Patents by Inventor Hiromi Nobukata
Hiromi Nobukata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8843763Abstract: An integrated circuit includes a semiconductor-circuit layer; metal layers formed on the semiconductor-circuit layer, one of the metal layers being a metal layer in which an active shield is formed; and an antenna formed by patterning in at least one of the metal layers that are below the metal layer in which the active shield is formed. The semiconductor-circuit layer includes an encryption circuit configured to receive a drive voltage and to perform encryption arithmetic; a power-supply circuit configured to provide the drive voltage to the encryption circuit; and a circuit system configured to receive a power-supply voltage from an external power supply.Type: GrantFiled: September 9, 2010Date of Patent: September 23, 2014Assignee: Sony CorporationInventor: Hiromi Nobukata
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Patent number: 8370642Abstract: A cryptographic processing apparatus includes: at least one register configured to store data for operation; a first operation block configured to execute an operation in accordance with data stored in the register; a second operation block configured to execute a logic operation between one of a register-stored value and a key and an operation result of the first operation block; and a decode block configured to decode binary data in units of the predetermined number of bits to convert the binary data into decode data having the number of bits higher than the number of bits of the binary data.Type: GrantFiled: November 19, 2009Date of Patent: February 5, 2013Assignee: Sony CorporationInventor: Hiromi Nobukata
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Patent number: 8350574Abstract: An embodiment of the invention provides a circuit for detecting a malfunction generation attack, including: at least one sensor circuit adapted to detect a radiation of a light; and a detection circuit for detecting an intermediate voltage between a voltage corresponding to a High level and a voltage corresponding to a Low level in accordance with an output from the at least one sensor circuit, and outputting a detection signal. At least one sensor circuit has an output node a level at which is changed in accordance with the radiation of the light, and outputs a signal corresponding to the level at the output node which is changed in accordance with the radiation of the light. The detection circuit outputs the detection signal when a level of the output signal from the at least one sensor circuit reaches a level previously set.Type: GrantFiled: May 25, 2010Date of Patent: January 8, 2013Assignee: Sony CorporationInventor: Hiromi Nobukata
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Patent number: 8213603Abstract: Disclosed herein is an encryption processing apparatus including: a first register device; a second register device; a first flag operation device; a first operation device; a second operation device; a round operation device; a third and a fourth operation device; a second flag operation device; and a fifth operation device.Type: GrantFiled: March 5, 2010Date of Patent: July 3, 2012Assignee: Sony CorporationInventor: Hiromi Nobukata
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Publication number: 20110072277Abstract: An integrated circuit includes a semiconductor-circuit layer; metal layers formed on the semiconductor-circuit layer, one of the metal layers being a metal layer in which an active shield is formed; and an antenna formed by patterning in at least one of the metal layers that are below the metal layer in which the active shield is formed. The semiconductor-circuit layer includes an encryption circuit configured to receive a drive voltage and to perform encryption arithmetic; a power-supply circuit configured to provide the drive voltage to the encryption circuit; and a circuit system configured to receive a power-supply voltage from an external power supply.Type: ApplicationFiled: September 9, 2010Publication date: March 24, 2011Inventor: Hiromi NOBUKATA
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Publication number: 20100301873Abstract: An embodiment of the invention provides a circuit for detecting a malfunction generation attack, including: at least one sensor circuit adapted to detect a radiation of a light; and a detection circuit for detecting an intermediate voltage between a voltage corresponding to a High level and a voltage corresponding to a Low level in accordance with an output from the at least one sensor circuit, and outputting a detection signal. At least one sensor circuit has an output node a level at which is changed in accordance with the radiation of the light, and outputs a signal corresponding to the level at the output node which is changed in accordance with the radiation of the light. The detection circuit outputs the detection signal when a level of the output signal from the at least one sensor circuit reaches a level previously set.Type: ApplicationFiled: May 25, 2010Publication date: December 2, 2010Inventor: Hiromi NOBUKATA
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Publication number: 20100232602Abstract: Disclosed herein is an encryption processing apparatus including: a first register device; a second register device; a first flag operation device; a first operation device; a second operation device; a round operation device; a third and a fourth operation device; a second flag operation device; and a fifth operation device.Type: ApplicationFiled: March 5, 2010Publication date: September 16, 2010Inventor: Hiromi Nobukata
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Publication number: 20100153744Abstract: A cryptographic processing apparatus includes: at least one register configured to store data for operation; a first operation block configured to execute an operation in accordance with data stored in the register; a second operation block configured to execute a logic operation between one of a register-stored value and a key and an operation result of the first operation block; and a decode block configured to decode binary data in units of the predetermined number of bits to convert the binary data into decode data having the number of bits higher than the number of bits of the binary data.Type: ApplicationFiled: November 19, 2009Publication date: June 17, 2010Inventor: Hiromi NOBUKATA
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Patent number: 7450451Abstract: A nonvolatile memory system includes a drive voltage generator to generate a drive voltage on the basis of a power supply voltage; a plurality of normal memory cells serving as a nonvolatile memory storing data by accumulating charge of a polarity according to the data to be stored in a floating gate at a level according to the drive voltage generated by the drive voltage generator, the data being written in or read from the nonvolatile memory; a minimum voltage detecting memory cell serving as a nonvolatile memory in which charge of a level to cause a read error when the power supply voltage is equal to or lower than a minimum voltage of predetermined operation guarantee is accumulated in a floating gate; and a controller to output a read result of the normal memory cells if no read error occurs in a reading operation in the minimum voltage detecting memory cell.Type: GrantFiled: March 1, 2007Date of Patent: November 11, 2008Assignee: Sony CorporationInventor: Hiromi Nobukata
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Publication number: 20070217274Abstract: A nonvolatile memory system includes a drive voltage generator to generate a drive voltage on the basis of a power supply voltage; a plurality of normal memory cells serving as a nonvolatile memory storing data by accumulating charge of a polarity according to the data to be stored in a floating gate at a level according to the drive voltage generated by the drive voltage generator, the data being written in or read from the nonvolatile memory; a minimum voltage detecting memory cell serving as a nonvolatile memory in which charge of a level to cause a read error when the power supply voltage is equal to or lower than a minimum voltage of predetermined operation guarantee is accumulated in a floating gate; and a controller to output a read result of the normal memory cells if no read error occurs in a reading operation in the minimum voltage detecting memory cell.Type: ApplicationFiled: March 1, 2007Publication date: September 20, 2007Inventor: Hiromi Nobukata
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Patent number: 7145808Abstract: A nonvolatile semiconductor memory apparatus suitable to logic incorporation, by which a charge injection efficiency is high and hot electrons (HE) can be effectively injected at a low voltage is provided. A memory transistor (M) comprises first and second source/drain regions (S, SSL, D, SBL) formed on a semiconductor substrate (SUB, W), a charge storage film (GD) having a charge storage faculty and a gate electrode (WL). Memory peripheral circuits (2a to 9) generate a first voltage (Vd) and a second voltage (Vg-Vwell), apply the first voltage (Vd) to the second source/drain region (D, SBL) by using potential (0V) of the first source/drain region (S, SSL) as reference, apply the second voltage (Vg-Vwell) to the gate electrode (WL), generate hot electrons (HE) by ionization collision on the second source/drain region (D, SBL) side, and inject the hot electrons (HE) to the charge storage film (GD) from the second source/drain region (D, SBL) side at the time of writing data.Type: GrantFiled: March 15, 2005Date of Patent: December 5, 2006Assignee: Sony CorporationInventors: Ichiro Fujiwara, Hiromi Nobukata
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Patent number: 7142451Abstract: A nonvolatile semiconductor memory apparatus suitable to logic incorporation, by which a charge injection efficiency is high and hot electrons (HE) can be effectively injected at a low voltage is provided. A memory transistor (M) comprises first and second source/drain regions (S, SSL, D, SBL) formed on a semiconductor substrate (SUB, W), a charge storage film (GD) having a charge storage faculty and a gate electrode (WL). Memory peripheral circuits (2a to 9) generate a first voltage (Vd) and a second voltage (Vg?Vwell), apply the first voltage (Vd) to the second source/drain region (D, SBL) by using potential (0V) of the first source/drain region (S, SSL) as reference, apply the second voltage (Vg?Vwell) to the gate electrode (WL), generate hot electrons (HE) by ionization collision on the second source/drain region (D, SBL) side, and inject the hot electrons (HE) to the charge storage film (GD) from the second source/drain region (D, SBL) side at the time of writing data.Type: GrantFiled: April 1, 2005Date of Patent: November 28, 2006Assignee: Sony CorporationInventors: Ichiro Fujiwara, Hiromi Nobukata
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Patent number: 7102931Abstract: A nonvolatile semiconductor memory apparatus suitable to logic incorporation, by which a charge injection efficiency is high and hot electrons (HE) can be effectively injected at a low voltage is provided. A memory transistor (M) comprises first and second source/drain regions (S, SSL, D, SBL) formed on a semiconductor substrate (SUB, W), a charge storage film (GD) having a charge storage faculty and a gate electrode (WL). Memory peripheral circuits (2a to 9) generate a first voltage (Vd) and a second voltage (Vg?Vwell), apply the first voltage (Vd) to the second source/drain region (D, SBL) by using potential (0V) of the first source/drain region (S, SSL) as reference, apply the second voltage (Vg?Vwell) to the gate electrode (WL), generate hot electrons (HE) by ionization collision on the second source/drain region (D, SBL) side, and inject the hot electrons (HE) to the charge storage film (GD) from the second source/drain region (D, SBL) side at the time of writing data.Type: GrantFiled: March 15, 2005Date of Patent: September 5, 2006Assignee: Sony CorporationInventors: Ichiro Fujiwara, Hiromi Nobukata
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Patent number: 7088622Abstract: A nonvolatile semiconductor memory apparatus suitable to logic incorporation, by which a charge injection efficiency is high and hot electrons (HE) can be effectively injected at a low voltage is provided. A memory transistor (M) comprises first and second source/drain regions (S, SSL, D, SBL) formed on a semiconductor substrate (SUB, W), a charge storage film (GD) having a charge storage faculty and a gate electrode (WL). Memory peripheral circuits (2a to 9) generate a first voltage (Vd) and a second voltage (Vg-Vwell), apply the first voltage (Vd) to the second source/drain region (D, SBL) by using potential (0V) of the first source/drain region (S, SSL) as reference, apply the second voltage (Vg-Vwell) to the gate electrode (WL), generate hot electrons (HE) by ionization collision on the second source/drain region (D, SBL) side, and inject the hot electrons (HE) to the charge storage film (GD) from the second source/drain region (D, SBL) side at the time of writing data.Type: GrantFiled: April 1, 2005Date of Patent: August 8, 2006Assignee: Sony CorporationInventors: Ichiro Fujiwara, Hiromi Nobukata
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Publication number: 20050201189Abstract: A nonvolatile semiconductor memory apparatus suitable to logic incorporation, by which a charge injection efficiency is high and hot electrons (HE) can be effectively injected at a low voltage is provided. A memory transistor (M) comprises first and second source/drain regions (S, SSL, D, SBL) formed on a semiconductor substrate (SUB, W), a charge storage film (GD) having a charge storage faculty and a gate electrode (WL). Memory peripheral circuits (2a to 9) generate a first voltage (Vd) and a second voltage (Vg?Vwell), apply the first voltage (Vd) to the second source/drain region (D, SBL) by using potential (0V) of the first source/drain region (S, SSL) as reference, apply the second voltage (Vg?Vwell) to the gate electrode (WL), generate hot electrons (HE) by ionization collision on the second source/drain region (D, SBL) side, and inject the hot electrons (HE) to the charge storage film (GD) from the second source/drain region (D, SBL) side at the time of writing data.Type: ApplicationFiled: April 1, 2005Publication date: September 15, 2005Inventors: Ichiro Fujiwara, Hiromi Nobukata
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Publication number: 20050185499Abstract: A nonvolatile semiconductor memory apparatus suitable to logic incorporation, by which a charge injection efficiency is high and hot electrons (HE) can be effectively injected at a low voltage is provided. A memory transistor (M) comprises first and second source/drain regions (S, SSL, D, SBL) formed on a semiconductor substrate (SUB, W), a charge storage film (GD) having a charge storage faculty and a gate electrode (WL). Memory peripheral circuits (2a to 9) generate a first voltage (Vd) and a second voltage (Vg-Vwell), apply the first voltage (Vd) to the second source/drain region (D, SBL) by using potential (0V) of the first source/drain region (S, SSL) as reference, apply the second voltage (Vg-Vwell) to the gate electrode (WL), generate hot electrons (HE) by ionization collision on the second source/drain region (D, SBL) side, and inject the hot electrons (HE) to the charge storage film (GD) from the second source/drain region (D, SBL) side at the time of writing data.Type: ApplicationFiled: April 1, 2005Publication date: August 25, 2005Inventors: Ichiro Fujiwara, Hiromi Nobukata
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Publication number: 20050169085Abstract: A nonvolatile semiconductor memory apparatus suitable to logic incorporation, by which a charge injection efficiency is high and hot electrons (HE) can be effectively injected at a low voltage is provided. A memory transistor (M) comprises first and second source/drain regions (S, SSL, D, SBL) formed on a semiconductor substrate (SUB, W), a charge storage film (GD) having a charge storage faculty and a gate electrode (WL). Memory peripheral circuits (2a to 9) generate a first voltage (Vd) and a second voltage (Vg-Vwell), apply the first voltage (Vd) to the second source/drain region (D, SBL) by using potential (0V) of the first source/drain region (S, SSL) as reference, apply the second voltage (Vg-Vwell) to the gate electrode (WL), generate hot electrons (HE) by ionization collision on the second source/drain region (D, SBL) side, and inject the hot electrons (HE) to the charge storage film (GD) from the second source/drain region (D, SBL) side at the time of writing data.Type: ApplicationFiled: March 15, 2005Publication date: August 4, 2005Inventors: Ichiro Fujiwara, Hiromi Nobukata
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Publication number: 20050152187Abstract: A nonvolatile semiconductor memory apparatus suitable to logic incorporation, by which a charge injection efficiency is high and hot electrons (HE) can be effectively injected at a low voltage is provided. A memory transistor (M) comprises first and second source/drain regions (S, SSL, D, SBL) formed on a semiconductor substrate (SUB, W), a charge storage film (GD) having a charge storage faculty and a gate electrode (WL). Memory peripheral circuits (2a to 9) generate a first voltage (Vd) and a second voltage (Vg?Vwell), apply the first voltage (Vd) to the second source/drain region (D, SBL) by using potential (0V) of the first source/drain region (S, SSL) as reference, apply the second voltage (Vg?Vwell) to the gate electrode (WL), generate hot electrons (HE) by ionization collision on the second source/drain region (D, SBL) side, and inject the hot electrons (HE) to the charge storage film (GD) from the second source/drain region (D, SBL) side at the time of writing data.Type: ApplicationFiled: March 15, 2005Publication date: July 14, 2005Inventors: Ichiro Fujiwara, Hiromi Nobukata
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Patent number: 6903977Abstract: A nonvolatile semiconductor memory apparatus suitable to logic incorporation, by which a charge injection efficiency is high and hot electrons (HE) can be effectively injected at a low voltage is provided. A memory transistor (M) comprises first and second source/drain regions (S, SSL, D, SBL) formed on a semiconductor substrate (SUB, W), a charge storage film (GD) having a charge storage faculty and a gate electrode (WL). Memory peripheral circuits (2a to 9) generate a first voltage (Vd) and a second voltage (Vg-Vwell), apply the first voltage (Vd) to the second source/drain region (D, SBL) by using potential (0V) of the first source/drain region (S, SSL) as reference, apply the second voltage (Vg-Vwell) to the gate electrode (WL), generate hot electrons (HE) by ionization collision on the second source/drain region (D, SBL) side, and inject the hot electrons (HE) to the charge storage film (GD) from the second source/drain region (D, SBL) side at the time of writing data.Type: GrantFiled: September 25, 2002Date of Patent: June 7, 2005Assignee: Sony CorporationInventors: Ichiro Fujiwara, Hiromi Nobukata
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Publication number: 20040042295Abstract: A nonvolatile semiconductor memory apparatus suitable to logic incorporation, by which a charge injection efficiency is high and hot electrons (HE) can be effectively injected at a low voltage is provided. A memory transistor (M) comprises first and second source/drain regions (S, SSL, D, SBL) formed on a semiconductor substrate (SUB, W), a charge storage film (GD) having a charge storage faculty and a gate electrode (WL). Memory peripheral circuits (2a to 9) generate a first voltage (Vd) and a second voltage (Vg−Vwell), apply the first voltage (Vd) to the second source/drain region (D, SBL) by using potential (0V) of the first source/drain region (S, SSL) as reference, apply the second voltage (Vg−Vwell) to the gate electrode (WL), generate hot electrons (HE) by ionization collision on the second source/drain region (D, SBL) side, and inject the hot electrons (HE) to the charge storage film (GD) from the second source/drain region (D, SBL) side at the time of writing data.Type: ApplicationFiled: September 17, 2003Publication date: March 4, 2004Inventors: Ichiro Fujiwara, Hiromi Nobukata