Abstract: There is provided a vertical heat treatment apparatus for forming a film by supplying a precursor gas to a plurality of substrates that are held in a substantially horizontal posture on a substrate holder with a predetermined interval in a vertical direction. The apparatus includes a processing container including an inner tube accommodating the substrate holder and an outer tube that is disposed outside the inner tube; and a gas nozzle that extends vertically along an inner peripheral surface of the inner tube and has a distal end that penetrates from an inside of the inner tube to an outside of the inner tube. A first gas hole for supplying the precursor gas to the inside of the inner tube and a second gas hole for supplying the precursor gas to the outside of the inner tube are formed on the gas nozzle.

Abstract: A method of forming a blocking silicon oxide film on a target surface on which a silicon oxide film and a silicon nitride film are exposed, includes: placing a workpiece having the target surface on which the silicon oxide film and the silicon nitride film are exposed in a processing container under a depressurized atmosphere; forming a spacer polysilicon film to be a sacrificial film on the target surface on which the silicon oxide film and the silicon nitride film are exposed; and substituting the spacer polysilicon film with a substitution silicon oxide film by supplying thermal energy, oxygen radicals and hydrogen radicals onto the workpiece.

Abstract: There is provided a method of forming a predetermined film by alternately supplying a film-forming raw material gas and a reaction gas onto a workpiece by an atomic layer deposition (ALD), the method including: beginning an ALD-based film formation at a first temperature at which an adsorption of the film-forming raw material gas occurs; continuing the ALD-based film formation while increasing the first temperature; and completing the ALD-based film formation at a second temperature at which a decomposition of the film-forming raw material gas occurs.

Abstract: There is provided a method of forming a silicon oxide film on a target surface on which a silicon oxide film and a silicon nitride film are exposed. The method comprises placing a workpiece having the target surface on which the silicon oxide film and the silicon nitride film are exposed, in a processing container under a depressurized atmosphere; forming a spacer silicon nitride film to be a sacrificial film on the target surface on which the silicon oxide film and the silicon nitride film are exposed; and substituting the spacer silicon nitride film with a substitution silicon oxide film by supplying thermal energy, oxygen radicals and hydrogen radicals onto the workpiece.

Abstract: There is provided a method of forming a predetermined film by alternately supplying a film-forming raw material gas and a reaction gas onto a workpiece by an atomic layer deposition (ALD), the method including: beginning an ALD-based film formation at a first temperature at which an adsorption of the film-forming raw material gas occurs; continuing the ALD-based film formation while increasing the first temperature; and completing the ALD-based film formation at a second temperature at which a decomposition of the film-forming raw material gas occurs.

Abstract: There is provided a vertical heat treatment apparatus for forming a film by supplying a precursor gas to a plurality of substrates that are held in a substantially horizontal posture on a substrate holder with a predetermined interval in a vertical direction. The apparatus includes a processing container including an inner tube accommodating the substrate holder and an outer tube that is disposed outside the inner tube; and a gas nozzle that extends vertically along an inner peripheral surface of the inner tube and has a distal end that penetrates from an inside of the inner tube to an outside of the inner tube. A first gas hole for supplying the precursor gas to the inside of the inner tube and a second gas hole for supplying the precursor gas to the outside of the inner tube are formed on the gas nozzle.

Abstract: There is provided a method of forming a blocking silicon oxide film on a target surface on which a silicon oxide film and a silicon nitride film are exposed, including: placing a workpiece having the target surface on which the silicon oxide film and the silicon nitride film are exposed in a processing container under a depressurized atmosphere; forming a spacer polysilicon film to be a sacrificial film on the target surface on which the silicon oxide film and the silicon nitride film are exposed; and substituting the spacer polysilicon film with a substitution silicon oxide film by supplying thermal energy, oxygen radicals and hydrogen radicals onto the workpiece.

Abstract: There is provided a method of forming a silicon oxide film on a target surface on which a silicon oxide film and a silicon nitride film are exposed. The method comprises placing a workpiece having the target surface on which the silicon oxide film and the silicon nitride film are exposed, in a processing container under a depressurized atmosphere; forming a spacer silicon nitride film to be a sacrificial film on the target surface on which the silicon oxide film and the silicon nitride film are exposed; and substituting the spacer silicon nitride film with a substitution silicon oxide film by supplying thermal energy, oxygen radicals and hydrogen radicals onto the workpiece.

Abstract: A gas injector is installed in a vertical heat treatment apparatus which performs a heat treatment on substrates held by a substrate holder and is loaded into a vertical reaction container around which a heating part is disposed. The gas injector supplies a film forming gas to the substrates into the reaction container. The gas injector includes: a tubular injector main body disposed inside the reaction container so as to extend in a vertical direction and has gas supply holes formed therein along the vertical direction; and a tubular gas introduction pipe installed to be integrated with the tubular injector main body in the vertical direction and includes a gas inlet to which the film forming gas is inputted and a gas introduction port which communicates with an internal space of the tubular injector main body and through which the film forming gas is introduced into the internal space.

Abstract: Provided is a method of controlling a gas supply apparatus including a vaporizer, a carrier gas supply source and a gas supply line, the method including: supplying a liquid or sold raw material to a raw material container included in a vaporizer; vaporizing the liquid or sold raw material in the raw material container to produce a raw material gas; exhausting an interior of the raw material container having the liquid or sold raw material; supplying a carrier gas from the carrier gas supply source to the raw material container; and flowing the raw material gas and the carrier gas from the raw material container to a processing chamber in which a substrate to be processed is accommodated via the gas supply line.

Abstract: A sealed contact device capable of maintaining a function for drawing a generated arc to disappear rapidly and reliably for a long period. An electromagnetic relay includes a housing, a stationary contact and a moving contact which are disposed opposite to each other in the housing, and a pair of permanent magnets and disposed opposite to the stationary contact and the moving contact. An arc generated between the stationary contact and the moving contact is drawn due to a current conducting between the stationary contact and the moving contact and magnetic forces of the permanent magnets. An arc shield member is disposed in a position in which an arc in the housing is induced.

Abstract: A film forming apparatus, which forms a thin film formed of a metal oxide on a substrate by alternately supplying a raw material gas formed of an organic material containing a metal and an oxidation gas for oxidizing the organic material to the substrate a plurality of times, within a reaction vessel under a vacuum atmosphere, is provided. A control part outputs a control signal for comparing a moisture concentration detected by a moisture detection part with a set value after initiation of a step of supplying the oxidation gas and before starting a step of supplying the raw material gas, and when the moisture concentration exceeds a set value, for increasing a substitution operation of an atmosphere substitution step.

Abstract: A sealed contact device having a small number of components and high productivity. In the sealed contact device a ring-shaped flange portion extending laterally from a lower opening edge part of a metallic case is welded and integrated with an upper surface of a plate-shaped yoke to form an internal space and a stationary contact and a moving contact are opposed to each other in the internal space so as to enable approach/separation. A ring-shaped projection provided along a lower surface of the ring-shaped flange portion is integrated with the upper surface of the plate-shaped yoke by resistance welding.

Abstract: A film forming apparatus, which forms a thin film formed of a metal oxide on a substrate by alternately supplying a raw material gas formed of an organic material containing a metal and an oxidation gas for oxidizing the organic material to the substrate a plurality of times, within a reaction vessel under a vacuum atmosphere, is provided. A control part outputs a control signal for comparing a moisture concentration detected by a moisture detection part with a set value after initiation of a step of supplying the oxidation gas and before starting a step of supplying the raw material gas, and when the moisture concentration exceeds a set value, for increasing a substitution operation of an atmosphere substitution step.

Abstract: A sealed contact device capable of maintaining a function for drawing a generated arc to disappear rapidly and reliably for a long period. An electromagnetic relay includes a housing, a stationary contact and a moving contact which are disposed opposite to each other in the housing, and a pair of permanent magnets and disposed opposite to the stationary contact and the moving contact. An arc generated between the stationary contact and the moving contact is drawn due to a current conducting between the stationary contact and the moving contact and magnetic forces of the permanent magnets. An arc shield member is disposed in a position in which an arc in the housing is induced.

Abstract: A sealed contact device having a small number of components and high productivity. In the sealed contact device a ring-shaped flange portion extending laterally from a lower opening edge part of a metallic case is welded and integrated with an upper surface of a plate-shaped yoke to form an internal space and a stationary contact and a moving contact are opposed to each other in the internal space so as to enable approach/separation. A ring-shaped projection provided along a lower surface of the ring-shaped flange portion is integrated with the upper surface of the plate-shaped yoke by resistance welding.

Abstract: The present disclosure provides a heat treatment method, in which a substrate supporter supporting a plurality of substrates in the configuration of a shelf thereon is loaded in a vertical reaction tube surrounded by a heating mechanism and a heat treatment is performed. The method includes discharging a processing gas from a gas nozzle provided in the reaction tube to extend in a vertical direction of the substrate supporter, and supplying a temperature adjusting fluid into a flow path forming member provided to surround the gas nozzle in the reaction tube and adjusting a temperature of the processing gas in the gas nozzle.

Abstract: A method of forming a titanium carbonitride film is provided. In one embodiment, the method of forming the titanium carbonitride film includes performing a cycle a plurality of times to form a titanium carbonitride film. Each cycle performed a plurality of times includes supplying a raw material gas of titanium into a process chamber in which a process object is accommodated, and simultaneously supplying a first gas containing carbon and hydrogen and a second gas containing nitrogen into the process chamber.

Abstract: A gas supply apparatus including a raw material gas supply system supplying a raw material gas inside a raw material storage tank into the processing container by the carrier gas, the gas supply apparatus includes: a carrier gas passage introducing the carrier gas into the raw material storage tank, a raw material gas passage connecting the raw material storage tank and the processing container to supply the carrier gas and the raw material gas; a pressure control gas passage being connected to the raw material gas passage to supply the pressure control gas; and a valve control unit controlling an opening/closing valve to perform for starting a supply of the pressure control gas into the processing container and simultaneously starting supply of the raw material gas into the processing container from the raw material storage tank, and stopping the supply of the pressure control gas.

Abstract: A vertical heat treatment apparatus is configured that a substrate supporter supporting a plurality of substrates in the configuration of a shelf thereon is loaded in a vertical reaction tube surrounded by a heating mechanism and a heat treatment is performed. The vertical heat treatment apparatus includes: a gas nozzle provided in the reaction tube to extend in a vertical direction of the substrate supporter and configured to discharge a processing gas; and a flow path forming member provided to surround the gas nozzle in the reaction tube, wherein the flow path forming member defines a fluid flowing space of a temperature adjusting fluid for adjusting a temperature of the processing gas in the gas nozzle and includes a supply hole and an exhaust hole to supply the temperature adjusting fluid.