Abstract: A method for inspecting a photomask, comprising generating a laser beam, changing a phase of the laser beam to smooth the brightness distribution of the laser beam, applying the smoothed laser beam to the photomask, acquiring an image of the photomask using a sensor while the laser beam and the photomask are relatively moved, examining the image of the photomask for a defect of the mask-pattern of the photomask.

Abstract: The difference data between the real patter data Sij, and a 5×5 window with a noticed pixel in the center and the design pattern data Rij obtained by the design pattern data of the window being shifted in a plurality of directions with respect to the design pattern data Rij is found by a shift direction operation section, and the design pattern data in the direction in which the total of the pixels is minimum is selected from the difference data by a selection section, the difference between the central pixels Sij, Qij of the selected design pattern data and the central pixels Sij, Qij of the windows of the real pattern data is found by a difference operation section, and the difference and a threshold are compared in a defect judgement section, and thereby the pattern inspection of the object is carried out.

Abstract: A method for inspecting a photomask, comprising generating a laser beam, changing a phase of the laser beam to smooth the brightness distribution of the laser beam, applying the smoothed laser beam to the photomask, acquiring an image of the photomask using a sensor while the laser beam and the photomask are relatively moved, examining the image of the photomask for a defect of the mask-pattern of the photomask.

Abstract: A photolithography mask inspection apparatus has at least two sensors. One sensor is configured to sense light transmitted through an object to be inspected, and the other sensor senses light reflected off the object. A first optical system is arranged to expose a first portion of the object with a first light beam, and a second optical system is arranged to expose a second portion of the object, spaced form the first portion, with a second light beam. A third optical system focuses the transmitted light on to the first sensor, as well as the reflected light on to the second sensor. A defect detecting circuit is also provided to detect a defect of the object, based upon image data associated with the reflected and transmitted light.

Abstract: A pattern inspection device comprises a section for obtaining a sensor data by imaging a pattern formed on an object to be inspected, a reference data creation section to create a reference data obtained from a design data of the pattern, a pattern recognition section for cutting out a predetermined area from the reference data and recognizing the pattern, and a level conversion section for converting a level of one of the reference data and the sensor data according to a recognition result in the pattern recognition section.

Abstract: A pattern inspection device comprises a section for obtaining a sensor data by imaging a pattern formed on an object to be inspected, a reference data creation section to create a reference data obtained from a design data of the pattern, a pattern recognition section for cutting out a predetermined area from the reference data and recognizing the pattern, and a level conversion section for converting a level of one of the reference data and the sensor data according to a recognition result in the pattern recognition section.

Abstract: A pair of edges that are located at ends as viewed in the widthwise direction of a design pattern are recognized. On the basis of the edge direction in which the paired edges are recognized, edge points on the design pattern are detected as sub-pixels. The widthwise dimension of the design pattern is calculated on the basis of the edge points. In addition, the widthwise dimension of a circuit pattern is calculated at the same position as the widthwise dimension of the design pattern. On the basis of the calculated widthwise dimensions, the semiconductor wafer circuit pattern is checked.

Abstract: A method for inspecting a photomask, comprising generating a laser beam, changing a phase of the laser beam to smooth the brightness distribution of the laser beam, applying the smoothed laser beam to the photomask, acquiring an image of the photomask using a sensor while the laser beam and the photomask are relatively moved, examining the image of the photomask for a defect of the mask-pattern of the photomask.

Abstract: The pattern edge direction in reference image data of an object to be examined is detected, the reference image data is differentiated using a differential operator in a direction along the pattern edge direction, and inspection image data obtained by picking up an image of the object to be inspected is differentiated using the differential operator in the direction along the pattern edge direction. The differential data obtained by the differential processing are compared with the inspection image data, and a pattern defect on the object to be inspected is detected based on the difference between these data.

Abstract: A conductive paste composition is described, which comprises an epoxy resin having a diglycidylamino group, a resol type phenol curing agent, and copper powder. The paste composition exhibits excellent moisture resistance and adhesion and provides a cured film of high conductivity level.

Abstract: A copper-type conductive coating composition which comprises:(A) a copper powder,(B) a coating binder resin, and(C) at least one number selected from the group consisting of salicylic acid, its specific derivatives, and benzotriazolecarboxylic acid hydrazides.The copper-type conductive coating composition provides a conductive coating layer having excellent initial conductivity and capable of maintaining the level of it stable over a long period of the time.

Abstract: An electron gun arrangement for color cathode-ray tubes comprising three cathodes for emitting electron beams, for example, for red, green and blue, and a main electron lens comprising three front electron lenses corresponding to the cathodes, respectively, and a back electron lens common to all the cathodes. Each front electron lens is formed with an aperture smaller than that of the back electron lens and is mounted so as to meet Fraunhofer conditions so that aberration is reduced. Electron beam transmitting apertures are formed in the grids forming the front electron lenses, respectively, with the respective center axes thereof parallel to each other, which makes it easy to manufacture the electron gun arrangement and enables accurate machining during manufacturing.

Abstract: A method of irradiating a metal piece (5) with a laser beam for generating a metal vapor (11) required for a metal vapor laser to oscillate. The method makes it possible to reduce the time required to activate the laser as well as the response time required to adjust the metal vapor density. Metals having a high melting point can also be vaporized for laser oscillation in accordance with the method.