Abstract: A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

Abstract: A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

Abstract: A management server is provided in a computer system having one or more hosts, one or more storage systems and one or more switches, the hosts having a plurality of virtual machines, each virtual machine being defined according to a service level agreement. The management server is operable to manage the virtual machines and resources associated with the virtual machines; receive a notification of an event from a node in the computer system; determine if the event affects a service level agreement for any of the virtual machines defined in the computer system, the service level agreements listing required attributes for the corresponding virtual machines; allocate a new resource for a virtual machine whose service level agreement is affected by the event; and move the virtual machine whose service level agreement is affected by the event to the newly allocated resource.

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

Abstract: A planetary gear mechanism of the invention includes a housing, an input shaft that has an eccentric portion whose center lies on an eccentric axis that is displaced from an axis of input and output shafts, and is supported by the housing to be rotatable about the axis of the input and output shafts relative to the housing, an oscillating face plate that eccentrically oscillates via the eccentric portion, such that its rotation relative to the housing is restricted, and an output shaft to which an internally toothed gear that internally contacts and meshes with an externally toothed gear formed on the oscillating face plate is mounted, and which is rotatable about the axis of the input and output shafts relative to the housing. As the input shaft rotates, a circumferential position at which the externally toothed gear and the internally toothed gear mesh with each other changes, and rotation of the input shaft is delivered at a reduced speed to the output shaft.

Abstract: In a planetary gear device, a first side plate as carrier is formed to a disc plate shape and secures thereto pins to protrude the pins from one end surface in an axial direction. The outside diameter of the first side plate is formed to be a small diameter on one side in the axial direction and a large diameter on the other side in the axial direction. The first side plate is provided with press-fitting hole portions with the pins press-fitted thereinto and small-diameter side concavities that are formed on the press-fitting hole portions on one side in the axial direction, that open to one end surface in the axial direction of the first side plate and that have internal surfaces being out of contact with the pins at at least parts thereof.

Abstract: A management server is provided in a computer system having one or more hosts, one or more storage systems and one or more switches, the hosts having a plurality of virtual machines, each virtual machine being defined according to a service level agreement. The management server is operable to manage the virtual machines and resources associated with the virtual machines; receive a notification of an event from a node in the computer system; determine if the event affects a service level agreement for any of the virtual machines defined in the computer system, the service level agreements listing required attributes for the corresponding virtual machines; allocate a new resource for a virtual machine whose service level agreement is affected by the event; and move the virtual machine whose service level agreement is affected by the event to the newly allocated resource.

Abstract: A speed change gear includes: an internal gear member; an eccentric member; an oscillating member; a pair of first and second rotating members; and a pin that is supported at both ends by insertion holes of the first and second rotating members. The insertion hole and the insertion hole have the same diameter. The outside diameter of the other side end portion of the pin is smaller than the outside diameter of one side end portion of the pin such that the one side end portion is press-fitted in the corresponding insertion hole and the other side end portion is supported by the corresponding insertion hole.

Abstract: In a planetary gear device, a first side plate as carrier is formed to a disc plate shape and secures thereto pins to protrude the pins from one end surface in an axial direction. The outside diameter of the first side plate is formed to be a small diameter on one side in the axial direction and a large diameter on the other side in the axial direction. The first side plate is provided with press-fitting hole portions with the pins press-fitted thereinto and small-diameter side concavities that are formed on the press-fitting hole portions on one side in the axial direction, that open to one end surface in the axial direction of the first side plate and that have internal surfaces being out of contact with the pins at at least parts thereof.

Abstract: A planetary gear mechanism of the invention includes a housing, an input shaft that has an eccentric portion whose center lies on an eccentric axis, and is rotatable about the axis of input and output shafts relative to the housing, an oscillating face plate that eccentrically oscillates relative to the input shaft via the eccentric portion, and rotates about the eccentric axis, and an output shaft that is provided with a second internally toothed gear that internally contacts and meshes with a second externally toothed gear formed on the oscillating face plate, and is rotatable about the axis of the input and output shafts relative to the housing. The housing is formed with a first internally toothed gear that internally contacts and meshes with a first externally toothed gear formed on the oscillating face plate.

Abstract: Exemplary embodiments provide rapid creation and deployment of virtual machines by reducing communication processes between virtual machine user and storage and server administrators. One embodiment is a method for deploying virtual machines of host computers. A storage subsystem provides a pool of pre-created virtual volumes in the storage subsystem prior to deploying the virtual machines, the pre-created virtual volumes having pre-copied images for the virtual machines. The method comprises: selecting one of the pre-created virtual volumes for deploying one of the virtual machines; calculating a volume size for the selected virtual volume based on a specified image size for data and OS image; resizing the selected virtual volume according to the calculated volume size; and requesting one of the host computers to deploy the virtual machine using the resized virtual volume.

Abstract: A planetary gear mechanism of the invention includes a housing, an input shaft that has an eccentric portion whose center lies on an eccentric axis, and is rotatable about the axis of input and output shafts relative to the housing, an oscillating face plate that eccentrically oscillates relative to the input shaft via the eccentric portion, and rotates about the eccentric axis, and an output shaft that is provided with a second internally toothed gear that internally contacts and meshes with a second externally toothed gear formed on the oscillating face plate, and is rotatable about the axis of the input and output shafts relative to the housing. The housing is formed with a first internally toothed gear that internally contacts and meshes with a first externally toothed gear formed on the oscillating face plate.

Abstract: A planetary gear mechanism of the invention includes a housing, an input shaft that has an eccentric portion whose center lies on an eccentric axis that is displaced from an axis of input and output shafts, and is supported by the housing to be rotatable about the axis of the input and output shafts relative to the housing, an oscillating face plate that eccentrically oscillates via the eccentric portion, such that its rotation relative to the housing is restricted, and an output shaft to which an internally toothed gear that internally contacts and meshes with an externally toothed gear formed on the oscillating face plate is mounted, and which is rotatable about the axis of the input and output shafts relative to the housing. As the input shaft rotates, a circumferential position at which the externally toothed gear and the internally toothed gear mesh with each other changes, and rotation of the input shaft is delivered at a reduced speed to the output shaft.

Abstract: A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.

Abstract: A speed change gear includes: an internal gear member; an eccentric member; an oscillating member; a pair of first and second rotating members; and a pin that is supported at both ends by insertion holes of the first and second rotating members. The insertion hole and the insertion hole have the same diameter. The outside diameter of the other side end portion of the pin is smaller than the outside diameter of one side end portion of the pin such that the one side end portion is press-fitted in the corresponding insertion hole and the other side end portion is supported by the corresponding insertion hole.

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

Abstract: In a three degrees of freedom parallel mechanism, a spindle head is carried by first and second movable support members to be movable along a Z-axis and to be pivotable along each of A and B-axes. The spindle head is jointed through three rods to drive sliders which are movable along three parallel linear guides secured stationarily. For jointing, there are employed spherical joints and universal joints. Kinematic parameters used in converting each command position of the movable body to target operational positions for three actuators of the Z, A and B-axes are compensated based on inversely converted command positions and inversely converted actually measured positions which have been gathered with the spindle head being located at positions of a suitable number, so that the kinematic parameters can be updated to those newest.

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.