Abstract: A method of forming a silicon oxide film includes forming a silicon film on a base, the base being a surface to be processed of an object to be processed, and forming a silicon oxide film on the base by oxidizing the silicon film. Between the forming a silicon film and the forming a silicon oxide film, exposing the object to be processed having the silicon film formed thereon to an atmosphere containing at least an oxidizing component is performed.

Abstract: A method of forming a silicon nitride film on the surface of an object to be processed, the method including forming a seed layer functioning as a seed of the silicon nitride film on the surface of the object to be processed by using at least an aminosilane-based gas, prior to forming the silicon nitride film on the surface of the object to be processed.

Abstract: In vehicle air-conditioning devices including a refrigerant circuit having a compressor, an outdoor heat exchanger, an expansion device, and an indoor heat exchanger that are connected by refrigerant pipes to form a refrigeration cycle; an indoor air-sending device that supplies air to the indoor heat exchanger; and an outdoor air-sending device that supplies air to the outdoor heat exchanger, the refrigerant circuit is installed under the floor of a vehicle and uses carbon dioxide as the refrigerant.

Abstract: A boosting circuit, includes an output circuit including a first transmission circuit, transmitting charges of a first boosting node to a first output node according to a first transmission control signal, a detection circuit, detecting the voltage level of the first output node, and a pre-charge circuit pre-charging the first boosting node according a detection signal of the detection circuit; a first pump circuit includes a second transmission circuit, transmitting charges to a second output node according to a second transmission control signal, and a first capacitance unit, coupled to the first boosting node, boosting the voltage level of the first boosting node according to charges transmitted in the second output node; and a control circuit, coupled to the output circuit and the first pump circuit, controls the second transmission control signal according to the voltage level of the first output node.

Abstract: A film formation method of forming a silicon oxide film on a surface of an object to be processed in a process chamber includes absorbing a seed gas comprising a silane-based gas on the surface of the object to be processed by supplying the seed gas into the process chamber, forming a silicon film having an impurity by supplying a silicon-containing gas as a material gas, and an addition gas including the impurity into the process chamber, and oxidizing the silicon film to convert the silicon film into the silicon oxide film. Accordingly, the silicon oxide film having the high density and the high stress is formed on the surface of the object to be processed.

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Abstract: To improve the separation efficiency of a gas-liquid separator in the gas-liquid separator and an air conditioner, the gas-liquid separator having a vessel with an inlet pipe and an outlet pipe is arranged such that an exit end section of the inlet pipe is formed to be closed or to have a gap, an expanded end section having a width greater than the diameter of that portion of the inlet pipe which crosses a container of the gas-liquid separator is provided, and that a lateral hole is formed in a side face of the expanded end section. Refrigerant vapor and refrigerant liquid are efficiently separated from each other at the expanded end section, and this improves separation efficiency of the gas-liquid separator.

Abstract: A method for using a film formation apparatus includes performing a main cleaning process and a post cleaning process in this order inside a reaction chamber. The main cleaning process is arranged to supply a cleaning gas containing fluorine into the reaction chamber while exhausting gas from inside the reaction chamber, thereby etching a film formation by-product containing silicon. The post cleaning process is arranged to remove a silicon-containing fluoride generated by the main cleaning process and remaining inside the reaction chamber and to alternately repeat, a plurality of times, supplying an oxidizing gas into the reaction chamber to transform the silicon-containing fluoride into an intermediate product by oxidization, and supplying hydrogen fluoride gas into the reaction chamber while exhausting gas from inside the reaction chamber to remove the intermediate product by a reaction between the hydrogen fluoride gas and the intermediate product.

Abstract: There are provided a photoelectric sensor and a photoelectric sensor system in which received light quantities of a plurality of photoelectric sensors are displayed in an integrated manner, and slight variation in the received light quantity that has nothing to do with a detected condition of a workpiece is ignored and a photoelectric sensor with abnormity is easily found out. Upon acceptance of an instruction to execute scaled display by a control unit of a photoelectric sensor, a scaling adjustment ratio is calculated by assigning the received light quantity to a target value set to be greater than a display upper limit while executing the scaled display. A received light quantity that is subsequently obtained is scaled based on the calculated scaling adjustment ratio to obtain a received light quantity after the scaling.

Abstract: A boosting circuit, includes an output circuit including a first transmission circuit, transmitting charges of a first boosting node to a first output node according to a first transmission control signal, a detection circuit, detecting the voltage level of the first output node, and a pre-charge circuit pre-charging the first boosting node according a detection signal of the detection circuit; a first pump circuit includes a second transmission circuit, transmitting charges to a second output node according to a second transmission control signal, and a first capacitance unit, coupled to the first boosting node, boosting the voltage level of the first boosting node according to charges transmitted in the second output node; and a control circuit, coupled to the output circuit and the first pump circuit, controls the second transmission control signal according to the voltage level of the first output node.

