Patents by Inventor Hiroko Yamazaki

Hiroko Yamazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090048446
    Abstract: A compound represented by the following formula (1): [wherein R1 and R2 each independently represents hydroxy, provided that R1 and R2 may be bonded to each other to form methylenedioxy, etc.; X represents halogeno; and R3 represents a protective is subjected to a cyclization reaction with the aid of an organic silyl hydride and then aromatized with an oxidizing agent to produce a benzo [c] phenanthridine derivative represented by the following formula (2): [wherein R1, R2, and R3 have the same meanings as defined above].
    Type: Application
    Filed: November 11, 2005
    Publication date: February 19, 2009
    Inventors: Hiroko Yamazaki, Akira Masuda
  • Patent number: 7488986
    Abstract: In an active matrix type light emitting device, an upper surface injection type light emitting device in which an anode formed on the upper portion of the organic compound layer becomes an electrode for taking out the light is provided. In a light emitting element consisting of an cathode, an organic compound layer and an anode, it is characterized in that a protector is formed on the interface between the anode being an electrode for taking out the light and the organic compound layer. Noted that the protector formed on the organic compound layer has a transmittance of 70-100%, and the damage given to the organic compound layer when the anode is formed by a sputtering method can be prevented.
    Type: Grant
    Filed: October 24, 2002
    Date of Patent: February 10, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toshimitsu Konuma, Hiroko Yamazaki
  • Patent number: 7482626
    Abstract: A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized.
    Type: Grant
    Filed: October 29, 2007
    Date of Patent: January 27, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroko Yamazaki, Atsushi Tokuda, Tetsuo Tsutsui
  • Patent number: 7476451
    Abstract: There is provided an electroluminescent element using a material that is excellent in film forming properties and carrier transporting properties, emits a light in the solid state, and can be suitably used also as a host material. The electroluminescent element has an electroluminescence layer between a couple of electrodes, and a complex of a Group 4 metal of the periodic table, which is excellent in the film forming properties and the carrier transporting properties and capable of emitting a light in the solid state, is used in a part of the electroluminescence layer to form the electroluminescent element. The complex of a Group 4 metal of the periodic table has an emission wavelength on a longer wavelength side as compared with conventional host materials such as Alq3, and thereby may be combined with a red light emitting guest material to form a light emitting layer.
    Type: Grant
    Filed: November 17, 2003
    Date of Patent: January 13, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Harue Nakashima, Satoshi Seo, Takako Takasu, Hiroko Yamazaki
  • Patent number: 7473575
    Abstract: A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized.
    Type: Grant
    Filed: December 16, 2003
    Date of Patent: January 6, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroko Yamazaki, Atsushi Tokuda, Tetsuo Tsutsui
  • Patent number: 7473923
    Abstract: By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an anode and a cathode, there is provided an organic structure including alternately laminated organic thin film layer (functional organic thin film layer) realizing various functions by making an SCLC flow, and a conductive thin film layer (ohmic conductive thin film layer) imbued with a dark conductivity by doping it with an acceptor and a donor, or by the like method.
    Type: Grant
    Filed: November 14, 2005
    Date of Patent: January 6, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuo Tsutsui, Hiroko Yamazaki, Satoshi Seo
  • Patent number: 7462372
    Abstract: A method of manufacturing a light emitting device of upward emission type and a thin film forming apparatus used in the method are provided. A plurality of film forming chambers are connected to a first transferring chamber. The plural film forming chambers include a metal material evaporation chamber, an EL layer forming chamber, a sputtering chamber, a CVD chamber, and a sealing chamber. By using this thin film forming apparatus, an upward emission type EL element can be fabricated without exposing the element to the outside air. As a result, a highly reliable light emitting device is obtained.
    Type: Grant
    Filed: September 7, 2001
    Date of Patent: December 9, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshimitsu Konuma, Hiroko Yamazaki
  • Patent number: 7420203
    Abstract: By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an anode and a cathode, there is provided an organic structure including alternately laminated organic thin film layer (functional organic thin film layer) realizing various functions by making an SCLC flow, and a conductive thin film layer (ohmic conductive thin film layer) imbued with a dark conductivity by doping it with an acceptor and a donor, or by the like method.
    Type: Grant
    Filed: February 18, 2005
    Date of Patent: September 2, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuo Tsutsui, Hiroko Yamazaki, Satoshi Seo
  • Patent number: 7407422
    Abstract: To provide a light emitting element having a top emission structure, which can be easily manufactured without considering an ionization potential of an electrode (particularly an electrode in contact with a substrate) and a manufacturing method therefor. A light emitting device having the top emission structure according to the present invention includes: a first electrode (101) formed of general-purpose metal (specifically, a wiring material such as Ti or Al) having a light-shielding property or reflectivity; a conductive polymer layer (102) formed by applying a conductive polymer material onto the first electrode (101); an electroluminescence film (103) formed in contact with the conductive polymer layer (102); and a light-transmissive second electrode (104) formed on the electroluminescence film 103, in which the conductive polymer layer (102) is formed of materials including a redox polymer etc., while being free of problems regarding work function (as shown in FIG. 1A).
    Type: Grant
    Filed: June 23, 2006
    Date of Patent: August 5, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Hiroko Yamazaki
  • Publication number: 20080143254
    Abstract: A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized.
    Type: Application
    Filed: October 29, 2007
    Publication date: June 19, 2008
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroko Yamazaki, Atsushi Tokuda, Tetsuo Tsutsui
  • Patent number: 7355340
    Abstract: The present invention is to provide quinoxaline derivatives, which have excellent electron transportation and hole blocking properties, and which can be formed into a film without being crystallized. According to the invention, quinoxaline derivatives represented by the general [formula 1] are synthesized. (wherein X and Y represent a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group, and R1 to R6 represent individually hydrogen, an alkyl group, an alkoxyl group, a substituted or unsubstituted aryl group, and a substituted or unsubstituted heterocyclic group. Further, an organic semiconductor device including an electroluminescent device containing the foregoing quinoxaline derivatives is formed.
    Type: Grant
    Filed: November 13, 2003
    Date of Patent: April 8, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Hiroko Yamazaki, Satoshi Seo
  • Patent number: 7345417
    Abstract: An organic light-emitting device is manufactured, which is formed laminating an electroluminescent layer (111) including an electroluminescent organic compound and a cathode (109) sequentially on anode (101). The electroluminescent layer (111) has a hole blocking layer (106), and this hole blocking layer (106) is formed of two or more kinds of materials. It is possible to manufacture a high-efficiency and high-reliability organic light-emitting device by introducing the hole blocking layer like this.
    Type: Grant
    Filed: December 18, 2003
    Date of Patent: March 18, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Satoshi Seo, Harue Nakashima, Hiroko Yamazaki
  • Publication number: 20080012482
    Abstract: To provide a material for an electroluminescence element of which a buffer layer can be formed without using water as a solvent unlike a conventional polymer material used in a buffer layer, and an electroluminescence element using the same. According to the present invention, in an electroluminescence (EL) element including a first electrode (101), a buffer layer (102), an electroluminescence (EL) film (103), and a second electrode (104) (as shown in FIG. 1A), a conductive material is used as the buffer layer (102) formed on the first electrode (101). The conductive material includes: a polymer compound (so-called conjugate polymer) soluble in an organic solvent, which has a conjugate on a main or side chain thereof; and a compound soluble in an organic solvent, which has acceptor or donor properties for the polymer compound.
    Type: Application
    Filed: July 5, 2007
    Publication date: January 17, 2008
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Satoshi Seo, Hiroko Yamazaki
  • Patent number: 7192535
    Abstract: It is intended to provide a novel material having no absorption or low absorption intensity in the visible region and to provide an electroluminescent device excellent in hole injection characteristic by using the novel material. A novel organic material wherein two electron abundant aromatic rings inherently having a low ionization potential, such as a thiophene ring, a furan ring, and pyrrol ring, is intervened by a conjugated substituent such as a phenylene ring is provided. The electroluminescent device having an excellent hole injection characteristic is provided by using this novel organic material.
    Type: Grant
    Filed: March 12, 2004
    Date of Patent: March 20, 2007
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takako Takasu, Hiroko Yamazaki, Satoshi Seo, Ryoji Nomura, Hideko Inoue
  • Publication number: 20060234416
    Abstract: To provide a light emitting element having a top emission structure, which can be easily manufactured without considering an ionization potential of an electrode (particularly an electrode in contact with a substrate) and a manufacturing method therefor. A light emitting device having the top emission structure according to the present invention includes: a first electrode (101) formed of general-purpose metal (specifically, a wiring material such as Ti or Al) having a light-shielding property or reflectivity; a conductive polymer layer (102) formed by applying a conductive polymer material onto the first electrode (101); an electroluminescence film (103) formed in contact with the conductive polymer layer (102); and a light-transmissive second electrode (104) formed on the electroluminescence film 103, in which the conductive polymer layer (102) is formed of materials including a redox polymer etc., while being free of problems regarding work function (as shown in FIG. 1A).
