outputs a signal that notifies detection of overcurrent when the voltage of the node ND2 is higher than the voltage of the node ND1.
    Type: Application
    Filed: November 12, 2019
    Publication date: January 6, 2022
    Inventors: Kei TAKAHASHI, Yuki OKAMOTO, Minato ITO, Takahiko ISHIZU, Hiroki INOUE, Shunpei YAMAZAKI
  • Patent number: 11215699
    Abstract: A lamp housing (143) houses a light source (141). A front sensor housing (152) houses a front LiDAR sensor (151). A supporting unit (17) supports the lamp housing (143) and the front sensor housing (152). The lamp housing (143) and the front sensor housing (152) are arranged in a direction corresponding to a left-right direction of a vehicle, when viewed from a direction corresponding to a front-rear direction of the vehicle. A maximum dimension (UD1) of the lamp housing (143) in an up-down direction of the vehicle is smaller than a maximum dimension (UD2) of the front sensor housing (152) in the same direction.
    Type: Grant
    Filed: December 27, 2017
    Date of Patent: January 4, 2022
    Assignee: KOITO MANUFACTURING CO., LTD.
    Inventors: Takeshi Masuda, Hiroki Inoue, Yusuke Kasaba, Misako Kamiya, Teruaki Yamamoto, Minami Katagiri
  • Patent number: 11205669
    Abstract: A solid-state imaging device with high productivity and improved dynamic range is provided. In the imaging device including a photoelectric conversion element having an i-type semiconductor layer, functional elements, and a wiring, an area where the functional elements and the wiring overlap with the i-type semiconductor in a plane view is preferably less than or equal to 35%, further preferably less than or equal to 15%, and still further preferably less than or equal to 10% of the area of the i-type semiconductor in a plane view. Plural photoelectric conversion elements are provided in the same semiconductor layer, whereby a process for separating the respective photoelectric conversion elements can be reduced. The respective i-type semiconductor layers in the plural photoelectric conversion elements are separated by a p-type semiconductor layer or an n-type semiconductor layer.
    Type: Grant
    Filed: May 27, 2015
    Date of Patent: December 21, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuki Okamoto, Yoshiyuki Kurokawa, Hiroki Inoue, Takuro Ohmaru
  • Publication number: 20210391604
    Abstract: A novel semiconductor device that is highly convenient or reliable is provided. The semiconductor device includes a sensor unit, a first memory unit, a second memory unit, and a determination unit. The sensor unit supplies a sensor signal, the first memory unit retains the sensor signal, the second memory unit retains standard data and allowable difference information, the determination unit compares the sensor signal with the standard data, and the determination unit supplies a control signal in the case where a difference between the sensor signal and the standard data exceeds the allowable difference information.
    Type: Application
    Filed: November 13, 2019
    Publication date: December 16, 2021
    Inventors: Takanori MATSUZAKI, Takayuki IKEDA, Munehiro KOZUMA, Ryota TAJIMA, Hiroki INOUE
  • Publication number: 20210384751
    Abstract: A battery control circuit with a novel structure, a battery protection circuit with a novel structure, and a power storage device including either of the battery circuits are provided. The power storage device includes a first circuit portion, a second circuit portion, a third circuit portion, and a secondary battery; the first circuit portion has a function of controlling charging of the secondary battery; the first circuit portion has a function of supplying the start time and the end time of the charging of the secondary battery to the third circuit portion; the second circuit portion has functions of generating a first voltage and a first current and supplying them to the third circuit portion; the third circuit portion has a function of generating a second voltage by charging the first current in a capacitor; and the third circuit portion has a function of comparing the first voltage and the second voltage.
    Type: Application
    Filed: October 16, 2019
    Publication date: December 9, 2021
    Inventors: Kei TAKAHASHI, Takayuki IKEDA, Takanori MATSUZAKI, Munehiro KOZUMA, Hiroki INOUE, Ryota TAJIMA, Yohei MOMMA, Mayumi MIKAMI, Kazutaka KURIKI, Shunpei YAMAZAKI
  • Patent number: 11177299
    Abstract: A solid-state imaging device with high productivity and improved dynamic range is provided. In the imaging device including a photoelectric conversion element having an i-type semiconductor layer, functional elements, and a wiring, an area where the functional elements and the wiring overlap with the i-type semiconductor in a plane view is preferably less than or equal to 35%, further preferably less than or equal to 15%, and still further preferably less than or equal to 10% of the area of the i-type semiconductor in a plane view. Plural photoelectric conversion elements are provided in the same semiconductor layer, whereby a process for separating the respective photoelectric conversion elements can be reduced. The respective i-type semiconductor layers in the plural photoelectric conversion elements are separated by a p-type semiconductor layer or an n-type semiconductor layer.
    Type: Grant
    Filed: May 27, 2015
    Date of Patent: November 16, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuki Okamoto, Yoshiyuki Kurokawa, Hiroki Inoue, Takuro Ohmaru
  • Publication number: 20210321495
    Abstract: A heating coil includes a plurality of loop portions disposed coaxially along an axis, a first lead portion and a second lead portion which electrically connect to a power source, and a connection portion which connects the plurality of loop portions, the first lead portion, and the second lead portion in series.