Abstract: A semiconductor device including a logic circuit capable of decreasing a leakage current occurred during a standby state is provided. The semiconductor device includes a power supply portion for supplying a first operation voltage or a second operation voltage smaller than the first operation voltage; a P-type low-threshold transistor Tp for receiving the first or the second operation voltage from the power supply portion; and a N-type transistor Tn connected between the transistor Tp and a base potential. The transistors Tp, Tn construct a logic circuit. The power supply portion supplies the first operation voltage to the source of the transistor Tp in the enable state, and supplies the second operation voltage in a standby state. The second operation voltage is set so that voltage amplitude between gate and source of each transistor Tp, Tn is larger than the threshold value of the transistors Tp, Tn.

Abstract: A terminal apparatus is provided which guarantees operation of a use condition bytecode while securing a degree of freedom for a service provider generating the use condition bytecode. A terminal apparatus (300), in which a license (1200) includes a use condition determining logic code (1204) and a version number (1202), includes a license obtainment unit (304) obtaining the license (1200), a use condition verification unit (302) determining, based on the version number (1202), whether or not an operation of the use condition determining logic code (1204) has been confirmed, a use condition bytecode execution unit (303) executing the use condition determining logic code (1204) when the operation of the use condition determining logic code (1204) has been determined to have been confirmed, and a content playback unit (306) playing back content based on the use condition determining logic code (1204).

Abstract: A method of forming a silicon nitride film on the surface of an object to be processed, the method including forming a seed layer functioning as a seed of the silicon nitride film on the surface of the object to be processed by using at least an aminosilane-based gas, prior to forming the silicon nitride film on the surface of the object to be processed.

Abstract: A heat exchanger including plate fins stacked at respective intervals relative to one another, and heat exchanger tubes penetrating the fins in. The heat exchanger exchanges heat between first and second fluids flowing, respectively, inside and outside the heat exchanger tubes. Each of the fins includes a substantially planar main body and cut-raised portions extending from the main body and disposed at an upstream side of flow of the second fluid. Each of the cut-raised portions corresponds to a respective heat exchanger tube and includes first and second opposed side ends connected to the main body of the fin. The first side end is nearer to the corresponding heat exchanger tube than is the second side end, the first side end is longer than the second side end, and the first side end is disposed at a downstream side of the flow of the second fluid, facing the corresponding heat exchanger tube.

Abstract: A semiconductor integrated circuit design apparatus includes: an association information creating unit which creates association information for associating wiring information of a signal line with wiring information of a shield line placed for the signal line; an association information storage unit which stores the thus created association information; and a shield wiring unit which, when the placement of the signal line is changed, changes in interlinking fashion with the changed placement the placement of the shield line that is associated with the signal line by the association information.

Abstract: A film formation method of forming a silicon oxide film on a surface of an object to be processed in a process chamber includes absorbing a seed gas comprising a silane-based gas on the surface of the object to be processed by supplying the seed gas into the process chamber, forming a silicon film having an impurity by supplying a silicon-containing gas as a material gas, and an addition gas including the impurity into the process chamber, and oxidizing the silicon film to convert the silicon film into the silicon oxide film. Accordingly, the silicon oxide film having the high density and the high stress is formed on the surface of the object to be processed.

Abstract: Within a page buffer 14 which is coupled to a non-volatile memory cell array 10 and temporally stores data as the data with a predetermined page unit is written in and read out to/from the memory cell array 10, at least one latch circuit 14v-1 including a bit line selector 14s, a page buffer unit circuit 14u including two latch L1, L2, and a latch L3 is set up for a plurality of bit lines. The bit line selector 14s selects one bit line and couples it to the page buffer unit circuit 14u. The latch L1 temporally stores the data which are read out from the memory cell of the selected bit line, and then outputs the data through the latch L2 or L3. On the other hand, the latch L1 temporally stores the programming data inputted through the latch L2 or L3, and after that outputs it to the memory cell of the selected bit line for programming.

Abstract: The amorphous silicon film formation method includes forming a seed layer on the surface of a base by heating the base and flowing aminosilane-based gas onto the heated base; and forming an amorphous silicon film on the seed layer by heating the base, supplying silane-based gas containing no amino group onto the seed layer on the surface of the heated base, and thermally decomposing the silane-based gas containing no amino group.

Abstract: A content distribution system distributes a content key and content use conditions for controlling a content use in a client apparatus to the client apparatus, via a communication channel, from either a multicast distribution server or a unicast distribution server. A content distribution management server determines by which distribution method to send the content key and content use conditions of each content according to an attribute of the content (a compression format, a compression ratio, a content holder, and the like). An encrypted content distribution server distributes only encrypted content whose content key and content use conditions are to be distributed by the unicast, and the multicast distribution server distributes encrypted content whose content key and content use conditions are superimposed by the multicast.

Abstract: The present invention provides a droplet ejection head having a liquid ejection energy driving device to eject a liquid from a nozzle, the droplet ejection head including: a nozzle plate provided with a nozzle to eject liquid droplets; a tetrahedral amorphous carbon film provided on the nozzle plate; and a water-repellent film provided on the tetrahedral amorphous carbon film.