Patents by Inventor Hiroki Yoshikawa

Hiroki Yoshikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photomask blank and photomask
    Patent number: 8007964
    Abstract: A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.
    Type: Grant
    Filed: February 19, 2010
    Date of Patent: August 30, 2011
    Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.
    Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Masahide Iwakata, Mikio Takagi, Yuichi Fukushima, Tadashi Saga
  • PROJECTING OPTICAL UNIT AND PROJECTING TYPE IMAGE DISPLAY APPARATUS THEREWITH
    Publication number: 20110205499
    Abstract: A projection image display device is disclosed in which a trapezoidal distortion and/or aberration are restrained when an image is enlarged and projected obliquely onto a screen. An image generator is connected to an optical system base in such a manner that at least an inclination thereof (on an axis parallel to X axis) with respect to a vertical line and a distance thereof in forward and backward direction (Z axis direction) can be adjusted by an adjusting mechanism. Further, a projecting lens 2 as a first optical system and a free-form curved surface mirror as a second optical system are fixed to the optical system base. The free-form curved surface mirror is rotatable (on an rotary axis parallel to X axis) with respect to the vertical line at a substantial center of the free-form curved surface mirror.
    Type: Application
    Filed: May 3, 2011
    Publication date: August 25, 2011
    Applicant: Hitachi, Ltd.
    Inventors: Hiroki YOSHIKAWA, Takanori HISADA, Tetsu OHISHI, Koji HIRATA, Naoyuki OGURA
  • Photomask blank and photomask
    Patent number: 8003284
    Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
    Type: Grant
    Filed: June 22, 2010
    Date of Patent: August 23, 2011
    Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.
    Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
  • Photomask blank and photomask making method
    Patent number: 7989124
    Abstract: A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
    Type: Grant
    Filed: June 22, 2010
    Date of Patent: August 2, 2011
    Assignees: Toppan Printing Co., Ltd., Shin-Etsu Chemical Co., Ltd.
    Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
  • Projecting optical unit and projecting type image display apparatus therewith
    Patent number: 7961400
    Abstract: A projection image display device is disclosed in which a trapezoidal distortion and/or aberration are restrained when an image is enlarged and projected obliquely onto a screen. An image generator is connected to an optical system base in such a manner that at least an inclination thereof (on an axis parallel to X axis) with respect to a vertical line and a distance thereof in forward and backward direction (Z axis direction) can be adjusted by an adjusting mechanism. Further, a projecting lens 2 as a first optical system and a free-form curved surface mirror as a second optical system are fixed to the optical system base. The free-form curved surface mirror is rotatable (on an rotary axis parallel to X axis) with respect to the vertical line at a substantial center of the free-form curved surface mirror.
    Type: Grant
    Filed: August 5, 2009
    Date of Patent: June 14, 2011
    Assignee: Hitachi, Ltd.
    Inventors: Hiroki Yoshikawa, Takanori Hisada, Tetsu Ohishi, Koji Hirata, Naoyuki Ogura
  • Image reproduction method, image reproduction device and digital camera
    Patent number: 7904836
    Abstract: An image reproduction method includes: a reduced-size image reading step of reading a plurality of reduced-size images from a recording medium and storing the reduced-size images in a memory; a display step of multi-displaying the plurality of reduced-size images on a monitor; a cursor movement detection step of detecting a moving speed of a cursor indicating a selected reduced-size image from the plurality of reduced-size images displayed on the monitor; and an image read-ahead step of reading images from the recording medium according to the moving speed of the cursor and storing the image in the memory.
    Type: Grant
    Filed: April 20, 2007
    Date of Patent: March 8, 2011
    Assignee: Panasonic Corporation
    Inventors: Hiroki Yoshikawa, Masahiro Ogawa
  • PHOTOMASK MAKING METHOD
    Publication number: 20100316942
    Abstract: A photomask is manufactured from a photomask blank comprising a transparent substrate and a light-shielding film consisting of upper and lower layers of transition metal-containing silicon base materials, the content of O+N in the upper layer being higher than that of the lower layer. The light-shielding film is processed in two steps by fluorine dry etching through a resist pattern such that a lower portion of the film is left behind, and oxygen-containing chlorine dry etching for removing the remainder of the film.