    Type: Application
    Filed: August 21, 2019
    Publication date: October 14, 2021
    Applicant: NETUREN CO., LTD.
    Inventors: Hidehiro YASUTAKE, Takashi HORINO, Hiroki INOUE, Hiroaki KINOSHITA
  • Patent number: 11143232
    Abstract: In an exemplary embodiment of a sliding component, a sliding face S is provided with a first fluid-side negative pressure generation mechanism 12 including a first negative pressure generation groove 13, and is provided with a second fluid-side negative pressure generation mechanism 14 including second negative pressure generation grooves 15 located on the second-fluid side of the first fluid-side negative pressure generation mechanism 12, and is further provided with a dynamic pressure generation mechanism 10 including dynamic pressure generation grooves 11 on at least one of the first-fluid side and the second-fluid side of the first fluid-side negative pressure generation mechanism 12 and the second fluid-side negative pressure generation mechanism 14, and the first negative pressure generation groove 13 is isolated from the second-fluid side by a land R, and the second negative pressure generation grooves 15 are isolated from the first-fluid side by a land R.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: October 12, 2021
    Assignee: EAGLE INDUSTRY CO., LTD.
    Inventors: Yuta Negishi, Sayaka Kosugi, Hiroki Inoue, Hideyuki Inoue, Takeshi Hosoe, Yuichiro Tokunaga
  • Publication number: 20210294367
    Abstract: An output gain of a latch circuit is increased. The latch circuit includes a first circuit, a second circuit, and first to fourth transistors. The latch circuit includes a first input/output terminal and a second input/output terminal. The first circuit and the second circuit have a function of a current source. In the case where the third transistor is off and the fourth transistor is on, the latch circuit is supplied with a first input signal supplied to the first input/output terminal and a second input signal supplied to the second input/output terminal. In the case where the third transistor is on and the fourth transistor is off, an inverted signal of the first input signal is output to the first input/output terminal of the latch circuit, and an inverted signal of the second input signal is output to the second input/output terminal of the latch circuit. The first circuit and the second circuit increase the output gain of the latch circuit.
    Type: Application
    Filed: July 29, 2019
    Publication date: September 23, 2021
    Inventors: Kei TAKAHASHI, Yuto YAKUBO, Hiroki INOUE
  • Patent number: 11079783
    Abstract: A power supply circuit according to the present invention includes, for example, an output circuit arranged to generate a stabilized voltage from an input voltage using an output transistor, a filter circuit arranged to smooth the stabilized voltage using a resistor and a capacitor so as to generate an output voltage, and a charging circuit arranged to supply charging current to the capacitor without the charging current being passed through the resistor.
    Type: Grant
    Filed: February 25, 2020
    Date of Patent: August 3, 2021
    Assignee: Rohm Co., Ltd.
    Inventor: Hiroki Inoue
  • Patent number: 11053974
    Abstract: In an exemplary embodiment, a sliding component includes a pair of sliding parts 3 and 5 sliding relative to each other, with a high-pressure gas present on one side of the pair of sliding parts 3 and 5 and a low-pressure liquid on the other side. At least the sliding part 5 has a sliding face S provided with positive pressure generation mechanisms 10 each having a positive pressure generation groove 11, and provided with an annular deep groove 14 on the high-pressure gas side. The annular deep groove 14 is isolated from the high-pressure gas side by a land R, and is connected to the low-pressure liquid side through radial deep grooves 13. The sliding component is capable of fulfilling both conflicting conditions of sealing and lubrication, with a gas on the high-pressure fluid side and a liquid on the low-pressure fluid side.
    Type: Grant
    Filed: December 1, 2017
    Date of Patent: July 6, 2021
    Assignee: EAGLE INDUSTRY CO., LTD.
    Inventors: Yuta Negishi, Hiroki Inoue, Yuki Maetani, Takeshi Hosoe, Hideyuki Inoue
  • Patent number: 11052553
    Abstract: An oscillatory linear actuator includes an electromagnet that changes a magnetic field periodically, a first movable body, a second movable body, a holder, and a coupling spring. The first movable body is disposed on one side in the first direction of the electromagnet, includes a permanent magnet, and acts on a target object. The permanent magnet reciprocates in a second direction intersecting with the first direction by the electromagnet. The second movable body is juxtaposed to the first movable body and reciprocates in the second direction. The holder holds the first and second movable bodies to provide space between the first and second movable bodies and the electromagnet and to allow the first and second movable bodies to move in the second direction. The coupling spring is disposed on one side in the first direction of the holder and couples the first movable body and the second movable body.
    Type: Grant
    Filed: April 13, 2018
    Date of Patent: July 6, 2021
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Tomoaki Murakami, Noboru Kobayashi, Hiroki Inoue, Masashi Moriguchi
  • Patent number: 10996696
    Abstract: A power supply circuit that outputs via an output terminal an output voltage based on an input voltage applied to an input terminal includes: an inserted transistor of an N-channel depletion type inserted between the input terminal and an internal supply power terminal; and a regulator configured to generate the output voltage by using as a supply voltage a voltage applied to the internal supply power terminal. The gate of the inserted transistor is connected to the output terminal.
    Type: Grant
    Filed: April 6, 2020
    Date of Patent: May 4, 2021
    Assignee: Rohm Co., Ltd.
    Inventor: Hiroki Inoue
  • Patent number: 10964700
    Abstract: To provide a semiconductor device that can reduce power consumption and retain data for a long time and a memory device including the semiconductor device. The semiconductor device includes a word line divider, a memory cell, a first wiring, and a second wiring. The word line divider is electrically connected to the first wiring and the second wiring. The memory cell includes a first transistor with a dual-gate structure. A first gate of the first transistor is electrically connected to the first wiring, and a second gate of the first transistor is electrically connected to the second wiring. The word line divider supplies a high-level potential or a low-level potential to the first wiring and supplies a predetermined potential to the second wiring, whereby a threshold voltage of the first transistor is changed. With such a configuration, a semiconductor device that can reduce power consumption and retain data for a long time is driven.
    Type: Grant
    Filed: May 28, 2020
    Date of Patent: March 30, 2021
    Inventors: Fumika Akasawa, Hiroki Inoue, Takashi Nakagawa, Yoshiyuki Kurokawa
  • Publication number: 20210036193
    Abstract: A light-emitting device includes: a light-emitting element including a first surface provided as a light extraction surface, a second surface opposite to the first surface, a plurality of third surfaces between the first surface and the second surface, and a positive electrode and a negative electrode at the second surface; a light-transmissive member disposed at the first surface; and a bonding member disposed between the light-emitting element and the light-transmissive member and covering from the first surface to the plurality of third surfaces of the light-emitting element to bond the light-emitting element and the light-transmissive member. The bonding member is made of a resin that contains nanoparticles. The nanoparticles have a particle diameter of 1 nm or more and 30 nm or less and a content of 10 mass % or more and 20 mass % or less.
    Type: Application
    Filed: July 30, 2020
    Publication date: February 4, 2021
    Applicant: NICHIA CORPORATION
    Inventors: Toshifumi IMURA, Masafumi KURAMOTO, Hiroki INOUE
  • Patent number: 10875409
    Abstract: A power transmission control device includes a first rotation shaft, a first power source to adjust rotation speed of the first rotation shaft, a second rotation shaft interlocked with an axle, a first switching mechanism to connect/disconnect switching between the first and second rotation shafts, a third rotation shaft, a second power source to adjust rotation speed of the third rotation shaft, and a second switching mechanism to connect/disconnect switching between the third rotation shaft and the second rotation shaft. At least one switching mechanism of the first switching mechanism and the second switching mechanism is a dog clutch type, and reliably and stably performs the connection switching thereof. A control stores information on a rotation phase of the first/third rotation shafts. At least one of the first/second switching mechanisms is held in a connected state, and the rotation phase is adjusted based on stored information at the connection switching.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: December 29, 2020
    Assignee: AISIN AW CO., LTD.
    Inventors: Hideto Manta, Hiroki Inoue, Mitsutoshi Kamiya
  • Publication number: 20200343245
    Abstract: Provided is a storage device that achieves both retention operation at high temperatures and high-speed operation at low temperatures. The storage device includes a driver circuit and a plurality of memory cells, and the memory cell includes a transistor and a capacitor; the transistor includes a metal oxide in a channel formation region. In the case where the transistor includes a first gate and a second gate, the driver circuit has a function of driving the second gate, and the driver circuit outputs a potential corresponding to the temperature of the storage device or the temperature of an environment where the storage device is placed to the second gate in a period during which the memory cell retains data.
    Type: Application
    Filed: November 22, 2018
    Publication date: October 29, 2020
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Hajime KIMURA, Munehiro KOZUMA, Takeshi AOKI, Hiroki INOUE, Shintaro HARADA, Daisuke MATSUBAYASHI
  • Publication number: 20200335471
    Abstract: The present invention provides a die bonding material containing the following component (A) and a solvent and having a refractive index (nD) at 25° C. of 1.41 to 1.43 and a thixotropic index of 2 or more, a light-emitting device including an adhesive member derived from the die bonding material, and a method for producing the light-emitting device. The die bonding material of the present invention is preferably used for fixing a light emitting element at a predetermined position. Component (A): a curable polysilsesquioxane compound having a repeating unit represented by the following formula (a-1) and satisfying predetermined requirements related to 29Si-NMR and mass average molecular weight (Mw) R1-D-SiO3/2 ??(a-1) [wherein R1 represents a fluoroalkyl group represented by a compositional formula: CmH(2m-n+1)Fn; m represents an integer of 1 to 10, and n represents an integer of 2 to (2m+1); and D represents a linking group (excluding an alkylene group) for connecting R1 and Si, or a single bond].
    Type: Application
    Filed: April 17, 2020
    Publication date: October 22, 2020
    Applicant: LINTEC Corporation
    Inventors: Akiko UMEDA, Manabu MIYAWAKI, Hidekazu NAKAYAMA, Hiroki INOUE, Toshifumi IMURA