Abstract: Disclosed herein is a lighting period setting method for a display panel which permits control of the peak luminance level by controlling the total lighting period length which is the sum of all lighting periods per field period, the lighting period setting method including the steps of, calculating the average luminance level across the screen based on input image data, determining light emission mode based on the calculated average luminance level, and setting the number, arrangement and lengths of lighting periods per field period according to the setting conditions defined for the determined light emission mode so as to provide the peak luminance level which is set according to the input image data.

Abstract: Disclosed herein is a light emitting period setting method for a display panel wherein the peak luminance level is varied through control of a total light emitting period length which is the sum total of period lengths of light emitting periods arranged in a one-field period, including a step of setting period lengths of N light emitting periods, which are arranged in a one-field period, in response to the total light emitting period length such that the period lengths of the light emitting periods continue to keep a fixed ratio thereamong, N being equal to or higher than 3.

Abstract: In a method for controlling a parallelism between a probe card having a number of probe pins and a mounting table, first, among the probe pins, one or more probe pins corresponding to each of plural distinct locations on an X-Y coordinate system whose origin lies at a probe center are selected. Then, a tip of each of the selected probe pins is detected to obtain position coordinates (X,Y,Z) thereof. Thereafter, a specific point on each of connection lines connecting tips of neighboring selected probe pins is selected and their position coordinates on the connection lines are calculated, wherein the position coordinates of the specific points are set as position coordinates (X,Y,Z) of tips of imaginary probe pins. Subsequently, the parallelism between the probe card and the mounting table based on the position coordinates (X,Y,Z) of the tips of the imaginary probe pins is adjusted.

Abstract: The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.

Abstract: An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

Abstract: In a method for controlling a parallelism between a probe card having a number of probe pins and a mounting table, first, among the probe pins, one or more probe pins corresponding to each of plural distinct locations on an X-Y coordinate system whose origin lies at a probe center are selected. Then, a tip of each of the selected probe pins is detected to obtain position coordinates (X,Y,Z) thereof. Thereafter, a specific point on each of connection lines connecting tips of neighboring selected probe pins is selected and their position coordinates on the connection lines are calculated, wherein the position coordinates of the specific points are set as position coordinates (X,Y,Z) of tips of imaginary probe pins. Subsequently, the parallelism between the probe card and the mounting table based on the position coordinates (X,Y,Z) of the tips of the imaginary probe pins is adjusted.

Abstract: An RTP packet generating unit 11 packetizes data into packets, and adds identification information to the header of each of the packets, the identification information identifying each of the packets. An RTP packet encrypting unit 13 divides data included in each of the generated packets into blocks, and encrypts the data included in each of the packets on a block-by-block basis using an encryption key which an encryption key sharing unit 12 shares with a receiving client in such a manner that, when encrypting a first block of the data, the packet encrypting unit encrypts it using the identification information for identifying each of the packets, which is contained, as an initial vector, in the header of each of the packets, and, when encrypting each subsequent block of the data, encrypts it according to an encryption method which uses an immediately-previously-encrypted block.

Abstract: A probe device includes a supporting member for supporting the probe card having a plurality of channels. Each of the channels has a group of probes which are brought into contact with plural electrode pads of one of objects to be inspected. The probe device further includes a channel information creation unit for creating channel information containing a layout of a group of the plurality of channels and an identification number of each of the channels and transmitting the created channel information to a controller, a channel information memory unit for storing the channel information received from the channel information creation unit, and an object layout memory unit for storing layout information of the objects. The controller performs an inspection of the objects based on the channel information stored in the channel information memory unit and the layout information of the objects stored in the object layout memory unit.

Abstract: An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

Abstract: A probe device includes a supporting member for supporting the probe card having a plurality of channels. Each of the channels has a group of probes which are brought into contact with plural electrode pads of one of objects to be inspected. The probe device further includes a channel information creation unit for creating channel information containing a layout of a group of the plurality of channels and an identification number of each of the channels and transmitting the created channel information to a controller, a channel information memory unit for storing the channel information received from the channel information creation unit, and an object layout memory unit for storing layout information of the objects. The controller performs an inspection of the objects based on the channel information stored in the channel information memory unit and the layout information of the objects stored in the object layout memory unit.

Abstract: An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

Abstract: The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.

Abstract: The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irraditation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.

Abstract: In a flat type plasma discharge display device which includes a discharge sustaining electrode group (X) having first and second discharge sustaining electrodes and an address electrode group (Y) having address electrodes, a plurality of plasma discharge parts (P) are formed for one discharge start part thereof, and the plasma discharge parts relating to one discharge start part are driven sequentially or simultaneously to emit a light, whereby it becomes possible that plasma display of high definition and high luminance is performed in the flat type plasma discharge display device.

Abstract: An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

Abstract: An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

Abstract: Disclosed is a polysilicon film adapted for use in a liquid crystal display, and method of manufacturing such film. In manufacturing the film, a native oxide layer formed on a surface of an amorphous silicon film is completely removed by a hydrofluoric acid solution, followed by immersing in an H2O2 solution to newly form an extremely thin oxide layer, prior to a crystallizing processing performed by a laser beam irradiation. The crystallizing processing forms a polysilicon film formed of crystal grains Preferentially oriented on the (111) plane in a direction parallel to the substrate surface, an average crystal grain size being not larger than 300 nm, the standard deviation of the grain sizes being not larger than 30% of the average grain size, and the standard deviation of the roughness being not larger than 10% of the average grain size.

Abstract: An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

Abstract: An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

Abstract: The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.