Patents by Inventor Hiroko Yamazaki

Hiroko Yamazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8026660
    Abstract: The present invention provides a white organic light-emitting element high in the emission efficiency. In particular, the invention provides a white organic light-emitting element that has an emission spectrum having peaks in the respective wavelength regions of red color, green color and blue color and is high in the emission efficiency. Since a spectrum region lowest in the emission efficiency is a red region, by introducing a reddish phosphorescent material, a highly efficient white organic light-emitting element is obtained. At this time, in order to inhibit the reddish phosphorescent material from singularly emitting, as shown in FIG. 1, a distance between a second emission region 114 where a reddish phosphorescent material 124 is a luminescent material and a first emission region 113 that exhibits emission in a shorter wavelength side than the second emission region is separated. In a configuration shown in FIG.
    Type: Grant
    Filed: February 13, 2009
    Date of Patent: September 27, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroko Yamazaki, Satoshi Seo
  • Publication number: 20110227119
    Abstract: By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an anode and a cathode, there is provided an organic structure including alternately laminated organic thin film layer (functional organic thin film layer) realizing various functions by making an SCLC flow, and a conductive thin film layer (ohmic conductive thin film layer) imbued with a dark conductivity by doping it with an acceptor and a donor, or by the like method.
    Type: Application
    Filed: June 1, 2011
    Publication date: September 22, 2011
    Inventors: Tetsuo Tsutsui, Hiroko Yamazaki, Satoshi Seo
  • Publication number: 20110227125
    Abstract: By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an anode and a cathode, there is provided an organic structure including alternately laminated organic thin film layer (functional organic thin film layer) realizing various functions by making an SCLC flow, and a conductive thin film layer (ohmic conductive thin film layer) imbued with a dark conductivity by doping it with an acceptor and a donor, or by the like method.
    Type: Application
    Filed: June 1, 2011
    Publication date: September 22, 2011
    Inventors: Tetsuo Tsutsui, Hiroko Yamazaki, Satoshi Seo
  • Publication number: 20110204353
    Abstract: A high efficient white emission light emitting element having peak intensity in each wavelength region of red, green, and blue is provided. Specifically, a white emission light emitting element having an emission spectrum that is independent of current density is provided. A first light emitting layer 312 exhibiting blue emission and a second light emitting layer 313 containing a phosphorescent material that generates simultaneously phosphorescent emission and excimer emission are combined. In order to derive excimer emission from the phosphorescent material, it is effective to disperse a phosphorescent material 323 having a high planarity structure such as platinum complex at a high concentration of at least 10 wt % to a host material 322. Further, the first light emitting layer 312 is provided to be in contact with the second light emitting layer 313 at the side of an anode. Ionization potential of the second light emitting layer 313 is preferably larger by 0.
    Type: Application
    Filed: April 29, 2011
    Publication date: August 25, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventor: Hiroko Yamazaki
  • Patent number: 7956353
    Abstract: By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an anode and a cathode, there is provided an organic structure including alternately laminated organic thin film layer (functional organic thin film layer) realizing various functions by making an SCLC flow, and a conductive thin film layer (ohmic conductive thin film layer) imbued with a dark conductivity by doping it with an acceptor and a donor, or by the like method.
    Type: Grant
    Filed: August 21, 2008
    Date of Patent: June 7, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuo Tsutsui, Hiroko Yamazaki, Satoshi Seo
  • Patent number: 7956349
    Abstract: By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an anode and a cathode, there is provided an organic structure including alternately laminated organic thin film layer (functional organic thin film layer) realizing various functions by making an SCLC flow, and a conductive thin film layer (ohmic conductive thin film layer) imbued with a dark conductivity by doping it with an acceptor and a donor, or by the like method.
