Patents by Inventor Hiromi Shimazu

Hiromi Shimazu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200296828
    Abstract: A ceramic substrate capable of suppressing the reduced reliability caused by via misalignment during manufacturing, and capable of suppressing the reduced reliability caused by thermal stress between the ceramic substrate and a mounting board is provided. The ceramic substrate includes an electrode and a via connected to the electrode. The ceramic substrate includes a plurality of vias provided to a center portion in a first direction of the electrode along a second direction. The first direction is parallel to a surface on which the electrode is disposed. The first direction is a direction connecting a center of the surface to a center of the electrode. The second direction is parallel to the surface and perpendicular to the first direction.
    Type: Application
    Filed: January 16, 2020
    Publication date: September 17, 2020
    Applicant: HITACHI METALS, LTD.
    Inventors: Hisashi TANIE, Kenji HAYASHI, Hiromi SHIMAZU
  • Publication number: 20200227333
    Abstract: An object of the present invention is to provide a power semiconductor device enabling maintenance in reliability and improvement in productivity. According to the present invention, provided are: a circuit body including a semiconductor element and a conductive portion; a first insulation and a second insulation opposed to each other, the circuit body being interposed between the first insulation and the second insulation; a first base and a second base opposed to each other, the circuit body, the first insulation, and the second insulation being interposed between the first base and the second base; a case having a first opening portion covered with the first base and a second opening portion covered with the second base; and a distance regulation portion provided in space between the first base and the second base, the distance regulation portion regulating a distance between the first base and the second base in contact with the first base and the second base.
    Type: Application
    Filed: May 22, 2018
    Publication date: July 16, 2020
    Inventors: Nobutake TSUYUNO, Hiromi SHIMAZU, Akihiro NAMBA, Akira MATSUSHITA, Hiroshi HOUZOUJI, Atsuo NISHIHARA, Toshiaki ISHII, Takashi HIRAO
  • Publication number: 20200203241
    Abstract: The objective of the present invention is to provide a technique that ensures conduction between a gate terminal of a semiconductor switching element and a wiring layer in a semiconductor device formed with a wiring layer inside a ceramic layer. This semiconductor device comprises: a wiring layer that is inside a ceramic layer formed above an insulation layer; and a metal layer for connecting terminals from the semiconductor switching element other than the gate terminal. The wiring layer and the gate terminal from the semiconductor switching element are connected electrically via a connection part formed from a conductive material. The connection part protrudes more than the metal layer toward the semiconductor switching element.
    Type: Application
    Filed: July 2, 2018
    Publication date: June 25, 2020
    Applicant: HITACHI METALS, LTD.
    Inventors: Hisashi TANIE, Hiromi SHIMAZU, Hiroyuki ITO
  • Patent number: 9912248
    Abstract: An object of the present invention is to provide a power module having high reliability. The power module according to the present invention, includes a circuit body and a case housing the circuit body. The case has a first case member including a first base plate and a second case member including a second base plate. The first case member has a first side wall portion formed in an arrangement direction of the first base plate and the second base plate. The second case member has a second side wall portion formed in the arrangement direction, the second side wall portion coupling to the first side wall portion. The first side wall portion and the second side wall portion are formed so as to have the sum of lengths of the first side wall portion and the second side wall portion in the arrangement direction smaller than the thickness of the circuit body. The first case member has a deforming portion smaller than the first base plate and the second base plate in rigidity.
    Type: Grant
    Filed: July 1, 2015
    Date of Patent: March 6, 2018
    Assignee: Hitachi Automotive Systems, Ltd.
    Inventors: Hiromi Shimazu, Kinya Nakatsu, Kouji Sasaki, Takahiro Shimura, Hisashi Tanie
  • Publication number: 20170187300
    Abstract: An object of the present invention is to provide a power module having high reliability. The power module according to the present invention, includes a circuit body and a case housing the circuit body. The case has a first case member including a first base plate and a second case member including a second base plate. The first case member has a first side wall portion formed in an arrangement direction of the first base plate and the second base plate. The second case member has a second side wall portion formed in the arrangement direction, the second side wall portion coupling to the first side wall portion. The first side wall portion and the second side wall portion are formed so as to have the sum of lengths of the first side wall portion and the second side wall portion in the arrangement direction smaller than the thickness of the circuit body. The first case member has a deforming portion smaller than the first base plate and the second base plate in rigidity.
    Type: Application
    Filed: July 1, 2015
    Publication date: June 29, 2017
    Applicant: Hitachi Automotive Systems, Ltd.
