Abstract: A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a <100> direction of the semiconductor monocrystal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a <110> direction.

Abstract: A strain measuring device includes a bridge circuit comprising a p-type impurity diffused resistor as a strain detecting portion and a bridge circuit comprising an n-type impurity diffused resistor as a strain detecting portion in a semiconductor single crystalline substrate, Sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, the impurity diffused resistor is configured to be a meander shape including strip lines and connecting portions.

Abstract: A strain measuring device according to the present invention includes a bridged circuit comprising a p-type impurity diffused resistor as a strain detective portion and a bridged circuit comprising an n-type impurity diffused resistor as a strain detective portion in a semiconductor single crystalline substrate, and sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, it is preferable that the impurity diffused resistor be configured to be a meander shape comprising strip lines and connecting portions. Moreover, it is preferable that the number of strip lines in the p-type impurity diffused resistor be smaller than that in the n-type impurity diffused resistor.

Abstract: In a solidification sensor for measuring a solidification state of a liquid with a high degree of accuracy in real time, and for making the sensor small-sized with a reduced power consumption, the solidification sensor comprises a liquid absorbing portion formed of a liquid absorbable material, a substrate coupled to the liquid absorbing portion and a strain sensor for measuring strain exerted to the substrate due to a volumetric change upon solidification of a liquid absorbed in the liquid absorbing portion.

Abstract: The invention provides a load sensor which is driven by a low electric power consumption, can measure at a high precision, and has a high reliability without being broken. The load sensor is structured such that a detection rod for detecting a strain is provided in an inner portion of a hole formed near a center of a pin via a shock relaxation material and a semiconductor strain sensor is provided in the detection rod, in a load sensor detecting a load applied to the pin from a strain generated in an inner portion of the pin.

Abstract: A monitoring system for valve device according to the present invention comprises a semiconductor single crystalline substrate including a bridged circuit and the bridged circuit comprising impurity-diffused resistors. The semiconductor single crystalline substrate is mounted to any of a valve device's valve stem, valve yoke, drive shaft, or elastic body disposed at the end of the drive shaft. Thrust and torque of the valve device are measured by the semiconductor single crystalline substrate and then the measured values are used for monitoring the valve device.

Abstract: It is an object to prevent breakage of a mechanical quantity measuring apparatus made of a monocrystalline silicon substrate due to a large distortion. A mounting board for measuring distortion is provided on a rear surface of a sensor chip made of a semiconductor monocrystalline substrate having a distortion detecting unit. Even when a large distortion occurs in an object to be measured, a distortion occurring in the semiconductor monocrystalline substrate can be controlled by the mounting board. Therefore, the semiconductor monocrystalline substrate is not broken, and a highly reliable mechanical quantity measuring apparatus can be provided.

Abstract: The invention provides a load sensor which is driven by a low electric power consumption, can measure at a high precision, and has a high reliability without being broken. The load sensor is structured such that a detection rod for detecting a strain is provided in an inner portion of a hole formed near a center of a pin via a shock relaxation material and a semiconductor strain sensor is provided in the detection rod, in a load sensor detecting a load applied to the pin from a strain generated in an inner portion of the pin.

Abstract: A reliable semiconductor device having a multilayer wiring structure formed of copper as a main component material, which constrains occurrence of voids caused by stress migration. In the multilayer wiring structure, a first insulation layer having a high barrier property and a compression stress, and making contact with the upper surface of a first wiring made of copper as a main component material, a second insulation film having a tensile stress, and a third insulation film having a dielectric constant which is lower than those of the first and second insulation film, are laminated one upon another in the mentioned order as viewed the bottom thereof, and a via hole is formed piercing through the first insulation film, the second insulation film and the third insulation film, making contact with the first wiring.

Abstract: In a solidification sensor for measuring a solidification state of a liquid with a high degree of accuracy in real time, and for making the sensor small-sized with a reduced power consumption, the solidification sensor comprises a liquid absorbing portion formed of a liquid absorbable material, a substrate coupled to the liquid absorbing portion and a strain sensor for measuring strain exerted to the substrate due to a volumetric change upon solidification of a liquid absorbed in the liquid absorbing portion.

Abstract: A strain measuring device according to the present invention includes a bridged circuit comprising a p-type impurity diffused resistor as a strain detective portion and a bridged circuit comprising an n-type impurity diffused resistor as a strain detective portion in a semiconductor single crystalline substrate, and sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, it is preferable that the impurity diffused resistor be configured to be a meander shape comprising strip lines and connecting portions. Moreover, it is preferable that the number of strip lines in the p-type impurity diffused resistor be smaller than that in the n-type impurity diffused resistor.

Abstract: A monitoring system for valve device according to the present invention comprises a semiconductor single crystalline substrate including a bridged circuit and the bridged circuit comprising impurity-diffused resistors. The semiconductor single crystalline substrate is mounted to any of a valve device's valve stem, valve yoke, drive shaft, or elastic body disposed at the end of the drive shaft. Thrust and torque of the valve device are measured by the semiconductor single crystalline substrate and then the measured values are used for monitoring the valve device.

Abstract: It is an object to prevent breakage of a mechanical quantity measuring apparatus made of a monocrystalline silicon substrate due to a large distortion. A mounting board for measuring distortion is provided on a rear surface of a sensor chip made of a semiconductor monocrystalline substrate having a distortion detecting unit. Even when a large distortion occurs in an object to be measured, a distortion occurring in the semiconductor monocrystalline substrate can be controlled by the mounting board. Therefore, the semiconductor monocrystalline substrate is not broken, and a highly reliable mechanical quantity measuring apparatus can be provided.

Abstract: A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a <100> direction of the semiconductor monocrystal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a <110> direction.

Abstract: A reliable semiconductor device having a multilayer wiring structure formed of copper as a main component material, which constrains occurrence of voids caused by stress migration. In the multilayer wiring structure, a first insulation layer having a high barrier property and a compression stress, and making contact with the upper surface of a first wiring made of copper as a main component material, a second insulation film having a tensile stress, and a third insulation film having a dielectric constant which is lower than those of the first and second insulation film, are laminated one upon another in the mentioned order as viewed the bottom thereof, and a via hole is formed piercing thorough the first insulation film, the second insulation film and the third insulation film, making contact with the first wiring.

Abstract: A diffusion layer 3a of a silicon substrate, a polycrystalline silicon material 10, or a gate electrode 12 is connected to a conductive film 8 through a titanium silicide film 6 within a contact hole 5 provided in an insulating film 4. The titanium silicide film 6 is formed by the silicide reaction between a titanium film 7 and the silicon. The upper limit of the thickness of the titanium silicide film 6, and the upper limit of the titanium film 7 are specified by the internal stress within the conductive film 8.

Abstract: In a semiconductor device having a cobalt silicide film, at least nickel or iron is contained in the cobalt silicide film for preventing the rise of resistance incidental to thinning of the film.

Abstract: A semiconductor device has a wiring structure in which an insulating layer, a wiring layer made of Al and containing at least either Au or Ag as an additional element, and a protecting layer are sequentially laminated on a substrate, so that a peel-off does not occur at an interface between the Al film and a substratum insulative material in an Al wiring structure made of Al as a main component material.

Abstract: In a semiconductor device having a cobalt silicide film, at least nickel or iron is contained in the cobalt silicide film for preventing the rise of resistance incidental to thinning of the film.

Abstract: In a semiconductor device having a cobalt silicide film, at least nickel or iron is contained in the cobalt silicide film for preventing the rise of resistance incidental to thinning of the film.