    Type: Grant
    Filed: December 4, 2002
    Date of Patent: June 7, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuo Tsutsui, Hiroko Yamazaki, Satoshi Seo
  • Patent number: 7943925
    Abstract: A high efficient white emission light emitting element having peak intensity in each wavelength region of red, green, and blue is provided. Specifically, a white emission light emitting element having an emission spectrum that is independent of current density is provided. A first light emitting layer 312 exhibiting blue emission and a second light emitting layer 313 containing a phosphorescent material that generates simultaneously phosphorescent emission and excimer emission are combined. In order to derive excimer emission from the phosphorescent material, it is effective to disperse a phosphorescent material 323 having a high planarity structure such as platinum complex at a high concentration of at least 10 wt % to a host material 322. Further, the first light emitting layer 312 is provided to be in contact with the second light emitting layer 313 at the side of an anode. Ionization potential of the second light emitting layer 313 is preferably larger by 0.
    Type: Grant
    Filed: March 8, 2004
    Date of Patent: May 17, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hiroko Yamazaki
  • Patent number: 7838870
    Abstract: By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an anode and a cathode, there is provided an organic structure including alternately laminated organic thin film layer (functional organic thin film layer) realizing various functions by making an SCLC flow, and a conductive thin film layer (ohmic conductive thin film layer) imbued with a dark conductivity by doping it with an acceptor and a donor, or by the like method.
    Type: Grant
    Filed: December 4, 2002
    Date of Patent: November 23, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuo Tsutsui, Hiroko Yamazaki, Satoshi Seo
  • Publication number: 20100237342
    Abstract: A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized.
    Type: Application
    Filed: June 4, 2010
    Publication date: September 23, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hiroko YAMAZAKI, Atsushi TOKUDA, Tetsuo TSUTSUI
  • Patent number: 7744949
    Abstract: A method of manufacturing a light emitting device of upward emission type and a thin film forming apparatus used in the method are provided. A plurality of film forming chambers are connected to a first transferring chamber. The plural film forming chambers include a metal material evaporation chamber, an EL layer forming chamber, a sputtering chamber, a CVD chamber, and a sealing chamber. By using this thin film forming apparatus, an upward emission type EL element can be fabricated without exposing the element to the outside air. As a result, a highly reliable light emitting device is obtained.
    Type: Grant
    Filed: December 4, 2008
    Date of Patent: June 29, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshimitsu Konuma, Hiroko Yamazaki
  • Patent number: 7737437
    Abstract: A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized.
    Type: Grant
    Filed: December 16, 2008
    Date of Patent: June 15, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd
    Inventors: Hiroko Yamazaki, Atsushi Tokuda, Tetsuo Tsutsui
  • Patent number: 7737630
    Abstract: An EL element which is thicker and lower-voltage drive without doping acceptor or donor than the conventional one. An EL element in which an electroluminescent film 103 containing an organic compound which can provide electroluminescent, a floating electrode 104, an electron transport supporting layer 105 and a cathode 102 are in order laminated on an anode 101. A film thickness of the electroluminescent film 103 is on the order of a conventional film thickness (on the order of approximately 100 nm), and the electron transport supporting layer 105 may also have a film thickness on the order of the electroluminescent film 103. The EL element can be driven at lower voltage than the conventional one by introducing a hole blocking material into an electron transport supporting layer.
    Type: Grant
    Filed: May 2, 2006
    Date of Patent: June 15, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Hiroko Yamazaki
  • Patent number: 7642713
    Abstract: An EL element which is thicker and lower-voltage drive without doping acceptor or donor than the conventional one. An EL element in which an electroluminescent film 103 containing an organic compound which can provide electroluminescent, a floating electrode 104, an electron transport supporting layer 105 and a cathode 102 are in order laminated on an anode 101. A film thickness of the electroluminescent film 103 is on the order of a conventional film thickness (on the order of approximately 100 nm), and the electron transport supporting layer 105 may also have a film thickness on the order of the electroluminescent film 103. The EL element can be driven at lower voltage than the conventional one by introducing a hole blocking material into an electron transport supporting layer.
    Type: Grant
    Filed: May 2, 2006
    Date of Patent: January 5, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Hiroko Yamazaki
  • Patent number: 7592193
    Abstract: In an active matrix type light emitting device, a top surface exit type light emitting device in which an anode formed at an upper portion of an organic compound layer becomes a light exit electrode is provided. In a light emitting element made of a cathode, an organic compound layer and an anode, a protection film is formed in an interface between the anode that is a light exit electrode and the organic compound layer. The protection film formed on the organic compound layer has transmittance in the range of 70 to 100%, and when the anode is deposited by use of the sputtering method, a sputtering damage to the organic compound layer can be inhibited from being inflicted.