    Type: Application
    Filed: June 23, 2006
    Publication date: October 19, 2006
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Satoshi Seo, Hiroko Yamazaki
  • Publication number: 20060211047
    Abstract: It is an object of the present invention to significantly improve the treatment efficiency of bronchial asthma by intervening with inhaled steroids or the like and discontinuing the intervention at the most appropriate times respectively on the basis of accurately and objectively grasping the pathologic condition of an asthma patient among others. To achieve the above object, the present invention provides a method for inspecting the condition of a disease derived from a test sample by measuring the amounts of cytokines (IL-5, IL-6, IL-8, IL-10, TNF-?, IL-1?, IFN-?, etc.) and/or chemokines in the test sample, and also a test kit for inspecting the condition of the disease, the test kit comprising a checking means for measuring the amounts of the cytokines in the test sample based on the method, a means for placing the test sample, and a means for allowing the test sample to access the checking means.
    Type: Application
    Filed: December 14, 2005
    Publication date: September 21, 2006
    Applicant: KineTech Diagnostics, Inc.
    Inventors: Minami Mutsuhiko, Hiroko Yamazaki
  • Publication number: 20060192484
    Abstract: An EL element which is thicker and lower-voltage drive without doping acceptor or donor than the conventional one. An EL element in which an electroluminescent film 103 containing an organic compound which can provide electroluminescent, a floating electrode 104, an electron transport supporting layer 105 and a cathode 102 are in order laminated on an anode 101. A film thickness of the electroluminescent film 103 is on the order of a conventional film thickness (on the order of approximately 100 nm), and the electron transport supporting layer 105 may also have a film thickness on the order of the electroluminescent film 103. The EL element can be driven at lower voltage than the conventional one by introducing a hole blocking material into an electron transport supporting layer.
    Type: Application
    Filed: May 2, 2006
    Publication date: August 31, 2006
    Inventors: Satoshi Seo, Hiroko Yamazaki
  • Publication number: 20060164006
    Abstract: The present invention provides a white organic light-emitting element high in the emission efficiency. In particular, the invention provides a white organic light-emitting element that has an emission spectrum having peaks in the respective wavelength regions of red color, green color and blue color and is high in the emission efficiency. Since a spectrum region lowest in the emission efficiency is a red region, by introducing a reddish phosphorescent material, a highly efficient white organic light-emitting element is obtained. At this time, in order to inhibit the reddish phosphorescent material from singularly emitting, as shown in FIG. 1, a distance between a second emission region 114 where a reddish phosphorescent material 124 is a luminescent material and a first emission region 113 that exhibits emission in a shorter wavelength side than the second emission region is separated. In a configuration shown in FIG.
    Type: Application
    Filed: December 28, 2005
    Publication date: July 27, 2006
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroko Yamazaki, Satoshi Seo
  • Patent number: 7075228
    Abstract: To provide a light emitting element having a top emission structure, which can be easily manufactured without considering an ionization potential of an electrode (particularly an electrode in contact with a substrate) and a manufacturing method therefor. A light emitting device having the top emission structure according to the present invention includes: a first electrode (101) formed of general-purpose metal (specifically, a wiring material such as Ti or Al) having a light-shielding property or reflectivity; a conductive polymer layer (102) formed by applying a conductive polymer material onto the first electrode (101); an electroluminescence film (103) formed in contact with the conductive polymer layer (102); and a light-transmissive second electrode (104) formed on the electroluminescence film 103, in which the conductive polymer layer (102) is formed of materials including a redox polymer etc., while being free of problems regarding work function (as shown in FIG. 1A).
    Type: Grant
    Filed: November 22, 2004
    Date of Patent: July 11, 2006
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Hiroko Yamazaki
  • Patent number: 7072485
    Abstract: A meshed etching tunnel made of aluminum is disposed inside a cylindrical quartz reactive chamber, and speaker diaphragms are aligned inside the tunnel at a certain interval. Opposing electrodes are disposed outside the reactive chamber. Plasma is applied at low temperature to prevent heat deformation. Uniform wettability is also assured by the use of the meshed etching tunnel, achieving high productivity. Uniform wettability further stabilizes bonding and improves bonding strength of the speaker diaphragm onto the voice coil and edge, offering a speaker with improved input power durability.
    Type: Grant
    Filed: July 3, 2003
    Date of Patent: July 4, 2006
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hitoshi Sato, Sinya Mizone, Kiyoshi Ikeda, Hiroko Yamazaki