Abstract: A ceramic substrate capable of suppressing the reduced reliability caused by via misalignment during manufacturing, and capable of suppressing the reduced reliability caused by thermal stress between the ceramic substrate and a mounting board is provided. The ceramic substrate includes an electrode and a via connected to the electrode. The ceramic substrate includes a plurality of vias provided to a center portion in a first direction of the electrode along a second direction. The first direction is parallel to a surface on which the electrode is disposed. The first direction is a direction connecting a center of the surface to a center of the electrode. The second direction is parallel to the surface and perpendicular to the first direction.

Abstract: An object of the present invention is to provide a power semiconductor device enabling maintenance in reliability and improvement in productivity. According to the present invention, provided are: a circuit body including a semiconductor element and a conductive portion; a first insulation and a second insulation opposed to each other, the circuit body being interposed between the first insulation and the second insulation; a first base and a second base opposed to each other, the circuit body, the first insulation, and the second insulation being interposed between the first base and the second base; a case having a first opening portion covered with the first base and a second opening portion covered with the second base; and a distance regulation portion provided in space between the first base and the second base, the distance regulation portion regulating a distance between the first base and the second base in contact with the first base and the second base.

Abstract: The objective of the present invention is to provide a technique that ensures conduction between a gate terminal of a semiconductor switching element and a wiring layer in a semiconductor device formed with a wiring layer inside a ceramic layer. This semiconductor device comprises: a wiring layer that is inside a ceramic layer formed above an insulation layer; and a metal layer for connecting terminals from the semiconductor switching element other than the gate terminal. The wiring layer and the gate terminal from the semiconductor switching element are connected electrically via a connection part formed from a conductive material. The connection part protrudes more than the metal layer toward the semiconductor switching element.

Abstract: An object of the present invention is to provide a power module having high reliability. The power module according to the present invention, includes a circuit body and a case housing the circuit body. The case has a first case member including a first base plate and a second case member including a second base plate. The first case member has a first side wall portion formed in an arrangement direction of the first base plate and the second base plate. The second case member has a second side wall portion formed in the arrangement direction, the second side wall portion coupling to the first side wall portion. The first side wall portion and the second side wall portion are formed so as to have the sum of lengths of the first side wall portion and the second side wall portion in the arrangement direction smaller than the thickness of the circuit body. The first case member has a deforming portion smaller than the first base plate and the second base plate in rigidity.

Abstract: An object of the present invention is to provide a power module having high reliability. The power module according to the present invention, includes a circuit body and a case housing the circuit body. The case has a first case member including a first base plate and a second case member including a second base plate. The first case member has a first side wall portion formed in an arrangement direction of the first base plate and the second base plate. The second case member has a second side wall portion formed in the arrangement direction, the second side wall portion coupling to the first side wall portion. The first side wall portion and the second side wall portion are formed so as to have the sum of lengths of the first side wall portion and the second side wall portion in the arrangement direction smaller than the thickness of the circuit body. The first case member has a deforming portion smaller than the first base plate and the second base plate in rigidity.

Abstract: A lithium ion secondary battery includes a positive electrode capable of occluding and discharging lithium ions, a negative electrode capable of occluding and discharging the lithium ions, and a nonaqueous electrolyte including a lithium salt, and being reversively charged/discharged. The positive electrode includes a metal plate, a metal film formed on a surface of the metal plate, and a positive electrode active material layer, the metal film includes one or more metals selected from the group consisting of ruthenium, osmium, palladium, and platinum having a orientation, the positive electrode active material layer is a compound expressed by the following expression: LiCoxNi1-xO2, (where 0?x?1) and is epitaxially grown and formed on a surface of the metal film, and the positive electrode active material is formed such that a c axis of a crystal structure of the positive electrode active material is perpendicular to the metal film.

Abstract: A load cell including sensor chip (1) on which plural resistive elements rectangular in a plan view are formed, and a member (2) is provided on a front surface side of a semiconductor substrate made of silicon single crystal. The member (2) includes a load portion (3), a fixed pedestal portion (4), and a strain generation portion (5) that is spaced apart from the load portion (3) and the fixed pedestal portion (4), and arranged between the load portion (3) and the fixed pedestal portion (4). The sensor chip (1) is attached onto a front side surface (2a) of the strain generation portion (5) of the member (2) so that a <100> direction of the silicon single crystal in the semiconductor substrate is parallel to a load direction, and a longitudinal direction of the plural resistive elements has an angle of 45° with respect to a load direction.

