Abstract: In a content delivery system including a server and content processing apparatus connected to each other across a network, a content delivered by the system is encrypted with a content key Kc, and supplied along with a sublicense encrypted with a work key Kw to a DTV. The sublicense includes a second use condition under which a content is used and a content key Kc for decrypting an encrypted content. The work key Kw for decrypting an encrypted content is included in a main license. The main license is supplied to the DTV separately from the content. The main license includes, in addition to the work key Kw, a first use condition under which a content under a subscription contract is used.

Abstract: Provided are a method and apparatus for inspecting a defect on a plane, such as a surface or a section, of an object to be inspected. The object is, for instance, a silicon wafer. A whole area of a plane of the object is first imaged by an optical system to gain image signals. Then, a particular region on the plane is positionally detected from the image signals. The particular region includes a blot and a defect and has a higher luminance than a remaining region on the plane. A blot is distinguishably detected from the particular region. A specified region on the plane is then subjected to a detailed inspection under a microscope. The region is set to avoid the blot even if the blot is on the region. The detailed inspection under the microscope is performed toward only the region with no blot.

Abstract: An IC card (processing terminal) divides a process into process blocks, and holds a time period required for processing each process block. A receiver (receiving terminal) notifies the IC card of a time period which can be spent for processing non-real-time process data when causing the IC card to perform the processing. The IC card processes the process blocks which can be processed within the notified time period. After the processing, the IC card once sends a response back to the receiver, and then transitions into a state in which it can receive a new request. Accordingly, it becomes possible for the IC card to process real-time process data such as an ECM. In the case where the receiver continues the suspended processing, it notifies the IC card of the continuation of the processing so that it causes the IC card to continue the processing of non-real-time process data.

Abstract: The present invention provides a rights management terminal that can securely send and receive usage information while preventing spoofing and protecting user's privacy.

Abstract: A method for joining fluid containers and fluid ejectors in a fluid ejecting device are provided. The fluid container includes one or more heat stakes and a substrate includes one or more apertures for receiving the heat stakes and one or more three-dimensional features in the vicinity of the one or more apertures. The fluid ejector and optionally an elastic member are interposed between the fluid container and the substrate. Thermal energy is applied to the one or more heat stakes so that the one or more heat stakes soften to occupy the apertures and three-dimensional features of the substrate and pressure is applied to maintain contact between the fluid container, elastic member, fluid ejector and substrate. The present invention is also directed to substrate including one or more apertures for receiving heat stakes and one or more three-dimensional features in the vicinity of the one or more apertures.

Abstract: There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×1013 atoms/cm3 or more, or with nitrogen doping at a concentration of 1×1012 atoms/cm3 and carbon doping at a concentration of 0.1×1016-5×1016 atoms/cm3 and/or boron doping at a concentration of 1×1017 atoms/cm3 or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer. The present invention provides an epitaxial wafer for a large-scale integrated device having no defects in a device-active region and having an excellent gettering effect without performance of an extrinsic or intrinsic gettering treatment, which is a factor for increasing the number of production steps and production costs.

Abstract: The present invention provides a technique which makes it possible to eliminate unauthorized playback of contents where unauthorized apparatuses are used and enable only authorized playback apparatuses to play back contents properly. The playback apparatus of the present invention obtains encrypted key information that has been encrypted by a first secret-key encrypting method, and decrypt the encrypted key information into key information using a secret key stored in a storing unit. When the key information is key-updating information, the playback apparatus updates the secret key according to the key-updating information.

Abstract: A content distribution system 200 distributes a content key and content use conditions for controlling a content use in a client apparatus 110 to the client apparatus 110, via a communication channel 130, from either a multicast distribution server 122 or a unicast distribution server 123. A content distribution management server 121 determines by which distribution methods to send a content key and content use conditions of each content according to an attribute of the content (a compression format, a compression ratio, a content holder, and the like). An encrypted content distribution server 124 distributes only encrypted content whose content key and content use conditions to be distributed by the unicast, and the multicast distribution server 122 distributes encrypted content whose content key and content use conditions are superimposed by the multicast.

Abstract: There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×1013 atoms/cm3 or more, or with nitrogen doping at a concentration of 1×1012 atoms/cm3 and carbon doping at a concentration of 0.1×1016-5×1016 atoms/cm3 and/or boron doping at a concentration of 1×1017 atoms/cm3 or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer.

Abstract: A content history log collecting system comprising a server apparatus for distributing a content to a terminal apparatus and collecting a content history log from the terminal apparatus and a terminal apparatus for using the content, wherein the server apparatus includes an adding unit operable to add, to the content, time information indicating a temporal scale of the content, and a content sending unit operable to send, to the terminal apparatus, the content to which the time information is added, and the terminal apparatus includes a content using unit operable to use the content sent from the server apparatus, a generating unit operable to generate section information indicating a section in the content that has been actually used by the content using unit based on the time information of the content, and a sending unit operable to send the section information to the server apparatus.

Abstract: The system of the present invention is a system comprising a server device which provides a license and a terminal device which controls content use based on the license provided from the server device, wherein the server device includes the first collecting unit operable to collect the first history logs concerning the content use sent from the terminal device, the second collecting unit operable to collect the second history logs concerning the content use sent from the terminal device separately from the collection by the first collection unit and the verifying unit operable to verify the first history logs collected by the first collection unit and the second history logs collected by the second collection unit, and the terminal device includes the first acquirement unit operable to acquire the first history logs concerning the content use and the second acquirement unit operable to acquire the second history logs concerning the content use and a history log sending unit operable to separately send the fi

Abstract: A silicon single crystal wafer for a particle monitor is presented, which wafer has an extremely small amount in the surface density of light point defects and is capable of still maintaining a small surface density even after repeating the SC-1. The wafer is prepared by slicing a silicon single crystal ingot including an area in which crystal originated particles are generated, and the surface density of particles having a size of not less than 0.12 &mgr;m is not more than 15 counts/cm2 after repeating the SC-1. More preferably, a silicon single crystal wafer having a nitrogen concentration of 1×1013-1×1015 atoms/cm3 provides a surface density of not more than 1 counts/cm2 for the particles having a diameter of not less than 0.12 &mgr;m even after repeating the SC-1. Hence, a high quality wafer optimally used for a particle monitor can be obtained and a very small number of defects in the wafer make it possible to produce devices.

Abstract: Provided are a method and apparatus for inspecting a defect on a plane, such as a surface or a section, of an object to be inspected. The object is, for instance, a silicon wafer. A whole area of a plane of the object is first imaged by an optical system to gain image signals. Then, a particular region on the plane is positionally detected from the image signals. The particular region includes a blot and a defect and has a higher luminance than a remaining region on the plane. A blot is distinguishably detected from the particular region. A specified region on the plane is then subjected to a detailed inspection under a microscope. The region is set to avoid the blot even if the blot is on the region. The detailed inspection under the microscope is performed toward only the region with no blot.

Abstract: An ink jet recording head having improved printing performance and improved manufacturing efficiency, a manufacturing method of the ink jet recording head, and an ink jet recording device. A head chip in which nozzles for jetting ink droplets are formed is fitted in an opening of an ink manifold via rubber sealing members, and the chip is exposed to the interior of ink supply chambers. Thus, the chip is efficiently cooled by the ink, and the temperature of the ink can be controlled so as to be within a predetermined range. Accordingly, no heat sink is necessary, and as a result, the head is easily manufactured and made compact. Since the chip is fitted in the manifold opening via the sealing members, application of an adhesive and curing time are unnecessary. Thus, manufacturing efficiency is improved.

Abstract: There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×1013 atoms/cm3 or more, or with nitrogen doping at a concentration of 1×1012 atoms/cm3 and carbon doping at a concentration of 0.1×1016-5×1016 atoms/cm3 and/or boron doping at a concentration of 1×1017 atoms/cm3 or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer.

Abstract: A management device 10 of a license management system 1 acquires a usage request of a content from an SD card 40 or a printer 50 via a relay device 30, analyzes the acquired usage request, acquires usage environment information of the SD card 40 or the printer 50 from the relay device 30, analyzes the acquired usage environment information, generates license information including a usage rule corresponding to the analysis results of the usage request and the usage environment information, generates instruction information indicating how to handle the license information in the relay device based on the analysis result of the usage environment information, embeds the generated instruction information in the license information, and sends the license information to the relay device 30.

Abstract: An oil separator including a shell (50) with a cylindrical section and a taper section which narrows in a downward direction and which is formed as an integral part at the bottom of the cylindrical section, an outlet pipe (51) which is inserted through the top of the shell so that the central axis of the outlet pipe coincides with the central axis of the shell, a discharge pipe (52) connected to an opening provided at the bottom of the taper section, and an inlet pipe (53) connected tangentially to the inner surface of the cylindrical section for introducing a gas liquid two phase flow into the shell, wherein the distance between the shell opening (50a) and the tip (51a) of the outlet pipe inside the shell is at least 5 times the inside diameter of the inlet pipe (53).

Abstract: A transmitting system which comprises a transmission line, a transmitting apparatus connected to the transmission line, and a receiving apparatus connected to the transmission line, and transmits data between the transmitting apparatus and the receiving apparatus, wherein the transmitting apparatus comprises packet compressing means which receives input data comprising plural packets having identifiers as an input, identifies packets to be discarded and effective packets according to the identifiers, and outputs compression information indicating the number of continuously discarded packets and the effective packets to the transmission line, and the receiving apparatus comprises packet restoring means which receives the compression information and the effective packets which have been output from the transmitting apparatus, generates ineffective, packets which are as many as the discarded packets, and outputs the ineffective packets and the effective packets.

Abstract: A silicon wafer characterized in that the laser scattering tomography defect occurrence region accounts for at least 80% of the wafer surface area and that the laser scattering tomography defects have a mean size of not more than 0.1 &mgr;m, with the density of those defects which exceed 0.1 &mgr;m in size being not more than 1×105 cm−3, and wafers derived from this wafer as the raw material by heat treatment for oxide precipitate formation, by heat treatment for denuded layer formation or by epitaxial layer formation on the surface are useful as semiconductor materials.

Abstract: There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×1013 atoms/cm3 or more, or with nitrogen doping at a concentration of 1×1012 atoms/cm3 and carbon doping at a concentration of 0.1×1016-5×1016 atoms/cm3 and/or boron doping at a concentration of 1×1017 atoms/cm3 or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer.