Abstract: A method of forming a thin film for a semiconductor device, for forming a metal thin film by chemical vapor deposition on an intermediate layer which is provided on a substrate, comprises the steps of activating the surface of the intermediate layer by introducing a halide gas of a metal for forming the thin film onto the surface of the intermediate layer, forming nuclei on the surface of the intermediate layer by introducing a silane-system gas onto the activated surface of the intermediate layer, and introducing the halide gas and a reducing gas onto the surface of the intermediate layer formed with the nuclei, thereby depositing the metal thin film on the surface of the intermediate layer.

Abstract: A method of and an apparatus for removing a naturally grown oxide film and contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface. The semiconductor substrate is placed in a pretreatment chamber and then hydrogen chloride gas is introduced into the chamber. Then, the semiconductor substrate is heated at a temperature between 200.degree..about.700.degree. C. and the surface of the semiconductor substrate is irradiated with ultraviolet rays, whereby the naturally grown oxide film and other contaminants on the semiconductor substrate can be removed. Then, a thin film is formed on the cleaned surface of the semiconductor substrate by a CVD method or a sputter method. According to this method, the naturally oxide film and other contaminants can be removed from the surface of the semiconductor substrate at a low temperature and the thin film can be formed on the cleaned surface.

Abstract: A MOCVD apparatus comprises a base, an outer vessel extending upward from the base to form a closed space between the base and the outer vessel, an inner vessel provided in the space such that the inner vessel extends upward from the base in correspondence to the outer vessel to form a closed second space and forming a reaction chamber between the outer vessel and the inner vessel, a gas inlet formed at an upper end of the outer vessel for introducing a source gas into the reaction chamber, a gas outlet formed at the base in correspondence to the reaction chamber for evacuating the reaction chamber, the outer vessel and inner vessel being configured to induce a directional flow of gas in the reaction chamber from the gas inlet to the base, a susceptor provided on the inner vessel to extend generally parallel to the directional flow of the gas for supporting a substrate thereon, a plurality of ring-shaped lamps provided in the second space with a substantially concentric relationship with each other such that

Abstract: A transfer chamber is provided between MOCVD reaction chamber and load lock chamber, connected to each chamber through an opening for each, for preventing the reaction chamber from the invasion of foreign gases, which may oxydize metals of MOCVD. The load lock chamber can be evacuated or filled with an inert gas, and has a door to the outside for bringing semiconductor wafers in or out. The transfer chamber is provided with a gas inlet and a gas outlet, through each of them an inert gas is always fed and drained for circulation, and also provided with a transfer mechanism therein for transferring wafers between the load lock chamber and the reaction chamber. Wafers are placed on a susceptor connected to the lid, which is driven by the transfer mechanism. A liner tube for protecting the inner surface of the reaction chamber from undesirable contamination caused by MOCVD reaction may be provided detachably attached to the lid to enclose the wafer.

Abstract: An apparatus for photochemically forming a film on a substrate using a photo-induced chemical vapor deposition method comprises an optical lens through which a light beam is radiated to a reactive atmosphere gas to deposit and grow a film uniform in thickness on a substrate.

Abstract: A laser-induced CVD method in accordance with this invention comprises the steps of: setting a substrate in a reactive gas; applying a laser beam to the reactive gas to decompose it and produce not only free radicals but also ions due to multiphoton absorption; and applying an electric field thereby to efficiently transport the ions toward the substrate and deposit a thin film on the substrate at an increased deposition rate.