Abstract: A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Abstract: A photomask blank comprising a multilayer film including at least four layers of different compositions, wherein the interface between the layers is moderately graded in composition; a phase shift mask blank comprising a phase shift film of at least two layers including a surface layer of a composition based on a zirconium silicide compound and a substrate adjacent layer of a composition based on a molybdenum silicide compound, and a further layer between one layer and another layer of a different composition, the further layer having a composition moderately graded from that of the one layer to that of the other layer; a phase shift mask blank comprising a phase shift film including a plurality of layers containing a metal and silicon in different compositional ratios which are stacked in such order that a layer having a higher etching rate is on the substrate side and a layer having a lower etching rate is on the surface side.

Abstract: A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.

Abstract: An image display apparatus includes an image generation source, optics for projecting in an enlarged form the image generated by the image generation source, and a transmissive screen for displaying the image projected from said optics. The transmissive screen includes a Fresnel lens sheet disposed at an image generation source side, and a diffusing sheet disposed at an image-watching side in order to diffuse image light at least in a horizontal direction of the screen. The Fresnel lens sheet has a plurality of entrance-side prisms formed at the image generation source side, and a plurality of exit-side prisms formed at the image-watching side, and the Fresnel lens sheet emits lights in a first direction and a second direction. The first direction is almost parallel to a central axis of the Fresnel lens sheet, and the second direction extends toward the central axis.

Abstract: A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.

Abstract: An imaging system includes a solid-state imaging device (101) configured to convert light into an electrical signal to output a captured-image signal, an AFE unit (107) configured to process the captured-image signal from the solid-state imaging device, an image acquiring unit (110) configured to acquire an image having a specific color from the AFE unit (107), a noise detector (112) configured to detect noise of the specific-color image acquired by the image acquiring unit (110), and an AFE power-down controller (111) configured to control timing of power supply to the AFE unit (107) during a horizontal or vertical blanking period based on an amount of the noise detected by the noise detector.

Abstract: A Fresnel lens sheet used for an image display device is disclosed. The Fresnel lens sheet is provided with a first prism group in an area of a light entrance plane of the Fresnel lens sheet where the incident angle of light is equal to or more than a predetermined incident angle and a second prism group in an area of a light entrance plane of the Fresnel lens sheet where the incident angle of light is less than the predetermined value.

Abstract: A projection display is capable of suppressing both the trapezoidal distortion of an enlarged image projected on a screen by oblique projection and aberrations resulting from oblique projection and includes a projection optical system provided with lenses that can be easily manufactured and assembled. The projection optical system for obliquely projecting an image formed by a display device on the screen includes a free curved lens having a rotationally asymmetric free curved surface. The free curved lens has fringing parts having outlines of a shape coinciding with an arc of a circle having the center on the optical axis of the free curved lens.

Abstract: A susceptor having the most basic structure has a three-layer structure including a first and a second transparent quartz part and an opaque quartz part sandwiched therebetween. For example, the opaque quartz part is made of “foamed quartz”. In addition, the opacity of the opaque quartz part to flash light is determined to fall within an appropriate range based on the material or thickness of the opaque quartz part, taking into consideration the composition or thickness of a thin film formed on the substrate and various conditions concerning the energy of the irradiation light during flash light irradiation or the like. The stack structure may be composed of a stack of a plurality of opaque quartz layers having different opacities.

Abstract: A half-tone stacked film is designed so as to have a stacked structure of a first half-tone film and a second half-tone film, and the film thickness d, the refractive index n to exposure light and the extinction coefficient k of these half-tone films are designed so that one of these half-tone films becomes a phase advancement film and the other becomes a phase retardation film. When the film thickness (nm), the refractive index, and the extinction coefficient of the phase advancement film are represented by d(+), n(+) and k(+), respectively; and the film thickness (nm), the refractive index, and the extinction coefficient of the phase retardation film are d(?), n(?), and k(?), respectively; the phase advancement film has the relationship of k(+)>a1·n(+)+b1, and the phase retardation film has the relationship of k(?)<a2·n(?)+b2.