    Type: Application
    Filed: June 10, 2010
    Publication date: December 16, 2010
    Inventors: Shinichi IGARASHI, Yukio INAZUKI, Hideo KANEKO, Hiroki YOSHIKAWA, Yoshinori KINASE
  • ETCHING METHOD AND PHOTOMASK BLANK PROCESSING METHOD
    Publication number: 20100291478
    Abstract: Disclosed herein is a dry etching method for a work layer formed over a substrate, including the steps of forming a hard mask layer over the work layer formed over the substrate, forming a resist pattern over the hard mask layer, transferring the resist pattern to the hard mask layer by first dry etching conducted using the resist pattern, and patterning the work layer by second dry etching conducted using a hard mask pattern obtained upon the transfer to the hard mask layer, wherein after the hard mask layer is patterned by the first dry etching, the patterning of the work layer by the second dry etching is conducted through changing the concentration of an auxiliary ingredient of a dry etching gas, without changing a main ingredient of the dry etching gas, in an etching apparatus in which the first dry etching has been conducted.
    Type: Application
    Filed: May 14, 2010
    Publication date: November 18, 2010
    Inventors: Shinichi IGARASHI, Yukio Inazuki, Hideo Kaneko, Hiroki Yoshikawa, Yoshinori Kinase
  • PHOTOMASK BLANK AND PHOTOMASK MAKING METHOD
    Publication number: 20100261099
    Abstract: A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
    Type: Application
    Filed: June 22, 2010
    Publication date: October 14, 2010
    Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
  • PHOTOMASK BLANK AND PHOTOMASK
    Publication number: 20100261101
    Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
    Type: Application
    Filed: June 22, 2010
    Publication date: October 14, 2010
    Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
  • PHOTOMASK BLANK AND PHOTOMASK
    Publication number: 20100261100
    Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
    Type: Application
    Filed: June 22, 2010
    Publication date: October 14, 2010
    Inventors: Hiroki YOSHIKAWA, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
  • SCREEN UNIT STOWABLE TYPE EQUIPMENT AND IN-VEHICLE MOUNT INFORMATION EQUIPMENT
    Publication number: 20100254077
    Abstract: There are provided screen unit stowable type equipment and in-vehicle mount information equipment that have a communication antenna mounted at an image display unit side, and can keep reception sensitivity even under a state that the image display unit is stowed in an equipment main body portion. In screen unit stowable type equipment having an equipment main body portion 10 having an operation panel 30 secured to the front surface thereof and an image display unit 20 that is stowed in the equipment main body portion 10 so as to be pulled out from the front surface of the equipment main body portion 10 with a liquid crystal display screen 21 being placed face down, a radio communication unit which can communicate with an external is provided, and a pattern antenna 110 for radio communication is provided to the tip portion 20a in a pull-out direction of the image display unit 20.
    Type: Application
    Filed: November 11, 2008
    Publication date: October 7, 2010
    Inventor: Hiroki Yoshikawa
  • METHOD FOR INSPECTING PHOTOMASK BLANK OR INTERMEDIATE THEREOF, METHOD FOR DETERMINING DOSAGE OF HIGH-ENERGY RADIATION, AND METHOD FOR MANUFACTURING PHOTOMASK BLANK
    Publication number: 20100248091
    Abstract: A photomask blank which is manufactured by depositing a phase shift film on a substrate and irradiating the phase shift film with high-energy radiation to effect substrate shape adjusting treatment is inspected by measuring a surface topography of the photomask blank after the substrate shape adjusting treatment, removing the phase shift film from the photomask blank, measuring a surface topography of the treated substrate after removal of the phase shift film, and comparing the surface topographies, thereby evaluating a warpage change before and after removal of the phase shift film, due to a stress of the phase shift film having undergone substrate shape adjusting treatment.
