Abstract: A moisture content measurement method that calculates moisture content of dehydrated sludge using a calibration curve for calculating the moisture content of the dehydrated sludge, the calibration curve being obtained by performing multivariate regression analysis after first-order differential processing or an offset correction is performed on absorbance for reflected light or reflectance for infrared rays from dehydrated sludge, the absorbance or the reflectance being obtained by measuring the dehydrated sludge using an infrared measurement apparatus provided with a light-receiving unit that can receive at least infrared rays reflected from a target object to be measured and a light source that has a plurality of infrared LEDs that can emit infrared rays having respectively different wavelengths or a light source having an infrared-region tungsten lamp or halogen lamp.

Abstract: Provided is a pressure-sensitive adhesive sheet for semiconductor wafer processing that is excellent in adhesiveness with a semiconductor wafer, and that has light peelability and suppresses adhesive residue. The pressure-sensitive adhesive sheet for semiconductor wafer processing includes in this order: a base material; an intermediate layer; and a UV-curable pressure-sensitive adhesive layer. The intermediate layer has a storage modulus of elasticity at room temperature, G?1RT, of from 300 kPa to 2,000 kPa, and a storage modulus of elasticity at 80° C., G?180, of from 10 kPa to 500 kPa. The UV-curable pressure-sensitive adhesive layer has a storage modulus of elasticity at room temperature, G?2RT, of from 100 kPa to 1,000 kPa, and a storage modulus of elasticity at 80° C., G?280, of from 10 kPa to 1,000 kPa. G?1RT/G?2RT is 1 or more.

Abstract: Provided is a pressure-sensitive adhesive composition to be used in a pressure-sensitive adhesive tape for semiconductor processing, which has an excellent unevenness-embedding property and an excellent pressure-sensitive adhesive property, and can prevent adhesive residue on an adherend at the time of its peeling. The pressure-sensitive adhesive composition to be used in a pressure-sensitive adhesive tape for semiconductor processing includes a base polymer and a photopolymerization initiator, wherein the base polymer is a polymer obtained by polymerizing a monomer composition containing a polymer having a hydroxy group and a monomer represented by the following formula: where “n” represents an integer of 1 or more.

Abstract: Provided is a backgrinding tape, which has an excellent unevenness-embedding property and an excellent pressure-sensitive adhesive property, and can prevent an adhesive residue on an adherend at the time of its peeling. The backgrinding tape includes a base material and a UV-curable pressure-sensitive adhesive layer, wherein the UV-curable pressure-sensitive adhesive layer that is free from being subjected to UV irradiation has a shear storage modulus of elasticity at 25° C. of 0.175 MPa or more and a pressure-sensitive adhesive strength to silicon of 1 N/20 mm or more, and wherein the UV-curable pressure-sensitive adhesive layer subjected to the UV irradiation of the backgrinding tape has a tensile storage modulus of elasticity at 25° C. of 300 MPa or less and a pressure-sensitive adhesive strength to silicon of 0.15 N/20 mm or less.

Abstract: Provided is a pressure-sensitive adhesive sheet for semiconductor wafer processing that is excellent in adhesiveness with a semiconductor wafer, and that has light peelability and suppresses adhesive residue. The pressure-sensitive adhesive sheet for semiconductor wafer processing includes in this order: a base material; an intermediate layer; and a UV-curable pressure-sensitive adhesive layer. The intermediate layer has a storage modulus of elasticity at room temperature, G?1RT, of from 300 kPa to 2,000 kPa, and a storage modulus of elasticity at 80° C., G?180, of from 10 kPa to 500 kPa. The UV-curable pressure-sensitive adhesive layer has a storage modulus of elasticity at room temperature, G?2RT, of from 100 kPa to 1,000 kPa, and a storage modulus of elasticity at 80° C., G?280, of from 10 kPa to 1,000 kPa. G?1RT/G?2RT is 1 or more.

Abstract: Provided is a pressure-sensitive adhesive sheet for semiconductor processing that appropriately protects a semiconductor wafer without reducing a yield. The pressure-sensitive adhesive sheet for semiconductor processing includes a pressure-sensitive adhesive layer and a base material. The pressure-sensitive adhesive sheet for semiconductor processing shows a warping amount of from 0 mm to 5 mm in an outer peripheral rib wafer heat warping evaluation, and shows a deflection amount of from 0 mm to 5 mm in an outer peripheral rib wafer deflection evaluation.

Abstract: A method for producing a light reflecting layer-including optical semiconductor element includes the steps of temporarily fixing electrode surfaces of a plurality of optical semiconductor elements each having the electrode surface provided with an electrode, a light emitting surface opposing the electrode surface and provided with a light emitting layer, and a connecting surface connecting a peripheral end edge of the electrode surface to that of the light emitting surface to a temporarily fixing sheet at spaced intervals to each other; filling a first gap between the optical semiconductor elements that are next to each other with a light reflecting sheet and forming a light reflecting layer on the connecting surfaces of the plurality of optical semiconductor elements; removing the light reflecting layer attaching to the light emitting surfaces of the plurality of optical semiconductor elements; and cutting the light reflecting layer between the optical semiconductor elements that are next to each other.

Abstract: A method for producing a light reflecting layer-including optical semiconductor element includes the steps of temporarily fixing electrode surfaces of a plurality of optical semiconductor elements each having the electrode surface provided with an electrode, a light emitting surface opposing the electrode surface and provided with a light emitting layer, and a connecting surface connecting a peripheral end edge of the electrode surface to that of the light emitting surface to a temporarily fixing sheet at spaced intervals to each other; filling a first gap between the optical semiconductor elements that are next to each other with a light reflecting sheet and forming a light reflecting layer on the connecting surfaces of the plurality of optical semiconductor elements; removing the light reflecting layer attaching to the light emitting surfaces of the plurality of optical semiconductor elements; and cutting the light reflecting layer between the optical semiconductor elements that are next to each other.

Abstract: A method for producing a light reflecting layer-including optical semiconductor element includes the steps of temporarily fixing electrode surfaces of a plurality of optical semiconductor elements each having the electrode surface provided with an electrode, a light emitting surface opposing the electrode surface and provided with a light emitting layer, and a connecting surface connecting a peripheral end edge of the electrode surface to that of the light emitting surface to a temporarily fixing sheet at spaced intervals to each other; filling a first gap between the optical semiconductor elements that are next to each other with a light reflecting sheet and forming a light reflecting layer on the connecting surfaces of the plurality of optical semiconductor elements; removing the light reflecting layer attaching to the light emitting surfaces of the plurality of optical semiconductor elements; and cutting the light reflecting layer between the optical semiconductor elements that are next to each other.

Abstract: A method for producing a light reflecting layer-including optical semiconductor element includes the steps of temporarily fixing electrode surfaces of a plurality of optical semiconductor elements each having the electrode surface provided with an electrode, a light emitting surface opposing the electrode surface and provided with a light emitting layer, and a connecting surface connecting a peripheral end edge of the electrode surface to that of the light emitting surface to a temporarily fixing sheet at spaced intervals to each other; filling a first gap between the optical semiconductor elements that are next to each other with a light reflecting sheet and forming a light reflecting layer on the connecting surfaces of the plurality of optical semiconductor elements; removing the light reflecting layer attaching to the light emitting surfaces of the plurality of optical semiconductor elements; and cutting the light reflecting layer between the optical semiconductor elements that are next to each other.

Abstract: An encapsulating sheet is formed from an encapsulating resin composition which contains an encapsulating resin and silicone microparticles, and the mixing ratio of the silicone microparticles with respect to the encapsulating resin composition is 20 to 50 mass %.

Abstract: An encapsulating sheet is formed from an encapsulating resin composition which contains an encapsulating resin and silicone microparticles, and the mixing ratio of the silicone microparticles with respect to the encapsulating resin composition is 20 to 50 mass %.

Abstract: A light-emitting device includes a substrate including a mirror surface region on its upper surface, a semiconductor light-emitting element disposed in the mirror surface region, and an encapsulating layer joined onto the upper surface of the substrate. The encapsulating layer includes a lower layer that is in contact with the upper surface of the substrate, covers the surrounding of the semiconductor light-emitting element, and contains phosphor; and an upper layer that is positioned on the lower layer, and has a larger phosphor content per unit area than that of the lower layer.

Abstract: A method for producing an encapsulating layer-covered semiconductor element includes a disposing step of disposing a semiconductor element on a support, an encapsulating step of embedding and encapsulating the semiconductor element by an encapsulating layer in an encapsulating sheet including a peeling layer and the encapsulating layer laminated below the peeling layer and made from a thermosetting resin before complete curing, and a heating step of heating and curing the encapsulating layer after the encapsulating step. The heating step includes a first heating step in which the encapsulating sheet is heated under a normal pressure at a first temperature, a peeling step in which the peeling layer is peeled from the encapsulating layer after the first heating step, and a second heating step in which the encapsulating layer is heated at a second temperature that is higher than the first temperature after the peeling step.

Abstract: An encapsulating sheet includes an encapsulating layer for encapsulating a light emitting diode element, a light scattering layer formed at one side in a thickness direction of the encapsulating layer and for scattering light emitted from the light emitting diode element, and a spacer layer interposed between the encapsulating layer and the light scattering layer.

Abstract: An encapsulating sheet, encapsulating an optical semiconductor element, includes a first layer which contains a phosphor and a second layer which contains a phosphor, is laminated on the first layer, and encapsulates the optical semiconductor element. The ratio of the volume of the phosphor in the first layer to that of the phosphor in the second layer is 90:10 to 55:45.

Abstract: An encapsulating sheet includes an encapsulating resin layer and a barrier film layer formed at one side in a thickness direction of the encapsulating resin layer.

Abstract: A light-emitting device includes a substrate including a mirror surface region on its upper surface, a semiconductor light-emitting element disposed in the mirror surface region, and an encapsulating layer joined onto the upper surface of the substrate. The encapsulating layer includes a lower layer that is in contact with the upper surface of the substrate, covers the surrounding of the semiconductor light-emitting element, and contains phosphor; and an upper layer that is positioned on the lower layer, and has a larger phosphor content per unit area than that of the lower layer.

Abstract: An encapsulating sheet includes an encapsulating resin layer and a wavelength conversion layer laminated on the encapsulating resin layer. The wavelength conversion layer is formed by laminating a barrier layer formed of a light transmissive resin composition and having a thickness of 200 ?m to 1000 ?m, and a phosphor layer containing a phosphor.

Abstract: An encapsulating sheet, encapsulating an optical semiconductor element, includes a first layer which contains a phosphor and a second layer which contains a phosphor, is laminated on the first layer, and encapsulates the optical semiconductor element. The ratio of the volume of the phosphor in the first layer to that of the phosphor in the second layer is 90:10 to 55:45.