    Type: Grant
    Filed: October 14, 2005
    Date of Patent: September 22, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toshimitsu Konuma, Hiroko Yamazaki
  • Publication number: 20090174308
    Abstract: The present invention provides a white organic light-emitting element high in the emission efficiency. In particular, the invention provides a white organic light-emitting element that has an emission spectrum having peaks in the respective wavelength regions of red color, green color and blue color and is high in the emission efficiency. Since a spectrum region lowest in the emission efficiency is a red region, by introducing a reddish phosphorescent material, a highly efficient white organic light-emitting element is obtained. At this time, in order to inhibit the reddish phosphorescent material from singularly emitting, as shown in FIG. 1, a distance between a second emission region 114 where a reddish phosphorescent material 124 is a luminescent material and a first emission region 113 that exhibits emission in a shorter wavelength side than the second emission region is separated. In a configuration shown in FIG.
    Type: Application
    Filed: February 13, 2009
    Publication date: July 9, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hiroko YAMAZAKI, Satoshi SEO
  • Publication number: 20090155941
    Abstract: A method of manufacturing a light emitting device of upward emission type and a thin film forming apparatus used in the method are provided. A plurality of film forming chambers are connected to a first transferring chamber. The plural film forming chambers include a metal material evaporation chamber, an EL layer forming chamber, a sputtering chamber, a CVD chamber, and a sealing chamber. By using this thin film forming apparatus, an upward emission type EL element can be fabricated without exposing the element to the outside air. As a result, a highly reliable light emitting device is obtained.
    Type: Application
    Filed: December 4, 2008
    Publication date: June 18, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Toshimitsu Konuma, Hiroko Yamazaki
  • Publication number: 20090121626
    Abstract: A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized.
    Type: Application
    Filed: December 16, 2008
    Publication date: May 14, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hiroko YAMAZAKI, Atsushi TOKUDA, Tetsuo TSUTSUI
  • Patent number: 7531657
    Abstract: A method for preparing a compound represented by the following general formula (5) where, n is an integer of 0 to 3; and Y represents a protecting group for an amino group, the method including the steps of reacting a compound represented by the following general formula (3) where n and Y are as described above, with a silylating agent, and subsequently reacting it with P (?O) T3, where T represents a halogen atom, and further with ammonia.
    Type: Grant
    Filed: December 16, 2002
    Date of Patent: May 12, 2009
    Assignee: Nippon Kayaku Kabushiki Kaisha
    Inventors: Masashi Nagai, Hiroko Yamazaki, Keiichirou Yamamoto, Masatoshi Abe
  • Patent number: 7504771
    Abstract: The present invention provides a white organic light-emitting element high in the emission efficiency. In particular, the invention provides a white organic light-emitting element that has an emission spectrum having peaks in the respective wavelength regions of red color, green color and blue color and is high in the emission efficiency. Since a spectrum region lowest in the emission efficiency is a red region, by introducing a reddish phosphorescent material, a highly efficient white organic light-emitting element is obtained. At this time, in order to inhibit the reddish phosphorescent material from singularly emitting, as shown in FIG. 1, a distance between a second emission region 114 where a reddish phosphorescent material 124 is a luminescent material and a first emission region 113 that exhibits emission in a shorter wavelength side than the second emission region is separated. In a configuration shown in FIG.
    Type: Grant
    Filed: December 28, 2005
    Date of Patent: March 17, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroko Yamazaki, Satoshi Seo
  • Publication number: 20090045738
    Abstract: By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an anode and a cathode, there is provided an organic structure including alternately laminated organic thin film layer (functional organic thin film layer) realizing various functions by making an SCLC flow, and a conductive thin film layer (ohmic conductive thin film layer) imbued with a dark conductivity by doping it with an acceptor and a donor, or by the like method.
    Type: Application
    Filed: August 21, 2008
    Publication date: February 19, 2009
    Inventors: Tetsuo Tsutsui, Hiroko Yamazaki, Satoshi Seo