Abstract: A parallel mechanism adapted to control at least one of pivotal movement and linear movement of a link head having three degrees of freedom. The parallel mechanism has four actuators for driving the link head, and link groups which have four links connected to the four actuators, respectively, and each of which is connected to the link head. A rotation joint interposed between each of the link groups and the link head is made a linear joint which is connected to the link head so as to be relatively movable in one axis direction with respect to the link head.

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

Abstract: A fiber laser oscillator (1; 100) has an optical fiber (10), a pumping light emitting device (30), a light guide member (40; 140), and a core member (50). The core member (50) is configured to have a flat plate-shaped, cylindrical, annular, or hollow spherical configuration. The optical fiber (10) is wound around the surface of the core member (50) or partially embedded within the surface of the core member (50). The light guide member (40; 140) has a light receiving surface (40a) and an opposite surface (40b) opposing the receiving surface. The opposite surface (40b) of the light guide member (40; 140) contacts the circumferential surface of the core member (50). Light (Lin) emitted from the light emitting device (30) travels (i.e., pumping light (Lin)) travels within the core member (50) along the circumference of the core member (50) and excites the core portion (12) of the optical fiber (10).

Abstract: Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more.

Abstract: A parallel mechanism adapted to control at least one of pivotal movement and linear movement of a link head having three degrees of freedom. The parallel mechanism has four actuators for driving the link head, and link groups which have four links connected to the four actuators, respectively, and each of which is connected to the link head. A rotation joint interposed between each of the link groups and the link head is made a linear joint which is connected to the link head so as to be relatively movable in one axis direction with respect to the link head.

Abstract: A combined processing machine has a workpiece processing unit that is operable to move within a X-Z plane defined by an X-axis preset in a predetermined direction and a Z-axis perpendicular to the X-axis, a heat treatment tool to apply a heat treatment to a workpiece, and a tool mounting unit that is adapted to attach at least one of a shaping tool to shape the workpiece and a finishing tool to finish the workpiece to the workpiece processing unit. The heat treatment tool has a light focusing head to focus a light supplied through a light guiding portion from a laser oscillator on the workpiece.

Abstract: In a three degrees of freedom parallel mechanism, a spindle head is carried by first and second movable support members to be movable along a Z-axis and to be pivotable along each of A and B-axes. The spindle head is jointed through three rods to drive sliders which are movable along three parallel linear guides secured stationarily. For jointing, there are employed spherical joints and universal joints. Kinematic parameters used in converting each command position of the movable body to target operational positions for three actuators of the Z, A and B-axes are compensated based on inversely converted command positions and inversely converted actually measured positions which have been gathered with the spindle head being located at positions of a suitable number, so that the kinematic parameters can be updated to those newest.

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

Abstract: A fiber laser oscillator 1 is provided with a pumping light source 30 for emitting pumping beams Lin; beam condensing means (light duct) 50 for condensing the pumping beams Lin emitted from the pumping light source 30; and a laser oscillation optical fiber 10 for receiving the pumping beams Lin condensed by the beam condensing means 50 to generate an output laser beam Lout. The beam condensing means 50 has an incident surface Min for making the pumping beams Lin from the pumping light source 30 incident thereon and an emission surface Mout for emitting the pumping beams Lin therefrom. The emission surface Mout is made smaller in area than the incident surface Min. Further, the area of the emission surface Mout is made to be the same as or smaller than that of one end surface of the laser oscillation optical fiber 10.

Abstract: Disclosed is a natural-superlattice homologous single-crystal thin film, which includes a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the formula: M1M2O3 (ZnO)m, wherein M1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.

Abstract: A fiber laser oscillator (1; 100) has an optical fiber (10), a pumping light emitting device (30), a light guide member (40; 140), and a core member (50). The core member (50) is configured to have a flat plate-shaped, cylindrical, annular, or hollow spherical configuration. The optical fiber (10) is wound around the surface of the core member (50) or partially embedded within the surface of the core member (50). The light guide member (40; 140) has a light receiving surface (40a) and an opposite surface (40b) opposing the receiving surface. The opposite surface (40b) of the light guide member (40; 140) contacts the circumferential surface of the core member (50). Light (Lin) emitted from the light emitting device (30) travels (i.e., pumping light (Lin)) travels within the core member (50) along the circumference of the core member (50) and excites the core portion (12) of the optical fiber (10).