Abstract: A lithium ion secondary battery includes a positive electrode capable of occluding and discharging lithium ions, a negative electrode capable of occluding and discharging the lithium ions, and a nonaqueous electrolyte including a lithium salt, and being reversively charged/discharged. The positive electrode includes a metal plate, a metal film formed on a surface of the metal plate, and a positive electrode active material layer, the metal film includes one or more metals selected from the group consisting of ruthenium, osmium, palladium, and platinum having a orientation, the positive electrode active material layer is a compound expressed by the following expression: LiCoxNi1-xO2, (where 0?x?1) and is epitaxially grown and formed on a surface of the metal film, and the positive electrode active material is formed such that a c axis of a crystal structure of the positive electrode active material is perpendicular to the metal film.

Abstract: A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a <100> direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a <110> direction.

Abstract: A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a <100> direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a <110> direction.

Abstract: A strain measuring device includes a bridge circuit comprising a p-type impurity diffused resistor as a strain detecting portion and a bridge circuit comprising an n-type impurity diffused resistor as a strain detecting portion in a semiconductor single crystalline substrate, Sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, the impurity diffused resistor is configured to be a meander shape including strip lines and connecting portions.

Abstract: A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a <100> direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a <110> direction.

Abstract: A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a <100> direction of the semiconductor monocrystal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a <110> direction.

Abstract: A strain measuring device includes a bridge circuit comprising a p-type impurity diffused resistor as a strain detecting portion and a bridge circuit comprising an n-type impurity diffused resistor as a strain detecting portion in a semiconductor single crystalline substrate, Sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, the impurity diffused resistor is configured to be a meander shape including strip lines and connecting portions.

Abstract: A strain measuring device according to the present invention includes a bridged circuit comprising a p-type impurity diffused resistor as a strain detective portion and a bridged circuit comprising an n-type impurity diffused resistor as a strain detective portion in a semiconductor single crystalline substrate, and sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, it is preferable that the impurity diffused resistor be configured to be a meander shape comprising strip lines and connecting portions. Moreover, it is preferable that the number of strip lines in the p-type impurity diffused resistor be smaller than that in the n-type impurity diffused resistor.

Abstract: In a solidification sensor for measuring a solidification state of a liquid with a high degree of accuracy in real time, and for making the sensor small-sized with a reduced power consumption, the solidification sensor comprises a liquid absorbing portion formed of a liquid absorbable material, a substrate coupled to the liquid absorbing portion and a strain sensor for measuring strain exerted to the substrate due to a volumetric change upon solidification of a liquid absorbed in the liquid absorbing portion.

Abstract: The invention provides a load sensor which is driven by a low electric power consumption, can measure at a high precision, and has a high reliability without being broken. The load sensor is structured such that a detection rod for detecting a strain is provided in an inner portion of a hole formed near a center of a pin via a shock relaxation material and a semiconductor strain sensor is provided in the detection rod, in a load sensor detecting a load applied to the pin from a strain generated in an inner portion of the pin.

Abstract: A monitoring system for valve device according to the present invention comprises a semiconductor single crystalline substrate including a bridged circuit and the bridged circuit comprising impurity-diffused resistors. The semiconductor single crystalline substrate is mounted to any of a valve device's valve stem, valve yoke, drive shaft, or elastic body disposed at the end of the drive shaft. Thrust and torque of the valve device are measured by the semiconductor single crystalline substrate and then the measured values are used for monitoring the valve device.

Abstract: It is an object to prevent breakage of a mechanical quantity measuring apparatus made of a monocrystalline silicon substrate due to a large distortion. A mounting board for measuring distortion is provided on a rear surface of a sensor chip made of a semiconductor monocrystalline substrate having a distortion detecting unit. Even when a large distortion occurs in an object to be measured, a distortion occurring in the semiconductor monocrystalline substrate can be controlled by the mounting board. Therefore, the semiconductor monocrystalline substrate is not broken, and a highly reliable mechanical quantity measuring apparatus can be provided.

Abstract: The invention provides a load sensor which is driven by a low electric power consumption, can measure at a high precision, and has a high reliability without being broken. The load sensor is structured such that a detection rod for detecting a strain is provided in an inner portion of a hole formed near a center of a pin via a shock relaxation material and a semiconductor strain sensor is provided in the detection rod, in a load sensor detecting a load applied to the pin from a strain generated in an inner portion of the pin.