Abstract: A light-shieldable film is formed on one principal plane of an optically transparent substrate, and the light-shieldable film has a first light-shieldable film and a second light-shieldable film overlying the first light-shieldable film. The first light-shieldable film is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.

Abstract: A projection image display device is disclosed in which a trapezoidal distortion and/or aberration are restrained when an image is enlarged and projected obliquely onto a screen. An image generator is connected to an optical system base in such a manner that at least an inclination thereof (on an axis parallel to X axis) with respect to a vertical line and a distance thereof in forward and backward direction (Z axis direction) can be adjusted by an adjusting mechanism. Further, a projecting lens 2 as a first optical system and a free-form curved surface mirror as a second optical system are fixed to the optical system base. The free-form curved surface mirror is rotatable (on an rotary axis parallel to X axis) with respect to the vertical line at a substantial center of the free-form curved surface mirror.

Abstract: On a substrate that is transparent to exposure light, a phase-shift multilayer film including a stack of two layers of a metal silicide compound is formed. A stabilized oxide layer is formed on the surface of the metal silicide compound layer close to the top surface. The layer close to the substrate (the lower layer) of the phase-shift multilayer film is made of a relatively-metal-rich metal silicide compound, and the upper layer is made of a relatively-metal-poor metal silicide compound. The stabilized oxide layer has a metal-poor composition, and the metal content thereof is equal to or less than one third of the metal content of the lower layer. Thus, the stabilized oxide layer is highly chemically stable and has a high chemical resistance.

Abstract: A metal film is provided as a light shielding layer on one principle surface of a photomask substrate. The metal film cannot be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and can be etched by chlorine-based dry etching not containing oxygen (Cl-based dry etching) and fluorine-based dry etching (F-based dry etching). On the light shielding layer, a metal compound film as an antireflective layer. The metal compound film cannot be substantially etched by chlorine-based dry etching not containing oxygen (Cl based) and can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O) based) and fluorine-based dry etching (F based).

Abstract: For the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising Si, Mo and Zr at the same time, a target comprising at least Zr and Mo in a molar ratio Zr/Mo between 0.05 and 5 is useful.

Abstract: Both ends of a transparent cover which is formed of a curved member are fitted to a lens guard and a mirror guard, and a free-shaped surface mirror and a free-shaped surface lens are housed in a sealed space defined within a projection type image display device.

Abstract: A projection image display device is disclosed in which a trapezoidal distortion and/or aberration are restrained when an image is enlarged and projected obliquely onto a screen. An image generator is connected to an optical system base in such a manner that at least an inclination thereof (on an axis parallel to X axis) with respect to a vertical line and a distance thereof in forward and backward direction (Z axis direction) can be adjusted by an adjusting mechanism. Further, a projecting lens 2 as a first optical system and a free-form curved surface mirror as a second optical system are fixed to the optical system base. The free-form curved surface mirror is rotatable (on an rotary axis parallel to X axis) with respect to the vertical line at a substantial center of the free-form curved surface mirror.

Abstract: Image disturbance called speckle noise occurs when an image generator has a small effective screen size and a projection lens has a small effective diameter. The present invention is intended to reduce speckle noise. In an optical projector, a viewing angle enlarging ember (60) for enlarging viewing angle or a scattering member (28) for scattering image light is disposed near an image display device (18), such as a liquid crystal panel. Speckle noise can be reduced, suppressing the deterioration of resolution and contrast.

Abstract: In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom % of silicon and a plurality of metal elements, typically Mo and Zr or Hf.

Abstract: To eliminate or otherwise reduce non-uniform brightness of an image of a display apparatus, an image is projected through a projection optical system having a projection lens (2), curved surface reflection mirrors (4 and 5), and a reflection mirror (6) onto a rear surface of the rear-surface projection type screen (3). The rear-surface projection type screen includes a Fresnel lens sheet (8), wherein the prism surfaces of the Fresnel lens are formed in an aspheric configuration, thereby letting the light beams from the screen to exit at an exit angle of about zero (0) degree relative to a line perpendicular to the screen surface, over most of the entire surface thereof. It is possible to obtain a projection image that having uniform brightness in an image display apparatus while maintaining a thin cabinet (7) profile.