    Inventors: Hiromi SHIMAZU, Kinya NAKATSU, Kouji SASAKI, Takahiro SHIMURA, Hisashi TANIE
  • Patent number: 9634316
    Abstract: A lithium ion secondary battery includes a positive electrode capable of occluding and discharging lithium ions, a negative electrode capable of occluding and discharging the lithium ions, and a nonaqueous electrolyte including a lithium salt, and being reversively charged/discharged. The positive electrode includes a metal plate, a metal film formed on a surface of the metal plate, and a positive electrode active material layer, the metal film includes one or more metals selected from the group consisting of ruthenium, osmium, palladium, and platinum having a orientation, the positive electrode active material layer is a compound expressed by the following expression: LiCoxNi1-xO2, (where 0?x?1) and is epitaxially grown and formed on a surface of the metal film, and the positive electrode active material is formed such that a c axis of a crystal structure of the positive electrode active material is perpendicular to the metal film.
    Type: Grant
    Filed: October 31, 2011
    Date of Patent: April 25, 2017
    Assignee: HITACHI, LTD.
    Inventors: Hiromi Shimazu, Tomio Iwasaki
  • Publication number: 20150276517
    Abstract: A load cell including sensor chip (1) on which plural resistive elements rectangular in a plan view are formed, and a member (2) is provided on a front surface side of a semiconductor substrate made of silicon single crystal. The member (2) includes a load portion (3), a fixed pedestal portion (4), and a strain generation portion (5) that is spaced apart from the load portion (3) and the fixed pedestal portion (4), and arranged between the load portion (3) and the fixed pedestal portion (4). The sensor chip (1) is attached onto a front side surface (2a) of the strain generation portion (5) of the member (2) so that a <100> direction of the silicon single crystal in the semiconductor substrate is parallel to a load direction, and a longitudinal direction of the plural resistive elements has an angle of 45° with respect to a load direction.
    Type: Application
    Filed: May 25, 2012
    Publication date: October 1, 2015
    Applicant: Hitachi, Ltd.
    Inventors: Kisho Ashida, Hiroyuki Ohta, Hiromi Shimazu, Kenichi Kasai
  • Publication number: 20140315090
    Abstract: A lithium ion secondary battery includes a positive electrode capable of occluding and discharging lithium ions, a negative electrode capable of occluding and discharging the lithium ions, and a nonaqueous electrolyte including a lithium salt, and being reversively charged/discharged. The positive electrode includes a metal plate, a metal film formed on a surface of the metal plate, and a positive electrode active material layer, the metal film includes one or more metals selected from the group consisting of ruthenium, osmium, palladium, and platinum having a orientation, the positive electrode active material layer is a compound expressed by the following expression: LiCoxNi1-xO2, (where 0?x?1) and is epitaxially grown and formed on a surface of the metal film, and the positive electrode active material is formed such that a c axis of a crystal structure of the positive electrode active material is perpendicular to the metal film.
    Type: Application
    Filed: October 31, 2011
    Publication date: October 23, 2014
    Applicant: HITACHI, LTD.
    Inventors: Hiromi Shimazu, Tomio Iwasaki
  • Patent number: 8695433
    Abstract: A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a <100> direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a <110> direction.
    Type: Grant
    Filed: January 4, 2013
    Date of Patent: April 15, 2014
    Assignee: Hitachi, Ltd.
    Inventors: Hiromi Shimazu, Hiroyuki Ohta, Yohei Tanno
  • Patent number: 8365609
    Abstract: A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a <100> direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a <110> direction.
    Type: Grant
    Filed: July 6, 2011
    Date of Patent: February 5, 2013
    Assignee: Hitachi, Ltd.
    Inventors: Hiromi Shimazu, Hiroyuki Ohta, Yohei Tanno
  • Patent number: 8186228
    Abstract: A strain measuring device includes a bridge circuit comprising a p-type impurity diffused resistor as a strain detecting portion and a bridge circuit comprising an n-type impurity diffused resistor as a strain detecting portion in a semiconductor single crystalline substrate, Sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, the impurity diffused resistor is configured to be a meander shape including strip lines and connecting portions.
    Type: Grant
    Filed: February 10, 2011
    Date of Patent: May 29, 2012
    Assignee: Hitachi, Ltd.
    Inventors: Hiroyuki Ohta, Hiromi Shimazu, Yohei Tanno
  • Publication number: 20110259112
    Abstract: A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a <100> direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a <110> direction.
    Type: Application
    Filed: July 6, 2011
    Publication date: October 27, 2011
    Applicant: Hitachi Ltd.
    Inventors: Hiromi Shimazu, Hiroyuki Ohta, Yohei Tanno
  • Patent number: 7992448
    Abstract: A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a <100> direction of the semiconductor monocrystal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a <110> direction.
    Type: Grant
    Filed: February 20, 2007
    Date of Patent: August 9, 2011
    Assignee: Hitachi, Ltd.
    Inventors: Hiromi Shimazu, Hiroyuki Ohta, Yohei Tanno
  • Publication number: 20110128113
    Abstract: A strain measuring device includes a bridge circuit comprising a p-type impurity diffused resistor as a strain detecting portion and a bridge circuit comprising an n-type impurity diffused resistor as a strain detecting portion in a semiconductor single crystalline substrate, Sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, the impurity diffused resistor is configured to be a meander shape including strip lines and connecting portions.