    Type: Application
    Filed: March 30, 2010
    Publication date: September 30, 2010
    Inventors: Yukio INAZUKI, Hideo Kaneko, Hiroki Yoshikawa
  • PHOTOMASK BLANK AND PHOTOMASK
    Publication number: 20100248090
    Abstract: A photomask blank comprises a transparent substrate, a light-shielding film of an optionally transition metal-containing silicon material, and an etching mask film of a chromium compound base material. The etching mask film consists of multiple layers of different composition which are deposited by reactive sputtering, the multiple layers including, in combination, a first layer of a material which imparts a compression stress when deposited on the substrate as a single composition layer and a second layer of a material which imparts a tensile stress when deposited on the substrate as a single composition layer.
    Type: Application
    Filed: March 30, 2010
    Publication date: September 30, 2010
    Inventors: Yukio INAZUKI, Hideo Kaneko, Hiroki Yoshikawa
  • METHOD FOR INSPECTING AND JUDGING PHOTOMASK BLANK OR INTERMEDIATE THEREOF
    Publication number: 20100246932
    Abstract: A photomask blank having a film on a substrate is inspected by (A) measuring a surface topography of a photomask blank having a film to be inspected for stress, (B) removing the film from the photomask blank to provide a treated substrate, (C) measuring a surface topography of the treated substrate, and (D) comparing the surface topography of the photomask blank with the surface topography of the treated substrate, thereby evaluating a stress in the film.
    Type: Application
    Filed: March 30, 2010
    Publication date: September 30, 2010
    Inventors: Yukio INAZUKI, Hideo Kaneko, Hiroki Yoshikawa
  • Photomask blank
    Patent number: 7790339
    Abstract: A photomask blank has a light-shielding film composed of a single layer of a material containing a transition metal, silicon and nitrogen or a plurality of layers that include at least one layer made of a material containing a transition metal, silicon and nitrogen, and has one or more chrome-based material film. The high transition metal content ensures electrical conductivity, preventing charge-up in the photomask production process, and also provides sufficient chemical stability to cleaning in photomask production. The light-shielding film has a good resistance to dry etching of the chrome-based material film in the presence of chlorine and oxygen, thus ensuring a high processing accuracy.
    Type: Grant
    Filed: April 19, 2007
    Date of Patent: September 7, 2010
    Assignees: Shin-etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.
    Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yuichi Fukushima
  • Photomask blank, photomask and fabrication method thereof
    Patent number: 7771893
    Abstract: A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm?1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.
    Type: Grant
    Filed: July 20, 2006
    Date of Patent: August 10, 2010
    Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.
    Inventors: Hiroki Yoshikawa, Hiroshi Kubota, Yoshinori Kinase, Satoshi Okazaki, Tamotsu Maruyama, Takashi Haraguchi, Masahide Iwakata, Yuichi Fukushima, Tadashi Saga
  • Method of fabricating photomask blank
    Patent number: 7767368
    Abstract: An opaque area is formed in a sidewall portion of a susceptor by stacking a material that is transparent to flash light and a material that is opaque to the flash light to form the sidewall portion or coating a surface of the opaque material with the transparent material. A top surface of the opaque area in the sidewall portion of the susceptor is designed to have a predetermined positional relationship with a top surface of a substrate; the top surface of the opaque area is set at the same position as that of the top surface of the substrate or higher than the top surface of the substrate by a predetermined height. Thus, obliquely incident flash light is absorbed or irregularly reflected by the opaque quartz portion, surrounding an excavated portion of the susceptor.
    Type: Grant
    Filed: August 3, 2007
    Date of Patent: August 3, 2010
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Noriyasu Fukushima, Hiroki Yoshikawa
  • Photomask blank and photomask
    Patent number: 7767366
    Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
    Type: Grant
    Filed: March 8, 2007
    Date of Patent: August 3, 2010
    Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.
    Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
  • Photomask blank and photomask making method
    Patent number: 7767367
    Abstract: A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
    Type: Grant
    Filed: March 8, 2007
    Date of Patent: August 3, 2010
    Assignees: Toppan Printing Co., Ltd., Shin-Etsu Chemical Co., Ltd.
    Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima