Abstract: To provide a semiconductor device that can reduce power consumption and retain data for a long time and a memory device including the semiconductor device. The semiconductor device includes a word line divider, a memory cell, a first wiring, and a second wiring. The word line divider is electrically connected to the first wiring and the second wiring. The memory cell includes a first transistor with a dual-gate structure. A first gate of the first transistor is electrically connected to the first wiring, and a second gate of the first transistor is electrically connected to the second wiring. The word line divider supplies a high-level potential or a low-level potential to the first wiring and supplies a predetermined potential to the second wiring, whereby a threshold voltage of the first transistor is changed. With such a configuration, a semiconductor device that can reduce power consumption and retain data for a long time is driven.

Abstract: An oscillatory linear actuator includes an electromagnet that changes a magnetic field periodically, a first movable body, a second movable body, a holder, and a coupling spring. The first movable body is disposed on one side in the first direction of the electromagnet, includes a permanent magnet, and acts on a target object. The permanent magnet reciprocates in a second direction intersecting with the first direction by the electromagnet. The second movable body is juxtaposed to the first movable body and reciprocates in the second direction. The holder holds the first and second movable bodies to provide space between the first and second movable bodies and the electromagnet and to allow the first and second movable bodies to move in the second direction. The coupling spring is disposed on one side in the first direction of the holder and couples the first movable body and the second movable body.

Abstract: An oscillatory linear actuator includes: an output movable element which is reciprocated by a periodically varying magnetic field and performs work on an object; and a vibration absorbing movable element which is reciprocated at a phase opposite to a phase of the output movable element and reduces vibration of the oscillatory linear actuator. The output movable element includes: a first driver which generates a thrust force which is reciprocated by a magnetic field; a work part which performs work on the object at a predetermined distance away from the first driver; a shaft which connects the work part and the first driver; a first weight opposite to the work part relative to the first driver; and a weight support which connects the work part and the first weight.

Abstract: An oscillatory linear actuator includes an electromagnetic core block including an electromagnet (electromagnetic part), and a magnetic block that holds permanent magnets so that the permanent magnets face the electromagnet with a predetermined space in between. The electromagnetic core block integrally includes a core, a coil bobbin, and a base, the core and the coil bobbin forming the electromagnet, and the base holding the core and the coil bobbin. The magnetic block includes the permanent magnets and a frame that holds the permanent magnets so as to allow the permanent magnets to oscillate freely and holds the electromagnetic core block. The frame has a guide portion that guides the electromagnetic core block to adjust a positional relation of the permanent magnets and the electromagnet, and the base is fixed to the frame inside the guide portion.

Abstract: An oscillatory linear actuator includes: an output movable element which is reciprocated by a periodically varying magnetic field and performs work on an object; and a vibration absorbing movable element which is reciprocated at a phase opposite to a phase of the output movable element and reduces vibration of the oscillatory linear actuator. The vibration absorbing movable element is lighter in weight than the output movable element.

Abstract: A linear power supply circuit includes a first output transistor of a P-channel type or pnp type which is connected between an input terminal to which an input voltage is input and an output terminal from which an output voltage is output; a first differential amplifier configured to amplify a difference between the output voltage or a feedback voltage according to the output voltage and a predetermined first reference voltage and output a first amplification voltage; a second differential amplifier configured to amplify a difference between the input voltage or a first monitor voltage according to the input voltage and the output voltage or a second monitor voltage according to the output voltage and output a second amplification voltage; and a first driver configured to generate a control voltage of the first output transistor according to the first amplification voltage and the second amplification voltage.

Abstract: An outer blade for a hair cutting device, the outer blade being mounted to an end of a main body of the hair cutting device, includes bars that each have a shape of a rectangular stick and are arranged at predetermined intervals. The outer blade also includes, at a skin-surface-contact-side first face of each of the bars, an agent holding part configured to hold an agent that is a substance having a predetermined effect on a skin surface, the agent holding part being a surrounded recess heading from the skin-surface-contact-side first face of the bar toward an inner-blade-side second face of the bar. Thus, the agent such as foam or gel can be held by the agent holding part at the skin-surface-side face of the outer blade, and friction can be reduced between the outer blade and the skin surface by the agent held by the agent holding part.

Abstract: A smart system locks a door of a vehicle when there is a user's instruction to lock the door when a first portable device in which first identification information is stored is outside the vehicle and a second portable device in which second identification information is stored is inside the vehicle, and controls the power supply state from a normal state to a power supply continuation state in which power continues to be supplied only to a predetermined power supply continuation device in the vehicle.

Abstract: A level shifter including a transistor that can be formed through the same process as a display portion is provided. A semiconductor device serves as a level shifter including transistors having the same conductivity type. The semiconductor device includes a so-called MIS capacitor in which metal, an insulator, and a semiconductor are stacked as a capacitor for boosting an input signal. Since the MIS capacitor is used, the gate-source voltage of a transistor for generating an output signal can be increased. Thus, boosting operation to generate the output signal can be performed more surely.