    Type: Application
    Filed: February 10, 2011
    Publication date: June 2, 2011
    Inventors: Hiroyuki OHTA, Hiromi Shimazu, Yohei Tanno
  • Patent number: 7893810
    Abstract: A strain measuring device according to the present invention includes a bridged circuit comprising a p-type impurity diffused resistor as a strain detective portion and a bridged circuit comprising an n-type impurity diffused resistor as a strain detective portion in a semiconductor single crystalline substrate, and sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, it is preferable that the impurity diffused resistor be configured to be a meander shape comprising strip lines and connecting portions. Moreover, it is preferable that the number of strip lines in the p-type impurity diffused resistor be smaller than that in the n-type impurity diffused resistor.
    Type: Grant
    Filed: August 24, 2007
    Date of Patent: February 22, 2011
    Assignee: Hitachi, Ltd.
    Inventors: Hiroyuki Ohta, Hiromi Shimazu, Yohei Tanno
  • Patent number: 7836755
    Abstract: In a solidification sensor for measuring a solidification state of a liquid with a high degree of accuracy in real time, and for making the sensor small-sized with a reduced power consumption, the solidification sensor comprises a liquid absorbing portion formed of a liquid absorbable material, a substrate coupled to the liquid absorbing portion and a strain sensor for measuring strain exerted to the substrate due to a volumetric change upon solidification of a liquid absorbed in the liquid absorbing portion.
    Type: Grant
    Filed: November 21, 2007
    Date of Patent: November 23, 2010
    Assignee: Hitachi, Ltd.
    Inventors: Hiromi Shimazu, Hiroyuki Ohta, Yohei Tanno, Mari Uchida, Naoto Saito
  • Patent number: 7793551
    Abstract: The invention provides a load sensor which is driven by a low electric power consumption, can measure at a high precision, and has a high reliability without being broken. The load sensor is structured such that a detection rod for detecting a strain is provided in an inner portion of a hole formed near a center of a pin via a shock relaxation material and a semiconductor strain sensor is provided in the detection rod, in a load sensor detecting a load applied to the pin from a strain generated in an inner portion of the pin.
    Type: Grant
    Filed: August 1, 2008
    Date of Patent: September 14, 2010
    Assignee: Hitachi Construction Machinery Co., Ltd.
    Inventors: Hiromi Shimazu, Yohei Tanno, Hiroyuki Ohta, Ryuji Takada, Takayuki Shimodaira
  • Patent number: 7584668
    Abstract: A monitoring system for valve device according to the present invention comprises a semiconductor single crystalline substrate including a bridged circuit and the bridged circuit comprising impurity-diffused resistors. The semiconductor single crystalline substrate is mounted to any of a valve device's valve stem, valve yoke, drive shaft, or elastic body disposed at the end of the drive shaft. Thrust and torque of the valve device are measured by the semiconductor single crystalline substrate and then the measured values are used for monitoring the valve device.
    Type: Grant
    Filed: August 7, 2007
    Date of Patent: September 8, 2009
    Assignee: Hitachi, Ltd.
    Inventors: Hiroyuki Ohta, Hiromi Shimazu, Yohei Tanno, Yoshihisa Kiyotoki, Kenji Onodera, Kenji Araki
  • Publication number: 20090199650
    Abstract: It is an object to prevent breakage of a mechanical quantity measuring apparatus made of a monocrystalline silicon substrate due to a large distortion. A mounting board for measuring distortion is provided on a rear surface of a sensor chip made of a semiconductor monocrystalline substrate having a distortion detecting unit. Even when a large distortion occurs in an object to be measured, a distortion occurring in the semiconductor monocrystalline substrate can be controlled by the mounting board. Therefore, the semiconductor monocrystalline substrate is not broken, and a highly reliable mechanical quantity measuring apparatus can be provided.
    Type: Application
    Filed: April 23, 2009
    Publication date: August 13, 2009
    Applicant: Hitachi, Ltd.
    Inventors: Hiromi Shimazu, Hiroyuki Ohta
  • Publication number: 20090031819
    Abstract: The invention provides a load sensor which is driven by a low electric power consumption, can measure at a high precision, and has a high reliability without being broken. The load sensor is structured such that a detection rod for detecting a strain is provided in an inner portion of a hole formed near a center of a pin via a shock relaxation material and a semiconductor strain sensor is provided in the detection rod, in a load sensor detecting a load applied to the pin from a strain generated in an inner portion of the pin.
    Type: Application
    Filed: August 1, 2008
    Publication date: February 5, 2009
    Inventors: Hiromi Shimazu, Yohei Tanno, Hiroyuki Ohta, Ryuji Takada, Takayuki Shimodaira