Abstract: Optical waveguides, lens arrays and laser collecting devices are disclosed. The optical waveguide is formed with an output surface which is made smaller in dimension in a fast axis direction than an input surface. The waveguide collects in the fast axis direction plural laser beams output from plural laser emitting parts arranged in the fast axis direction and outputs from the output surface. The entrance surface of the optical waveguide is provided with first lenses to correspond respectively to the plural laser emitting parts. Each of the first lenses is located to be offset first predetermined distances from a corresponding one of the laser emitting parts in the beam traveling direction and in said fast axis direction, and the first predetermined distances are determined for each of the first lens in taking into account the focal length of each first lens and an angle which each first lens makes with the output surface of the waveguide.

Abstract: A cylindrical grinder includes a workpiece support section adapted to support a generally cylindrical workpiece and rotate the workpiece about a rotational axis, and a wheel head adapted to support and rotate a grinding wheel. The wheel head is moved relative to the workpiece support section, along a first direction parallel to a rotational axis of the workpiece and along a second direction perpendicular to the first direction in order to grind an outer surface of the workpiece. The wheel head is turnable relative to the workpiece so that a rotational axis of the grinding wheel can be tilted within a plane substantially passing through the rotational axis of the grinding wheel and the rotational axis of the workpiece, within a range extending across a reference plane perpendicular to the rotational axis of the workpiece. Further, link-type parallel link mechanisms for moving the grinding wheel are disclosed.

Abstract: Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more.

Abstract: The present invention provides an ultraviolet-transparent conductive film comprising a Ga2O3 crystal. The film has a transparency in the wavelength range of 240 to 800 nm, or 240 to 400 nm, and an electric conductivity induced by an oxygen deficiency or dopant in the Ga2O3 crystal. The dopant includes at least one element selected from the group consisting of the Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W. The ultraviolet-transparent conductive film is formed through either one of a pulsed-laser deposition method, sputtering method, CVD method and MBE method, under the conditions with a substrate temperature of 600 to 1500° C. and an oxygen partial pressure of 0 to 1 Pa.

Abstract: A cylindrical grinder includes a workpiece support section adapted to support a generally cylindrical workpiece and rotate the workpiece about a rotational axis, and a wheel head adapted to support and rotate a grinding wheel. The wheel head is moved relative to the workpiece support section, along a first direction parallel to a rotational axis of the workpiece and along a second direction perpendicular to the first direction in order to grind an outer surface of the workpiece. The wheel head is turnable relative to the workpiece so that a rotational axis of the grinding wheel can be tilted within a plane substantially passing through the rotational axis of the grinding wheel and the rotational axis of the workpiece, within a range extending across a reference plane perpendicular to the rotational axis of the workpiece. Further, link-type parallel link mechanisms for moving the grinding wheel are disclosed.

Abstract: Disclosed is a natural-superlattice homologous single-crystal thin film, which comprises a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the a formula: M1M2O3 (ZnO)m, wherein M1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.

Abstract: A beam collecting device and a laser emission device are disclosed incorporating a laminated optical waveguide array and refraction means therein. The laminated optical waveguide array is composed of a plurality of plate-like optical waveguides made of a material having a predetermined refractive index and a plurality of spacer members having a lower refractive index than that of said optical waveguides and arranged alternately with said optical waveguides. The spacer members take the form of cylindrical members, spherical members or plate-like members. The beam collecting device and laser emission device comprise a semiconductor laser array having a plurality of laser emitting parts arranged in fast and slow axis directions, the optical waveguide array, optical fibers and a collective lens. The laser emitting parts are divided into plural groups separated in the slow axis direction.

Abstract: An ultraviolet-light-emitting semiconductor diode comprising an n-type ZnO layer with luminous characteristics formed on a transparent substrate, and a p-type semiconductor layer selected from the group consisting of SrCu2O2, CuAlO2 and CuGaO2, which is formed on the n-type ZnO layer to provide a p-n junction therebetween. The transparent substrate is preferably a single crystal substrate having atomically flat yttria-stabilized zirconia (YSZ) (III) surface. The n-type ZnO layer is formed on the transparent substrate having a temperature of 200 to 1200° C., and the p-type semiconductor layer selected from the group of SrCu2O2, CuAlO2 and CuGaO2 is formed on the n-type ZnO layer. The n-type ZnO layer may be formed without heating the substrate, and then the surface of the ZnO layer may be irradiated with ultraviolet light to promote crystallization therein.