Abstract: A pleated filter cartridge includes a pleated filter that includes a filter base having folds that repeatedly form mountains and valleys and having a tubular shape whose axial direction is a ridge line direction of the folds, and fixing members disposed on an upper bottom portion and a lower bottom portion of the pleated filter. The pleated filter includes a reinforcing structure for folds in the mountains which are projecting portions projecting toward the outside of the tubular shape. The reinforcing structure includes both a resin-reinforcing structure including, as a reinforcing body, a resin that covers a surface of the base in the folds or a resin that is allowed to permeate in the base in the folds, and a member-reinforcing structure in which reinforcing members provided separately from the filter base are disposed so as to extend along the folds.

Abstract: A direct resistance heating simulation method is provided. In this method, a welding region and its peripheral region of steel sheets to be welded by a pair of electrodes are divided into a plurality of elements. A coupled analysis is performed such that a temperature, a metal structure, stress and strain at each element are determine in a mutually associated manner based on Joule loss obtained through a current analysis and a magnetic field analysis for each element. The coupled analysis is repeated to predict an effect of one or more parameters, including at least one of a frequency, a magnitude and an application time of electric current to be applied to the electrodes, a cooling time, a pressure applied from the electrodes to the steel sheets and a shape of the electrodes, on welding quality after a post-heating by direct resistance heating and to improve weld strength.

Abstract: A multi-axis motor control system includes a host control apparatus, motors, motor control apparatuses that drives the motors and each includes circuitry that acquires control related information transmitted and received between the host control apparatus and at least one other motor control apparatus, and controls a corresponding motor of the motors based on the control related information, and a communication channel that connects the host control apparatus and the motor control apparatuses in series.

Abstract: To reduce power consumption and perform high-speed switching in boosting a voltage to a desired voltage. A semiconductor device includes a first buffer circuit, a level-shift circuit, and a second buffer circuit. The first buffer circuit includes a tri-state buffer circuit. The tri-state buffer circuit has a function of making each of an output of an input signal and an output of an inverted input signal into a resting state in response to a standby signal. The level-shift circuit includes a current mirror circuit, a differential amplifier circuit, and a switch circuit. The differential amplifier circuit has a function of controlling a current flowing through the current mirror circuit using the input signal and the inverted input signal as differential signals. The switch circuit has a function of making a current flowing through the differential amplifier circuit into a resting state in response to the standby signal.

Abstract: A ballast water treatment apparatus includes a filtering device including a filter for filtering seawater, an ultraviolet irradiation device that irradiates the seawater filtered by the filter with ultraviolet light, a first path for supplying the seawater filtered by the filtering device to the ultraviolet irradiation device, a discharge water path for discharging the seawater remaining in the filtering device, a first valve provided in the first path, a second path for supplying the seawater flowing from the ultraviolet irradiation device to a ballast tank, and a control device that closes the first valve and cleans the filter by using the seawater introduced into the filtering device before the seawater filtered by the filtering device is supplied to the ultraviolet irradiation device.

Abstract: The transmission delay time of a receiver for receiving a differential signal is reduced. A first amplifier circuit is provided in an input stage of the receiver, and a second amplifier circuit is provided in an output stage of the receiver. The first amplifier circuit is a differential input, differential output amplifier circuit. The second amplifier circuit is a differential input, single-ended output amplifier circuit. A first power supply voltage and a second power supply voltage are input as a high-level power supply voltage and a low-level power supply voltage to the first amplifier circuit and the second amplifier circuit, respectively. The withstand voltage of transistors of a differential pair of the first amplifier circuit is higher than the withstand voltage of another transistor included in the first amplifier circuit and a transistor included in the second amplifier circuit.

Abstract: A semiconductor device with an arithmetic processing function is provided. The semiconductor device includes a first circuit and a second circuit each having a function of performing one-dimensional discrete cosine transform. By directly inputting output data of the first circuit to the second circuit, two-dimensional discrete cosine transform can be performed immediately. A memory cell array included in the first circuit is divided into a plurality of memory blocks. In the case where a selection transistor is provided in the memory block, data processing can be performed in each memory block.

Abstract: A linear power supply (1) includes a P-channel (or PNP) first output transistor (10) connected between an input terminal of an input voltage (Vin) and an output terminal of an output voltage (Vout), an N-channel (or NPN) second output transistor (20) connected in parallel to the first output transistor (10), and a control circuit (30) that switches between a first mode and a second mode according to the input voltage (Vin), in which the first mode uses the first output transistor (10) while the second mode uses the second output transistor (20) as an output transistor that generates the output voltage (Vout) from the input voltage (Vin).

Abstract: A semiconductor device including a nonvolatile memory cell in which a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor are included is provided. Data is written to the memory cell by turning on the writing transistor and applying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor, so that the predetermined amount of charge is held in the node. Further, when a p-channel transistor is used as the reading transistor, a reading potential is a positive potential.

Abstract: A semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of times of writing. In the semiconductor device, a plurality of memory cells each including a first transistor, a second transistor, and a capacitor is provided in matrix and a wiring (also called a bit line) for connecting one memory cell to another memory cell and a source or drain electrode of the first transistor are electrically connected to each other through a source or drain electrode of the second transistor. Accordingly, the number of wirings can be smaller than that in the case where the source or drain electrode of the first transistor and the source or drain electrode of the second transistor are connected to different wirings. Thus, the degree of integration of the semiconductor device can be increased.

Abstract: The present invention provides a halogenated aniline represented by formula (I) (wherein each of X1 and X2 independently represents a chlorine atom, a bromine atom or an iodine atom), a method for producing the halogenated aniline, and other aspects.